Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-05023 R1 MBN1200E25C Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70 , N>30,000cycles ∗ Low noise due to ultra soft fast recovery diode. ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input
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IGBT-SP-05023
MBN1200E25C
000cycles)
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irf 792
Abstract: GA400TD25S
Text: PD -5.051B PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA400TD25S Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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GA400TD25S
10kHz
irf 792
GA400TD25S
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diod t4
Abstract: p j 85 diod GA400TD25S t4 diod INT-A-PAK Dual weight diod 800A
Text: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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-50051D
GA400TD25S
10kHz
diod t4
p j 85 diod
GA400TD25S
t4 diod
INT-A-PAK Dual weight
diod 800A
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GA400TD25S
Abstract: No abstract text available
Text: PD -50051C GA400TD25S "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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-50051C
GA400TD25S
10kHz
Colle52-7105
GA400TD25S
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Untitled
Abstract: No abstract text available
Text: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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-50051D
GA400TD25S
10kHz
85ded
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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Triac 12F
Abstract: irkt 40 thyristor silicon WAFER chips 31017 triac 1200V 21PT 36MB-A 40HF 70HF 85HF
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0 h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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T-63-65"
TRIAC210-.
TRIAC350-.
FD150-.
FD210-.
FD280-.
FD350-.
IRCI210-.
IRCI230-.
IRCI350-.
Triac 12F
irkt 40
thyristor silicon WAFER chips
31017
triac 1200V
21PT
36MB-A
40HF
70HF
85HF
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L0122
Abstract: diod xm BPYP21 CQYP52
Text: 9-74/3 OSWIETLACZ ELEKTROLUMINESCENCYJNY CQYP52 SWW 1156-6 Oswietlacz elektroluminescencyjny sklada si§ z dziewiQciu elektroluminescencyjnych diod dyfuzyjnych wykonanych z arsenku galu i stanowi^cych zrödla promieniowania podczerwonego. Jest on przeznaczony l^cznie z fototranzystorem BPYP21
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CQYP52
BPYP21
L0122
diod xm
CQYP52
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dc cdi schematic diagram
Abstract: GS 069 LF ECG901 ECG907 cdi schematic diagram T432 ECG9
Text: PHILIPS 17E E C G INC ^53120 D 00D3L.GS ECG907 DIODE ARRAY semiconductors D io d e A rra y Six Matched Diodes on a Common Substrate M o n o lith ic S ilic o n The EC G 907 c o n sists o f s ix uUr&*fast, low ca p ac itan ce diod es on a common monolithic su b strate. Inte
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00D3L
ECG907
T-43-24
ECG907
dc cdi schematic diagram
GS 069 LF
ECG901
cdi schematic diagram
T432
ECG9
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Untitled
Abstract: No abstract text available
Text: S 'a y M u - / tU T K Schottky Barrier Diod« Axial Diode O U T L IN E D IM E N S IO N S Case : Axial D1NS4 40V 1A B= 2QMIN ' ¿2.6 o » 20MIN -M—° C athode band Marking S4 6N - - u - y h A ! » < f « ï D ate code Type No. U nit I mm • R A TIN G S Absolute Maximum Ratings
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cl071
Abstract: CLD71 CLD71BB CLD72 CLD72BB CL072
Text: 40E D aH'i'iVBÛ OOGCH'ìM 1 S S E N I FASCO INDS/ SENISVS CLD71 CLD72 CLD71BB CLD72BB Silicon Planar Photovoltiac Diodes Product Data — H .2 8 3 D IA . 1-«- — .2 4 6 .2 4 8 jL_ G E N E R A L D E S C R IP T IO N — The CLD Series of Photo diod es is sp ecifically designed to optim ize P hotovoltaic
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CLD71
CLD72
CLD71BB
CLD72BB
CLD72
CLD71
CLD71V
CLD72V.
cl071
CLD72BB
CL072
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81-088-2
Abstract: HCC242 4N22A 4N24A HCC240 HCC240HV HCC242HV
Text: OPTEK TEC H NO LO GY INC MAE D t.?TäSÜO 0001545 ûTfl OTK OPTEK Product Bulletin May 1989 Surface Mount Optically Coupled Isolator 'T4i-a3 Types HCC240, HCC242 Features Absolute Maximum Ratings TA = 25°C unless otherwise noted • Surface mountable on ceramic or printed
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HCC240,
HCC242
4N22A
4N24A
MIL-S-19500
HCC240
MHz111
81-088-2
HCC242
4N24A
HCC240
HCC240HV
HCC242HV
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UDN5711
Abstract: DN5711 N5711
Text: U D N 5711/57 12/5713/5714-N DESCRIPTION PIN CONFIGURATIONS Th e U D N 5711 series of dual pe riphe ral drivers have high voltage 80V and high c u rre n t (300mA) NPN o u tp u t tra nsistors. In a d d itio n an ove rshoo t clam p d io d e is p ro vided fo r each o u tp u t c o lle c to r fo r use w hen
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12/5713/5714-N
300mA)
UDN5711/5712/5713/5714-N
500kHz
UDN5711
DN5711
N5711
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TG 56369
Abstract: fast diod 5A Ultra Fast Recovery Double Rectifier Diodes BYV32 IEC134 RECTIFIER DIODES PHILIPS 20/TG 56369
Text: BYV32 SERIES PHILIPS INTERNATIONAL SLE D • 7110a2b Q0413Sfl C 7T ■ P H I N T - ¿ > 3 - 1 ^ ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic. T hey are intended for
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BYV32
7110fl2b
GD413SÃ
DQ413b7
M2488
M1257
TG 56369
fast diod 5A
Ultra Fast Recovery Double Rectifier Diodes
IEC134
RECTIFIER DIODES PHILIPS
20/TG 56369
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PS2043
Abstract: Scans-00136701
Text: 3QE D E C EL EC TR ON ICS INC o • LM27SBS GOETbbO 1 r PHOTO COUPLER PS2043 HIGH SPEED 8PIN PHOTO COUPLER PACKAGE DIMENSIONS FEATURES U n it: m m l • 9.621 0.5 8 n 7 n 6 n 5 n High Speed Response O J p s T Y P . • High Isolation Voltage 2 500 V r .m .s.
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LM27SES
PS2043
2500Vr
PS2043
Scans-00136701
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2N6147
Abstract: Case 175-03 376 motorola 2N5571
Text: I w TOROLA I ^ SC -cTiODES/OPTOJ 636725S MOTOROLA SC »T|b3b725S OOT'IDOD 1 <DIODES/OPTO 0 1E 79000 D T " * S ' - / 'i r T r ia c s Silicon Bidirectional Triode Thyristors . . . designed prim a rily fo r industrial and m ilitary applications for the control of ac
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b3b725S
636725S
2N5571
2N5574
2N6145
2N6147
T4100M
T4110M
2N5574
Case 175-03
376 motorola
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LDT-350
Abstract: pulsed laser diode GaAs 905 LDT391 904nm LDT350 904nm laser diode
Text: LASER D I O DE INC 12 D • LDT-350 LDTA-35ÇI LDT-391 5 3 ä 2 c]ÖS OOOD471 □ « L A » ■ 4 LASER DIODE, INC. T-41 -07 HIGH POWER FIBER COUPLED LASER DIODE ARRAYS FEATURES Small Source Size High Brightness P Up to 300 Watts Peak Optical Power Output
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OOOD471
LDT-350
LDTA-35
LDT-391
904nm
LDTA-350
835nm
pulsed laser diode GaAs 905
LDT391
LDT350
904nm laser diode
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diod t4
Abstract: T4 diod
Text: A jf c C o M m a n A M P com pany Surface Mount Abrupt Tuning Varactors MA45430 Series Features SOT-23 • Su rface M ount P a ck a g e • Low Cost • High Q uality F a cto r • T a p e and R eel P a ck a g in g A vailable • SPC C o n tro lled P ro cess fo r S u p erio r C-V R epeatability
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MA45430
OT-23
diod t4
T4 diod
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Untitled
Abstract: No abstract text available
Text: IH5140 thru IH5145 S em iconductor High-Level CMOS Analog Switches April 1999 Feature escription • Super Fas1 he IH5140 Fam ily of C M O S sw itches utilizes H arris’ latchbe junction isolated processing to build the fastest sw itches currently available. T hese sw itches can be toggled at a rate of
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IH5140
IH5145
100pA
IH5040
DG180
235Hz
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LDT-362
Abstract: No abstract text available
Text: LASER DIODE INC IE SBÖSTÖS 00DDM34 S I LAD LDT-362, LDT-362E LDT-60005, LDT-60005E LDT-60001 " T-4T-07 LASER DIODE IN C . 1300nm EDGE EMITTING LED SERIES FEATURES ►High Peak Power ►Fast Rise Time ►Single and Multi mode Fiber Optic Pigtail Options ► Hermetic and Non-Hermetic Packages
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00DDM34
LDT-362,
LDT-362E
LDT-60005,
LDT-60005E
LDT-60001
T-4T-07
1300nm
LDT-362
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DIODE A112
Abstract: AARI AETA
Text: 1MBI400F-060 400A IG B T : Outline Drawings IGBT MODULE i Features • fëfi&inÇÆ Low Saturation Voltage • «Œ SEB ( M O S * - h f t & j Voltage Drive Variety of Power Capacity Series : A p p lica tio n s • * - ? - * m m * > '< — 9 • A C , DCt#-—# 7 > ~ f
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1MBI400F-060
19S24-^
DIODE A112
AARI
AETA
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Untitled
Abstract: No abstract text available
Text: HIP6017 Semiconductor Advanced PWM and Dual Linear Power Control April 1998 Features Description • Provides 3 Regulated Voltages T he H IP 60 17 provides the po w e r con tro l and protection for th re e o u tp u t volta ge s in high -perform a nce m icro proce ssor
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HIP6017
HIP6017
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diodo A6
Abstract: PJ 63 MM diode Wf VQE 23 F wf vqe 24 d DIODO LED ir wf vqe 24 f WF vqe 24 e WF VQE 23 E din 40040 humidity WF VQE 22 d
Text: SIEMENS AKTIEN6ESELLSCHAF ^7E D • fl235bOS 00272flb b « S I E G S IE M E N S SFH 601G SERIES PHOTOTRANSISTOR OPTOCOUPLER 63 Package Dimensions in Inches mm 807(7.81 29\ (7.4) J p o ti) E E E a 3 7 ] BASE AN00C E ^ CATH00E E 3 NC E COLLECTOR ■<d J^EMITTï B
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fl23SbOS
601G-1,
601G-2
601G-3
601G-4
E52744
-X001
diodo A6
PJ 63 MM diode
Wf VQE 23 F
wf vqe 24 d
DIODO LED ir
wf vqe 24 f
WF vqe 24 e
WF VQE 23 E
din 40040 humidity
WF VQE 22 d
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TENTATIVE TB6526F TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB6526F CHOPPER-TYPE BIPOLAR STEPPING MOTOR CONTROL DRIVER 1C The TB6526F is a PW M chopper-type sinusoidal micro-step bipolar stepping motor driver 1C. It is capable of 1-2 and 2W1-2 phase excitation modes
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TB6526F
TB6526F
SSOP24-P-300-1
961001EBA1
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