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    DIN 41876 Search Results

    DIN 41876 Result Highlights (5)

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    DIN 41876 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: ^£.mi- 2onductoi , Una. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BCX23 BCX39 BCX 23 and BOX 39 are epitaxial PNP silicon planar transistors in TO 18 metal case (18 A 3 DIN 41876). The collector is electrically connected to the case. These transistors


    Original     		PDF BCX23 BCX39

    2N2222 circuit

    Abstract: 2N2222 npn 2N2222 2n2222 test circuit 2N2222 base capacitance
    Text: 2N2222 NPN Silicon Epitaxial Planar Transistor with high cutoff frequency, for high speed switching mox.0.5^ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings


    OCR Scan     		PDF 2N2222 2N2222 circuit 2N2222 npn 2N2222 2n2222 test circuit 2N2222 base capacitance

    2N2222A

    Abstract: J 2N2222A Transistor 2N2222A 2N2222A npn transistor 2N2221A 2N2221A-2N2222A BR 2N2222A NPN 2N222 2n2222a transistor Metal 2n2222a
    Text: 2N2221A, 2N2222A NPN Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching mox.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings


    OCR Scan     		PDF 2N2221A, 2N2222A 2N2222A 2N2221A J 2N2222A Transistor 2N2222A 2N2222A npn transistor 2N2221A-2N2222A BR 2N2222A NPN 2N222 2n2222a transistor Metal 2n2222a

    BC260

    Abstract: No abstract text available
    Text: BC260 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its DC current gain. m ax .0.5 $ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case


    OCR Scan     		PDF BC260 BC260

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS The BPX43 is an epitaxial NPN silicon planar phototransistor in a T018 18 A 3 DIN 41876 package with a glass lens. The collector is electrically connected to the metallic case. Sym. Value Unit ^S m a x 880 nm 450 to 1100 Spectral Sensitivity Range


    OCR Scan     		PDF BPX43 PCE25 BPX43

    BFR15

    Abstract: Q62702-F322 CP12e transistor G25 transistor 2e CER20 TRANSISTOR CP12e 042PF
    Text: BFR15 NPN Transistor for low-noise broadband and antenna amplifiers BFR15 is an epitaxial NPN silicon planar RF transistor in the case 1 8 A 4 DIN 41876 TO-72 for universal application up into the GHz range, e.g. for low-noise broadband and antenna amplifiers.


    OCR Scan     		PDF BFR15 BFR15 Q62702-F322 rcaseg70 ip22e cp12e= 103MHz Q62702-F322 CP12e transistor G25 transistor 2e CER20 TRANSISTOR CP12e 042PF

    Siemens 1736

    Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312
    Text: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for


    OCR Scan     		PDF 0235bG5 Q004312 BCY66 Q60203-Y66 TcaseS45Â fi23Sb05 Q0QM31? 120Hz Siemens 1736 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312

    BC266

    Abstract: BC261 BC262 BC263 BC-261
    Text: BC261 . . BC266 PNP Silicon Epitaxial Planar Transistors for switching and am plifier applications The transistors are subdivided into three groups A, B and C according to their current gain. BC263 is a low noise type. max.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41876


    OCR Scan     		PDF BC261 BC266 BC263 BC266 BC261 BC262, BC262 BC-261

    10RJ

    Abstract: KCB05 BCY67 F-05 Q62702-C254 510zma 5v 10rj
    Text: 55C D • fl235bOS 000431^ 1 SIEG BCY67 7 ^ ^ 7 - Z- 3 PNP Silicon Planartransistor SIEMENS AKTIENfiESELLSCHAF 04319 BCY 67 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided


    OCR Scan     		PDF 235b05 04-3L9 BCY67 Q62702-C254 mb-25 10RJ KCB05 F-05 Q62702-C254 510zma 5v 10rj

    BFW30

    Abstract: bfw 10 transistor bfw 30 transistor transistor BFW 10
    Text: BFW 30 NPN Silicon planar RF transistor BFW 30 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 TO-72 , designed for universal application up into the GH z range, e.g. for vertical amplifiers in broadband oscillographs and for broadband antenna amplifiers. Terminals


    OCR Scan     		PDF BFW30 BFW30 Q62702-F bfw 10 transistor bfw 30 transistor transistor BFW 10

    BSX48

    Abstract: BSX49 sm 58 b transistors M502 Q60218-X48 Q60218-X49 q406 1h3c Transistor BSX 95
    Text: 25C D • A23£bQ5 0DQMÖ1S 2. ■ S I E 6 BSX48 BSX49 NPN Silicon Planar Transistors - SIEMENS AKTIEN6ESE LL SCH AF BSX 48 and BSX 49 are double diffused epitaxial silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . Their collectors are electrically connected to the case.


    OCR Scan     		PDF fl23SbOS BSX48 BSX49 Q60218-X48 Q60218-X49 BSX49 sm 58 b transistors M502 Q60218-X48 Q60218-X49 q406 1h3c Transistor BSX 95

    BFR15A

    Abstract: 200MHZ S70C
    Text: IMPN -Transistor für rauscharme Breitband- und Antennenverstärker BFR 15A B F R 1 5 A ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18A 4 DIN 41876 TO-72 für allgemeine Verwendung bis in den GHz-Bereich, z. B. für rauscharme Breitband- und Antennenverstärker.


    OCR Scan     		PDF BFR15A Q62702-F460 200MHZ 200MHZ S70C

    BFX62

    Abstract: Transistor BFX 25 Transistor BFX 4 Transistor BFX
    Text: BFX62 NPN Transistor for amplifier and oscillator stages up to 1 GHz BFX 62 is an NPN silicon planar transistor in a case 18A 4 DIN 41876 TO-72 . The leads are insulated from the case. The transistor is particularly suitable for amplifier and oscillator stages at frequencies up to 1 GHz.


    OCR Scan     		PDF BFX62 Q60206-X -C12e BFX62 Transistor BFX 25 Transistor BFX 4 Transistor BFX

    BFX60

    Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
    Text: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier


    OCR Scan     		PDF BFX60 BFX60 Q60206-X p21e 510Z5 bfx 63 transistor for RF amplifier

    transistor bc 541

    Abstract: TRANSISTOR BC 534 PNP transistor Siemens 14 S S 92 AF139 TRANSISTOR BC 534 Germanium power Germanium mesa
    Text: 55C D • û23St.D5 OOQ405Ö T PNP Germanium RF Transistor -SIEMENS A F 139 - AKTIENGESELLSCHAF 31-07 for input stages, m ixer and oscillator stages up to 860 MHz AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.


    OCR Scan     		PDF OOQ405Ö Q60106-X139 135H-- AF139 transistor bc 541 TRANSISTOR BC 534 PNP transistor Siemens 14 S S 92 AF139 TRANSISTOR BC 534 Germanium power Germanium mesa

    pm4020

    Abstract: AF279 p21b AF279S AF240 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor
    Text: f 25C D • flS3SbOS 00DMQ7b 1 H S I E 6 PIMP Germanium RF Transistor - SIEMENS AKTIENGESELLSCHAF A F240 for m ixer and oscillator stages up to 9 0 0 M H z AF 2 4 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


    OCR Scan     		PDF 23SbOS AF240 Q60106-X240 -13J5Ã TambS45Â -CC80 y12bl pm4020 AF279 p21b AF279S 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor

    Untitled

    Abstract: No abstract text available
    Text: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for


    OCR Scan     		PDF 023SbQS Q004312 60203-Y66 BCY66 QQ0M31Ö

    BFX59

    Abstract: Transistor BFX 25 BFX59F
    Text: B F X 59 B F X 59 F N PIM -Transistoren fü r Treiber- und Endstu fen in A ntennenverstärkern BFX 59 und BFX 59F sind epitaktische NPN-Silizium-Planar-HF-Transistoren im Gehäuse 1 8 A 4 DIN 41876 TO-72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Die Tran­


    OCR Scan     		PDF Q60206-X59 Q60206-X59-S5 BFX59 Transistor BFX 25 BFX59F

    Transistor BSX 95

    Abstract: BSX48 BSX49 Q60218-X48 Q60218-X49 IJ.AN
    Text: BSX 48, BSX 49 NPN Transistors fo r switching applications Transistors BSX 48 and BSX 49 are double diffused epitaxial silicon planar transistors in a case 18 A 3 DIN 41876 T O -18 . The collector is electrically connected to the case. The transistors are for use as high-speed switches, and are particularly suitable for


    OCR Scan     		PDF Q60218-X48 Q60218-X49 105iiA BSX48 Transistor BSX 95 BSX48 BSX49 Q60218-X48 Q60218-X49 IJ.AN

    F25 transistor

    Abstract: AFY37 60106-Y Germanium Transistor Germanium mesa transistor 60106
    Text: AFY37 The A FY37 is a germanium PNP RF epitaxial mesa transistor in a case 18 A 4 DIN 41876 TO-72 . The terminals are electrically insulated from the case. The A FY 37 is particularly designed for use in antenna amplifiers up to 900 MHz. O rder num ber Q 6 0 1 0 6 - Y 37


    OCR Scan     		PDF AFY37 AFY37 60106-Y 100MHz) 800MHz) F25 transistor Germanium Transistor Germanium mesa transistor 60106

    AF239

    Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A
    Text: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.


    OCR Scan     		PDF A23Sb05 AF239 Q60106-X239 T1-0221) transistor h5c AF 239 0406H F239 Q60106-X239 WTV4 AAO-4A

    BFX89

    Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684
    Text: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general


    OCR Scan     		PDF 23ShQS Q62702-F296 2JS41W BFX89 Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684

    BFX59

    Abstract: Transistor BFX 25 BFX59F
    Text: B F X 59 B F X 59 F N PIM -Transistoren fü r Treiber- und Endstu fen in A ntennenverstärkern BFX 59 und BFX 59F sind epitaktische NPN-Silizium-Planar-HF-Transistoren im Gehäuse 1 8 A 4 DIN 41876 TO-72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Die Tran­


    OCR Scan     		PDF Q60206-X59 Q60206-X59-S5 BFX59 Transistor BFX 25 BFX59F

    AF139

    Abstract: OOQ405 mz 1540
    Text: ESC D • flE35t.05 0004056 T B IS IE G t n PNP Germanium RF Transistor AF139 -SIEMENS AKTIENGESELLSCHAF - ~ T ~ 3 I~ 0 7 for input stages, mixer and oscillator stages up to 8 6 0 M H z AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads


    OCR Scan     		PDF OOQ405Ã AF139 Q60106-X139 200MHz- A800MHZ- AF139 10lHHz OOQ405 mz 1540