Untitled
Abstract: No abstract text available
Text: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max
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NTE454
NTE454
20Vdc
30Vdc
200MHZ
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NTE454
Abstract: 200MHZ VG15
Text: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max
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NTE454
NTE454
20Vdc
30Vdc
200MHZ
200MHZ
VG15
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3n212
Abstract: No abstract text available
Text: 3N212 DUAL GATE MOSFET N-CHANNEL DEPLETION MODE DESCRIPTION: The ASI 3N212 is a Dual Gate Mosfet Designed for Low Noise Mixer Applications in VHF Receivers. FEATURES: • Integrated Gate Protection • High Conversion Gain PACKAGE STYLE TO-72 MAXIMUM RATINGS
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3N212
3N212
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2N3823 equivalent
Abstract: 2N3822 2N3823 2n3821 2N3822 equivalent 2N3823 DATASHEET depletion mode mosfet 100 MHz 2N3822 JAN 2N3821 JAN
Text: Technical Data 2N3821 JAN, JTX, JTXV 2N3822 JAN, JTX, JTXV 2N3823 JAN, JTX, JTXV MIL-PRF QPL DEVICES POWER MOSFET N CHANNEL DEPLETION MODE Processed per MIL-PRF-19500/375 MAXIMUM RATINGS Parameters / Test Conditions Gate-Source Voltage Drain-Source Voltage
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2N3821
2N3822
2N3823
MIL-PRF-19500/375
2N3821
2N3822
2N3823
2N3821,
2N382323
2N3823 equivalent
2N3822 equivalent
2N3823 DATASHEET
depletion mode mosfet 100 MHz
2N3822 JAN
2N3821 JAN
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LND150N8 equivalent
Abstract: depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET
Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
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LND150
O-243AA*
LND150N3
LND150N8
LND150ND
OT-89.
100nA
LND150N8 equivalent
depletion n-channel mosfet to-92
LND150
LND150N3
LND150N8
LND150ND
MOSFET IGSS 100nA VDS 20V
depletion-mode MOSFET
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 1.6A 10Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000
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IXTY1R6N100D2
IXTA1R6N100D2
IXTP1R6N100D2
O-252
O-263
O-220)
O-263
O-220
O-220AB
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V
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IXTY08N100D2
IXTA08N100D2
IXTP08N100D2
800mA
O-252
O-263
O-220)
O-263
O-220
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IXTP08N100D2
Abstract: IXTA08N100D2 IXTY08N100D2 08N100 08n10 500VID ixtp08n100 T08N
Text: Preliminary Technical Information IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V
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IXTY08N100D2
IXTA08N100D2
IXTP08N100D2
800mA
O-252
O-263
O-220)
O-263
O-220
IXTP08N100D2
IXTA08N100D2
IXTY08N100D2
08N100
08n10
500VID
ixtp08n100
T08N
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08N50D
Abstract: IXTY08N50D2
Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 RDS(on) N-Channel = > ≤ 500V 800mA 4.6Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous
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IXTY08N50D2
IXTA08N50D2
IXTP08N50D2
800mA
O-252
O-220)
O-263
O-220
O-263
08N50D
IXTY08N50D2
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IXTY1R6N50D2
Abstract: IXTP1R6N50D2
Text: Preliminary Technical Information IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 500V 1.6A 2.3Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous
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IXTY1R6N50D2
IXTA1R6N50D2
IXTP1R6N50D2
O-252
O-220)
O-263
O-220
O-263
O-220AB
IXTY1R6N50D2
IXTP1R6N50D2
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 RDS(on) N-Channel = > ≤ 500V 1.6A 2.3Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous
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IXTY1R6N50D2
IXTA1R6N50D2
IXTP1R6N50D2
O-252
O-220)
O-263
O-220
O-263
O-220Aea
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08N50D
Abstract: ixty08n50d2 IXTP08N50D2
Text: Preliminary Technical Information IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 500V 800mA 4.6Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous
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IXTY08N50D2
IXTA08N50D2
IXTP08N50D2
800mA
O-252
O-220)
O-263
O-220
O-263
08N50D
ixty08n50d2
IXTP08N50D2
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IXTH6N50D2
Abstract: IXTP6N50D2 IXTA6N50D2 6N50D2 IXTP6N50
Text: Preliminary Technical Information IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 500V 6A 500mΩ Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous
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IXTA6N50D2
IXTP6N50D2
IXTH6N50D2
O-263
O-220
O-247)
O-263
O-247
O-220AB
IXTH6N50D2
IXTP6N50D2
IXTA6N50D2
6N50D2
IXTP6N50
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTA1N170DHV IXTH1N170DHV Depletion Mode MOSFET VDSX ID on RDS(on) = > 1700V 1A 16 N-Channel TO-263HV (IXTA) G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 1700 V VDGX
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IXTA1N170DHV
IXTH1N170DHV
O-263HV
O-247HV
062in.
100ms
1N170D
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IXTH6N100D2
Abstract: No abstract text available
Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous
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IXTA6N100D2
IXTP6N100D2
IXTH6N100D2
O-263
O-220AB
O-220
O-247)
O-263
O-247
IXTH6N100D2
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Untitled
Abstract: No abstract text available
Text: ir e s ft DMCD1 DIE N-Channel Depletion-Mode Lateral DMOS FETs The DMCD is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high operating frequency. This DMOS process effectively bridges the operating
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SD2100
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PDF
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BSD20
Abstract: 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion
Text: _ I l . bb53T31 0012=134 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - S S '- IS ' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type.
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OCR Scan
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bb53T31
BSD20
BSD22
OT-143
bb53131
7Z90790
9010J
BSD22
gbs transistors
V1525
depletion MOSFET
n mosfet depletion
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PDF
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Untitled
Abstract: No abstract text available
Text: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.
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OCR Scan
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BSD12
7Z90791
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PDF
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BSD12
Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor
Text: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.
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OCR Scan
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BSD12
7Z907
a03ST0t.
BSD12
depletion MOSFET
Mosfet n-channel switching transistor
N-Channel depletion mos
gbs transistor
free transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.
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OCR Scan
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BSD22
OT-143
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PDF
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BSD10
Abstract: depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V
Text: • . N AMER PHILIPS/DISCRETE - ft — — — — bbSB'iai Q01724'5 S • E5E D BSD10 BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.
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OCR Scan
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G1724-S
BSD10
BSD12
BSD10
T-35-25
7Z90790
-r90X
depletion MOSFET
n channel depletion MOSFET
BSD12
gbs transistors
depletion mode power mosfet
7z87626
k 3525 MOSFET
convertor 5 V to -5 V
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PDF
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sst2100
Abstract: LPD-12
Text: SILICONIX INC IflE D • 0254735 ODIMGOI 1 ■ SD/SST2100 SERIES C T ’S ilic o n ix J J f in c o rp o ra te d N-Channel Depletion-M ode Lateral DMOS FETs - T The SD/SST2100 Series is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high
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OCR Scan
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SD/SST2100
OT-143
LPD-12
sst2100
LPD-12
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PDF
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transistor BD 430
Abstract: Depletion
Text: _ II _ bbS3T31 O O I S ^ H 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - 3 S '- 2. S' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.
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OCR Scan
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bbS3T31
BSD20
BSD22
OT-143
transistor BD 430
Depletion
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PDF
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Untitled
Abstract: No abstract text available
Text: — .1— N AUER PHILIPS/DISCRETE ^[,53^31 0D17S4'5 S • BSD10 BSD12 ESE D T - Z S -Z S - MOSFET N-CHANNEL DEPLETION SW ITCHING TRAN SISTO RS Symmetrical insulated-gate silicon M O S field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.
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OCR Scan
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0D17S4
BSD10
BSD12
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PDF
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