marking v6 07 diode
Abstract: No abstract text available
Text: BAP64-02 Silicon PIN diode Rev. 8 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD523 ultra small plastic SMD package. 1.2 Features and benefits High voltage, current controlled
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BAP64-02
OD523
sym006
marking v6 07 diode
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marking v6 07 diode
Abstract: No abstract text available
Text: BAP64-03 Silicon PIN diode Rev. 7 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD323 very small plastic SMD package. 1.2 Features and benefits High voltage, current controlled
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BAP64-03
OD323
sym006
marking v6 07 diode
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Untitled
Abstract: No abstract text available
Text: BAP64-02 Silicon PIN diode Rev. 9 — 15 December 2014 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD523 ultra small plastic SMD package. 1.2 Features and benefits High voltage, current controlled
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BAP64-02
OD523
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0549H
Abstract: SNIS132D LM32A 100cjd
Text: LM32 LM32 Dual Thermal Diode Temperature Sensor with Bus Literature Number: SNIS132D LM32 October 20, 2011 Dual Thermal Diode Temperature Sensor with Bus General Description Features The LM32 is a digital temperature sensor that measures 3 temperature zones and has a single-wire interface SensorPath bus. SensorPath data is pulse width encoded, thereby
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SNIS132D
0549H
SNIS132D
LM32A
100cjd
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LM327
Abstract: LM32A 0549H LM32S 2N3904 LM32 LM32CIMT LM32CIMTX MMBT3904
Text: April 2004 LM32 Dual Thermal Diode Temperature Sensor with SensorPath Bus General Description The LM32 is a digital temperature sensor that measures 3 temperature zones and has a single-wire interface compatible with National Semiconductor’s SensorPath bus. The
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LM32s.
LM327
LM32A
0549H
LM32S
2N3904
LM32
LM32CIMT
LM32CIMTX
MMBT3904
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BAP64-02
Abstract: BAP64 NXP SMD diode MARKING CODE nxp marking code
Text: BAP64-02 Silicon PIN diode Rev. 06 — 9 January 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BAP64-02
BAP64-02
BAP64
NXP SMD diode MARKING CODE
nxp marking code
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LM327
Abstract: LM32 amd athlon PIN LAYOUT cpu fan pin data circuit in mother board 2N3904 LM32CIMT LM32CIMTX MMBT3904 21h-3Fh TRANSISTOR 1003
Text: LM32 Dual Thermal Diode Temperature Sensor with SensorPath Bus General Description The LM32 is a digital temperature sensor that measures 3 temperature zones and has a single-wire interface compatible with National Semiconductor’s SensorPath bus. SensorPath data is pulse width encoded, thereby allowing the LM32
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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92256
Abstract: 44750 7432 truth table 90087
Text: AlGaAs SPST Non-Reflective PIN Diode Switch MA4AGSW1A Rev 2.0 FEATURES • • • • Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz M/A-COM’s unique patent pending AlGaAs
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DSEP 12A
Abstract: ixys dsep 30-12AR
Text: DSEP 30-12A DSEP 30-12AR HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V 1200 1200 1200 1200 Type A C DSEP 30-12A DSEP 30-12AR TO-247 AD ISOPLUS 247TM Version A Version AR C C A A C TAB TAB A = Anode, C = Cathode
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0-12A
30-12AR
O-247
247TM
DSEP 12A
ixys dsep
30-12AR
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Untitled
Abstract: No abstract text available
Text: DSEP 30-12A DSEP 30-12AR HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V 1200 1200 1200 1200 Type A C DSEP 30-12A DSEP 30-12AR TO-247 AD ISOPLUS 247TM Version A Version AR C C A A C TAB TAB A = Anode, C = Cathode
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0-12A
30-12AR
O-247
247TM
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dse*60-06A
Abstract: 60-06A DSEI60-06A DSEI60-06AT
Text: DSEI60-06A DSEI60-06AT Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 IFAV = 60 A VRRM = 600 V trr = 35 ms Type A C TO-247 AD C DSEI 60-06A DSEI 60-06AT A C TO-268 AA (AT Type) A A C A = Anode, C = Cathode IFRMS IFAVM IFRM IFSM I2t
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DSEI60-06A
DSEI60-06AT
O-247
0-06A
60-06AT
O-268
dse*60-06A
60-06A
DSEI60-06A
DSEI60-06AT
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60-06A
Abstract: ixys dsei 60-06a
Text: DSEI 60-06A DSEI 60-06AT VRRM = 600 V IFAVM = 60 A trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 A Type C TO-247 AD C DSEI 60-06A DSEI 60-06AT C A TO-268 AA (AT Type) A A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM ①
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0-06A
60-06AT
O-247
O-268
60-06A
ixys dsei 60-06a
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LM40s
Abstract: amd athlon PIN LAYOUT 2N3904 LM40 LM40CIMT LM40CIMTX MMBT3904 0549H LM407
Text: LM40 Hardware Monitor with Dual Thermal Diodes and SensorPath Bus General Description The LM40 is a hardware monitor that measures 3 temperature zones, 5 voltages and has a single-wire interface compatible with National Semiconductor’s SensorPath bus. SensorPath data is pulse width encoded, thereby allowing the
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diode 0549
Abstract: buck-boost chopper FII30-12E induction heat resonant
Text: FII 30-12E NPT3 IGBT IC25 = 33 A = 1200 V VCES VCE sat typ = 2.4 V Phaseleg Topology in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features Maximum Ratings VCES TVJ = 25°C to 150°C 1200 VGES TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH
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30-12E
FII30-12E
diode 0549
buck-boost chopper
FII30-12E
induction heat resonant
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diode 0549
Abstract: FII30-12E induction heat resonant
Text: FII 30-12E NPT3 IGBT IC25 = 33 A = 1200 V VCES VCE sat typ = 2.4 V Phaseleg Topology in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C
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30-12E
FII30-12E
diode 0549
FII30-12E
induction heat resonant
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25N120
Abstract: 25N120 ixys
Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C
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25N120
25N120D1
O-247
25N120
25N120 ixys
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IC IGBT 25N120
Abstract: 25N120 25n120 IGBT IXEH 25N120D1 25N120D 25N120 ixys 25N120D1 FII30-12E
Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C
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25N120
25N120D1
O-247
IC IGBT 25N120
25N120
25n120 IGBT
IXEH 25N120D1
25N120D
25N120 ixys
25N120D1
FII30-12E
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IC IGBT 25N120
Abstract: 25n120 IGBT 25N120 .25N12 25N120D1 FII30-12E 25N120D 25N12
Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C
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25N120
25N120D1
O-247
IC IGBT 25N120
25n120 IGBT
25N120
.25N12
25N120D1
FII30-12E
25N120D
25N12
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bap64-03
Abstract: lm 9805 DIODE ED 99
Text: DISCRETE SEMICONDUCTORS Æm SIHIEET BAP64-03 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-03 PINNING FEATURES • High voltage, curre n t controlled.
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BAP64-03
BAP64-03
lm 9805
DIODE ED 99
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BAP64-05
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Æm SIHIEET BAP64-05 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-05 PINNING FEATURES • High voltage, curre n t controlled.
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BAP64-05
BAP64-05
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BAP64-02
Abstract: v 817 y
Text: DISCRETE SEMICONDUCTORS Æ m SIHIEET BAP64-02 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-02 PINNING FEATURES • High voltage, curre n t controlled.
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BAP64-02
BAP64-02
MAM405
v 817 y
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Resistor MSB 124
Abstract: RK738 RK 0313 asea resistor 5245 Resistor MSB 54 RRMH ASEA Rod Resistors asea pin terminal asea time-lag relay RI RRMH
Text: Catalogue RK 7 8 -2 E RELAY COM PONENTS STUD-TYPE RTLF stud-type diode, p. 1 RTNK sho rt-circuitin g com p orten , p. 2 MRB, MSB stud-type resistors, pages 2, 3 MSTA, MSTB therm istors, p. 4 Accessories, p. 5 Plug-in type relay com ponents, oil-fille d capa
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APPAR11
Resistor MSB 124
RK738
RK 0313
asea resistor 5245
Resistor MSB 54
RRMH ASEA
Rod Resistors
asea pin terminal
asea time-lag relay RI
RRMH
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diode c552
Abstract: G0551 IRGDDN200M12 IGBT 200A 1200V G-549
Text: Ife g g jig g i^ B jK e c n n e r IR G D D N 2 0 0 M Î2 iR O R P N g n n M ig "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 1200V *c = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated
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IRGDDN200M12
IRGRDN200M12
100nH
D02G344
diode c552
G0551
IGBT 200A 1200V
G-549
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