DIE NPN RF Search Results

DIE NPN RF Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

DIE NPN RF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SST918 Abstract: mmst5424 SST5424 Text: DIE No. NPN VHF/UHF TRANSISTOR DIE No. C—33 • DESCRIPTION EPITAXIAL PLANAR NPN SILICON TRANSISTOR ■MAXIMUM RATINGS T a= 2 5 ° C Symbol Value Unit Collector-Emitter Voltage VcEO 15 V Collector-Base Voltage VcBO 25 V Emitter-Base Voltage V ebo 2.5 V	OCR Scan	C--33 OT323) 600MHz 60MHz SST918 mmst5424 SST5424	PDF
Transistor 2N3866 Abstract: 2N3866 2N3866 application note RF 2N3866 CP223 CP-22-3 chip die npn transistor chip die transistor Text: PROCESS CP223 Central Small Signal Transistor TM Semiconductor Corp. NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 3.5 MILS DIAMETER Emitter Bonding Pad Area 3.5 x 3.5 MILS	Original	CP223 2N3866 435-182Chip Transistor 2N3866 2N3866 2N3866 application note RF 2N3866 CP223 CP-22-3 chip die npn transistor chip die transistor	PDF
CM5943 Abstract: CP243 chip die npn transistor chip die transistor Text: PROCESS CP243 Central Small Signal Transistor TM Semiconductor Corp. NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.7 x 21.7 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.4 MILS DIAMETER Emitter Bonding Pad Area 3.4 x 3.4 MILS	Original	CP243 CM5943 435-1ip CM5943 CP243 chip die npn transistor chip die transistor	PDF
2N5109 Abstract: NPN planar RF transistor CP229 chip die npn transistor chip die transistor Text: PROCESS CP229 Small Signal Transistors NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.7 x 21.7 MILS Die Thickness 8.7 MILS Base Bonding Pad Area 3.2 MILS Diameter Emitter Bonding Pad Area 3.4 x 3.4 MILS Top Side Metalization	Original	CP229 2N5109 2N5109 NPN planar RF transistor CP229 chip die npn transistor chip die transistor	PDF
SILICON TRANSISTOR CORP Abstract: MPSH10 datasheet CMPTH10 CP302 MPSH10 MPSH11 chip die npn transistor Text: PROCESS CP302 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.3 x 2.3 MILS Emitter Bonding Pad Area 2.5 x 2.3 MILS	Original	CP302 MPSH10 MPSH11 CMPTH10 CMPTH11 SILICON TRANSISTOR CORP MPSH10 datasheet CMPTH10 CP302 MPSH10 MPSH11 chip die npn transistor	PDF
2N5109 Abstract: CP214 2N5109B chip die npn transistor chip die transistor Text: PROCESS CP214 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.5 MILS Base Bonding Pad Area 2.9 x 3.4 MILS Emitter Bonding Pad Area 2.9 x 3.4 MILS	Original	CP214 2N5109 2N5109 CP214 2N5109B chip die npn transistor chip die transistor	PDF
ny transistor Abstract: 2N5770 2N2857 2n918 die 2N918 2N5179 2N2857 DIE PN3564 PN3563 BFY90 Text: PROCESS CP317 Central Small Signal Transistor TM Semiconductor Corp. NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS	Original	CP317 CMPT918 2N918 2N2857 2N5179 2N5770 BFY90 PN3563 PN3564 ny transistor 2N5770 2N2857 2n918 die 2N918 2N5179 2N2857 DIE PN3564 PN3563 BFY90	PDF
transistor r 53 Abstract: MPSH10 datasheet MPSH10 mpsh10 data sheet CMPTH10 CP302 MPSH11 chip die npn transistor chip die transistor MPSH10 die Text: PROCESS CP302 Small Signal Transistor NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.3 x 2.3 MILS Emitter Bonding Pad Area 2.5 x 2.3 MILS Top Side Metalization	Original	CP302 MPSH10 MPSH11 CMPTH10 CMPTH11 22-March transistor r 53 MPSH10 datasheet MPSH10 mpsh10 data sheet CMPTH10 CP302 MPSH11 chip die npn transistor chip die transistor MPSH10 die	PDF
RF 2N3866 Abstract: Transistor 2N3866 2N3866 CP205 chip die npn transistor die bonding Text: PROCESS Central CP205 TM Small Signal Transistors Semiconductor Corp. NPN - Silicon RF Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE 15 x 15 MILS DIE THICKNESS 7.5 MILS BASE BONDING PAD AREA 2.0 x 2.4 MILS EMITTER BONDING PAD AREA 2.0 x 2.7 MILS	Original	CP205 2N3866 RF 2N3866 Transistor 2N3866 2N3866 CP205 chip die npn transistor die bonding	PDF
Untitled Abstract: No abstract text available Text: Ï4 MOTOROLA SC -CMODES/OPTÔ} dËT\| bBbTaSS □03flDbfl 3 6367255 MOTOROLA SC DIODES/OPTO 34C 38068 SILICON RF TRANSISTOR DICE (continued) 2C5946 DIE NO. — NPN LINE SOURCE — RF605.452 This die provides performance equal to or better than that of the following device types:	OCR Scan	03flDbfl RF605 2N5946 2C5946	PDF
PN3563 equivalent Abstract: 2N5770 2n918 transistor 2n918 die 2N2857 2N5179 2N918 BFY90 CMPT918 CP317 Text: PROCESS CP317 Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS Top Side Metalization Al - 30,000Å	Original	CP317 CMPT918 2N918 2N2857 2N5179 2N5770 BFY90 PN3563 PN3564 22-March PN3563 equivalent 2N5770 2n918 transistor 2n918 die 2N2857 2N5179 2N918 BFY90 CMPT918 CP317	PDF
transistor SMD 12E Abstract: SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE ad SMD 6PIN IC MARKING CODE p BFS36 Text: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3	Original	BFS469L6 BFR460L3, BFR949L3) transistor SMD 12E SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE ad SMD 6PIN IC MARKING CODE p BFS36	PDF
MRF515 Abstract: motorola MRF515 radiosonde motorola MRF627 MRF905 MRF626 Text: MOTOROLA SC C DIODES/OPTO} 34 DE \|L.3t>75S5 003fi0Tl 1 34t 3 8 t m 3 6367255 MOTOROLA SC DIODES/OPTO ° SILICON RF TRANSISTOR DICE (continued) MRFC515 DIE NO. — NPN LINE SOURCE — RF502.83 This die provides performance equal to or better than that of	OCR Scan	003fi0Tl RF502 MRF515 MRF626 MRF627 MRF905 MRFC515 0V/100 motorola MRF515 radiosonde motorola MRF627 MRF905	PDF
SMD 6PIN IC MARKING CODE Abstract: marking code CB SMD ic TRANSISTOR SMD MARKING CODE ce ce BFS469L6 MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE ad BFR460L3 BFR949L3 BFS360L6 marking code CB SMD tr2 Text: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3	Original	BFS469L6 BFR460L3, BFR949L3) SMD 6PIN IC MARKING CODE marking code CB SMD ic TRANSISTOR SMD MARKING CODE ce ce BFS469L6 MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE ad BFR460L3 BFR949L3 BFS360L6 marking code CB SMD tr2	PDF

marking code CB SMD tr2 Abstract: TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c Text: BFS466L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR360L3	Original	BFS466L6 BFR460L3, BFR360L3) marking code CB SMD tr2 TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c	PDF
MRF8003 Abstract: citizen mhz Text: i SILICON RF TRANSISTOR DICE continued MRFC8003 die no. — npn LINE SOURCE — RF502.147 This die provides performance equal to or better than that of the following device types: MRF8003 Designed for use in citizen-band amplifiers up to 30 MHz. High breakdown voltages allow a high	OCR Scan		PDF
High Speed Switches Abstract: MOTOROLA LINEAR HF Text: M O T O R O L A SC -CDIODES/OPTOJ j 6367255 MOTOROLA SC 34 b3b75SS CDIODES/O PTO 34C QDSflOb^ 38069 D -ip , ^ 3 SILICON RF TRANSISTOR DICE continued) 2C5947 DIE NO. — NPN LINE SOURCE — RF502.80 & This die provides performance equal to or better than that of	OCR Scan	b3b75SS RF502 2C5947 2N5947 High Speed Switches MOTOROLA LINEAR HF	PDF
MRF323 Abstract: No abstract text available Text: MOTORO LA SC -CDIODES/OPTOJ 6367255 MOTOROLA SC 34 CDIODES/OPTO DE \| b B b 7 E S S 003Ô0SL, S \| ~ 3^C 38086 SILICON RF TRANSISTOR DICE continued) MRFC323 die no. — npn LINE SOURCE — RF605.762 This die provides performance equal to or better than that of	OCR Scan	RF605 MRF323 MRFC323 MRF323	PDF
SILICON SMALL-SIGNAL DICE Abstract: SILICON DICE motorola Text: I m ! 6367255 MOTOROLA SC DE^b3b?ass D IODES/OPTO dd 34C SILICON RF TRANSISTOR DICE (continued) 3ögöd 38080 7 “- j m \|~ D tr BFRC91 DIE NO. — NPN LINE SOURCE — RF502.104 This die provides performance equal to or better than that of the following device types:	OCR Scan	RF502 BFR91 BFRC91 SILICON SMALL-SIGNAL DICE SILICON DICE motorola	PDF
2N5945 Motorola Abstract: No abstract text available Text: 34 MOTOROLA SC -CDIODES/OPTOÏ Î 6367255 ' * MOTOROLA SC D E \| b3L7E55 □□3flQb7 1 <D I O D E S / O PTO 34C 38067 D SILICON RF TRANSISTOR DICE continued) 2C5945 DIE NO. — NPN LINE SOURCE — RF605.451 This die provides performance equal to or better than that of	OCR Scan	b3L7E55 RF605 2N5945 2C5945 2N5945 Motorola	PDF
MRF221 Abstract: mrf433 2N6081 2C6081 Text: M O T O R O L A SC -CDIODES/OPTO} i 6367255 MOTOROLA SC 34 DE~\|fc.3fc.7a5S 34c DIO DES/OPTO 003Ö071 38071 SILICON RF TRANSISTOR DICE (continued) 2C6081 DIE NO. — NPN LINE SOURCE — RF605.419 This die provides performance equal to or better than that of	OCR Scan	RF605 2N6081 MRF209 MRF221 MRF433 2C6081 mrf433 2C6081	PDF
MRF2947RA Abstract: MRF2947 MRF2947AT1 MRF2947RAT1 microlab SC-70ML Text: MOTOROLA Order this document by MRF2947/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF2947AT1,T2 Low Noise Transistors MRF2947RAT1,T2 Motorola’s MRF2947 device contains two high performance, low–noise NPN silicon bipolar transistors. This device has two 941 die housed in the high	Original	MRF2947/D MRF2947AT1 MRF2947RAT1 MRF2947 MRF2947 MRF2947RA microlab SC-70ML	PDF
MRF406 MOTOROLA Abstract: MRF406 Text: MOTOROL A SC -CDI0DES/0PT03- 1 '6367255 MOTOROLA 34 SC DE \| b 3 h 7 S S S 003fl0afl DIODES/OPTO 34C 38088 T~33-/3 SILICON RF^t N a NSISTOR DICE: (continued) MRFC406 DIE NO. — NPN LINE SOURCE — RF605.417 This die provides performance equal to or better than that of	OCR Scan	-CDI0DES/0PT03- 003fl0afl RF605 MRF406 MRFC406 MRF406 MOTOROLA MRF406	PDF
MRF8004 Abstract: citizen mhz motorola opto SILICON DICE motorola Text: * MOTOROLA Î SC -CDI0DES/0PT03- 6367255 MOTOROLA SC 34 DE \| t , 3 b ? 5 S S D IO D ES/O PTO 3 4C □ G 3 ö G clö 38098 D SILICON RF TRANSISTOR DICE (continued) MRFC8004 DIE NO. — NPN LINE SOURCE — RF502.148 A This die provides performance equal to or better than that of	OCR Scan	MRFC8004-npn rf502 MRF8004 MRF8004 citizen mhz motorola opto SILICON DICE motorola	PDF

DIE NPN RF Search Results

DIE NPN RF Result Highlights (5)

DIE NPN RF Datasheets Context Search

SST918

Transistor 2N3866

CM5943

2N5109

SILICON TRANSISTOR CORP

2N5109

ny transistor

transistor r 53

RF 2N3866

Untitled

PN3563 equivalent

transistor SMD 12E

MRF515

SMD 6PIN IC MARKING CODE

marking code CB SMD tr2

MRF8003

High Speed Switches

MRF323

SILICON SMALL-SIGNAL DICE

2N5945 Motorola

MRF221

MRF2947RA

MRF406 MOTOROLA

MRF8004