freewheeling diode application note
Abstract: SCHAFFNER VFBD MC33185 MC33185D2T
Text: MOTOROLA MC33185 SEMICONDUCTOR TECHNICAL DATA SINGLE LOW SIDE DRIVER Product Preview Single Low Side Driver with Integrated Freewheeling Diode and Output dv/dt & di/dt Control SILICON MONOLITHIC INTEGRATED CIRCUIT The Short-circuit Protected Low Side Driver will be used for PWM
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MC33185
freewheeling diode application note
SCHAFFNER
VFBD
MC33185
MC33185D2T
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freewheeling diode application note
Abstract: MC33185 MC33185D2T CURRENT LIMITING LOW SIDE DRIVER
Text: MOTOROLA MC33185 SEMICONDUCTOR TECHNICAL DATA SINGLE LOW SIDE DRIVER Product Preview Single Low Side Driver with Integrated Freewheeling Diode and Output dv/dt & di/dt Control SILICON MONOLITHIC INTEGRATED CIRCUIT The Short-circuit Protected Low Side Driver will be used for PWM
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MC33185
freewheeling diode application note
MC33185
MC33185D2T
CURRENT LIMITING LOW SIDE DRIVER
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TIRM01
Abstract: vishay transistor databook
Text: Vishay Telefunken Physical Explanation Differential resistance See forward resistance, differential General Terminology Semiconductor diodes are used as rectifiers, switchers, varactors and voltage stabilizers see Zener Databook . Semiconductor diodes are two-terminal solid-state
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Untitled
Abstract: No abstract text available
Text: Vishay Semiconductors Physical Explanation Differential resistance See forward resistance, differential General Terminology Semiconductor diodes are used as rectifiers, switchers, varactors and voltage stabilizers see Zener Databook . Semiconductor diodes are two-terminal solid-state
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Untitled
Abstract: No abstract text available
Text: VISHAY Vishay Semiconductors Physical Explanation General Terminology Semiconductor diodes are used as rectifiers, switchers, varactors and voltage stabilizers see Zener Databook . Semiconductor diodes are two-terminal solid-state devices having asymmetrical voltage-current characteristics. Unless otherwise stated, this means a
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07-Jan-03
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BERULUB FR 16 B
Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power
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IXBH40N160,
BERULUB FR 16 B
circuit diagram of 5kw smps full bridge
thyristor aeg
UC3854 5kw
harmer simmons
BERULUB FR 16
Grease Berulub FR 16
Berulub FR 66
5kw smps pfc
ups PURE SINE WAVE schematic diagram
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DIODE 1N4001
Abstract: 1n4001 diode 1N4001 SMT 100nF Kondensator Rm2 tr1 Kondensator 1206 spannungsregler 7805 VR1 7805 1N4001* diode MAX202
Text: Infosheet PROBOsc12 Version1.1 Dr. Erik Lins http://www.lins.de erik@lins.de PROBOsc12 PROBOsc12 ist ein einfaches Prototypboard für den IPC@CHIP SC12/SC13 der Firma Beck-IPC GmbH im Einfach-Europakarten Format 100x160mm² . Auf einer Hälfte der Karte (80x100mm²) sind folgende Komponenten integriert:
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PROBOsc12
PROBOsc12
SC12/SC13
100x160mm²
80x100mm²
RS232
10/100MBit
PCF8583
DIODE 1N4001
1n4001 diode
1N4001 SMT
100nF Kondensator
Rm2 tr1
Kondensator 1206
spannungsregler 7805
VR1 7805
1N4001* diode
MAX202
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MKS 1858-6-0-808
Abstract: circuit diagram of smps 220v Rubycon 400V 100uF capacitor NTC16 8 dip smps ic l6565 trafo 2kv flyback transformer eldor trafo 1a L6565 rubycon yxf
Text: AN1376 APPLICATION NOTE 25W QUASI-RESONANT FLYBACK CONVERTER FOR SET-TOP BOX APPLICATION USING THE L6565 by Claudio Spini This document describes a reference design of a 25W Switch Mode Power Supply dedicated to Set-Top Box application. The board accepts full range input voltage 90 to 265Vrms and delivers 5 outputs. It
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AN1376
L6565
265Vrms)
L6565,
MKS 1858-6-0-808
circuit diagram of smps 220v
Rubycon 400V 100uF capacitor
NTC16
8 dip smps ic l6565
trafo 2kv
flyback transformer eldor
trafo 1a
L6565
rubycon yxf
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D5L60
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode Wtm OUTLINE D5L60 600V 5A Feature • rüIitEEFRD • trr=50ns • Z> lÆ-JUK • High Voltage Super FRD • trr=50ns • « lI Î E 1 . 5 k V « |Œ • Full Molded • Dielectric Strength 1,5kV • PFC • PFC Power Factor Correction)
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D5L60
D5L60
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode Wtm SF5S6 60V OUTLINE A K g IB M Feature • Tj=150°C • Tj=150°C • P R R S M T ’A ' i ^ V Î ' I ' K i E • P rrsm • 71 [ Æ - J U K • Full Molded • « lI Î E 1 . 5 k V « E • Dielectric Strength 1,5kV
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J533
Abstract: 5KV fast recovery DIODE
Text: Super Fast Recovery Diode Single Diode Wtm D3L60 OUTLINE 600V 3A Feature • rüIitEEFRD • High V oltage S u p er FRD • trr=50ns • trr= 5 0 n s • Z> lÆ -JU K • Full M o ld e d • « lIÎ E 1 .5 k V « |Œ • D ielectric S tre n g th 1,5kV • PFC
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D3L60
J533
5KV fast recovery DIODE
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SG10SC6
Abstract: SG10SC6M FTO-220G L50Hz SG10S G10SC6M
Text: Schottky Barrier Diode Twin Diode mtm SG10SC6M OUTLINE 60 V 10 A Feature • Tj=175°C • Tj=175°C • P R R S M ^ A '^ V Î / l f f i l Œ • P rrsm • 711^-11 F Rating • Full Molded • ÎË iB IÎŒ 1 .5 k V ffilI • Dielectric Strength 1,5kV • D C /D C
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SG10SC6M
FTO-220G
50Hz-C
SG10SC6
SG10SC6M
FTO-220G
L50Hz
SG10S
G10SC6M
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SG10SC6
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE SG10SC6M 60 V 10 A Feature • T j= 1 5 0 t: • T j= 1 5 0 °C • P rrs m T l K r j y i s x f ä M . • P r r s m Rating • Full M o ld e d •¡S ê λ Œ 1 .5 k V < £ fiI • Dielectric Strength 1,5kV • 7
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SG10SC6M
251/unless
6-88-y
SG10SC6
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AN9304
Abstract: sp721 T4KV
Text: von Protection Circuits Electronic Protection Array for ESD SP721 The SP721 is an array of SCR/Diode bipolar structures for ESD and over-voltage protection to sensitive input circuits. The SP721 has 2 protection SCR/Diode device structures per input. There are a total of
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SP721
SP721
AN9304
T4KV
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sp723
Abstract: No abstract text available
Text: SP723 The SP723 is an array of SCR/Diode bipolar structures for ESD and overvoltage protection of sensitive input circuits. The SP723 has 2 protection SCR/Diode device structures per input. There are a total of 6 available inputs that can be used to protect up to 6 external signal or bus
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SP723
SP723
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SW10CXC22C
Abstract: No abstract text available
Text: ÙJESTCODE SEMICONDUCTORS 3«iE D • ^70^55 00Qg5b3 ^ ■ U E S B t^ ^ ;, 2 3 WESTCODE SEMICONDUCTORS Capsule Rectifier Diode Consists of a diffused silicon element mounted in an hermetic ceramic cold welded capsule. Available in industry standard and thin housings.
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00Qg5b3
SWxxC/DXC22C
SW10CXC22C
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SW24CXC20C
Abstract: No abstract text available
Text: lilESTCODE 4bE » SEMICONDUCTORS ih iI M J ITD'J'ISS 0D02b71 b34 « I iIESB DE SEMICONDUCTORS SW xxC/DXC20C - 0 ' 1 - 2 3 Capsule Rectifier Diode Consists of a diffused silicon element mounted in an hermetic ceramic cold welded capsule, Available in industry standard and
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0D02b71
SWxxC/DXC20C
SW24CXC20C
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WESTCODE SW
Abstract: AIVR SW30CXC930 cl6000 westcode r 220
Text: WE S T C ODE SEMICONDUCTORS 31E D • ‘I T O ' H S S 00QSS73 1 ■ ÜIESB WESTCODE SEMICONDUCTORS Capsule Rectifier Diode Consists of a diffused silicon element mounted in an hermetic ceram ic cold welded capsule. Available in industry standard and thin housings.
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00QSS73
SWxxC/DXC930
WESTCODE SW
AIVR
SW30CXC930
cl6000
westcode r 220
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10160
Abstract: SW10CXC27C 200AD westcode ct
Text: lilESTCODE SEMICONDUCTORS 3TE D • 'H D'H SS D DD B Sb S B ■ UESB WESTCODE SEMICONDUCTORS ZZ «™ Capsule Rectifier Diode Consists of a diffused silicon elem ent mounted in an hermetic ceram ic cold welded capsule. Available in industry standard and
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SWxxC/DXC27C
299688E-03
045386E-05
998218E-04
10160
SW10CXC27C
200AD
westcode ct
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SW10CXC32C
Abstract: w011
Text: lilESTCODE SE M I CO N D UC TO R S 3TE V m «ITDnSS ÜOOESbT ÜIESB7 ^ o l - £ 3 T • 1AIESTCODE SEMICONDUCTORS Capsule Rectifier Diode Consists of a diffused silicon element mounted in an hermetic ceramic cold welded capsule. Available in industry standard and
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c17DcnSS
SW10CXC32C
w011
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tcm1520ap
Abstract: D2860 520a
Text: TCM 1520A RING DETECTOR D2860, OCTOBER 1984-REVISED DECEMBER 1990 On-Chip 150-V Bridge Diode Configuration D OR P PACKAGE TOP VIEW Reliable BIDFETt Technology AC INPUT L 1 U INVERTING OUTPUT C 2 COM M ON C 3 High Standby Impedance . . . 1 Mfi Typ Efficient High-Voltage Operation
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D2860,
1984-REVISED
tcm1520ap
D2860
520a
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Untitled
Abstract: No abstract text available
Text: fH »HARRIS S E M I C O N D U C T O R C MD B7 mpm / \J Electronic Protection Array for ESD and Overvoltage Protection August 1993 Features Description • ±2A Peak Current Capability The SP720 is an array of SCR/Diode bipolar structures for ESD and over-voltage protection to sensitive input circuits.
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SP720
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SW26CXC445
Abstract: No abstract text available
Text: UESTCODE SEMICONDUCTORS • 3TE D . ■ ‘ìTO'HSS 0D02SS3 b ■ WESB /~oi ■sS - WESTCODE SEMICONDUCTORS Capsule Rectifier Diode C o n s is t s o f a d iffu s e d s ilic o n e le m e n t m o u n te d in a n h e rm e tic c e r a m ic c o ld w e ld e d c a p s u le .
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0D02SS3
SW26CXC445
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tf 044
Abstract: SW20CXC11C ASK 800
Text: UESTCODE SEMICONDUCTORS 3TE J> WM =570^55 0002557 3 • Ü I E S B ^ - ^ . ^ WESTCODE SEMICONDUCTORS «»»» Capsule Rectifier Diode C o n s i s t s o f a d if f u s e d s ilic o n e le m e n t m o u n t e d in a n h e r m e t ic c e r a m ic c o ld w e ld e d c a p s u le .
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