transistor d 1556
Abstract: No abstract text available
Text: D 100GHz WDM Filter Components for OADM Features • 27.5GHz and 50GHz clear channel passbands • ITU and custom wavelengths Bookham narrowband filters leverage the proprietary Advanced Energetic Deposition AED process to produce the industry’s best banded filter
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50GHz
transistor d 1556
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Specification Quartz Crystals 6 Mhz
Abstract: 4512 Specification Quartz Crystals 5 Mhz
Text: Quality Quartz Products Precision Quartz Blanks For Sensors, Optics, Deposition Control All crystals and blanks are manufactured from pure Z-growth Cultured Quartz grown in the USA and processed by Bliley Technologies Inc. The Quartz is available in three grades:
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CRB20
Abstract: CRB25
Text: Resistors Metal film resistors CRB25 6.0 2.4 φ size: 1 / 4W CRB25 resistors are the same size as our small carbon film resistors and are coated with a nickel–chromium film. The resistive material is applied by means of vacuum deposition, which ensures high stability and reliability. ROHM resistors
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CRB25
CRB25
RNR55
RLR07
CRB20
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Untitled
Abstract: No abstract text available
Text: 新製品紹介 高送り工具用 PVD コーティングインサート PVD Coated Insert for High Efficient Machining Insert：JS4060 自動車産業用をはじめとした金型 Chemical Vapor Deposition）を用 加工時の溶着起因のチッピングの低
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JS4060
SCM440
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200G
Abstract: WDM Filter
Text: D 200GHz WDM Filter Components for OADM Features • 64GHz clear channel passband • ITU and custom wavelengths Bookham narrowband filters leverage the proprietary Advanced Energetic Deposition AED process to produce the industry’s best banded filter
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200GHz
64GHz
200G
WDM Filter
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Untitled
Abstract: No abstract text available
Text: S-CAAAB-5MG03 Quartz Thickness – Monitor Crystal FEATURE – – – – – – – Quartz thickness sensor for low-stress metal depositions Gold-Electrode Frequency: 5 MHz Low contact resistance High chemic stabilization Low-stress metal depositions: Au, Ag, Cu
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S-CAAAB-5MG03
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thickness sensor
Abstract: No abstract text available
Text: S-CAAAA-5MG05 Quartz Thickness – Monitor Crystal FEATURE – – – – – – Quartz thickness sensor for low-stress metal depositions Gold-Electrode Frequency: 5 MHz Low contact resistance High chemic stabilization Low-stress metal depositions: Au, Ag, Cu
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S-CAAAA-5MG05
thickness sensor
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1x4 splitter
Abstract: No abstract text available
Text: PLC Splitter Module P1C Silica-on-Silica Planar Lightwave Circuit PLC Splitter • 1x4, 1x8, 1x16, 1x32, 1x64 modules* • Packaged Optical Waveguide chips based on Patented Plasma Chemical Vapor Deposition (P-CVD) technology for stable optical characteristics and high reliability
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GR1209
GR1221
Y919-E-01B
1x4 splitter
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Untitled
Abstract: No abstract text available
Text: 技術トピックス 〈技術トピックス〉 伝導冷却酸化物超電導マグネットの開発 表１ 当 社 で は 独 自 開 発 し た IBAD 法（ Ion Beam マグネットの諸元 超電導材料 Assisted Deposition Process）を適用したイット
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Abstract: No abstract text available
Text: HVR and HVD Series — High Voltage Leaded Resistors/ Dividers Utilizing fine film resistor deposition technology SEI now offers a new level of stability and performance in leaded resistors. Competing hybrid manufacturing abilities have constraints due to their
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Abstract: No abstract text available
Text: HVD Series — High Voltage Radial Leaded Plate Resistor Divider Utilizing fine film resistor deposition technology SEI now offers a new level of stability and performance in leaded resistor dividers. Competing product technologies have constraints due to their
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ir cut filter
Abstract: 420625
Text: IR CUT FILTER - ALD PRODUCT BRIEF KEY FEATURES AND BENEFITS API Nanotronics Introduces Low Edge Shift IR Cut Filters from its NanoOpto Division based on Atomic Layer Deposition. Ideal for high performance digital imaging applications, they are fabricated with a conformal atomic
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x2295
ir cut filter
420625
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302v
Abstract: No abstract text available
Text: SLD302V SONY 200m W High Power Laser Diode Description SLD 302V are gain-guided, high-power laser diodes fabricated by MOCVD. M OCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Package Outline
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SLD302V
E70776D13-HP
302v
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sony 0642
Abstract: No abstract text available
Text: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron
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2SK677H5
2SK677H5
D0G312b
sony 0642
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SLD301V-21
Abstract: SLD301V SLD301 SLD301V-2 SLD301V-3 1R1H
Text: SLD301V SONY lO O m W High Power Laser Diode Description Package O utline U nit: mm SLD301V is a gain-guided, high-powered laser diode fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current
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SLD301V
SLD301V
SLD301V-21
SLD301
SLD301V-2
SLD301V-3
1R1H
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WR137 waveguide
Abstract: No abstract text available
Text: WAVEGUIDE ATTENUATOR ELEMENTS Product Description Florida RF Labs offers a co m p le te line of standard an d custom w a veg uide attenuator elements, Deposition of thin film metallization on a glass substrate with optical grade finish produces an extremely stable resistive film. A protective coating is evaporated
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rohm CRB25 series
Abstract: crb25 CRB20 Rohm CRB25 CR850
Text: Metal Film Resistors CRB (JIS Standard : JIS C 5724) The same size as small carbon film resistors, but made of nickel chromium film, these resistors are reliable because the resistive element is formed by ROHM’s unique vacuum metal deposition process, and is highly stable.
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330kfl
CRB20
CRB25
CRB50
CRB20
CRB50
rohm CRB25 series
crb25
Rohm CRB25
CR850
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SONY 171
Abstract: No abstract text available
Text: SONY SLD301V 100mW High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Po = 90mW
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100mW
SLD301V
SS-00259,
SLD301V
SS00259
net/Sonylnfo/procurementinfo/ss00259/
M-248
LO-11)
SONY 171
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Untitled
Abstract: No abstract text available
Text: SLD301V SONY. l O O m W High Power Laser Diode Description SLD301V is a gain-guided, high-powered laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Po=90mW
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SLD301V
SLD301V
100nnW
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Untitled
Abstract: No abstract text available
Text: PRODUCTS Our process begins with a high thermal conductivity ceramic core. High-stability or low-resistance-value resistors are then fit ted with terminations. The addi tion of high vacuum Ni-chrome film deposition assures consist ent long term stability. Parts are
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Untitled
Abstract: No abstract text available
Text: SLD303V SONY, 500mW High Power Laser Diode Description Package Outline U n it: mm SLD303V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power o utp ut • Small operating current
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SLD303V
500mW
SLD303V
500mW
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Untitled
Abstract: No abstract text available
Text: SLD302V SONY» 2 0 0 m W High Power Laser Diode D e s c rip tio n P a c k a g e O u tlin e S L D 3 02 V are gain-guided, high-power laser diodes fabricated by MOCVD. U n it: m m R a tir e n c t M O CVD: Metal Organic Chemical Vapor Deposition F e a tu re s
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SLD302V
200mW
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Untitled
Abstract: No abstract text available
Text: SONY CORP/COMPONENT P RODS M^E D • 6362363 0003113 b «SONY 2SK676H51 SONY. AtGaAs/GaAs Low Noise Microwave HEM T GHIP Description Chip outline •Unit: jum The 2S K 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD M etal Organic Chemical Vapor Deposition . This 0.5 micron
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2SK676H51
2SK676H5
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Untitled
Abstract: No abstract text available
Text: SLD304V SONY, lOOOmW High Power Laser Diode Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Package Outline
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SLD304V
SLD304V
900mW
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