diode 07C
Abstract: No abstract text available
Text: SUM60N08-07C New Product Vishay Siliconix N-Channel 75-V D-S MOSFET with Current Sensing Diode FEATURES D TrenchFETr Power MOSFET Plus Current Sensing Diode D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V
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SUM60N08-07C
S-20173--Rev.
18-Mar-02
diode 07C
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5SDF11H4505
Abstract: Abb diode 6000 A high power igct abb FR 306 Diode
Text: PRELIMINARY 5SDF 11H4505 5SDF 11H4505 Old part no. DC 889-1100-45 Fast Recovery Diode Properties Optimized soft recovery characteristics Enhanced Safe Operating Area Industry standard housing Cosmic radiation withstand rating Applications Key Parameters V RRM
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11H4505
1768/138a,
DC/249/07c
May-11
5SDF11H4505
Abb diode 6000 A
high power igct abb
FR 306 Diode
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SUM60N08-07C
Abstract: S-03076
Text: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES D TrenchFETr Power MOSFET Plus Current Sense D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 60a APPLICATIONS
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SUM60N08-07C
S-03076--Rev.
03-Feb-03
SUM60N08-07C
S-03076
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SUM60N08-07C
Abstract: Active resistance mosfet current mirror
Text: SUM60N08-07C New Product Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES D TrenchFETr Power MOSFET Plus Current Sense D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 60a APPLICATIONS
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SUM60N08-07C
S-20557--Rev.
22-Apr-02
SUM60N08-07C
Active resistance
mosfet current mirror
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Untitled
Abstract: No abstract text available
Text: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES D TrenchFETr Power MOSFET Plus Current Sense D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 60a APPLICATIONS
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SUM60N08-07C
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.007 at VGS = 10 V 60a • TrenchFET Power MOSFET Plus Current Sense • Low Thermal Resistance Package Available
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SUM60N08-07C
SUM60N08-07C
SUM60N08-07C-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES D TrenchFETr Power MOSFET Plus Current Sense D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 60a APPLICATIONS
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SUM60N08-07C
08-Apr-05
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SUM60N08-07C
Abstract: No abstract text available
Text: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.007 at VGS = 10 V 60a • TrenchFET Power MOSFET Plus Current Sense • Low Thermal Resistance Package Available
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SUM60N08-07C
SUM60N08-07C-E3
18-Jul-08
SUM60N08-07C
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Untitled
Abstract: No abstract text available
Text: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.007 at VGS = 10 V 60a • TrenchFET Power MOSFET Plus Current Sense • Low Thermal Resistance Package Available
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SUM60N08-07C
SUM60N08-07C
SUM60N08-07C-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.007 at VGS = 10 V 60a • TrenchFET Power MOSFET Plus Current Sense • Low Thermal Resistance Package Available
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SUM60N08-07C
SUM60N08-07C
SUM60N08-07C-E3
11-Mar-11
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SUM60N08-07C
Abstract: n-channel, 75v, 60a
Text: SPICE Device Model SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM60N08-07C
0-to-10V
08-Jul-02
SUM60N08-07C
n-channel, 75v, 60a
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SUM60N08-07C SPICE Device Model
Abstract: SUM60N08-07C
Text: SPICE Device Model SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Current Sense Terminal CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM60N08-07C
S-62307Rev.
27-Nov-06
SUM60N08-07C SPICE Device Model
SUM60N08-07C
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SUM60N08-07C
Abstract: SUM60N08-07C SPICE Device Model
Text: SPICE Device Model SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Current Sense Terminal CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM60N08-07C
18-Jul-08
SUM60N08-07C
SUM60N08-07C SPICE Device Model
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Transistor AND DIODE Equivalent list
Abstract: Transistor Equivalent list 8ch pnp DARLINGTON TRANSISTOR ARRAY pnp Octal Darlington Transistor Arrays equivalent transistor 2sk 2SK1078 TD62783 equivalent TD62783 TD62504 equivalent pnp DARLINGTON TRANSISTOR ARRAY
Text: [ 2 ] Product List [ 2 ] Product List 1. S-Drivers new product (9 series, 9 devices) TD62 S X X X A FM Package Output withstand voltage (A: 50 V) Input H/L (odd number: Low) Output current (0.5 A/0.1 A) 0: Sink current output 3: Source current output 6: Push-pull output
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2SA1203
HSOP16
TD62M8604AF
2SA1680
Transistor AND DIODE Equivalent list
Transistor Equivalent list
8ch pnp DARLINGTON TRANSISTOR ARRAY
pnp Octal Darlington Transistor Arrays
equivalent transistor 2sk
2SK1078
TD62783 equivalent
TD62783
TD62504 equivalent
pnp DARLINGTON TRANSISTOR ARRAY
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Untitled
Abstract: No abstract text available
Text: _ 3B69720 GENERAL DIODE CORP _ 07C00256 D -r . y t GENERAL DIODE CORP □? D E ^ 3 0 ^ 7 2 0 000055b 1 | SILICON PNP - Power Transistors TYPE MO. MAX. COLL. H MAX. EHSS. A THERMAL X. M RES. Fim iM Ctm i T A» te C m #25* C E M rtyw
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3B69720
07C00256
000055b
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MD14
Abstract: TRM6014 TRM6505 TRL2005 TRM5014S TRM5504 TRM6504 TRM7014 TRM8014 TRW201
Text: 3869720 GENERAL DIODE CORP '_ 07C 0 0 2 5 3_ D GENERAL DIODE CORP 07 DE |3ÛL.ci720 0000E53 b SILICON N P N -P o w e r Transistors TYPE NO. MAX. THERMAL RES. Junction lo Case 9,« MAX. COLL. DISS. in Fiee All 0 2 5 'C Pe ABSOLUTE MAX. RATINGS $ 2 5 'C.
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0000E53
TRM5014S
TRM5504
TRM6014
MD-14
TRM4015
TRM4015S
TRM4505
MD14
TRM6505
TRL2005
TRM6504
TRM7014
TRM8014
TRW201
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TRS-4405S
Abstract: MD14 TRS-3605S TRS-4015S TRS-4805S TRS-5205S TRS-5405S IMD14 480 to-5
Text: 386972a GENERAL DIODE CDRP_ 07C 00252 D T-33-o GENERAL DIODE CORP ~ 0? D E | 3 f i b T ? S D 0 D Q 0 E S a 4 | SILICON NPN-Power Transistors TYPE NO. MAX. THERMAL RES. Junction to C u e * * re/ *) TRS-3M5S 17.5 MAX. ABSOLUTE MAX. RATINGS £ 2 5 ' C.
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386972a
0000E5H
TRS-3605S
MD-14
TRS-3742
MO-14
TRS-4015S
TRM3014
TRM3014S
TRM3504
TRS-4405S
MD14
TRS-4805S
TRS-5205S
TRS-5405S
IMD14
480 to-5
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TRS601
Abstract: No abstract text available
Text: 3869720 GENERAL DIODE CORF ¿3 GTS C 07C 00250 D 7- 33 -^/ _ mLaondacto%± GENERAL DIODE CORP ~ 07 DE | 3öb17aD DDDOaSD 0 100 Ea m e s Stre e t < 6 1 7 J Ï7 2 -7 5 2 0 F r a m in g h a m , M a ss a c h u se t ts 0 1 7 0 1 SILICON NPN - Power Transistors
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b17aD
TRS601
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C0034
Abstract: 0C70 APS1000 u0440 K045
Text: APS1000 SERIES SURFACE MOUNT SILICON PIN SWITCHING DIODE DESCRIPTION: PACKAGE STYLE SOT-23 SILICON PIN SWITCHING DIODE IN A SOT-23 PACKAGE MILUMETERS DIM A Absolute Maximum Ratings 1 V P.D. 100MA AS SHOWN 250mW @ TC=25°C MIN 28C MAX 3.04 INCHES MIN 01102
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APS1000
OT-23
OT-23
100MA
250mW
0CC40
C0034
0CS84
100MHz
0C70
u0440
K045
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T1IS
Abstract: 60 amp 600 Volt Diode 2S05 Diode TRS3015 MD14 TRS-3204S TRS-3604S TRS-4014S TRS-4404S TRS-5204S
Text: 3869720 GENERAL'DIODE CORP GENERAL DIODE CORP 07C 00251 D -7”- 3 3 t£ / Dif| 3 0 ^ 7 8 0 DD0D551 5 07 SILICON NPN* Power Transistors TYPE NO. TRS-3204S tc MAX. COLL. OISS. HI Fit« Ah #25*C P« rc/D M U ) MAX. THERMAL RES. Janetion lo C t u I7.S ABSOLUT :MAX. RATINGS #2S* C.
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TRS-3204S
TRS-3604S
TRS-4014S
MO-14
TRS-5755
MD-14
TRS4015
TRS-6505
T1IS
60 amp 600 Volt Diode
2S05 Diode
TRS3015
MD14
TRS-4404S
TRS-5204S
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H11L2
Abstract: H11L H11L3 25CC H11L1 st2015
Text: MICROPROCESSOR COMPATIBLE GaAs SCHMITT TRIGGER OPTOCOUPLERS OPTOELEETBOHlCS H11L1 H11L2 H11L3 PACKAGE DIMENSIONS DESCRIPTION The H11L series has a medium-to-hlgh speed integrated circuit detector optically coupled to a gallium-arsenide infrared emitting diode. The output incorporates a
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H11L1
H11L2
H11L3
ST1603
ST2015
ST2018
H11L
25CC
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2N3743
Abstract: 2N4930 2N4931 2N5096 2N5282
Text: 3869720 G EN ER A L ' O I D D E CORP 07C 0 02 54 GENERAL DIODE CORP 07 D -p-33 - DE | 301^750 DDODSSM Ö | ~ SILICON N P N - Power Transistors rvP E i, M AX . TH ER M AL ;s Junction lo Cáse M AX. C O LL. DI SS. t< net A li 925* C A B S O L U T E M A X . R A T IN G S { » ' C .
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-p-33
lcs50MA
trm7015
MD-14
trm7505
MO-14
trm8015
TRSP3014S
TRSP3504
TRSP3514S
2N3743
2N4930
2N4931
2N5096
2N5282
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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Untitled
Abstract: No abstract text available
Text: P D - 9 .1 6 1 0 A International IO R Rectifier IRFR/U5505 PRELIMINARY HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR5505 • Straight Lead (IRFU5505) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated
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IRFR/U5505
IRFR5505)
IRFU5505)
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