LR7189
Abstract: No abstract text available
Text: blE AMP INCORPORATE» □ 7^7312 DG2fciG5S 03^ • Catalog 65359 Issued 8-92 Surface-Mount Receptacles (AMPMODU) Dimensioning: Dimensions are in inches and millimeters. Values in brackets are metric equivalents. Receptacle Assemblies Double Row, .100 x .100 [2.54 x 2.54] Centers
|
OCR Scan
|
0D2fci05S
E28476
LR7189
LR7189
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA ^ 0* 17 2 40 OOHfiSDM ñbO • - THM3640F5BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The THM3640F5BS/BSG is a 4,194,304 words by 36 bits Hyper Page Mode (EDO) dynamic RAM module which is assem
|
OCR Scan
|
THM3640F5BS/BSG-60/70
THM3640F5BS/BSG
TC5117405BSJ
TC5117445BSJ
DM16040595
THM3640F5BS/BSG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA cIOti7 2 4 a 0 0 2 ô b fl2 131 TC59R1809VK/HK PRELIMINARY 2,097,152 WORD x 9-BIT RAMBUS DYNAMIC RAM Description TheTC59R1809VK/HK Rambus Dynamic RAM RDRAM is a next-generation high-speed CMOS DRAM with a 2,097,152 x 9-bit organization and built-in slave logic. The 36,864 sense amps of the DRAM core are used as cache to achieve data
|
OCR Scan
|
TC59R1809VK/HK
TheTC59R1809VK/HK
500MB/S.
TC59R1809VK/HK
32-pin
RD18011195
SVP32-P-1125A)
SHP36-P-1125)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P D - 9.1268F International IQ R Rectifier IRF7506 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual P-Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching
|
OCR Scan
|
1268F
IRF7506
S5452
|
PDF
|
fll57
Abstract: No abstract text available
Text: Data Sheet October 1997 microelectronics group Lucent Technologies Bell Labs Innovations T7901 ISA Single Wide Area Connection ISA-SWAC Device Features • One wide area connection port that can be config ured as a basic rate ISDN TE or NT or as a syn
|
OCR Scan
|
T7901
SN74LS32)
SN74LS04)
T7901.
5002b
002fl25b
theT7901
CY7C199.
SN74LS174
fll57
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International S Rectifier Preliminary Data Sheet No. PD-6.102A IR2233 3-PHASE BRIDGE DRIVER Features Product Summary • Floating channel designed fo r bootstrap operation Fully operational to + 1200V Tolerant to negative transient voltage dV/dt im m une ■ G ate drive supply range from 10 to 20V
|
OCR Scan
|
IR2233
IR2233
047AC.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7SLU04F/FU INVERTER The TC7SLU04 is a low voltage operative C2MOS INVERTER fabricated with silicon gate C2MOS technology. Operating voltage VGc(0pr is 1 ~ 3V equivalent to 1 pc or 2pcs of dry cell battery and it achieves low power dissipation.
|
OCR Scan
|
TC7SLU04F/FU
TC7SLU04
DT724fl
|
PDF
|
Z80A CPU
Abstract: Z80A
Text: CPU Us e r ’s Manual <S*2iL0E Chapter 5 _ Z 8 0 In s t r u c t io n D e s c r ip t io n 5.0 INTRODUCTION: Z80 ASSEMBLY LANGUAGE The assembly language provides a means for writing a program without having to be concerned with actual
|
OCR Scan
|
1000H,
1000H
Z80A CPU
Z80A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M417800CJ,TP-5,-6,-7, -5S,-6S,-7S FAST PAGE MODE 16777216-BIT 2097152-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 2097152-w ord by 8-bit dynamic RAMs, fabricated with the high performance C M O S process, and is ideal
|
OCR Scan
|
M5M417800CJ
16777216-BIT
2097152-WORD
2097152-w
002flbaL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: i s E* C yi JULY 1996 ^ DS4580-1.4 ITC14407516D POWERLINE N-CHANNELIGBT CHIP TYPICAL KEY PARAMETERS 25’ C VCES 1600V 'c(co^) 75A V 3.3V * CE(sat) FEATURES • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed. ■ Latch-Free Operation.
|
OCR Scan
|
DS4580-1
ITC14407516D
37bfiSE2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P D - 9 .1 5 2 3 International IQR Rectifier PRELIMINARY IRF9530NS/L HEXFET Power MOSFET • • • • • • • Advanced Process Technology Surface Mount IRF9530NS Low-profile through-hole (IRF9530NL) 175°C Operating Temperature Fast Switching P-Channel
|
OCR Scan
|
IRF9530NS/L
IRF9530NS)
IRF9530NL)
7792C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P D - 9 .1 6 1 0 A International IO R Rectifier IRFR/U5505 PRELIMINARY HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR5505 • Straight Lead (IRFU5505) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated
|
OCR Scan
|
IRFR/U5505
IRFR5505)
IRFU5505)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IDT74FST163214 ADVANCE INFORMATION 12-BIT 3:1 MUX/DEMUX SWITCH Integrated Device Technology, Inc. The FST163214 belong to IDT's family of Bus switches. Bus switch devices perform the function of connecting or isolating two ports without providing any inherent current sink
|
OCR Scan
|
IDT74FST163214
12-BIT
FST163214
there3214
S056-1)
S056-2)
S056-3)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet September 1997 m i cro e le ctr o n ic s group Lucent Technologies Bell Labs Innovations LUC3M08 Eight Ethernet MACs for 10/100 Mbits/s Frame Switching Features • Eight 10/100 Mbits/s Ethernet MACs integrated together with separate transmit and receive port
|
OCR Scan
|
LUC3M08
10Base-T,
100Base-T4,
64-bit344
DS97-478LAN
DS96-124LAN)
05002b
002fl0b5
|
PDF
|
|
|
IRF9511
Abstract: irf9510
Text: P-CHANNEL POWER MOSFETS IRF9510/9511 FEATURES TO-220 • Lower R o s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
|
OCR Scan
|
IRF9510/9511
IRF9510
-100V
IRF9511
71bMma
002flt104
|
PDF
|
30BQ060
Abstract: 1/carrier 30bq060
Text: International 1 9 Rectifier P D - 2 .4 4 0 A 30BQ060 SCHOTTKY RECTIFIER 3 Amp Major Ratings and Characteristics Characteristics Rectangular waveform I f <a v V rrm Ifs m Vf @ tp = 5 |js sine @ 3.0Apk, Tj = 125°C Tj 30BQ060 Units 3.0 A 60 V 1200 A 0.52 V
|
OCR Scan
|
30BQ060
30BQ060
40HFL40S02
SS45E
1/carrier 30bq060
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P-CHANNEL POWER MOSFETS IRF9520/9521 FEATURES • L o w e r R ds o n • Im proved inductive ruggedness • Fast sw itching tim es • R u gge d polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Im proved high temperature reliability
|
OCR Scan
|
IRF9520/9521
IRF9520
-100V
IRF9521
7Tb4142
|
PDF
|
MCD195
Abstract: UHF POWER TRANSISTOR UHF POWER BLT53 MCD201
Text: bTE T> N AUER P H I L I P S / D I S C R E T E bbS3^3]i GQ2Ö744 Ö4fl M A P X tjciiiiwudUUCIOrS _Product speciricauon UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures
|
OCR Scan
|
GQ2A744
BLT53
OT122D
MCD199
MCD201
MCD195
UHF POWER TRANSISTOR
UHF POWER
BLT53
MCD201
|
PDF
|
Untitled
Abstract: No abstract text available
Text: m 'iD,i754fi DD2fi73C1 C141 m- TOSHIBA TC59R0808HK PRELIMINARY 1,048,576 WORD x 8 BITS RAMBUS DYNAMIC RAM Description The TC59R0808HK Rambus Dynamic RAM DRAM is a next-generation high-speed CMOS DRAM with a 1,048,576 x 8 bits organization and built-in slave logic. The 16,384 sense amps of the DRAM core are used as cache to achieve data
|
OCR Scan
|
TC59R0808HK
TC59R0808HK
500MB/s.
RD0S010496
SHP36-P-1125)
|
PDF
|
JQC - 3F -1C
Abstract: D02fc DSASL TC8563 hard disk toshiba
Text: TOSHIBA UC/UP b4E J> • ^0=1724^ Q02b43B 3bS m i O Z 3 HARD DISK CONTROLLER | | TC8561F l TENTATIVE Hard Disk Controller 1. GENERAL DESCRIPTION The T C 8 5 6 1 F (HDC) is a h igh efficiency 108 73 h a rd d isk c o n tro lle r w ith a b u ilt-in d is k controller, sy stem in terface, b u ffe r m em ory
|
OCR Scan
|
Q02b43B
TC8561F
506/E
QFP144-P-2626
TC8561F
TC8561Fisas
QFP144
TC8561F-90
JQC - 3F -1C
D02fc
DSASL
TC8563
hard disk toshiba
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 5Ë GEC P L E S S E Y S E M I C O N D U C T O R S e p te m b e r 1996 S DS4219-2.3 DFB54 FAST RECOVERY DIODE KEY PARAMETERS V RRM 3500V 2135A Jf AV 20000A FSM 1500|lC Qr APPLICATIONS • Power Supplies. ■ Freewheel Diode. ■ Battery Chargers. ■ D.C. Motor Control.
|
OCR Scan
|
DS4219-2
DFB54
0000A
FB5435
FB5434
FB5433
FB5432
FB5431
FB5430
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRF720/721 FEATURES • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
|
OCR Scan
|
IRF720/721
IRF720
IRF721
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HITACHI/ <NCU/HPU 5DE » • MMTbSDM GGSTTÔT M? 5 ■ H I T 3 Section 1 Overview 1.1 Features The H8/520 is an original Hitachi CMOS microcomputer unit MCU) comprising a high-performance CPU core plus a full range of supporting functions—an entire system integrated onto a single chip.
|
OCR Scan
|
H8/520
16-bit
DC-64S
DP-64S
FP-64A
CP-68
DC-64S)
DP-64S)
FP-64A)
|
PDF
|
IRF720
Abstract: K020 250M IRF721 721 diode
Text: N-CHANNEL POWER MOSFETS IRF720/721 FEATURES • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
|
OCR Scan
|
IRF720/721
IRF720
IRF721
K020
250M
721 diode
|
PDF
|
