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    DEPLETION MODE POWER MOSFET Search Results

    DEPLETION MODE POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    DEPLETION MODE POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXTA02N100D2

    Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2
    Text: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .


    Original     		AN-D16, IXTA02N100D2 depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2 PDF

    r08 sot223

    Abstract: CPC5602
    Text: CPC5602 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Rating 350 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 350V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)


    Original     		CPC5602 CPC5602 DS-CPC5602-R08 r08 sot223 PDF

    Untitled

    Abstract: No abstract text available
    Text: CPC5603 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)


    Original     		CPC5603 OT-223 CPC5603 DS-CPC5603-R07 PDF

    b0742

    Abstract: *b0742 cpc5603
    Text: CPC5603 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)


    Original     		CPC5603 CPC5603 DS-CPC5603-R06 b0742 *b0742 PDF

    b0742

    Abstract: No abstract text available
    Text: CPC5602 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Rating 350 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 350V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)


    Original     		CPC5602 OT-223 DS-CPC5602-R09 b0742 PDF

    CPC5622A

    Abstract: CPC5602
    Text: CPC5602 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Rating 350 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 350V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-resistance: 8 (Typical) @ 25°C


    Original     		CPC5602 CPC5602 DS-CPC5602-R07 CPC5622A PDF

    CPC5603CTR

    Abstract: CPC5603C CPC5620A CPC5621A CPC5622A Depletion MOSFET 20V Depletion
    Text: CPC5603 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 8 (Typical) @ 25°C


    Original     		CPC5603 OT-223 CPC5603 DS-CPC5603-R04 CPC5603CTR CPC5603C CPC5620A CPC5621A CPC5622A Depletion MOSFET 20V Depletion PDF

    Untitled

    Abstract: No abstract text available
    Text: CPC5603 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V Ω Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 8Ω (Typical) @ 25°C


    Original     		CPC5603 OT-223 DS-CPC5603-R04 PDF

    CPC5602C

    Abstract: CPC5602 CPC5602CTR CPC5620A CPC5621A CPC5622A Power MOSFET SOT-223 depletion N-Channel Depletion Mode FET
    Text: CPC5602 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Rating 350 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 350V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-resistance: 8 (Typical) @ 25°C


    Original     		CPC5602 OT-223 CPC5602 DS-CPC5602-R06 CPC5602C CPC5602CTR CPC5620A CPC5621A CPC5622A Power MOSFET SOT-223 depletion N-Channel Depletion Mode FET PDF

    Untitled

    Abstract: No abstract text available
    Text: CPC5603 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 8 (Typical) @ 25°C


    Original     		CPC5603 CPC5603 DS-CPC5603-R05 PDF

    IXYS

    Abstract: "Power MOSFETs"
    Text: Depletion-Mode D2TM Power MOSFETs Solutions for dynamic load & zero power load switch design ARE YOU READY? To battle power consumption challenges? Features applications ƒƒ “Normally-On” Operation ƒƒ Low Rds on ƒƒ Linear Mode Tolerant ƒƒ Fast Switching


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES


    Original     		UF601 UF601 UF601L-AE3-R UF601G-AE3-R OT-23 QW-R502-699 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF601Q Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601Q is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES


    Original     		UF601Q UF601Q UF601QG-AE3-R UF601QG-AE2-R OT-23 OT-23-3 601QG QW-R502-A25 UF601at PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES


    Original     		UF601 UF601 UF601G-AA3-R UF601G-AE3-R OT-223 OT-23 QW-R502-699 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET 3 „ DESCRIPTION 1 2 The UTC UF601 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.


    Original     		UF601 UF601 OT-23 SC-59) UF601L-AE3-R UF601G-AE3-R QW-R502-699 PDF

    mosfet amplifier

    Abstract: PLCC-20 SOIC-14 UCC1839 UCC2839 UCC3839
    Text: UCC1839 UCC2839 UCC3839 Secondary Side Average Current Mode Controller FEATURES • Practical Secondary Side Control of Isolated Power Supplies • Provides a Self Regulating Bias Supply From a High Input Voltage Using an External N-Channel Depletion Mode


    Original     		UCC1839 UCC2839 UCC3839 UCC3839 UDG-97012 UDG-97013 mosfet amplifier PLCC-20 SOIC-14 UCC1839 UCC2839 PDF

    highside switch

    Abstract: charge pump mosfet driver charge pump mosfet driver external C110 TPS9103 TPS9103PWLE
    Text: Power Supply for Gallium Arsenide Power Amplifiers Mini Data Sheet Description The TPS9103 is a highly integrated power supply for depletion mode GaAs power amplifiers PA in cellular handsets and other wireless communications equipment. Functional integration and low profile packaging


    Original     		TPS9103 highside switch charge pump mosfet driver charge pump mosfet driver external C110 TPS9103PWLE PDF

    marking SH SOT23 mosfet

    Abstract: DMZ5501 DMN5501 KP 72 marking SH SOT23 KP SOT23 DMZ5
    Text: DMN5501/DMZ5501 Depletion-Mode Power MOSFET General Features Ordering Information 550V 60 Ω 200mA Package Marking DMN5501 TO-92 DMN5501 DMZ5501 SOT-23 5501 ina Part Number im Absolute Maximum Ratings Parameter TA=25℃ unless otherwise specified DMN5501


    Original     		DMN5501/DMZ5501 200mA DMN5501 DMZ5501 OT-23 74tten marking SH SOT23 mosfet DMZ5501 DMN5501 KP 72 marking SH SOT23 KP SOT23 DMZ5 PDF

    2N3823 equivalent

    Abstract: 2N3822 2N3823 2n3821 2N3822 equivalent 2N3823 DATASHEET depletion mode mosfet 100 MHz 2N3822 JAN 2N3821 JAN
    Text: Technical Data 2N3821 JAN, JTX, JTXV 2N3822 JAN, JTX, JTXV 2N3823 JAN, JTX, JTXV MIL-PRF QPL DEVICES POWER MOSFET N CHANNEL DEPLETION MODE Processed per MIL-PRF-19500/375 MAXIMUM RATINGS Parameters / Test Conditions Gate-Source Voltage Drain-Source Voltage


    Original     		2N3821 2N3822 2N3823 MIL-PRF-19500/375 2N3821 2N3822 2N3823 2N3821, 2N382323 2N3823 equivalent 2N3822 equivalent 2N3823 DATASHEET depletion mode mosfet 100 MHz 2N3822 JAN 2N3821 JAN PDF

    LND01K1-G

    Abstract: No abstract text available
    Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement


    Original     		LND01 LND01 DSFP-LND01 A042712 LND01K1-G PDF

    TPS9103

    Abstract: TPS9103PWLE TPS9103Y
    Text: TPS9103 POWER SUPPLY FOR GaAs POWER AMPLIFIERS SLVS131A − OCTOBER 1995 − REVISED JULY 1996 D Charge Pump Provides Negative Gate Bias D D D D D D PW PACKAGE TOP VIEW for Depletion-Mode GaAs Power Amplifiers Buffered Clock Output to Drive Additional External Charge Pump


    Original     		TPS9103 SLVS131A 135-m 20-Pin TPS9103 TPS9103PWLE TPS9103Y PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS9103 POWER SUPPLY FOR GaAs POWER AMPLIFIERS ^ • • • • • • • _ SLVS131 - OCTOBER 1995 On-chip Charge Pump Provides Negative Gate Bias for Depletion-Mode GaAs Power Amplifiers Buffered Clock Output to Drive Additional


    OCR Scan     		TPS9103 SLVS131 200-mii 20-Pin 01QD133 PDF

    n mosfet depletion 600V

    Abstract: No abstract text available
    Text: SIPMOS N Channel MOSFET BSP 135 Preliminary Data • SIPMOS - depletion mode • Drain-source voltage • Continuous drain current Vfes = 600V I B = 0.100A • Drain-source on-resistance • Total power dissipation flDS on = 60Q P0 = 1,5W ( Type Marking Ordering code for


    OCR Scan     		Q62702-S655 56tance 00A/f/s 00A//JS n mosfet depletion 600V PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP 129 SIPMOS N Channel MOSFET 32E D • fl23b320 GG171Q3 5 « S I R Preliminary Data • • • • • SIEMENS/ SPCL-, SEMICONDS SIPMOS - depletion mode Drain-source voltage Continuous drain current Drain-source on-resistance Total power dissipation Vis = 240V


    OCR Scan     		fl23b320 GG171Q3 Q62702-S510 00A/JUS 00A//JS PDF