shd2187
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD218507 SHD218507A SHD218507B TECHNICAL DATA DATA SHEET 4064, REV. Formerly part number SHD2187 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 900 Volt, 1.6-Ohm, 6.7A MOSFET Hermetic Package Fast Switching Low RDS on MAXIMUM RATINGS
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SHD2187
SHD218507
SHD218507A
SHD218507B
shd2187
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SHD218507
Abstract: SHD218507A SHD218507B SHD2187
Text: SHD218507 SHD218507A SHD218507B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4064, REV. Formerly part number SHD2187 HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 900 Volt, 1.6-Ohm, 6.7A MOSFET • • • Hermetic Package Fast Switching Low RDS on
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SHD218507
SHD218507A
SHD218507B
SHD2187
SHD218507
SHD218507A
SHD218507B
SHD2187
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PDF
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD218507 SHD218507A SHD218507B TECHNICAL DATA DATA SHEET 4064, REV. Formerly part number SHD2187 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 900 Volt, 1.6-Ohm, 6.7A MOSFET Hermetic Package Fast Switching Low RDS on MAXIMUM RATINGS
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SHD2187
SHD218507
SHD218507A
SHD218507B
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Untitled
Abstract: No abstract text available
Text: URF25P82E5 URW25P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 306 Ω KF 504 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig RG/VQ473 • Rgtkqfke"cxcncpejg"tcvgf RG/VQ474 •"Gzvtgog"fx1fv"tcvgf • Jkij"rgcm"ewttgpv"ecrcdknkv{
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URF25P82E5
URW25P82E5
RG/VQ473
RG/VQ474
S89262/U6643
25P82E5
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PDF
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yd 803
Abstract: yd 803 rohs sed1181 yd 803 pinout tdfr 30 Pinout panel lcd AC 152 VI COM55 COM56 COM63
Text: SED1191 CMOS LCD 64-COMMON DRIVER • DESCRIPTION The SED1191 is a dot matrix LCD common row driver for driving high-capacity LCD panel at duty cycles higher than 1/64. The LSI uses two serially connected, 32-bit shift registers to hold the display data, and level
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SED1191
64-COMMON
SED1191
32-bit
64-bit
SED1181
yd 803
yd 803 rohs
sed1181
yd 803 pinout
tdfr
30 Pinout panel lcd
AC 152 VI
COM55
COM56
COM63
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PDF
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Untitled
Abstract: No abstract text available
Text: URY37P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 204: Ω KF 37 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig RG/VQ469 • Rgtkqfke"cxcncpejg"tcvgf •"Gzvtgog"fx1fv"tcvgf • Wnvtc"nqy"ghhgevkxg"ecrcekvcpegu
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URY37P82E5
RG/VQ469
S89262/U6826
37P82E5
009-134-A
O-247
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PDF
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44e 402
Abstract: No abstract text available
Text: CSD01060–Silicon Carbide Schottky Diode Zero Recovery Rectifier Features • • • • • • • VRRM = 600V IF = 1A Qc = 3.3 Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior
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CSD01060â
O-252-2
O-220-2
CSD01060
44e 402
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CSD01060
Abstract: CSD01060A CSD01060E SD01060
Text: POWER PRELIMINARY CSD01060 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency
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CSD01060
286TYP
31TYP
CSD01060A
CSD01060E
O-220-2
O-252-2
SD01060
CSD01060
CSD01060A
CSD01060E
SD01060
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CSD01060 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency
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CSD01060
CSD01060A
CSD01060E
CSD01060,
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CSD01060 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency
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CSD01060
CSD01060,
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CSD01060
Abstract: CSD01060A CSD01060E SD01060
Text: PRELIMINARY CSD01060 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency
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CSD01060
CSD01060,
CSD01060
CSD01060A
CSD01060E
SD01060
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PDF
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Untitled
Abstract: No abstract text available
Text: CSD01060 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=600V IF=1A _ Features Benefits • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery
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Original
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CSD01060
CSD01060A
CSD01060E
CSD01060,
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CSD01060 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency
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Original
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CSD01060
CSD01060,
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PDF
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Untitled
Abstract: No abstract text available
Text: POWER ® PRELIMINARY CSD04060 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency
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CSD04060
31TYP
CSD04060A
CSD04060B
CSD04060E
O-220-2
O-220-3
O-252-2
SD04060
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1S697
Abstract: BP107 C702 C702LD C782 SCR 6 pulse Gate Drive
Text: POüJEREX INC J S Q H " E Æ B ^ DE~| T E ^ b E l 00D3D70 S | T '-*5'-*/'" C702 t Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15897 412 925-7272 Powerex Europe, S.A., 428 Ave. Q. Durand, BP107, 72003 LeUana, France (43) 72.75.15 P tlB S G C O t l t t O l S C R
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OCR Scan
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BP107,
Amperes/2300-3200
1S697
BP107
C702
C702LD
C782
SCR 6 pulse Gate Drive
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PDF
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sfnf101b
Abstract: No abstract text available
Text: SOLITRON DEVICES INC 70 DE J f i 3 b f l t i D E MAXIMUM RATINGS UNITS Voltage, Drain to Source 80 V Drain Current, Continuous @ Tc*=25°C 1 .5 A Drain Current, Pulsed 4.5 A Voltage, Gate-to-Source -20 V Power Dissipation @ Tc»25°C 6.25 W Drain Current, Clamped Inductive
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OCR Scan
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SFNF101B
5M6-24UNF-2A
P06fTKMOF
eA03AT
sfnf101b
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SFN252
Abstract: T-39
Text: 8368602 SOLITRON DEVICES 7D INC »E|B3batoa DDGEGS3 D | T-39-13 70c 02053 SWITCH MOS N SFN252 POWER MOS PACKAGE TO-3 MAXIMUM RATINGS • VDS IDM VGS PD *L TJ oper T „ stg Voltage, Drain to Source 100 Voltage, Gate-to-Source Ì 20 Power Dissipation @ Tc«25°C
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OCR Scan
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T-39-13
000EDS3
SFN252
250uA
1J4-28UNF-ZA
5M6-24UNF-2A
050-MAX.
SFN252
T-39
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sfn151
Abstract: No abstract text available
Text: 8368602 SOLITRON DEVICES INC SFN151 70C 02020 SWITCH MOS PACKAGE TO -3 D T-39-13 ï>F|fl3 bûL.oE □□□sded 7 | ~ POWER MOS MAXIMUM RATINGS VDS XD IDM VGS PD *L ^J oper T stg UNITS PARAMETER SYMBOL 60 Drain Current, Continuous @ Tc=25°C 40 Drain Current, Pulsed
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OCR Scan
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T-39-13
SFN151
5M6-24UNF-2A
P06fTKM
eA03AT
sfn151
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sfnf105c
Abstract: No abstract text available
Text: 8368602 SOL ITRON DEVICES INC 7 0 D e | fl3L,flt,05 0005001 3 | t ;39-09 SWITCH MOS SFNF105C POWER MOS MAXIMUM IDM • VGS PD *L TJ óper T „ stg UNITS Voltage, Drain to Source 100 V Drain Current, Continuous @ T =25°C ’ c Drain Current, Pulsed 4.0
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SFNF105C
5M6-24UNF-2A
P06fTKM
eA03AT
sfnf105c
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PDF
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SFN223
Abstract: T-39
Text: 8368602 SOLITRON DEVICES SFN223 INC 70C 0 2 0 4 6 D T^ m I SWITCH MOS PACKAGE TO-3 POWER MOS MAXIMUM RATINGS VDS *D IDM VGS PD *L Tj oper stg UNITS PARAMETER SYMBOL Voltage, Drain to Source 150 V Drain Current, Continuous @ Tc*25°C 4.0 A Drain Current, Pulsed
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OCR Scan
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t-39-11
SFN223
250uA
1J4-28UNF-ZA
5M6-24UNF-2A
050-MAX.
T-39
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PDF
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SFN105B
Abstract: T-39 sfn105
Text: 8368602 SOLITRON DEVICES SFN105B INC 70C SWITCH MOS PACKAGE TO-3 70 » E | s 3 t a t D a Voltage, Drain to Source 80 Drain Current, Continuous @ Tc=25°C 5.0 TJ oper T Stg bvdss XDSS Junction Operating Temperature 20 -55 to +150 Storage Temperature -55 to +150
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OCR Scan
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SFN105B
-25WC
250uA
1J4-28UNF-ZA
5M6-24UNF-2A
050-MAX.
T-39
sfn105
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PDF
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SFN221
Abstract: T-39
Text: 8368602 SOL ITRON D E V I C E S SFN221 INC 70C 0 2 0 4 4 SWITCH MOS PACKAGE TO-3 7“ D^ n a3t^ D E T-39-11 ooosim a |~ POWER M O S MAXIMUM RATINGS IDM VGS PD IL Tj oper T . 8tg Drain Current, Continuous * Drain Current, Pulsed @ Tc*25°C IDSS r d s (on)
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OCR Scan
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T-39-11
SFN221
1J4-28UNF-ZA
5M6-24UNF-2A
050-MAX.
T-39
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PDF
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sfns061
Abstract: No abstract text available
Text: SOLITRON DEVICES INC 70 SWITCH MOS SFNS061B POWER M O S PACKAGE TO-52 MAXIMUM XD IDM PD *L TJ oper T stg UNITS . Voltage, Drain to Source Drain Current, Continuous @ T =25°C c Drain Current, Pulsed Voltage, Gate-to-Source Power Dissipation @ Tc=25°C
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OCR Scan
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SFNS061B
5M6-24UNF-2A
P06fTKM
eA03AT
sfns061
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PDF
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BUL 512 HI
Abstract: SFN451 T-39
Text: 8368602 SOLITRON DEVICES INC SFN451 70C 02088 SWITCH MOS PACKAGE TO-3 7 Ü o D E T-39-13 f l 3 I b f l t . D E □ □ □ a ü f l f l fl POWER MOS MAXIMUM RATINGS SYMBOL VDS *D ZDM VGS PD *L TJ oper T stg UNITS PARAMETER Voltage, Drain to Source 450 -
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OCR Scan
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T-39-13
SFN451
1J4-28UNF-ZA
5M6-24UNF-2A
050-MAX.
BUL 512 HI
T-39
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PDF
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