PM50302F

Abstract: diode H5 1.5-25 5v.1 45F125
Contextual Info: HITACHI PM50302F SILICON N -C H A N N E L POWER MOS FET MODULE HIGH SPEED POWER SWITCHING • FEATURES • Equipped with Power MOS FET • Low OrvResistance • High Speed Switching • Low Drive Current • Wide Area of Safe Operation • Inherent Parallel Diod between Source and Drain

UUA 180

Abstract: diod m4 PM45302F vus3 M4 dioda
Contextual Info: HITACHI PM45302F S IL IC O N N - C H A N N E L M O S F E T M O D ULE HIGH S P E E D P O W E R SW ITCH ING • FEATU RES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching • Low Drive Current • Wide Area of Safe Operation • Inherent Parallel Diod between Source and Drain

DIODE DATABOOK

Contextual Info: DIXYS DSEP 2x 35-06C Advanced Technical Information HiPerFRED Epitaxial Diode •FAV with soft recovery V rrm l rr V V HHM V T yp e V 600 600 S ym bo l I frms D S E P 2x 35 -06 C T e s t C o n d itio n s =8 0 °C ; rectangular, d =0.5 <10 us; rep. rating, pulse w idth lim ited by T VJM

baco 23e01

Abstract: C21AH20 23E01D CEE24 baco IEC 947 EN60947 23E10D BX0500 23E01 S20SA10
Contextual Info: Leverantör • Beläget i Strasbourg, Frankrike • Grundat 1919 • Ca. 800 anställda www.oemautomatic.se 12:2 Strömställare Ø22,5 mm sid 12:4 Kontaktmoduler sid 12:9 Joystick sid 12:10 Signallampor sid 12:12 Märkskyltar sid 12:14 Tryckknappslådor

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HA-50H ^ HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM

Contextual Info: MITSUBISHI IGBT MODULES CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE . . Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of one IGBT in a single configuration with a reverse-connected super­

diod m4

Contextual Info: MITSUBISHI IGBT MODULES CM300HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching a pplications. Each m odule consists of one IGBT in a single co nfig ura ­ tion w ith a reverse-connected super-fast recovery free-w heel diode.

igbt 400A, 1200V mitsubishi

Contextual Info: MITSUBISHI IGBT MODULES CM400HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching applications. Each m odule consists of one IGBT in a single co nfig ura ­ tion w ith a reverse-connected super-fast recovery free-w heel diode.

Contextual Info: MITSUBISHI IGBT MODULES CM600HA-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching a pplications. Each m odule consists of one IGBT in a single co nfig ura ­ tion w ith a reverse-connected super-fast recovery free-w heel diode.

Contextual Info: MITSUBISHI IGBT MODULES CM400HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura­ tion with a reverse-connected su­ per-fast recovery free-wheel diode.

Contextual Info: MITSUBISHI IGBT MODULES CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a p p li­ cations. Each m odule consists of one IGBT in a single configuration w ith a reverse-connected s u pe r­

Contextual Info: MITSUBISHI IGBT MODULES CM75TF-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a p p li­ cations. Each m odule consists of six IGBTs in a three phase bridge configuration, w ith each tran sistor

Contextual Info: MITSUBISHI IGBT MODULES CM300HA-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching applications. Each m odule consists of one IG BT in a single co nfig ura ­ tion w ith a reverse-connected super-fast recovery free-w heel diode.

diod m4

Abstract: diode LT 42
Contextual Info: MITSUBISHI IGBT MODULES CM400HA-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a pp lica ­ tions. Each m odule consists of one IGBT in a single configuration with a reverse-connected su pe r-fa st re­

sim 900A

Abstract: Diode LT 450 Diode LT 023 tra 103 electric forklift 450HA-5F
Contextual Info: MITSUBISHI IGBT MODULES CM450HA-5F HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching appli­ cations. Each m odule consists of one IGBT in a single co nfig ura ­ tion, w ith a reverse connected super-fast recovery free-w heel d i­

transistor LT 028

Contextual Info: MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are d e ­ signed fo r use in sw itching a pp li­ cations. Each m odule consists of six IGBTs in a three phase bridge configuration, w ith each transistor

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM300HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE j QM300HC-M i ! ! IC Collector c u rre n t.300A ; Vcex C ollector-em itter v o lta g e . 350V ! tiFE DC current g a in .100 *

Contextual Info: MITSUBISHI IGBT MODULES CM200HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching applications. Each m odule con­ sists of one IGBT in a single co n ­ figuration w ith a reverseconnected su pe r-fa st recovery

600HA-5F

Contextual Info: MITSUBISHI IGBT MODULES CM600HA-5F HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching appli­ cations. Each m odule consists of one IGBT in a single co nfig ura ­ tion, w ith a reverse connected super-fast recovery free-w heel d i­

Contextual Info: MITSUBISHI IGBT MODULES CM600HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching applications. Each m odule consists of one IGBT in a single co n fig u ra ­ tion w ith a reverse-connected super-fast recovery free-w heel diode.

DIODE A112

Abstract: AARI AETA
Contextual Info: 1MBI400F-060 400A IG B T : Outline Drawings IGBT MODULE i Features • fëfi&inÇÆ Low Saturation Voltage • «Œ SEB ( M O S * - h f t & j Voltage Drive Variety of Power Capacity Series : A p p lica tio n s • * - ? - * m m * > '< — 9 • A C , DCt#-—# 7 > ~ f

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-05023 R1 MBN1200E25C Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70 , N>30,000cycles ∗ Low noise due to ultra soft fast recovery diode. ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input

marking POJ diode

Abstract: MMBV432LTI MARKING YA SOT-23 MMBV432LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Silicon ~ning Order this document by MMBV432LT1/D DATA Diode MMBV432LTI This device is designed for FM tuning, general frequency control and tuning, or any top–of–th+line application requiring back–to–back diode configuration for minimum

SN74142

Abstract: Bcd counter nixie tube driver sn74141
Contextual Info: TTL MSI TYPE SN74M2 BCD C0UNTER/4-BIT LATCH/BCD DECODER/DRIVER BU LLETIN NO. DL S 7 2 1 1 7 1 9 , MAY 1 B 7 2 -R E V IS E D DECEMBER 1 9 7 2 JO R N D U A L-IN -LIN E PACKAGE TOP VIEW FUNCTION TABLE INPUTS COUNT PULSE CLEAR LATCH O N* 5d X L L H 1 H L 1