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    DIE CHIP 51 Search Results

    DIE CHIP 51 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    DIE CHIP 51 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M36P0R9070E0

    Abstract: M58PR512J M69KB128AB
    Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM


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    PDF M36P0R9070E0 128Mbit TFBGA107 108MHz, 66MHz M36P0R9070E0 M58PR512J M69KB128AB

    23LIST

    Abstract: No abstract text available
    Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM


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    PDF M36P0R9070E0 128Mbit TFBGA107 M36P0R9070E0ZAQF M36P0R9070E0 23LIST

    M36P0R9070E0

    Abstract: M58PR512J M69KB128AB
    Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM


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    PDF M36P0R9070E0 128Mbit TFBGA107 108MHz, 66MHz M36P0R9070E0 M58PR512J M69KB128AB

    cfi commands

    Abstract: A0-A21 J-STD-020B M36W0R6030B0 M36W0R6030T0
    Text: M36W0R6030T0 M36W0R6030B0 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 8 Mbit SRAM • SUPPLY VOLTAGE – VDDF = VDDQ = VDDS = 1.7 to 1.95V


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    PDF M36W0R6030T0 M36W0R6030B0 512Kb 8810h 8811h cfi commands A0-A21 J-STD-020B M36W0R6030B0 M36W0R6030T0

    infineon c167 bare die

    Abstract: C167CR-LC AN10 AN11 AN12 C166 C167CR SAK-C167CR-LC c167 bare die 4536 timer circuits
    Text: Microcontrollers C166 Family 16-Bit Single-Chip Microcontroller C167CR-LC, Bare Die, Step FA Data Sheet 1999-11 Bare Die Delivery www.infineon.com C167CR-LC Step FA C167CR-LC Revision History: (Bare Die Delivery) 1999-11, Step FA Previous Versions: 10.97


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    PDF 16-Bit C167CR-LC, C167CR-LC C167CR infineon c167 bare die C167CR-LC AN10 AN11 AN12 C166 SAK-C167CR-LC c167 bare die 4536 timer circuits

    ZU 107

    Abstract: 10BaseS visteon zu107
    Text: high-tech vom feinsten High-Tech vom Feinsten system-on-a-chip: klein aber oho die herausforderung die position von infineon Früher wurden die verschiedensten Kommunikations- und Rechenvorgänge meist von mehreren Halbleiter-Bauelementen parallel ausgeführt. Mittlerweile werden


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    infineon c167 bare die

    Abstract: ba 4614 4614 Ba 4164 ram bosch ac drive AN10 AN11 C166 C167CR SAK-C167CR-4RC
    Text: Microcontrollers C166 Family 16-Bit Single-Chip Microcontroller C167CR-xC, Bare Die, Step GA Data Sheet 1999-11 Bare Die Delivery www.infineon.com C167CR-xC Step GA C167CR-xC Revision History: (Bare Die Delivery) 1999-11, Step GA Previous Versions: 1999-11


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    PDF 16-Bit C167CR-xC, C167CR-xC C167CR infineon c167 bare die ba 4614 4614 Ba 4164 ram bosch ac drive AN10 AN11 C166 SAK-C167CR-4RC

    actel package mechanical drawing

    Abstract: CC256 antifuse programming technology AC193 CERAMIC QUAD FLATPACK CQFP antifuse CQ208 CQFP 256 PIN actel
    Text: Application Note AC193 Ceramic Chip Carrier Land Grid CC256 Package Handling Introduction Die-level solutions allow for the integration of differing technologies or products from multiple companies, all on the same board or multi-chip module. Die that can be tritemp tested or screened, also


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    PDF AC193 CC256) CC256 actel package mechanical drawing antifuse programming technology AC193 CERAMIC QUAD FLATPACK CQFP antifuse CQ208 CQFP 256 PIN actel

    me 4946

    Abstract: SAK-C167CR-LC c167 bare die 7313 28 pin integrated circuit BOSCH bosch ac drive AN10 AN11 C167CR-LC
    Text: Microcomputer Components 16-Bit CMOS Single-Chip Microcontroller Bare Die, Step BA C167CR/C167SR-LC Data Sheet 05.97 Bare Die Delivery C167CR-LC/C167SR-LC Revision History: (Bare Die Delivery) Original Version 05.97 Previous Releases: - Page Subjects Controller Area Network (CAN): License of Robert Bosch GmbH


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    PDF 16-Bit C167CR/C167SR-LC C167CR-LC/C167SR-LC D-81541 C167xR-LC 07May97 me 4946 SAK-C167CR-LC c167 bare die 7313 28 pin integrated circuit BOSCH bosch ac drive AN10 AN11 C167CR-LC

    SAMSUNG MCP

    Abstract: MCP NAND
    Text: Preliminary MCP MEMORY K5P2881BCM Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit (512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. - 128M NAND Flash C-die - 8M SRAM B-die


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    PDF K5P2881BCM 16Mx8) 512Kx16) 69-Ball SAMSUNG MCP MCP NAND

    Silicon Microstructures

    Abstract: MEDICAL PRESSURE die SM5102 OEM PRESSURE SILICON DIE
    Text: SM5102 SILICON MICROSTRUCTURES INCORPORATED • OEM Silicon Pressure Die OEM SILICON PRESSURE SENSOR DIE DESCRIPTION Compensated The SM5102 is a silicon micro-machined, piezoresistive pressure-sensing chip. These devices are available in full-scale ranges


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    PDF SM5102 SM5102 Silicon Microstructures MEDICAL PRESSURE die OEM PRESSURE SILICON DIE

    CPD05

    Abstract: 1N4001 1N3611 1N3614 1N4007 1N4245 1N4249 1N5059 1N5062 1N5391
    Text: PROCESS CPD05 General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 51 x 51 MILS Die Thickness 10.2 MILS Anode Bonding Pad Area 36 x 36 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization


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    PDF CPD05 1N3611 1N3614 1N4001 1N4007 1N4245 1N4249 1N5059 1N5062 1N5391 CPD05 1N3614 1N4007 1N4249 1N5062

    BSW68

    Abstract: AG TRANSISTOR BUY49S CP349 chip die npn transistor
    Text: PROCESS CP349 Power Transistor NPN- High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 51 x 51 MILS Die Thickness 9.1 MILS Base Bonding Pad Area 7.9 x 15.7 MILS Emitter Bonding Pad Area 7.9 x 15.7 MILS Top Side Metalization Al - 30,000Å


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    PDF CP349 BUY49S BSW68 BSW68 AG TRANSISTOR BUY49S CP349 chip die npn transistor

    CPD24

    Abstract: datasheet 1N4937 1N4933 1N4937 1N4942 1N4948 1N5615 1N5623 CMR1F-02M DIE CHIP 51
    Text: PROCESS CPD24 Fast Recovery Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 51 x 51 MILS Die Thickness 11 MILS Anode Bonding Pad Area 35 x 35 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization


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    PDF CPD24 1N4933 1N4937 1N4942 1N4948 1N5615 1N5623 CMR1F-02M 29-April CPD24 datasheet 1N4937 1N4937 1N4948 1N5623 DIE CHIP 51

    80C166

    Abstract: SAB80C166
    Text: EVA16A Application Note SAB80C166 Speichererweiterung durch MemoryBanking Seit Jahren ist der Siemens Mikrocontroller SAB80C166 auf dem Markt verfügbar. Durch die extrem schnelle CPU und die zahlreichen on-chip verfügbaren Peripheriefunktionen eignet sich der SAB80C166 hervorragend für fast alle


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    PDF EVA16A SAB80C166 256KByte. 80C166

    Silicon Microstructures

    Abstract: SM5106 tire pressure sensor low PRESSURE die
    Text: SM5106 SILICON MICROSTRUCTURES INCORPORATED • Low Cost OEM Pressure Die Small, Low Cost OEM Pressure Die DESCRIPTION The SM5106 is a very small 1.56mm x 1.56mm silicon micromachined piezoresistive pressure sensing chip that has been optimized to provide the highest


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    PDF SM5106 SM5106 Silicon Microstructures tire pressure sensor low PRESSURE die

    nor flash 1.8V

    Abstract: PSRAM M36P0R9060E0 M58PR512J
    Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


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    PDF M36P0R9060E0 TFBGA107 108MHz, 66MHz nor flash 1.8V PSRAM M36P0R9060E0 M58PR512J

    Untitled

    Abstract: No abstract text available
    Text: BRIDGELUX BLUE POWER DIE BXFE 45 x 45 PRODUCT DATA SHEET DS-C18 The Bridgelux family of blue power die enables high performance and cost effective solutions to serve solid state lighting market. This next generation chip technology delivers improved efficiency and


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    PDF DS-C18

    BL51

    Abstract: G100 P89C660 P89C668
    Text: phyCORE-P89C668 QuickStart Instructions Using PHYTEC FlashToolsOCF for on-chip Flash and the µVision2 Software Evaluation Development Tool Chain Note: The PHYTEC Spectrum CD includes the electronic version of the phyCORE-P89C66x English Hardware Manual Hinweis: Die PHYTEC Spectrum CD beinhaltet die elektronische


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    PDF phyCORE-P89C668 phyCORE-P89C66x phyCORE-P89C668 L-562e D-55135 BL51 G100 P89C660 P89C668

    PSRAM

    Abstract: M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ
    Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


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    PDF M36P0R9060E0 TFBGA107 108MHz, 66MHz PSRAM M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ

    Untitled

    Abstract: No abstract text available
    Text: Chip Mounting and Handling of GaAs MMIC Chips CHIP DIE DOWN BONDING TECHNIQUES Die Attach The important considerations for die attach are to have low thermal resistance, strong mechanical bond over the desired temperature range, and no damage occurring to the chip


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    IRF540

    Abstract: IRF540CHIP
    Text: SGS-THOMSON itl ¥»HD S IRF540 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 170x170 mils METALLIZATION: Top Al Back Au/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:


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    PDF IRF540 170x170 15x18 MC-0075 IRF540CHIP

    low PRESSURE die

    Abstract: No abstract text available
    Text: OEM Pressure Silicon Die Model 5102 Description The 5102 is a silicon micro­ machined, piezoresistive pressure sensing chip. These devices are available in full-scale ranges from 5 to 300 PSI and are ideal for OEM and high volume applications. Provided in die form, these sensors


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    PT 2102 ic

    Abstract: HXTR-41Q1 HXTR-4101TXV 2N6679 HPAC-70GT HXTR-2101 HXTR-4101 hxtr-6105 6105tx BV EI 302 2003
    Text: H E W L E T T - P A C K A R D n CMPNTS EOE D £3 44475Û4 m General Purpose Transistors HXTR-2001 Chip Technical Data Features ^ k laert ; LJ Generic Chip HXTR-2001 Recommended Die Attach and Bonding Procedures Eutectic Die Attach at a stage temperature of 410 ± 10°C under


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    PDF HXTR-2001 2N6679, HXTR-2101, HXTR-2102, HXTR-4101, HXTR-6105, HXTR-6106, HXTR-6106 MIL-S-19500, PT 2102 ic HXTR-41Q1 HXTR-4101TXV 2N6679 HPAC-70GT HXTR-2101 HXTR-4101 hxtr-6105 6105tx BV EI 302 2003