Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.
|
Original
|
BC847QAS
DFN1010B-6
OT1216)
BC857QAS.
BC847QAPN.
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB75UPE
DFN1010D-3
OT1215)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
|
Original
|
PBSS4260QA
DFN1010D-3
OT1215)
PBSS5260QA.
AEC-Q101
|
PDF
|
PQMD12
Abstract: No abstract text available
Text: Small & Powerful NXP MOSFETs and bipolar transistors in DFN1010 First 3 A transistors in a 1.1 mm² leadless plastic package This new product series, housed in tiny leadless packages and ideal for use in tightfootprint power management and load switches, includes small yet powerful high-Ptot
|
Original
|
DFN1010
OT963
DFN1010B-6
DFN0806
PQMD12
|
PDF
|
MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Text: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMDXB600UNE
DFN1010B-6
OT1216)
MOSFET TRANSISTOR SMD MARKING CODE 11
NXP SMD TRANSISTOR MARKING CODE s1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB75UPE
DFN1010D-3
OT1215)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 PMDXB950UPE 20 V, dual P-channel Trench MOSFET 10 September 2013 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMDXB950UPE
DFN1010B-6
OT1216)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB65ENE
DFN1010D-3
OT1215)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS4230QA 30 V, 2 A NPN low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
|
Original
|
PBSS4230QA
DFN1010D-3
OT1215)
PBSS5230QA.
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB65UPE
DFN1010D-3
OT1215)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS5260QA 60 V, 1.7 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
|
Original
|
PBSS5260QA
DFN1010D-3
OT1215)
PBSS4260QA.
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB56EN
DFN1010D-3
OT1215)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic
|
Original
|
PMCXB900UE
DFN1010B-6
OT1216)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB65ENE
DFN1010D-3
OT1215)
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB40UNE
DFN1010D-3
OT1215)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB40UNE
DFN1010D-3
OT1215)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS5230QA 30 V, 2 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
|
Original
|
PBSS5230QA
DFN1010D-3
OT1215)
PBSS4230QA.
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS5130QA 30 V, 1 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
|
Original
|
PBSS5130QA
DFN1010D-3
OT1215)
PBSS4130QA.
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Reflow soldering footprint Footprint information for reflow soldering of DFN1010D-3 package SOT1215 1.2 0.45 2x 0.3 1.1 0.35 (2x) 0.4 0.25 (2x) 0.75 0.3 0.5 1.5 1.4 0.4 0.5 0.4 0.3 0.5 1.3 0.4 0.3 0.4 0.5 1.3 solder land solder land plus solder paste occupied area
|
Original
|
DFN1010D-3
OT1215
sot1215
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Reflow soldering footprint Footprint information for reflow soldering of DFN1010B-6 package SOT1216 0.9 0.35 0.35 0.15 0.2 6x 0.15 1.3 1.2 0.35 0.25 0.5 0.6 0.35 0.25 1.1 0.3 (6x) 1 1.35 solder land solder land plus solder paste occupied area solder resist
|
Original
|
DFN1010B-6
OT1216
sot1216
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
NX7002BKXB
DFN1010B-6
OT1216)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB350UPE 20 V, P-channel Trench MOSFET 19 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB350UPE
DFN1010D-3
OT1215)
|
PDF
|
bc807
Abstract: No abstract text available
Text: ' BC807-25QA; BC807-40QA ' 1 45 V, 500 mA PNP general-purpose transistors Rev. 1 — 30 August 2013 Product data sheet 1. Product profile 1.1 General description 500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 SOT1215) Surface-Mounted Device (SMD) plastic package with visible
|
Original
|
BC807-25QA;
BC807-40QA
DFN1010D-3
OT1215)
BC807-25QA
BC817-25QA
BC817-40QA
bc807
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 25 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB56EN
DFN1010D-3
OT1215)
|
PDF
|