Untitled
Abstract: No abstract text available
Text: HD30 • HD40 ADP I SRAM o 5 Volt x8 Dual-Port Static RAM Memory Configuration Device 1K x 8 HD30 1K x 8 HD40 Key Features: • • • • • • • • • Industry leading Dual-Port Static RAM up to 15ns Simultaneous memory access through two ports 5V power supply
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IDT7130,
IDT7140)
CY7C130,
CY7C140)
HD30L15PF
5HD087
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Untitled
Abstract: No abstract text available
Text: P54/74FCT543/A P54/74PCT543/A P54/74FCT544/A (P54/74PCT544/A) OCTAL REGISTERED TRANSCEIVER FEATURES • Function, Pinout, and Drive Compatible with the FCT and F Logic Outputs Meet Levels Required for CMOS Static RAM Low Power Standby Mode ■ FCT-A speed at 6.5ns max. (Com'l)
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P54/74FCT543/A
P54/74PCT543/A)
P54/74FCT544/A
P54/74PCT544/A)
MIL-STD-883,
AE1820-3
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Untitled
Abstract: No abstract text available
Text: P54/74PCT245/A—P54/74PCT545/A—P54/74PCT645/A OCTAL BIDIRECTIONAL TRANSCEIVERS WITH 3-STATE OUTPUTS FEATURES • Function, Pinout, Speed and Drive Compatible with the Fastest Bipolar Logic 64 mA Sink Current A & B Outputs Com’l , 48 mA (Mil) ■ “A” Versions for High Performance
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P54/74PCT245/Aâ
P54/74PCT545/Aâ
P54/74PCT645/A
PCT245/A,
PCT545/A,
PCT645/Acontain
PCT645/A
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Untitled
Abstract: No abstract text available
Text: P54/74FCT543/A P54/74PCT543/A P54/74FCT544/A (P54/74PCT544/A) OCTAL REGISTERED TRANSCEIVER ¿ 4- FEATURES • Function, Pinout, and Drive Compatible with the FCT and F Logic
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P54/74FCT543/A
P54/74PCT543/A)
P54/74FCT544/A
P54/74PCT544/A)
Mll-STD-883,
AE1S20-3
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 256K X HYB 514171BJ-50/-60/-70 16-Bit Dynamic RAM HYB 514171BJL-50/-60/-70 Low Power 256K x 16-Bit Dynamic RAM with Self Refresh Advanced Information Low Power dissipation max. 1045 mW active -50 version max. 935 mW active (-60 version) max. 880 mW active (-70 version)
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514171BJ-50/-60/-70
16-Bit
514171BJL-50/-60/-70
16-Bit
235L05
HYB514171BJ/BJ
L-50/-60/-70
16-DRAM
fl23SbO
HYB514171BJ/BJL-50/-60/-70
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511000B/BL-60
Abstract: hyb 511
Text: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 5110OOB/BJ/BZ-60/-70/-80 HYB 511000BUBJL/BZL-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60
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5110OOB/BJ/BZ-60/-70/-80
511000BUBJL/BZL-60/-70
511000B/BL-60)
511000B/BL-70)
511000B-80)
511000B/BL-60
hyb 511
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511000B-80
Abstract: hyb511000B 511000B/BL-70
Text: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000B/BJ/BZ-60/-70/-80 HYB 511000BL/BJL/BZL-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60
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511000B/BJ/BZ-60/-70/-80
511000BL/BJL/BZL-60/-70
511000B/BL-60)
511000B/BL-70)
511000B-80)
511000B-80
hyb511000B
511000B/BL-70
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j78 transistor
Abstract: F909 t7gc transistor F909 s659
Text: <>=2834&?2+2&.@44+ A4 0/20B&C''C !"#$%&"'& )*+,-,&./01234567/8+&9:;5%:<&!434*=40 ?4,30*D+*78 %59#Q=TU%#89:93F98#3)6948(69-#(#=>#@;36-A-#+&,#()*# %&'#3)6H#(#68.9#-.8I(:97EH.)6#/(:V(49"#&6#3-#/(86#HI# # -6()*(8*3[9#-.8I(:97EH.)6#=>#@;36-A-#89:93F98-"#
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Original
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0/20B
93F98
-681W-
I38-6
063-H
4899E9
93F98-"
93F98-#
-363F361
HF980H(
j78 transistor
F909
t7gc
transistor F909
s659
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PDF
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HM538253B
Abstract: HM538253BJ-10 HM538253BJ-7 HM538253BJ-8 HM538254B HM538254BJ-7 HM538254BJ-8 TMS34020 Hitachi DSA0015
Text: HM538253B Series HM538254B Series 262,144-word x 8-bit Multiport CMOS Video RAM Description The HM538253B/HM538254B is a 2-Mbit multiport video RAM equipped with a 256-kword × 8-bit dynamic RAM and a 512-word × 8-bit SAM full-sized SAM . Its RAM and SAM operate independently and
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HM538253B
HM538254B
144-word
HM538253B/HM538254B
256-kword
512-word
HM534253B/HM538123B
HM538253B/HM538254B
HM538253BJ-10
HM538253BJ-7
HM538253BJ-8
HM538254BJ-7
HM538254BJ-8
TMS34020
Hitachi DSA0015
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PDF
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HM538253BTT-7
Abstract: Hitachi DSA00776 HM538253B HM538253BJ-10 HM538253BJ-7 HM538253BJ-8 HM538254B HM538254BJ-7 HM538254BJ-8 TMS34020
Text: HM538253B Series HM538254B Series 262,144-word x 8-bit Multiport CMOS Video RAM Rev. 0.0 Dec. 1, 1995 Description The HM538253B/HM538254B is a 2-Mbit multiport video RAM equipped with a 256-kword × 8-bit dynamic RAM and a 512-word × 8-bit SAM full-sized SAM . Its RAM and SAM operate independently
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HM538253B
HM538254B
144-word
HM538253B/HM538254B
256-kword
512-word
HM534253B/HM538123B
HM538253BTT-7
Hitachi DSA00776
HM538253BJ-10
HM538253BJ-7
HM538253BJ-8
HM538254BJ-7
HM538254BJ-8
TMS34020
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PDF
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c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
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siemens hyb514171BJ
Abstract: No abstract text available
Text: SIEMENS 256K X 16-Bit Dynamic RAM HYB 514171BJ-50/-60/-70 Low Power 256K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-50/-60/-70 Advanced Information 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time
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16-Bit
514171BJ-50/-60/-70
514171BJL-50/-60/-70
HYB514171BJ/BJL-50/-60/-70
16-DRAM
P-SOJ-40-1
BilAI40x
siemens hyb514171BJ
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ST 9221
Abstract: No abstract text available
Text: DATE SYM REVISION RECORD 5 / 5 /O C - IS S U E D RECOMMENDED MOUNTING HOLE . 0 6 4 + 0 . 0 0 2 MATERIAL: , 0 0 0 3 ” MIN. P AR T NUMBER: 1 0 -922-1 -0 5 1 0-922-2 -0 5 1 0-922-3 -0 5 1 0-922-4 -0 5 bJ e = |= □o J = b =oJ 1 /2 HARD E LE C TR O- SO L DER
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Untitled
Abstract: No abstract text available
Text: 245A Eg]Semiconductor National ÆM 54FCT/74FCT245A Octal Bidirectional Transceiver with TRI-STATE Inputs/Outputs General Description Features The 'FCT245A contains eight non-inverting bidirectional buffers with TRI-STATE outputs and is intended for bus-ori
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54FCT/74FCT245A
FCT245A
54/74FCT245A
54/74FCT245A
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siemens EM 235 cn
Abstract: No abstract text available
Text: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 Advanced Information VBB • 262 144 words by 4-bit organization • Single + 5 V ± 10 % supply with a built-in generator Output unlatched at cycle end allows two_
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514256B/BJ-50/-60/-70
514256BL/BJL-50/-60/-70
siemens EM 235 cn
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74fct245
Abstract: No abstract text available
Text: NATIONAL SEMICOND LOGIC blE ]> • bS01125 0D7S371 H3*) m CM EHNational t - s* - ? * * / ÆM Semiconductor 54FCT/74FCT245 Octal Bidirectional Transceiver with TRI-STATE Inputs/Outputs General Description Features The 'FCT245 contains eight non-inverting bidirectional buff
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bS01125
0D7S371
54FCT/74FCT245
FCT245
74FCT245
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HM538253BTT-7
Abstract: HM534253B DTH circuit diagram HM538253B HM538253BJ-10 HM538253BJ-7 HM538253BJ-8 HM538254B TMS34020 ct rac 70
Text: 2 M VRAM 256-kword x 8-bit Hyper Page Mode (HM538254B) LP EO Description HM538253B Series HM538254B Series E0163H10 (Ver. 1.0) (Previous ADE-203-264A/265 (Z) Jul. 6, 2001 (K) Features ro The HM538253B/HM538254B is a 2-Mbit multiport video RAM equipped with a 256-kword × 8-bit dynamic
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256-kword
HM538254B)
HM538253B
HM538254B
E0163H10
ADE-203-264A/265
HM538253B/HM538254B
512-word
HM538253BTT-7
HM534253B
DTH circuit diagram
HM538253BJ-10
HM538253BJ-7
HM538253BJ-8
TMS34020
ct rac 70
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PDF
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TC514266
Abstract: No abstract text available
Text: PRELIMINARY 2 6 2 , 1 4 4 \ vCi <L- k 4 i ' T' L ; Y ' ; a !V":C ?, a w ! D ESC RIPTIO N T he "I C i i i -T 7. b i: * .„h? new g ^ r.crau o n dynam ic HAM organized 262,144 words by 4 bits. T he TC51.4-r;i-!BP.BJ,'BZ.“siF;' .• 1 : > TOSHIBA'S CMOS Silicon gate process technology as well as
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14266BP/BJ/BZ/BFT
TC514266
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PDF
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OB35
Abstract: 511000BZ-60 BL-70 bzl60
Text: S IE M E N S 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000B/BJ/BZ-60/-70/-80 HYB 511000BL/BJL/BZL-60/-70 Advanced Inform ation • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60
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511000B/BJ/BZ-60/-70/-80
511000BL/BJL/BZL-60/-70
511000B/BL-60)
511000B/BL-70)
511000B-80)
OB35
511000BZ-60
BL-70
bzl60
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PDF
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P5501
Abstract: No abstract text available
Text: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 A d v a n c e d In fo rm a tio n 2 62 144 w o rd s by 4 -b it o rg a n iz a tio n S in g le + 5 V ± 10 % su p p ly w ith a bu ilt-in f 'BB
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514256B/BJ-50/-60/-70
514256BL/BJL-50/-60/-70
P5501
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PDF
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T9GO
Abstract: T9G01200A 50A 450V SCR LT 428 T9GO 14 BP107 P-149 P-152
Text: MME7ZEX T9G0 1200A Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 P hâS B Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 A ' ' C o tltto l S C R M 1200 Amperes Average 2400 Volts
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BP107,
000/I
T9G01200A
T9G01200A
P-152
T9GO
50A 450V SCR
LT 428
T9GO 14
BP107
P-149
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PDF
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Untitled
Abstract: No abstract text available
Text: P54/74FCT543T/AT/CT P54/74FCT544T/AT/CT OCTAL REGISTERED TRANSCEIVER FEATURES Function, Pinout and Drive Compatible with the FCT and F Logic Power-off disable feature FCT-C speed at 5.3ns max. Com'l FCT-A speed at 6.5ns max. (Com'l) Fully Compatible with TTL Input and Output
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P54/74FCT543T/AT/CT
P54/74FCT544T/AT/CT
543AT
544AT
AE1733-5
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PDF
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025339
Abstract: LT 428 BP107 T820 PGM-16
Text: T820 900A WHUERBC Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Phase Control SCR 900 Amperes Average 1600 Volts T820 900A Phase Control SCR
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BP107,
020/i
1T820-90|
025339
LT 428
BP107
T820
PGM-16
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PDF
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Untitled
Abstract: No abstract text available
Text: AC Line EMI Suppression and RC Networks PHE820E Series Metallized Polyester Film, Class X2, 300 VAC Overview Applications The PHE820E Series is constructed of series winding of metallized polyester encapsulated in self-extinguishing material meeting the requirements of UL 94 V–0.
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PHE820E
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