Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

Triac 12F

Abstract: irkt 40 thyristor silicon WAFER chips 31017 triac 1200V 21PT 36MB-A 40HF 70HF 85HF
Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0 h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

Contextual Info: S G S'IC S -T H Q M SO N . 59C D I 7 C12CJ237 02713 O THOMSON-CSF ÜGG2713 D T-GMP5/5A/5B DIVISION SEMICONDUCTEURS UNIDIRECTIONAL TRAN SIEN T VOLTAGE SU PPRESSO RS DIOD ES D E PROTECTION UNIDIRECTIONNELLES TRANSIL Pp : 60OW/1ms expo. 7,2kW/8-20^s expo. TRANSIENT VOLTAGE SUPPRESSOR DIODES ESPECIALLY

Scans-048

Abstract: UL1550-II DSAGER0007
Contextual Info: UKLAD SCALONY ANALOGOWY UL1550L 19-77/2 SWW 1156-32 CM] 1 M,5 1 5,3 S*13 U klad scalony w obudowie typu CE12 CB-85 1 — anoda, 2 — katoda Schem at elektryczny ZASTOSOW ANIE DANE TECHNICZNE Uklad jest przeznaczony do zasilania w araktorow (diod pojemnosciowych) pracuj^cych w glowicach odbiornikow

UL1550

Abstract: cb85 1550LI
Contextual Info: 19-77/2 UKLAD SCALONY ANALOGOWY UL1550L SWW 1156-32 nsn 1 *0,5 / ' « 5,3 s /J U k la d sc a lo n y w o budow ie ty p u CE12 CB-85 1 — an o d a, 2 — k a to d a S c h e m a t e le k try c z n y ZASTOSOYVANIE DANE TECHNICZNE U k la d je s t p rz ez n ac zo n y do z a s ila n ia w a ra k to ro w (diod

BB105

Abstract: BB105A bb105g WARIKAP diody SOD-23 PD2824 ce37 ma373 BB105A/B
Contextual Info: WARIKAP ¥ BB105A, BB105G SWW 1156-151 D iody k rz em o w e e p ip la n a rn e o z m ien n ej pojem n o sci p rz ez n ac zo n e do p ra c y w u k la d z ie glow icy U H F w o d b io rn ik a c h tele w iz y jn y c h i rad io w y ch . 1 3 tf m a x 0,5 max2,5

AAP153

Abstract: 2XAAP153 DIOD DIODA
Contextual Info: 3 - 74/1 DIODA UNIWERS ALN A AAP153Ì 2XAAP153 SWW 1156-121 D ioda g e rm a n o w a o strzo w a AA P153 je st p rzezn aczo n a do sto so w an ia glów nie w u k ia d a c h d e te k cy jn y c h , p o m ia ro w ych i zabezpieczaj^cych. D iody AAP153 d o b iera n e p a ra m i sq stosow ane w o d b io rn ik a c h PM w u k iad z ie d e te k to ra stosunkow ego.

Optocouplers App Note

Abstract: diod zo
Contextual Info: T I L 1 18-1, T I L 1 18-2, TIL118-3 OPTOCOUPLERS D 1 6 0 7 , NOVEMBER 1 9 7 3 -R E V IS E D JULY 1 9 8 9 Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor High Direct-Current Transfer Ratio High-Voltage Electrical Isolation . . . 3.5 3 kV

LCD 2X16

Abstract: IEC60870-5-101 dwa 106 n 161 CZIP-3H ABB TZN 124 IEC-60870-5-101 siemens transformator IEC255 rs485 SIEMENS DNP prostowniki
Contextual Info: SPIS TREŚCI 1. WSTĘP. 4 2. OGÓLNA CHARAKTERYSTYKA SYSTEMU CZIP . 5

Contextual Info: MOTOROLA Order this document by MMSF3300/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3300 WaveFET Power Surface Mount Products T HDTMOS Single N-Channel Field Effect Transistor u T SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 12.5 m fl TMOS W aveFET™ de vice s are an ad van ced se rie s of po w e r M O SFETs w h ich utilize M o to ro la ’s

Contextual Info: MOTOROLA Order this document by MTDF2N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTDF2N06HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs which

Diod UG

Contextual Info: MOTOROLA Order this document by MMSF3205/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3205 Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS RDS on = 0.015 OHM

ITRON DC 205

Abstract: SF3305
Contextual Info: MOTOROLA Order this document by MMSF3305/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3305 Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 8 AMPERES 30 VOLTS W aveFET devices are an advanced series of pow er M O SFETs

Contextual Info: HD74LVC16240 16-bit Buffers / Line Drivers with 3-state Outputs HITACHI ADE-205-118 Z Rev.O October 1995 Description The HD74LVC16240 has sixteen inverter drivers with three state outputs in a 48 pin package.This device is a inverting buffer and has two active low enables (1G to 4G). Each enable independently controls four

Contextual Info: MOTOROLA Order this document by MMFT1N10E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor M MFT1N10E N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T

Contextual Info: MOTOROLA O rder this docum ent by M M DF2C02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2C 02H D Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors MiniM OS™ d e vice s are an ad van ced se rie s o f po w e r M O SFETs

Contextual Info: H D 7 4 L V C R 2 2 4 5 A Octal Bidirectional Transceivers with 3-state Outputs HITACHI ADE-205-235A Z Preliminary 2nd. Edition January 1999 Description The HD74LVCR2245A has eight buffers with three state outputs in a 20 pin package. When (T / R) is high, data flows from the A inputs to the B outputs, and when (T / R) is low, data flows from the B inputs

ir receiver diod

Abstract: IR3R42 IR3C02 IR3C09 28-SD IR3C07 IR3C02A IR3C08
Contextual Info: SPECIAL­ FUNCTION ICs ★ Under development • ICs for Infrared R em ote C o n tro llers 4, - Description NhMMNo. - - : . ■ — . IR3T24/N Infrared signal receiver pre-am p. Photo d io d e directly connectab le output pulse : active “ Low ”

BYW 90

Abstract: l200c 1200C dioda ZTF 160 soae
Contextual Info: STC s G S^THQMSQN Q Goaaa3M t BYW 78-50-200, R BYW 78-150 A, (R) 1H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT RENDEMENT D T 'ô 3 ~ Z I 59C 022 HIGH EFFICIENCY SUPERSWITCH

BA423

Contextual Info: blE D • bbâB^Bl DD2blb3 MST M A P X N AUER PHILIPS/DISCRETE BA423 _ SILICON A.M. BAND SWITCHING DIODE The BA 423 is a switching diode in hermetically sealed glass DO-34 envelope. Intended for band switching in a.m. radio receivers. Q U IC K R E F E R E N C E D A T A

atmel 0825 G

Abstract: atmel 0825
Contextual Info: Features • • • • • • • • • • • • • • • • • • • 8-bit Resolution 1 Gsps Min. Sampling Rate ADC Gain Adjust 2 GHz Full Power Input Bandwidth Fs = 1 Gsps, Fin = 20 MHz: – SINAD = 45 dB (7.4 Effective Bits) SFDR = 58 dBc

BA423

Contextual Info: blE D • bbâB^Bl DD2blb3 MST M A P X N AUER PHILIPS/DIS CRET E BA423 _ SILICON A.M. BAND SWITCHING DIODE The BA 423 is a switching diode in hermetically sealed glass DO-34 envelope. Intended for band switching in a.m. radio receivers. Q U IC K R E F E R E N C E D A T A

111EF

Abstract: BYW 200 diodes byw 78 100 T03A diode BYW 66 78150
Contextual Info: STC s G S^THQMSQN Q Goaaa3M t BYW 78-50-200, R BYW 78-150 A , (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 022 D T 'ô 3 ~ Z I HIGH EFFICIENCY V SUPERSWITCH

atmel 0825 G

Abstract: atmel 0825
Contextual Info: MAIN FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ 8-bit resolution. ADC gain adjust. 2 GHz full power input bandwidth. 1 Gsps min sampling rate. SINAD = 45 dB (7.4 Effective Bits) SFDR = 58 dBc @ FS = 1 Gsps, FIN = 20 MHz : SINAD = 44 dB (7.2 Effective Bits) SFDR = 56 dBc