ixys dsei 2x30
Abstract: DSEI IXYS 2x31 IXYS DSEI 2 DSEI 20-01 A
Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 1000 1000 IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 30-10P DSEI 2x 31-10P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM
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30-10P
31-10P
ixys dsei 2x30
DSEI IXYS 2x31
IXYS DSEI 2
DSEI 20-01 A
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Untitled
Abstract: No abstract text available
Text: P 1000 A.P 1000 S power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 0, Axial lead diode Standard silicon rectifier diodes P 1000 A.P 1000 S ; = 4
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P1000S
Abstract: P1000 P1000J P1000K diode rectifier p 600
Text: P 1000 A.P 1000 S Type Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage IF = - A IR = - A IRR = - A Axial lead diode Standard silicon rectifier diodes P 1000 A.P 1000 S Forward Current: 10 A Reverse Voltage: 50 to 1200 V
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P-600
P1000S
P1000
P1000J
P1000K
diode rectifier p 600
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dsei 30-10A
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED DSEI 30 VRSM A 1000 1000 Type C ISOPLUS 247TM TO-247 AD Version A Version AR V 1000 1000 DSEI 30-10A DSEI 30-10AR C C A A C (TAB) A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM
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247TM
O-247
0-10A
30-10AR
dsei 30-10A
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30-10AR
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED DSEI 30 VRSM A 1000 1000 Type C ISOPLUS 247TM TO-247 AD Version A Version AR V 1000 1000 DSEI 30-10A DSEI 30-10AR C C A A C (TAB) A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM
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247TM
O-247
0-10A
30-10AR
30-10AR
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DSEI2*61-12
Abstract: dsei 2x60
Text: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAVM = 2x60 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 61-10P D5 Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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61-10P
DSEI2x61-12P
DSEI2*61-12
dsei 2x60
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Untitled
Abstract: No abstract text available
Text: RURG80100 November 2013 Data Sheet 80 A, 1000 V, Ultrafast Diode Features • Ultrafast Recovery trr = 200 ns @ IF = 80 A • Max Forward Voltage, VF = 1.9 V (@ TC = 25°C) Description • 1000 V Reverse Voltage and High Reliability The RURG80100 is an ultrafast diode with low forward
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RURG80100
RURG80100
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dsei 2x60
Abstract: IXYS DSEI 2X61 IXYS DSEI 2 ixys dsei IXYS DSEI 2X
Text: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAVM = 2x60 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 61-10P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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61-10P
dsei 2x60
IXYS DSEI 2X61
IXYS DSEI 2
ixys dsei
IXYS DSEI 2X
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SWITCH 10P
Abstract: ixys dsei 2x30
Text: DSEI 2x31-10P IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 Type DSEI 2x 31-10P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x31-10P
31-10P
20070731a
SWITCH 10P
ixys dsei 2x30
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ixys dsei 12-10a
Abstract: 24A12 IXYS 12-10A diode 6A 1000v
Text: DSEI 12-10A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAV = 12 A VRRM = 1000 V trr = 50 s Type A C TO-220 AC C A DSEI 12-10A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5
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2-10A
O-220
ixys dsei 12-10a
24A12
IXYS 12-10A
diode 6A 1000v
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600v 10A ultra fast recovery diode
Abstract: HUR20100CT fast recovery diode 600v 12A HUR20120CT fast recovery diode 600v 5A
Text: HUR20100CT, HUR20120CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR20100CT HUR20120CT Symbol VRRM V 1000 1200 Test Conditions IFRMS IFAVM
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HUR20100CT,
HUR20120CT
O-220AB
HUR20100CT
115oC;
180uH
10kHz;
25oCg.
600v 10A ultra fast recovery diode
HUR20100CT
fast recovery diode 600v 12A
HUR20120CT
fast recovery diode 600v 5A
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sonic cleaner
Abstract: HUR30100PT HUR30120PT
Text: HUR30100PT, HUR30120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR30100PT HUR30120PT Symbol VRRM V 1000 1200 Test Conditions IFRMS IFAVM
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HUR30100PT,
HUR30120PT
O-247AD
HUR30100PT
180uH
10kHz;
sonic cleaner
HUR30100PT
HUR30120PT
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17n100a
Abstract: NC2030 17N100AU1
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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N100U1
N100AU1
17N100U1
17N100AU1
17n100a
NC2030
17N100AU1
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600v 10A ultra fast recovery diode
Abstract: fast recovery diode 600v 12A HUR20100CT 10A, 100v fast recovery diode 10a ultra fast diode HUR20120CT fast recovery diode 600v 5A ultra fast recovery time diode
Text: HUR20100CT, HUR20120CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR20100CT HUR20120CT Symbol VRRM V 1000 1200 Test Conditions IFRMS IFAVM
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HUR20100CT,
HUR20120CT
O-220AB
HUR20100CT
180uH
10kHz;
54Dynamic
600v 10A ultra fast recovery diode
fast recovery diode 600v 12A
HUR20100CT
10A, 100v fast recovery diode
10a ultra fast diode
HUR20120CT
fast recovery diode 600v 5A
ultra fast recovery time diode
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HUR60100PT
Abstract: HUR60120PT 600v 30A fast recovery diode diode k 0368
Text: HUR60100PT, HUR60120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR60100PT HUR60120PT Symbol VRRM V 1000 1200 Test Conditions IFRMS IFAVM
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HUR60100PT,
HUR60120PT
O-247AD
HUR60100PT
180uH
10kHz;
HUR60100PT
HUR60120PT
600v 30A fast recovery diode
diode k 0368
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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N100U1
N100AU1
17N100U1
17N100AU1
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10N100U1
Abstract: RG150
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES I C25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ
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N100U1
N100AU1
10N100U1
10N100AU1
10N100U1
RG150
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A V 1000 VRRM Type C IFAVM = 60 A VRRM = 1000 V = 35 ns trr TO-247 AD V 1000 C DSEI 60-10A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 60°C; rectangular, d = 0.5
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O-247
0-10A
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fast recovery diode 600v 5A
Abstract: HUR30100PT HUR30120PT
Text: HUR30100PT, HUR30120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR30100PT HUR30120PT Symbol VRRM V 1000 1200 Test Conditions IFRMS IFAVM
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HUR30100PT,
HUR30120PT
O-247AD
HUR30100PT
125oC;
180uH
10kHz;
fast recovery diode 600v 5A
HUR30100PT
HUR30120PT
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HUR60100PT
Abstract: HUR60120PT 100V 60A Diode
Text: HUR60100PT, HUR60120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR60100PT HUR60120PT Symbol VRRM V 1000 1200 Test Conditions IFRMS IFAVM
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HUR60100PT,
HUR60120PT
O-247AD
HUR60100PT
115oC;
180uH
10kHz;
HUR60100PT
HUR60120PT
100V 60A Diode
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A V 1000 VRRM Type C IFAVM = 60 A VRRM = 1000 V trr = 35 ns TO-247 AD V 1000 C DSEI 60-10A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 60°C; rectangular, d = 0.5
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O-247
0-10A
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ixgh 1500
Abstract: 17N100U1 17N100AU1 AC motor speed control 17n10
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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N100U1
N100AU1
17N100AU1
17N100U1
ixgh 1500
17N100U1
17N100AU1
AC motor speed control
17n10
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diode 474 b
Abstract: No abstract text available
Text: 5EMIKR0N SKiiP 1092 G B 170 - 474 CTV Absolute Maximum Ratings Symbol |Conditions n Values Units 1700 1200 1000 - 4 0 . + 150 4000 1000 2000 8600 374 V V A °C V A A A kA2s IGBT & Inverse Diode V ces Vcc 91 lc T j3> Vted 4 If Ifm Ifsm f t Diode) Operating D C link voltage
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OCR Scan
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D 819
Abstract: No abstract text available
Text: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V
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12N100U1
12N100AU1
24SBSC
T0-247
D 819
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