Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DEVICE MARKING CODE GA Search Results

    DEVICE MARKING CODE GA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    DEVICE MARKING CODE GA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking codes fairchild

    Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


    Original     		PDF AND8004/D r14525 marking codes fairchild HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D

    marking codes fairchild

    Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


    Original     		PDF AND8004/D 14xxx r14525 AND8004/D marking codes fairchild SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L

    Y1416

    Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information


    Original     		PDF AND8004/D 14xxx Y1416 vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363

    kvt22

    Abstract: KVL11 KPT23 ON Semiconductor marking k1648 KLT20 HEL16 KEL32 KEL01 xaa9646
    Text: AND8002/D ECLinPS, ECLinPS Lite and ECLinPS Plus Device Type and Date Code Marking Guide Gary Richards, ECL Logic Product Engineering http://onsemi.com APPLICATION NOTE need ON Semiconductor’s marking spec 12MON00232D and S.O.P. 7–19 ID of Products to Location of


    Original     		PDF AND8002/D 12MON00232D r14525 kvt22 KVL11 KPT23 ON Semiconductor marking k1648 KLT20 HEL16 KEL32 KEL01 xaa9646

    2N55551

    Abstract: 2N5551 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM
    Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit


    Original     		PDF 2N5550, 2N5551 2N5550 2N5550/D 2N55551 2N5551 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM

    2n5551

    Abstract: 2N55551 2N5551 circuit 2n5550
    Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit


    Original     		PDF 2N5550, 2N5551 2N5550 2N5551 2N55551 2N5551 circuit

    2SC2012

    Abstract: No abstract text available
    Text: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications


    Original     		PDF SC201 SC201-2 SC201-4 SC201-6 SC201-8 SC201 15x15mm 2SC2012

    marking code GC diode

    Abstract: SC201 SC201-2 SC201-4 SC201-6 SC201-8 diode marking Gc marking CODE GA
    Text: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications


    Original     		PDF SC201 SC201-2 SC201-4 SC201-6 SC201 15x15mm marking code GC diode SC201-2 SC201-4 SC201-6 SC201-8 diode marking Gc marking CODE GA

    4060BE

    Abstract: No abstract text available
    Text: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications


    Original     		PDF SC201 200de SC201 15x15mm 4060BE

    2N6426G

    Abstract: 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64
    Text: 2N6426*, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage


    Original     		PDF 2N6426* 2N6427 2N6426, 2N6426/D 2N6426G 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64

    2N6426

    Abstract: No abstract text available
    Text: 2N6426*, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage


    Original     		PDF 2N6426* 2N6427 2N6426, 2N6426 2N6426G 2N6426RLRA 2N6427 2N6427RLRA 2N6427RLRAG BRD8011/D.

    77V1254

    Abstract: No abstract text available
    Text: 77V1254L25 Device Errata Notes Supplemental Information The revision of the 77V1254L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location


    Original     		PDF 77V1254L25 77V1254L25 77V1254 L25PG 77V1254

    77V1254

    Abstract: 77V1254L25
    Text: 77V1254L25 Device Errata Notes Supplemental Information The revision of the 77V1254L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location


    Original     		PDF 77V1254L25 77V1254L25 77V1254 L25PG 77V1254

    CBT3904DW1

    Abstract: marking code 12 SOT-363 amplifier dely marking 12 SOT-363 amplifier esd 200
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company Dual GeneraL Purpose Transistors CBT3904DW1 SOT-363 Surface Mount Package Marking Code = MA with date code Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS


    Original     		PDF CBT3904DW1 OT-363 C-120 CBT3904DW1 Rev260405E marking code 12 SOT-363 amplifier dely marking 12 SOT-363 amplifier esd 200

    Untitled

    Abstract: No abstract text available
    Text: 77V1054L25 Device Errata Notes Supplemental Information The revision of the 77V1054L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1054 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location


    Original     		PDF 77V1054L25 77V1054 77V1254 L25PG

    Untitled

    Abstract: No abstract text available
    Text: 77V1053L25 Device Errata Notes Supplemental Information The revision of the 77V1053L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1053 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location


    Original     		PDF 77V1053L25 77V1053 77V1254 L25PG

    BF1009

    Abstract: 1009 Q62702-F1613
    Text: BF 1009 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF Q62702-F1613 OT-143 Jul-29-1996 BF1009 1009 Q62702-F1613

    smd MARKING CODE G72

    Abstract: No abstract text available
    Text: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package


    Original     		PDF MW-16 Q62702-G72 GPW05969 smd MARKING CODE G72

    M3-12H

    Abstract: fujitsu gaas marking code fujitsu gaas mm catalog CAPACITOR JL 1500 SJPL 4012K 1994C
    Text: PACKAGE MARKING Fujitsu's optoelectronic device has the following marking attached to each package or package case. cP 1. Manufacturer's Name: F or FUJITSU 2. Part Number: See part numbering systems 3. Serial Number: Serial number consists of Date Code and Sequence Number.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped


    OCR Scan     		PDF Q62702G72

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CGY93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package


    OCR Scan     		PDF CGY93P Q62702G72

    sot marking code ZS

    Abstract: Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M
    Text: NPN Silicon RF Transistor BFR 106 • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code


    OCR Scan     		PDF OT-23 sot marking code ZS Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M

    GaAs FET cfy 14

    Abstract: No abstract text available
    Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration


    OCR Scan     		PDF Q62702-F1393 Q62702-F1394 GaAs FET cfy 14

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 2040W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F1776 OT-343