definition RMS forward current
Abstract: CLA50E
Text: CLA 50 E 1200 TC advanced V RRM = 1200 V 80 A I T RMS = I T(AV)M = 50 A Thyristor Part number 2 CLA 50 E 1200 TC 1 3 Backside: anode Features / Advantages: Applications: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability of blocking currents and voltages
|
Original
|
20080213a
definition RMS forward current
CLA50E
|
PDF
|
definition RMS forward current
Abstract: CLA diode
Text: CLA 50 E 1200 TC advanced V RRM = 1200 V 80 A I T RMS = I T(AV)M = 50 A Thyristor Part number 2 CLA 50 E 1200 TC 1 3 Backside: anode Features / Advantages: Applications: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability of blocking currents and voltages
|
Original
|
O-268
definition RMS forward current
CLA diode
|
PDF
|
definition RMS forward current
Abstract: No abstract text available
Text: CMA 30 E 1600 PB V RRM = 1600 V 50 A I T RMS = I T(AV)M = 30 A Thyristor Part number 2 CMA 30 E 1600 PB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability of blocking currents and voltages
|
Original
|
O-220AB
definition RMS forward current
|
PDF
|
CLA50E
Abstract: definition RMS forward current
Text: CLA 50 E 1200 HB V RRM = 1200 V 80 A I T RMS = I T(AV)M = 50 A Thyristor Part number 2 CLA 50 E 1200 HB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability of blocking currents and voltages
|
Original
|
O-247AD
CLA50E
definition RMS forward current
|
PDF
|
CMA50P1600FC
Abstract: No abstract text available
Text: CMA 30 P 1600 FC advanced V RRM = I T RMS = I T(AV)M = Standard SCR Phase leg Part number 2 1 4 5 1600 V 47 A 30 A 3 Backside: Isolated Applications: Features / Advantages: Thyristor for line frequency Planar passivated chip Long-term stability of blocking currents and voltages
|
Original
|
UniCMA50P1600FC
CMA30P1600FC
60747and
CMA50P1600FC
|
PDF
|
CMA30E
Abstract: CLA30E1200HB
Text: CMA 30 E 1600 PB advanced V RRM = I T RMS = I T(AV)M = Standard SCR Single Thyristor 1600 V 47 A 30 A Part number 2 1 3 Backside: anode Applications: Features / Advantages: Thyristor for line frequency Planar passivated chip Long-term stability of blocking currents and voltages
|
Original
|
O-220
60747and
CMA30E
CLA30E1200HB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMA 30 E 1600 PN advanced V RRM = I T RMS = I T(AV)M = Standard SCR Single Thyristor 1600 V 47 A 30 A Part number 2 1 3 Backside: Isolated Applications: Features / Advantages: Thyristor for line frequency Planar passivated chip Long-term stability of blocking currents and voltages
|
Original
|
O-220FP
CMA30E1600PN
O-220AB
O-220ABFP
ISOPLUS220AB
O-263AB
O-247AD
|
PDF
|
gct thyristor
Abstract: FD500JV-90DA 2000A power diode qrr 530G thyristor cdi 2000A power diode
Text: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD500JV-90DA Dimensions in mm 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN 26 ± 0.5 TYPE NAME φ47 φ75MAX ¡IF AV Average forward current . 500A
|
Original
|
FD500JV-90DA
75MAX
gct thyristor
FD500JV-90DA
2000A power diode qrr
530G
thyristor cdi
2000A power diode
|
PDF
|
gct thyristor
Abstract: FD500JV-90DA thyristor cdi 2000A power diode 2000A power diode qrr
Text: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD500JV-90DA Dimensions in mm 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN 26 ± 0.5 TYPE NAME φ47 φ75MAX ¡IF AV Average forward current . 500A
|
Original
|
FD500JV-90DA
75MAX
gct thyristor
FD500JV-90DA
thyristor cdi
2000A power diode
2000A power diode qrr
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MDMA380P1600KC tentative Standard Rectifier Module VRRM = 2x 1600 V I FAV = 380 A VF = 0.98 V Phase leg Part number MDMA380P1600KC Backside: isolated 2 1 3 Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current
|
Original
|
MDMA380P1600KC
60747and
|
PDF
|
DNA30E2200FE
Abstract: DNA30E2200PZ DNA30EM2200PZ
Text: DNA30E2200FE High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.22 V Single Diode Part number DNA30E2200FE Backside: isolated 5 1 Features / Advantages: Applications: Package: i4-Pac ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
|
Original
|
DNA30E2200FE
conditio50
60747and
20130123c
DNA30E2200FE
DNA30E2200PZ
DNA30EM2200PZ
|
PDF
|
MDMA200P1600SA
Abstract: No abstract text available
Text: MDMA200P1600SA tentative Standard Rectifier Module VRRM = 2x 1600 V I FAV = 200 A VF = 1.06 V Phase leg Part number MDMA200P1600SA Backside: isolated 2 3/4 1 Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current
|
Original
|
MDMA200P1600SA
60747and
MDMA200P1600SA
|
PDF
|
DNA30E2200FE
Abstract: DNA30E2200PC DNA30EM2200PC
Text: DNA30E2200FE High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.22 V Single Diode Part number DNA30E2200FE Backside: isolated 5 1 Features / Advantages: Applications: Package: i4-Pac ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
|
Original
|
DNA30E2200FE
60747and
20130123c
DNA30E2200FE
DNA30E2200PC
DNA30EM2200PC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MDO500-16N1 Standard Rectifier Module VRRM = 1600 V I FAV = 560 A VF = 0.98 V Single Diode Part number MDO500-16N1 Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
|
Original
|
MDO500-16N1
60747and
20140204a
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: MDO500-20N1 High Voltage Standard Rectifier Module VRRM = 2000 V I FAV = 560 A VF = 0.98 V Single Diode Part number MDO500-20N1 Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current
|
Original
|
MDO500-20N1
60747and
20140204a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MDO500-14N1 Standard Rectifier Module VRRM = 1400 V I FAV = 560 A VF = 0.98 V Single Diode Part number MDO500-14N1 Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
|
Original
|
MDO500-14N1
60747and
20140204a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MDO500-18N1 Standard Rectifier Module VRRM = 1800 V I FAV = 560 A VF = 0.98 V Single Diode Part number MDO500-18N1 Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
|
Original
|
MDO500-18N1
60747and
20140204a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MDO500-22N1 High Voltage Standard Rectifier Module VRRM = 2200 V I FAV = 560 A VF = 0.98 V Single Diode Part number MDO500-22N1 Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current
|
Original
|
MDO500-22N1
60747and
20140204a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VUO25-12NO8 3~ Rectifier Standard Rectifier Module VRRM = 1200 V I DAV = 20 A I FSM = 380 A 3~ Rectifier Bridge Part number VUO25-12NO8 - ~ ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
|
Original
|
VUO25-12NO8
60747and
20130529b
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VBO36-16NO8 3~ 1~ Rectifier Standard Rectifier Module VRRM = 1600 V I DAV = 18 A I FSM = 550 A 1~ Rectifier Bridge Part number VBO36-16NO8 - ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
|
Original
|
VBO36-16NO8
60747and
20130603c
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VBO36-12NO8 3~ 1~ Rectifier Standard Rectifier Module VRRM = 1200 V I DAV = 18 A I FSM = 550 A 1~ Rectifier Bridge Part number VBO36-12NO8 - ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
|
Original
|
VBO36-12NO8
60747and
20130603c
|
PDF
|
VUO36-18NO8
Abstract: No abstract text available
Text: VUO36-18NO8 3~ Rectifier Standard Rectifier Module VRRM = 1800 V I DAV = 27 A I FSM = 550 A 3~ Rectifier Bridge Part number VUO36-18NO8 - ~ ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
|
Original
|
VUO36-18NO8
60747and
20130529c
VUO36-18NO8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VUO25-16NO8 3~ Rectifier Standard Rectifier Module VRRM = 1600 V I DAV = 20 A I FSM = 380 A 3~ Rectifier Bridge Part number VUO25-16NO8 - ~ ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
|
Original
|
VUO25-16NO8
60747and
20130529b
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IX25MB080 3~ 1~ Rectifier Standard Rectifier Module VRRM = 800 V I DAV = 14 A I FSM = 380 A 1~ Rectifier Bridge Part number IX25MB080 - ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
|
Original
|
IX25MB080
60747and
20131028a
|
PDF
|
