DD312
Abstract: Constant Current LED Driver
Text: DD312 Version : PRE.001 Issue Date : 2005/8/15 File Name : SP-DD312-PRE.001.doc Total Pages : 14 HIGH CONSTANT CURRENT LED DRIVER with ERROR DETECTION 點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. 新竹市科學園區展業一路 9 號 7 樓之 1
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DD312
SP-DD312-PRE
Tel886-3-5645656
Fax886-3-5645626
DD312
Constant Current LED Driver
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Untitled
Abstract: No abstract text available
Text: DD312 Version : A.002 Issue Date : 2010/10/05 File Name : SP-DD312-A.002.doc Total Pages : 22 HIGH CONSTANT CURRENT LED DRIVER with ERROR DETECTION 新竹市科學園區展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-7F-1, Prosperity Road I, Science Based Industrial Park,
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DD312
SP-DD312-A
DD312
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dd312
Abstract: SOP-8-150-1
Text: DD312 Version : A.001 Issue Date : 2007/07/18 File Name : SP-DD312-A.001.doc Total Pages : 20 HIGH CONSTANT CURRENT LED DRIVER with ERROR DETECTION 新竹市科學園區展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-7F-1, Prosperity Road I, Science Based Industrial Park,
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DD312
SP-DD312-A
Tel886-3-5645656
Fax886-3-5645626
DD312
SOP-8-150-1
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dd104 murata
Abstract: 473z 104z 25v 2KV 223Z DD104 989 104Z 500V f 104 z DD104 224Z F472Z
Text: このカタログはNo.C83-3をムラタのwebサイトよりPDF形式でダウンロードしたものです。 No.C83J3.pdf 00.3.15 セラミックコンデンサ12V/16V/25V/50V/500V DD100・DD10・DD300・DD400 シリーズ CERAMIC CAPACITORS Cat.No.C83-3
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C83-3webPDF
C83J3
2V/16V/25V/50V/500V
DD100
DD300
DD400
C83-3
DD100
dd104 murata
473z
104z 25v
2KV 223Z
DD104 989
104Z 500V
f 104 z
DD104
224Z
F472Z
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bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?
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f103z 1kv
Abstract: capacitor 223z F223Z 1kv capacitor 223z 1kv ceramic capacitor f103z 2kv capacitor type 104z 50v 104z 25v dd104 murata 223Z DD104 989
Text: This is the PDF file of catalog No.C83E-3. No.C83E3.pdf 00.4.11 CERAMIC CAPACITORS 12V/16V/25V/50V/500V DD100 •DD10 •DD300 •DD400 Series CERAMIC CAPACITORS Murata Manufacturing Co., Ltd. Cat.No.C83E-3 This is the PDF file of catalog No.C83E-3. No.C83E3.pdf 00.4.11
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C83E-3.
C83E3
2V/16V/25V/50V/500V
DD100
DD300
DD400
C83E-3
f103z 1kv
capacitor 223z
F223Z 1kv capacitor
223z 1kv ceramic capacitor
f103z 2kv
capacitor type 104z 50v
104z 25v
dd104 murata
223Z
DD104 989
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Untitled
Abstract: No abstract text available
Text: 3QE » • 7^2=1237 DD3121S 7 ■ HOMSON £ÿj SGS-THOMSON LtEgïïlïMOOS S 6 _ _ _ -37“ 15 2N4036 S- TH OM SO N MEDIUM-SPEED SWITCH DESCRIPTION The 2N4036 is a silicon planar epitaxial PNP tran sistor in Jedec TO-39 metal case. It is intended par
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DD3121S
2N4036
2N4036
10KHz
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TLCS-90
Abstract: No abstract text available
Text: TO SH IBA TMP90C846 CMOS 8-BIT MICROCONTROLLER TMP90C846F 1. OUTLINE AND CHARACTERISTICS The TMP90C846 is an advanced 8-bit microcontroller developed for application in the control of HDD/FDD high-speed mechanisms. The built-in functions include a high speed A/D converter minimum sampling rate: 400ns @ 10MHz with an external start
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TMP90C846
TMP90C846F
TMP90C846
400ns
10MHz)
44-pin
QFP44-P-1414D)
TMP90C846.
TLCS-90
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Untitled
Abstract: No abstract text available
Text: D • A235bOS DDBlEEfl 1 M S I E G XX, , SIEMENS AKTIEN GE SEL LSCHAF T-52.-33-5S SAB 82289 Bus Arbiter for SAB 80286 Processors SAB 82289-6 up to 12 MHz SAB 82289 up to 16 MHz • S upports m u ltim aster system bus arbitration protocol • Synchronizes SAB 80286 processor w ith
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A235bOS
-33-5S
S07HOLD
fl235b05
00312b!
T-52-33-55
82289-P
Q67020-Y77
82289-6-P
Q67120-Y111
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KM6 II
Abstract: SRAM sheet samsung KM616
Text: KM 6 1 6 4 0 0 0 A ei cm ELECTRONICS CMOS SRAM 256Kx16 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM6164000A family is fabricated by SAMSUNG’S advanced CMOS process technology. The family can support various operating
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256Kx16
256Kx16
44-TSOP
KM6164000A
KM6164000A
KM6 II
SRAM sheet samsung
KM616
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473Z
Abstract: capacitor type 104z 50v capacitor 223z Y5V 104Z 473m 50v 223Z ERIE CAPACITORS U/25/20/TN26/15/850/R/k5u 104z capacitor
Text: CERAMIC DISC CAPACITORS 12-50 VDC PART NU M B ERING SYSTEM TYPE D D350 T TEM P. C HA R . Y5P LEADS 950 " ~I I CAPACITOR TYPE AND SIZE !— LEAD CONFIG. TEMPERATURE CHARACTERISTICS See lead style chart Temperature Range Y5=-30°C to +85°C MAX. CAP. CHANGE
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DD305950
Y5V104Z12V
DD308950
DD310950
DD312454
474Z12V
16VDC
50VDC
DD304950
473Z
capacitor type 104z 50v
capacitor 223z
Y5V 104Z
473m 50v
223Z
ERIE CAPACITORS
U/25/20/TN26/15/850/R/k5u 104z capacitor
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sab82288
Abstract: SAB82289 SAB 80286 16 N 82288
Text: SIEM ENS 47E D • A23SbDS 0 0 3 i n b 3 ■ SIEG SIEMENS AKTI ENGESELLSCHAF " P c Q '3 5 r ö 5 Bus Controller for SAB 80286 Processors SAB 82288 Preliminary SAB 82288-6 up to 12 MHz SAB 82288 up to 16 MHz • Provides com m ands and control fo r local and system bus
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A23SbDS
P-DIP-20
20-pin
SAB82288
T-52-33-55
sab82288
SAB82289
SAB 80286 16 N
82288
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Ali 3601
Abstract: QML-38534 5962-9461403H K 622 3D3
Text: REVISIONS LTR DESCRIPTION DATE y r - m o -d a APPROVED C A dded case outline Z. C orrected the true dim ensioning table 98-08-13 K.A. C ottongim _ feature fo r case outlines U. X. and Y. -sld_ _
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BFG96
Abstract: No abstract text available
Text: P hilips Sem iconductor; bbS3T31 0031ST2 553 M A P X Product specification BFG96 NPN 5 GHz wideband transistor bit N AUER PHILIPS/5ISCRETE DESCRIPTION » PINNING NPN transistor in a 4-lead dual-emitter plastic SOU 03 envelope. DESCRIPTION PIN It is designed for application in
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bbS3T31
0031ST2
BFG96
BFG32.
OT103.
BFG96
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Untitled
Abstract: No abstract text available
Text: KM68V1002A/AL CMOS S RAM ELECTRONICS 1 2 8 K x 8 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly
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KM68V1002A/AL
KM68V1002A/AL-12
KM68V1002A/AL-15
KM68V1002A/AL-17
KM68V1002A/AL-20
KM68V1002AJ/ALJ
32-SOJ-4Ã
KM68V1002AT/ALT004
32-TSO
P2-400F
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Untitled
Abstract: No abstract text available
Text: KM718V787 CMOS SRAM ELECTRONICS 128K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION. • Synchronous Operation. • On-Chip Address Counter. • Write Self-Timed Cycle. • On- Chip Address and Control Registers. • Single 3.3V±5% Power Supply.
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KM718V787
18-Bit
100-Pin
GG313GS
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BFG90A
Abstract: No abstract text available
Text: Philips Semiconductors bbS 3^31 0031222 13 T Product specification « A P X £ NPN 5 GHz wideband transistor BFG90A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT103 envelope. PIN It is designed for application in
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BFG90A
OT103
OT103.
BFG90A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TMP47C655/855 CMOS 4-BIT MICROCONTROLLER TMP47C655F, TMP47C855F The 47C655/855 are a h ig h speed a n d h ig h p e rfo rm a n c e 4 - b it sin g le c h ip m ic ro c o m p u te r based on th e TLCS470 CMOS series. The 47C655/855 have LCD d riv e r, DTMF g e n e ra to r a n d la rg e -ca p a city RAM fo r re p e rto ry
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TMP47C655/855
TMP47C655F,
TMP47C855F
47C655/855
TLCS470
TMP47C655F
960kH
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Untitled
Abstract: No abstract text available
Text: For Immediate Assistance, Contact Your Local Salesperson BURR - BROW N S E REF1004 1 « I # 1.2V and 2.5V Micropower VOLTAGE REFERENCE FEATURES DESCRIPTION • INITIAL ACCURACY: REF1004-1.2 ±4mV REF1004-2.5 ±20mV • MINIMUM OPERATING CURRENT: REF1004-1.2 10jxA
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REF1004
REF1004-1
REF1004-2
10jxA
REF1004
G0312bS
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Untitled
Abstract: No abstract text available
Text: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R - BROW N REG1117 & nan 800mA Low Dropout Positive Regulator 2.85V, 3V, 3.3V, 5V, and Adjustable FEATURES APPLICATIONS • 2.85V, 3V, 3.3V, 5V, and ADJUSTABLE VERSIONS • 2.85V MODEL FOR SCSI-2 ACTIVE
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REG1117
800mA
800mA
OT-223
100MF
17313LS
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Y5P102K
Abstract: MA2830 LQH3C1R0M04M00 MA2810-1 6003R3 RVG4F03A PLH11L-6003R3 PLA3021A TZB04 TZ03Z500FR169
Text: DESIGN ENGINEERING KITS CAPACITORS— CHIP MONOLITHIC * • ■ ■ ■ ■ Miniature size Wide capacitance, TC, voltage and tolerance range Industry standard sizes 8mm and 12mm tape and reel for auto-placements Barrier layer termination systems for wave, reflow or vapor
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GRM39COG010B100AB
GRM39COG1R5B1OOAB
GRM39COG2R2B1
GRM39COG3R3B1
GRM39COG4R7B1
GRM39COG6R8C1
GRM39COG100D1
GRM39COG150J10OAB
GRM39COG220J100
GRM39COG330J100AB
Y5P102K
MA2830
LQH3C1R0M04M00
MA2810-1
6003R3
RVG4F03A
PLH11L-6003R3
PLA3021A
TZB04
TZ03Z500FR169
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Untitled
Abstract: No abstract text available
Text: HM51W16160 Series HM51W18160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-635B Z Rev. 2.0 Dec. 5 ,1 9 9 6 Description The Hitachi HM51W16160 Series, HM51W18160 Series are CMOS dynamic RAMs organized as 1,048,576word x 16-bit. They employ the most advanced CMOS technology for high performance and low power.
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HM51W16160
HM51W18160
1048576-word
16-bit
ADE-203-635B
576word
16-bit.
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qml-38535
Abstract: 54ALS373 GDFP3-F20
Text: REVISIONS LTR DESCRIPTION DATE APPROVED Y R -M O -D A C Editorial changes throughout. Convert to military drawing format. Added vendor CAGE numbers 27014 and 18324. Table 1, propagation delay changes. 88-05-03 Michael A. Frye D Changes in accordance with NOR 5962-R080-92. Changes to
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5962-R080-92.
5962-R136-96.
TG0470Ã
qml-38535
54ALS373
GDFP3-F20
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SRAM sheet samsung
Abstract: 44TSOP KM6 II KM68U4000A 414KM 44-TSOP
Text: K M6 1 6 V 4 0 0 0 A CMOS SRAM ELECTRONICS 256Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM616V4000A and KM616U4000A family are • Organization: 256Kx16 fabricated by SAMSUNG'S advanced CMOS process
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256Kx16
256Kx16
KM68V4000A
KM68U4000A
44-TSOP
KM616V4000A
KM616U4000A
KM616V4000A
0D312Sb
SRAM sheet samsung
44TSOP
KM6 II
414KM
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