Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX7315UA 1 310 nm FOR INTRA-OFFICE 2.5 Gb/s InGaAsP MQW-FP LASER DIODE TOSA DESCRIPTION The NX7315UA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode TOSA (transmitter optical sub-assembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFF/SFP
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NX7315UA
NX7315UA
STM-16
OC-48
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smd diode marking Z1
Abstract: BB145B BB145B-01 smd diode sod723
Text: DISCRETE SEMICONDUCTORS DATA SHEET BB145B-01 Low-voltage variable capacitance diode Product specification Supersedes data of 2002 Nov 18 2004 Mar 29 Philips Semiconductors Product specification Low-voltage variable capacitance diode FEATURES BB145B-01 PINNING
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BB145B-01
sym008
001aaa528
BB145B-01
OD723
SCA76
R77/03/pp6
smd diode marking Z1
BB145B
smd diode sod723
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BA277
Abstract: BA277-01 marking a sod723 smd diode sod723
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D749 BA277-01 Band-switching diode Product specification Supersedes data of 2001 Sep 07 2002 Oct 29 Philips Semiconductors Product specification Band-switching diode BA277-01 FEATURES PINNING • Small plastic SMD package
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M3D749
BA277-01
MAM399
SCA74
613512/02/pp8
BA277
BA277-01
marking a sod723
smd diode sod723
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TLP4592G
Abstract: photocoupler
Text: TLP4592G TOSHIBA Photocoupler Photorelay TLP4592G Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4592G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package.
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TLP4592G
TLP4592G
11-7A8
photocoupler
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11-5B2
Abstract: TLP4222G TLP4222G-2 photorelay
Text: TLP4222G,TLP4222G-2 TOSHIBA Photocoupler Photorelay TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4222G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the
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TLP4222G
TLP4222G-2
TLP4222G
11-5B2
11-5B2
TLP4222G-2
photorelay
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TLP716
Abstract: DSA0031629 inverter circuit dc to ac 5V to 1000V
Text: TLP716 Preliminary TOSHIBA Photocoupler GaAlAs IRED & Photo- IC TLP716 Digital Isolation for A/D,D/A Conversion. High Speed Line Receiver. Microprocessor System Interfaces. Plasma display panel. Unit : mm 6.8 4.58 The TOSHIBA TLP716 consists of a GaAlAs light emitting diode
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TLP716
TLP716
DSA0031629
inverter circuit dc to ac 5V to 1000V
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Untitled
Abstract: No abstract text available
Text: Application Guide Driving LEDs The first commercial Light Emitting Diode LED was introduced in the 1960’s. From its early beginnings as a low intensity red light, the LED has emerged as a highly versatile component, critical to a wide variety of applications.
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TLP4202G
Abstract: No abstract text available
Text: TLP4202G TOSHIBA Photocoupler Photorelay TLP4202G Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4202G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a SOP package. This 2-form-B NC photorelay features a withstanding voltage
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TLP4202G
TLP4202G
54SOP8)
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TLP4192G
Abstract: 11-7C1
Text: TLP4192G TOSHIBA Photocoupler Photorelay TLP4192G Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4192G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a SOP package. This 1-form-B NC photorelay features a withstanding voltage
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TLP4192G
TLP4192G
54SOP6)
11-7C1
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TLP4027G
Abstract: No abstract text available
Text: TLP4027G TOSHIBA Photocoupler Photorelay TLP4027G Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4027G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage.
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TLP4027G
TLP4027G
11-10H1
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TLP4202G
Abstract: photorelay
Text: TLP4202G TOSHIBA Photocoupler Photorelay TLP4202G Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4202G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a SOP package. This 2-form-B NC photorelay features a withstanding voltage
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TLP4202G
TLP4202G
54SOP8)
photorelay
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11-5B2
Abstract: TLP227G TLP227G-2
Text: TLP227G N ,TLP227G-2(N) TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP227G(N),TLP227G-2(N) CORDLESS TELEPHONE PBX MODEM Unit: mm TLP227G The TOSHIBA TLP227G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic DIP
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TLP227G
TLP227G-2
TLP227G
TLP227G-2
11-5B2
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TLP4192G
Abstract: photorelay
Text: TLP4192G TOSHIBA Photocoupler Photorelay TLP4192G Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4192G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a SOP package. This 1-form-B NC photorelay features a withstanding voltage
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TLP4192G
TLP4192G
54SOP6)
photorelay
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TLP4027G
Abstract: No abstract text available
Text: TLP4027G TOSHIBA Photocoupler Photorelay TLP4027G Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4027G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage.
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TLP4027G
TLP4027G
11-10H1
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Untitled
Abstract: No abstract text available
Text: TLP4172G TOSHIBA Photocoupler Photorelay TLP4172G Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4172G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a SOP package. This 1-form-B NC photorelay features a withstanding voltage
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TLP4172G
TLP4172G
54SOP4)
11-5H1
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TLP4007G
Abstract: No abstract text available
Text: TLP4007G TOSHIBA Photocoupler Photorelay TLP4007G Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4007G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage.
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TLP4007G
TLP4007G
11-10C4
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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g14 DIODE schottky marking
Abstract: GRM31CR71H475KA12L nr4018 GRM21BR71H105KA12L lt 0207 MA3591 led driver 12v only circuit diagram NR4018T220M LCPG Marking LT3591
Text: LT3591 White LED Driver with Integrated Schottky in 3mm x 2mm DFN DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Drives Up to Ten White LEDs from a 3V Supply High Side Sense Allows “One Wire Current Source” Internal Schottky Diode One Pin Dimming and Shutdown
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LT3591
100mA
LT3491
LT3497
3591f
g14 DIODE schottky marking
GRM31CR71H475KA12L
nr4018
GRM21BR71H105KA12L
lt 0207
MA3591
led driver 12v only circuit diagram
NR4018T220M
LCPG Marking
LT3591
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Untitled
Abstract: No abstract text available
Text: ASI3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The AS I3486 is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. FEATURES INCLUDE: • Replacement for HP H S C H 3486 • -56 dBm TssTypical @ 10 G Hz
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ASI3486
I3486
AS13486
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: P D - 9.1123 International ^Rectifier IRGPC50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Vces = 600V • Short circuit rated -10ps @125°C, VGe = 15V • Switching-loss rating includes all "tail" losses
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IRGPC50KD2
-10ps
T0-247AC
C-960
SS452
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C2079
Abstract: optocoupler mct2e transistor c1684 C16SE 1R10 diode C1684 C1684 transistor mct2e optocoupler Optocoupler IC MCT2E MCT2E equivalent
Text: ^ 2 J5 E O - ^ I PHOTOTRANSISTOR OPTOCOUPLER 0PT0ELECTRD8ÍC3 MCT2E PACKAGE DIMENSIONS DESCRIPTION The MCT2E is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS I 2'5 4 ! 0.40 a n o d e JT
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C2079
E90700
C129SA
optocoupler mct2e
transistor c1684
C16SE
1R10 diode
C1684
C1684 transistor
mct2e optocoupler
Optocoupler IC MCT2E
MCT2E equivalent
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Untitled
Abstract: No abstract text available
Text: DF75AA120/160 UL;E76102 M Power Diode Module D F 7 5 A A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri cally isolated from semiconductor elements for simple heatsink
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DF75AA120/160
E76102
75Amp
DF75AA
000207b
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rover
Abstract: J1000
Text: SPEb^fo. / ED-Q2Û78 , x . ISSUE Maiçh;i8,20Q2 SHARP OPTOELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. G L 100M N 0M P1M Specified for Enclosed please find copies of the Specifications which consists of 14 pages including cover.
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ED-Q2078
GL100MN0MP1M
GL100MN0MP1M
rover
J1000
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