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    U214

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRFR214/U214 FEATURES D -P A K • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		IRFR214/U214 IRFR214 IRFU214 7Tb4142 DDEflti40 G020b41 U214 PDF