J305
Abstract: No abstract text available
Text: MOTOROLA Order this document by J304/D SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Am plifiers N-Channel — Depletion J304 J305 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Gate Voltage V DG -3 0 Vdc Gate-Source Voltage VGS -3 0 Vdc Gate Current
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J304/D
226AA)
J305
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Untitled
Abstract: No abstract text available
Text: MwT-0208-101 DG 2-8 GHz MMIC AMPLIFIER MODULE MICROWAVE TECHNOLOGY 4266 Solar Way Fremont, CA 94538 510-651-6700 FAX510-651-2208 • 28 dB TYPICAL SMALL SIGNAL GAIN • 1.5:1 TYPICAL INPUT AND OUTPUT VSWR • 45 dB TYPICAL REVERSE ISOLATION • ±0.6 dB TYPICAL OUTPUT POWER FLATNESS
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MwT-0208-101
FAX510-651-2208
-0208-101DG
-M30-
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101dg
Abstract: No abstract text available
Text: MwT -0208-101 DG MHZ 2-8 GHz MMIC AMPLIFIER MODULE MICRO WA VE TECHNOLOG Y 4268 Solar W ay Fremont, CA 94538 510-651-6700 FAX 510-651-2208 28 dB TYPICALSMALL SIG NALGAIN 1.5:1 TYPICAL INPUT AND OUTPUT VSWR 45 dB TYPICAL REVERSE ISOLATION i0.6 dB TYPICAL OUTPUT POWER FLATNESS
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MwT-0208-101DG-GFP
101dg
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Untitled
Abstract: No abstract text available
Text: MwT-0208-101 DG 2»8 GHz MMIC AMPLIFIER MODULE M i c r o W a ve T e c h n o l o g y MICROWAVE 4 2 6 8 solar way Fremont, c a 94538 415-651-6700 f a x 415-651-2208 TECHNOLOGY 37E blSMlDG QÜD0070 7 I MRIiJV _ti -. 30 dB TYPICAL SMALL SIGNAL GAIN 1.5:1 TYPICAL INPUT AND OUTPUT VSWR
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MwT-0208-101
D0070
017dB/
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LTC5599
Abstract: No abstract text available
Text: LTC5599 30MHz to 1300MHz Low Power Direct Quadrature Modulator Description Features n n n n n Frequency Range: 30MHz to 1300MHz Low Power: 2.7V to 3.6V Supply; 28mA Low LO Carrier Leakage: –51.5dBm at 500MHz Side-Band Suppression: –52.6dBc at 500MHz Output IP3: 20.8dBm at 500MHz
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LTC5599
30MHz
1300MHz
500MHz
156dBm/Hz
65dBm
LTC5599
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TC9240F
Abstract: 66 pin ic QFP80-P-1420-0 toshiba tc9240f 68SEL S22C1
Text: TO SH IBA TC9240F TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9240F AUDIO LCD DRIVER IC The TC9240F is a driver 1C designed for exclusive use for output expansion LCD which is controlled by serial data. FEATURES • 1 / 2 or 1 / 3 duty and 1/2 or 1/3 bias can be switched.
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TC9240F
TC9240F
QFP80-P-1420-0
66 pin ic
toshiba tc9240f
68SEL
S22C1
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B37940-K5220-J62
Abstract: siemens rs 1016 B37940K5220J62 B54102 mmic-amplifier CGY120 B54102-A1471-J60 B37490-K5120-J62 0805CS-220XMBC MMIC marking CODE c4
Text: SIEMENS GaAs MMIC CGY 120 Datasheet * Monolithic microwave IC MMIC-Amplifier for mobile communication * Variable gain amplifier for GSM/PCN applications * Gain Control range over 50dB * 50Q input and output matched * Low power consumption 'Operating voltage range: 2.7 to 6 V
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Q62702-G44
Vcon55
B37940-K5220-J62
siemens rs 1016
B37940K5220J62
B54102
mmic-amplifier
CGY120
B54102-A1471-J60
B37490-K5120-J62
0805CS-220XMBC
MMIC marking CODE c4
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F06300
Abstract: No abstract text available
Text: SMF-06310 ELECTRONICS Sam sung M icrow ave Sem iconductor G 3 Ì I 1 O p t ¡I T lÍ Z G C l Low Current GaAs FET 2-12 GHz Description Features The S M F-06310 is a packaged version of the SM F-06300. The chip is a 600 |im n-channel M E S F E T with 0.5 |im gate
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SMF-06310
F-06310
F-06300.
F-06300
F06300
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B54102
Abstract: dg s22 B37940-K5220-J62
Text: SIEMENS CGY 120 GaAs MMIC Datasheet * Monolithic microwave IC MMIC-Amplifier for mobile communication * Variable gain amplifier for GSM/PCN applications * Gain Control range over 50dB *5 0 i2 input and output matched * Low power consumption ‘ Operating voltage range: 2.7 to 6 V
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Q62702-G44
235b05
A23SbGS
CGY120
B54102
dg s22
B37940-K5220-J62
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siemens rs 1016
Abstract: 012E3
Text: SIEMENS CGY 120 GaAs MMIC • • • • • • • Monolithic microwave IC MMIC-Amplifier for mobile communication Variable gain amplifier for GSM/PCN applications Gain Control range over 50dB 50Q input and output matched Low power consumption Operating voltage range: 2.7 to 6 V
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Q62702-G44
235LD5
fl235b05
siemens rs 1016
012E3
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B37940-K5220-J62
Abstract: B54102 Siemens MMIC 0805CS-220XMBC siemens rs 1016 B37940K5220J62 SIEMENS gaas 0805CS-270XMBC Q62702-G44 marking code 02 mmic
Text: SIEMENS C G Y120 GaAs MMIC Datasheet * M onolithic microwave IC MMIC-Am plifier for mobile communication * Variable gain am plifier for GSM/PCN applications * Gain Control range over 50dB * 5 0 i l input and output matched * Low power consumption •O p eratin g voltage range: 2.7 to 6 V
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Q62702-G44
23SbOS
B37940-K5220-J62
B54102
Siemens MMIC
0805CS-220XMBC
siemens rs 1016
B37940K5220J62
SIEMENS gaas
0805CS-270XMBC
marking code 02 mmic
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siemens rs 1016
Abstract: B37940-K5220-J62 B54102 B3749 0805CS-270XMBC type pd21 0805CS-220XMBC Q62702-G44 Siemens MMIC
Text: CGY 120 GaAs MMIC Datasheet * Monolithic microwave IC MMIC-Amplifier for mobile communication * Variable gain amplifier for GSM/PCN applications * Gain Control range over 50dB
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Q62702-G44
PD21/Gü
siemens rs 1016
B37940-K5220-J62
B54102
B3749
0805CS-270XMBC
type pd21
0805CS-220XMBC
Q62702-G44
Siemens MMIC
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DIVIDE-BY-17
Abstract: No abstract text available
Text: GEC PLESSEY DS3653-1-2 SP8782A & B 1GHz 16/17, -5-32/33 MULTI-MODULUS DIVIDER The S P 8782 is a m u lti-m o d ulu s d ivid e r w hich d ivid e s by 16/17 w hen th e R atio S elect input is low and by 3 2 /3 3 w hen the R atio S e le ct inp u t is high. W h e n high, th e M o du lu s Control
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DS3653-1-2
SP8782A
8782B
DIVIDE-BY-17
SP8782B
37bflS22
DIVIDE-BY-17
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ETU45B
Abstract: ETU27B ETU76B
Text: 1 Siemens AG 2015 Air Circuit Breakers 1/2 Introduction 1/9 1/10 1/17 1/24 1/31 1/38 1/45 3WL air circuit breakers/ non-automatic air circuit breakers up to 6300 A AC , IEC Introduction 3-pole, fixed-mounted versions 3-pole, withdrawable versions 4-pole, fixed-mounted versions
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3KD2832-0NE10-0
ETU45B
ETU27B
ETU76B
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D30 DIAC
Abstract: D32 DIAC diac D30 TC9297F TC9297FB ak02
Text: TOSHIBA TC9297F/FB TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9297F, TC9297FB LCD DRIVER W ITH ON-CHIP KEY INPUT TC9297F/FB are an LCD driver 1C with on-chip key input, which is serial data controlled. FEATURES • Supports switching between 1/2 and 1/3 duty, and
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TC9297F/FB
TC9297F,
TC9297FB
TC9297F/FB
s36-s39
TC9297F
QFP60-P-1414-0
QFP64-P-1212-0
QFP60-P-1414-0instruments,
D30 DIAC
D32 DIAC
diac D30
TC9297F
TC9297FB
ak02
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TA0967A
Abstract: Fc-500
Text: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com SAW Filter 1561 MHz MODEL NO.:TA0967A REV. NO.:1
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TA0967A
TA0967A
Fc-500
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CFY 18
Abstract: HEMT marking D HEMT marking K VS005553
Text: SIEMENS AIGaAs / InGaAs HEMT CFY77 Datasheet Features * Very low noise •V ery high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters 4 * 2 VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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CFY77
VS005553
CFY77-08
CFY77-10
Q62702-F1549
Q62702-F1559
CFY 18
HEMT marking D
HEMT marking K
VS005553
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HEMT marking K
Abstract: marking t54 CFY 18 CFY77-08 CFY77-10 Q62702-F1549 Q62702-F1559 cfy 14 siemens marking code 51C HEMT
Text: SIEMENS AIGaAs / InGaAs HEMT CFY 77 D a t a s h e e t Features ‘ Very low noise ‘ Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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VS005553
CFY77-08
Q62702-F1549
CFY77-10
Q62702-F1559
chap18
S35bD5
HEMT marking K
marking t54
CFY 18
cfy 14 siemens
marking code 51C
HEMT
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Untitled
Abstract: No abstract text available
Text: FLM3742-8F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 39.5dBm Typ. • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 28.5dBm • Broad Band: 3.7 to 4.2GHz • Impedance Matched Zin/Zout = 50ohm
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FLM3742-8F
-46dBc
50ohm
FLM3742-8F
25deg
25atched
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Untitled
Abstract: No abstract text available
Text: FLM3742-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm Typ. • High Gain: G1dB = 10.5dB (Typ.) • High PAE: hadd = 41% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 3.7 to 4.2GHz • Impedance Matched Zin/Zout = 50ohm
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FLM3742-25F
-46dBc
50ohm
FLM3742-25F
25deg
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Untitled
Abstract: No abstract text available
Text: FLM5964-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm Typ. • High Gain: G1dB = 10.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 32.0dBm • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm
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FLM5964-18F
-46dBc
50ohm
FLM5964-18F
25deg
25datched
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Untitled
Abstract: No abstract text available
Text: FLM5053-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm Typ. • High Gain: G1dB = 8.5dB (Typ.) • High PAE: hadd = 35% (Typ.) • Low IM3 = -46dBc@Po = 32.0dBm • Broad Band: 5.0 to 5.3GHz • Impedance Matched Zin/Zout = 50ohm
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FLM5053-18F
-46dBc
50ohm
FLM5053-18F
25deg
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Untitled
Abstract: No abstract text available
Text: FLM5053-8F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 39.5dBm Typ. • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 36% (Typ.) • Low IM3 = -46dBc@Po = 28.5dBm • Broad Band: 5.0 to 5.3GHz • Impedance Matched Zin/Zout = 50ohm
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FLM5053-8F
-46dBc
50ohm
FLM5053-8F
25deg
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Untitled
Abstract: No abstract text available
Text: FLM5964-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm Typ. • High Gain: G1dB = 10.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm
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FLM5964-25F
-46dBc
50ohm
FLM5964-25F
25deg
25datched
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