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    DFN20 Price and Stock

    Vishay Semiconductors 6DFN20CA-M3-I

    600W,20V 5%, DFN3820A BIDIR TVS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 6DFN20CA-M3-I Digi-Reel 13,990 1
    • 1 $0.55
    • 10 $0.34
    • 100 $0.2169
    • 1000 $0.14769
    • 10000 $0.11884
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    6DFN20CA-M3-I Cut Tape 13,990 1
    • 1 $0.55
    • 10 $0.34
    • 100 $0.2169
    • 1000 $0.14769
    • 10000 $0.11884
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    6DFN20CA-M3-I Reel 14,000
    • 1 -
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    Vishay Semiconductors 6DFN20A-M3-I

    600W,20V 5%, DFN3820A TVS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 6DFN20A-M3-I Cut Tape 13,980 1
    • 1 $0.39
    • 10 $0.265
    • 100 $0.39
    • 1000 $0.11
    • 10000 $0.102
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    6DFN20A-M3-I Digi-Reel 13,980 1
    • 1 $0.39
    • 10 $0.265
    • 100 $0.39
    • 1000 $0.11
    • 10000 $0.102
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    6DFN20A-M3-I Reel 14,000
    • 1 -
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    Techflex Inc DFN2.07BK50

    SLEEVING 2.07" ID POLY 50' BLACK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DFN2.07BK50 1 1
    • 1 $99.7
    • 10 $75.497
    • 100 $57.1752
    • 1000 $57.1752
    • 10000 $57.1752
    		Buy Now

    Techflex Inc DFN2.07BK100

    SLEEVING 2.07" ID POLY 100' BLK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DFN2.07BK100 1
    • 1 $158.75
    • 10 $158.75
    • 100 $158.75
    • 1000 $158.75
    • 10000 $158.75
    		Buy Now

    Vishay Semiconductors 6DFN20A-M3-H

    600W,20V 5%, DFN3820A TVS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 6DFN20A-M3-H Reel 10,500
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    Find more DFN20 price and stock on Findchips.com

    DFN20 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DFN20 On Semiconductor MECHANICAL CASE OUTLINE Original PDF
    DFN2020-6 NXP Semiconductors AN11304 - MOSFET load switch PCB with thermal measurement Original PDF
    DFN2020MD-6 NXP Semiconductors AN11304 - MOSFET load switch PCB with thermal measurement Original PDF
    DFN2.07BK Techflex Solid Tubing, Sleeving, Cables, Wires - Management, DURA-FLEX 2.07" BLACK 100' Original PDF
    DFN2.07BK100 Techflex SLEEVING 2.07"" ID POLY 100' BLK Original PDF
    DFN2.07BK50 Techflex Solid Tubing, Sleeving, Cables, Wires - Management, DURA-FLEX 2.07" BLACK 50' Original PDF

    DFN20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB15XP DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: N3 PTVSxU1UPA series HU SO 300 W Transient Voltage Suppressor Rev. 1 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description 300 W unidirectional Transient Voltage Suppressor TVS in a DFN2020-3 (SOT1061) leadless medium power Surface-Mounted Device (SMD) plastic package, designed for


    Original     		PDF DFN2020-3 OT1061) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N2 020 -6 PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat BISS transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4160PANP DFN2020-6 OT1118) PBSS4160PAN. PBSS5160PAP. AEC-Q101

    DFN2020

    Abstract: DMS2120LFWB power diode package DFN3020 632 diode DMP2160UFDB
    Text: New Product Announcement MOSFET solutions save space and improve performance The DMS2220LFDB and DMS2120LFWB co-package a 20V P-channel enhancement mode MOSFET with a companion diode in a choice of 2mmx2mm DFN2020 and 3mmx2mm DFN3020 packages. The DMP2160UFDB, copackages two of the same


    Original     		PDF DMS2220LFDB DMS2120LFWB DFN2020 DFN3020 DMP2160UFDB, DFN2020 DMP2160UFDB DMS2220LFDB power diode package DFN3020 632 diode DMP2160UFDB

    DFN2020-6

    Abstract: No abstract text available
    Text: 020 -6 PMDPB55XP DF N2 20 V, dual P-channel Trench MOSFET Rev. 3 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMDPB55XP DFN2020-6 OT1118) DFN2020-6

    marking code 2Q

    Abstract: No abstract text available
    Text: PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4260PANP DFN2020-6 OT1118) PBSS4260PAN. PBSS5260PAP. AEC-Q101 marking code 2Q

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: No abstract text available
    Text: PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 2 — 2 May 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMDPB55XP DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1

    SMD TRANSISTOR MARKING 2e

    Abstract: 2e SMD PNP TRANSISTOR
    Text: PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5130PAP DFN2020-6 OT1118) PBSS4130PANP. PBSS4130PAN. AEC-Q101 SMD TRANSISTOR MARKING 2e 2e SMD PNP TRANSISTOR

    npn transistor footprint

    Abstract: No abstract text available
    Text: PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4260PAN DFN2020-6 OT1118) PBSS4260PANP. PBSS5260PAP. AEC-Q101 npn transistor footprint

    smd diode marking 2U

    Abstract: smd diode marking codes 2U smd diode code marking 2U marking 2U 28 diode DIODE smd marking 2U diode SMD marking code 2u 2U marking code diode smd smd diode marking 2U 40 marking 2U diode smd
    Text: PMDPB95XNE 30 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMDPB95XNE DFN2020-6 OT1118) smd diode marking 2U smd diode marking codes 2U smd diode code marking 2U marking 2U 28 diode DIODE smd marking 2U diode SMD marking code 2u 2U marking code diode smd smd diode marking 2U 40 marking 2U diode smd

    Untitled

    Abstract: No abstract text available
    Text: MSWSH-020-24-DFN2020 PIN DIODE SHUNT SWITCH ELEMENT 1 2 3 Molded Plastic DFN2020 Description Features • • • • A broadband, high linearity, medium power shunt switch element in a 2.0 X 2.0 mm DFN package. This device is designed for wireless telecommunications infrastructure


    Original     		PDF MSWSH-020-24-DFN2020 DFN2020) A17162

    marking N7

    Abstract: No abstract text available
    Text: DMN1019UFDE Green 12V N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) max 12V 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V Package ID max TA = +25°C U-DFN2020-6 Type E 11A 10 9A 8A 5A • •


    Original     		PDF DMN1019UFDE AEC-Q101 U-DFN2020-6 DS35561 marking N7

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 2 July 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB40SNA DFN2020MD-6 OT1220) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB85ENEA 60 V, single N-channel Trench MOSFET 19 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB85ENEA DFN2020MD-6 OT1220) AEC-Q101

    DMN2015UFDE

    Abstract: No abstract text available
    Text: DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) max Package 11.6mΩ @ VGS = 4.5V 20V 15mΩ @ VGS = 2.5V ID max TA = +25°C 10.5A U-DFN2020-6 Type E 9.4A Description Applications • • • 0.6mm profile – ideal for low profile applications


    Original     		PDF DMN2015UFDE U-DFN2020-6 AEC-Q101 DS35560 DMN2015UFDE

    PMDPB70EN

    Abstract: No abstract text available
    Text: PMDPB70EN 30 V, dual N-channel Trench MOSFET Rev. 1 — 25 April 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMDPB70EN DFN2020-6 OT1118) PMDPB70EN

    marking code 1s

    Abstract: No abstract text available
    Text: PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB33XP DFN2020MD-6 OT1220) marking code 1s

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 NX2020P1 30 V, single P-channel Trench MOSFET 22 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF NX2020P1 DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: DF N2 020 -6 PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat BISS transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5160PAP DFN2020-6 OT1118) PBSS4160PANP. PBSS4160PAN. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 0'  SOT1220 ' 1   DFN2020MD-6; reel pack; standard product orientation; 12NC ending 115 Rev. 2 — 19 February 2013 Packing information 1. Packing method Printed plano box Barcode label Reel Tape QA Seal Preprinted ESD warning PQ-label permanent) Circular sprocket holes opposite the


    Original     		PDF OT1220 DFN2020MD-6; 001aak603 DFN2020 OT1220

    marking n8

    Abstract: No abstract text available
    Text: DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary ID max TA = +25°C RDS ON max Package 38mΩ @ VGS = 10V U-DFN2020-6 Type E V(BR)DSS 60V Features and Benefits 47mΩ @ VGS = 4.5V 6.5A 5.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMN6040SFDE U-DFN2020-6 AEC-Q101 DS35792 marking n8

    Untitled

    Abstract: No abstract text available
    Text: PMPB13XNE 30 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB13XNE DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4130PANP DFN2020-6 OT1118) PBSS4130PAN. PBSS5130PAP. AEC-Q101

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: No abstract text available
    Text: 020 -6 PMDPB58UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic


    Original     		PDF PMDPB58UPE DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1