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    DEFINITION RMS FORWARD CURRENT Search Results

    DEFINITION RMS FORWARD CURRENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    DEFINITION RMS FORWARD CURRENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    definition RMS forward current

    Abstract: CLA50E
    Text: CLA 50 E 1200 TC advanced V RRM = 1200 V 80 A I T RMS = I T(AV)M = 50 A Thyristor Part number 2 CLA 50 E 1200 TC 1 3 Backside: anode Features / Advantages: Applications: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability of blocking currents and voltages


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    PDF 20080213a definition RMS forward current CLA50E

    definition RMS forward current

    Abstract: CLA diode
    Text: CLA 50 E 1200 TC advanced V RRM = 1200 V 80 A I T RMS = I T(AV)M = 50 A Thyristor Part number 2 CLA 50 E 1200 TC 1 3 Backside: anode Features / Advantages: Applications: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability of blocking currents and voltages


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    PDF O-268 definition RMS forward current CLA diode

    definition RMS forward current

    Abstract: No abstract text available
    Text: CMA 30 E 1600 PB V RRM = 1600 V 50 A I T RMS = I T(AV)M = 30 A Thyristor Part number 2 CMA 30 E 1600 PB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability of blocking currents and voltages


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    PDF O-220AB definition RMS forward current

    CLA50E

    Abstract: definition RMS forward current
    Text: CLA 50 E 1200 HB V RRM = 1200 V 80 A I T RMS = I T(AV)M = 50 A Thyristor Part number 2 CLA 50 E 1200 HB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability of blocking currents and voltages


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    PDF O-247AD CLA50E definition RMS forward current

    CMA50P1600FC

    Abstract: No abstract text available
    Text: CMA 30 P 1600 FC advanced V RRM = I T RMS = I T(AV)M = Standard SCR Phase leg Part number 2 1 4 5 1600 V 47 A 30 A 3 Backside: Isolated Applications: Features / Advantages: Thyristor for line frequency Planar passivated chip Long-term stability of blocking currents and voltages


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    PDF UniCMA50P1600FC CMA30P1600FC 60747and CMA50P1600FC

    CMA30E

    Abstract: CLA30E1200HB
    Text: CMA 30 E 1600 PB advanced V RRM = I T RMS = I T(AV)M = Standard SCR Single Thyristor 1600 V 47 A 30 A Part number 2 1 3 Backside: anode Applications: Features / Advantages: Thyristor for line frequency Planar passivated chip Long-term stability of blocking currents and voltages


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    PDF O-220 60747and CMA30E CLA30E1200HB

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    Abstract: No abstract text available
    Text: CMA 30 E 1600 PN advanced V RRM = I T RMS = I T(AV)M = Standard SCR Single Thyristor 1600 V 47 A 30 A Part number 2 1 3 Backside: Isolated Applications: Features / Advantages: Thyristor for line frequency Planar passivated chip Long-term stability of blocking currents and voltages


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    PDF O-220FP CMA30E1600PN O-220AB O-220ABFP ISOPLUS220AB O-263AB O-247AD

    gct thyristor

    Abstract: FD500JV-90DA 2000A power diode qrr 530G thyristor cdi 2000A power diode
    Text: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD500JV-90DA Dimensions in mm 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN 26 ± 0.5 TYPE NAME φ47 φ75MAX ¡IF AV Average forward current . 500A


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    PDF FD500JV-90DA 75MAX gct thyristor FD500JV-90DA 2000A power diode qrr 530G thyristor cdi 2000A power diode

    gct thyristor

    Abstract: FD500JV-90DA thyristor cdi 2000A power diode 2000A power diode qrr
    Text: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD500JV-90DA Dimensions in mm 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN 26 ± 0.5 TYPE NAME φ47 φ75MAX ¡IF AV Average forward current . 500A


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    PDF FD500JV-90DA 75MAX gct thyristor FD500JV-90DA thyristor cdi 2000A power diode 2000A power diode qrr

    Untitled

    Abstract: No abstract text available
    Text: MDMA380P1600KC tentative Standard Rectifier Module VRRM = 2x 1600 V I FAV = 380 A VF = 0.98 V Phase leg Part number MDMA380P1600KC Backside: isolated 2 1 3 Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current


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    PDF MDMA380P1600KC 60747and

    DNA30E2200FE

    Abstract: DNA30E2200PZ DNA30EM2200PZ
    Text: DNA30E2200FE High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.22 V Single Diode Part number DNA30E2200FE Backside: isolated 5 1 Features / Advantages: Applications: Package: i4-Pac ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop


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    PDF DNA30E2200FE conditio50 60747and 20130123c DNA30E2200FE DNA30E2200PZ DNA30EM2200PZ

    MDMA200P1600SA

    Abstract: No abstract text available
    Text: MDMA200P1600SA tentative Standard Rectifier Module VRRM = 2x 1600 V I FAV = 200 A VF = 1.06 V Phase leg Part number MDMA200P1600SA Backside: isolated 2 3/4 1 Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current


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    PDF MDMA200P1600SA 60747and MDMA200P1600SA

    DNA30E2200FE

    Abstract: DNA30E2200PC DNA30EM2200PC
    Text: DNA30E2200FE High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.22 V Single Diode Part number DNA30E2200FE Backside: isolated 5 1 Features / Advantages: Applications: Package: i4-Pac ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop


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    PDF DNA30E2200FE 60747and 20130123c DNA30E2200FE DNA30E2200PC DNA30EM2200PC

    Untitled

    Abstract: No abstract text available
    Text: MDO500-16N1 Standard Rectifier Module VRRM = 1600 V I FAV = 560 A VF = 0.98 V Single Diode Part number MDO500-16N1 Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop


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    PDF MDO500-16N1 60747and 20140204a

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    Abstract: No abstract text available
    Text: MDO500-20N1 High Voltage Standard Rectifier Module VRRM = 2000 V I FAV = 560 A VF = 0.98 V Single Diode Part number MDO500-20N1 Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current


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    PDF MDO500-20N1 60747and 20140204a

    Untitled

    Abstract: No abstract text available
    Text: MDO500-14N1 Standard Rectifier Module VRRM = 1400 V I FAV = 560 A VF = 0.98 V Single Diode Part number MDO500-14N1 Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop


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    PDF MDO500-14N1 60747and 20140204a

    Untitled

    Abstract: No abstract text available
    Text: MDO500-18N1 Standard Rectifier Module VRRM = 1800 V I FAV = 560 A VF = 0.98 V Single Diode Part number MDO500-18N1 Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop


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    PDF MDO500-18N1 60747and 20140204a

    Untitled

    Abstract: No abstract text available
    Text: MDO500-22N1 High Voltage Standard Rectifier Module VRRM = 2200 V I FAV = 560 A VF = 0.98 V Single Diode Part number MDO500-22N1 Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current


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    PDF MDO500-22N1 60747and 20140204a

    Untitled

    Abstract: No abstract text available
    Text: VUO25-12NO8 3~ Rectifier Standard Rectifier Module VRRM = 1200 V I DAV = 20 A I FSM = 380 A 3~ Rectifier Bridge Part number VUO25-12NO8 - ~ ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop


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    PDF VUO25-12NO8 60747and 20130529b

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    Abstract: No abstract text available
    Text: VBO36-16NO8 3~ 1~ Rectifier Standard Rectifier Module VRRM = 1600 V I DAV = 18 A I FSM = 550 A 1~ Rectifier Bridge Part number VBO36-16NO8 - ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop


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    PDF VBO36-16NO8 60747and 20130603c

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    Abstract: No abstract text available
    Text: VBO36-12NO8 3~ 1~ Rectifier Standard Rectifier Module VRRM = 1200 V I DAV = 18 A I FSM = 550 A 1~ Rectifier Bridge Part number VBO36-12NO8 - ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop


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    PDF VBO36-12NO8 60747and 20130603c

    VUO36-18NO8

    Abstract: No abstract text available
    Text: VUO36-18NO8 3~ Rectifier Standard Rectifier Module VRRM = 1800 V I DAV = 27 A I FSM = 550 A 3~ Rectifier Bridge Part number VUO36-18NO8 - ~ ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop


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    PDF VUO36-18NO8 60747and 20130529c VUO36-18NO8

    Untitled

    Abstract: No abstract text available
    Text: VUO25-16NO8 3~ Rectifier Standard Rectifier Module VRRM = 1600 V I DAV = 20 A I FSM = 380 A 3~ Rectifier Bridge Part number VUO25-16NO8 - ~ ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop


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    PDF VUO25-16NO8 60747and 20130529b

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    Abstract: No abstract text available
    Text: IX25MB080 3~ 1~ Rectifier Standard Rectifier Module VRRM = 800 V I DAV = 14 A I FSM = 380 A 1~ Rectifier Bridge Part number IX25MB080 - ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop


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    PDF IX25MB080 60747and 20131028a