YG225D8
Abstract: power Diode 800V 10A DIODE 10a 800v
Text: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2
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YG225C8
13Min
SC-67
YG225C8
YG225N8
YG225D8
YG225D8
power Diode 800V 10A
DIODE 10a 800v
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WF-260
Abstract: No abstract text available
Text: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0
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YG225C8
13Min
SC-67
YG225N8
YG225D8
WF-260
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DIODE 10a 800v
Abstract: YG225D8 power Diode 800V 10A YG225C8 YG225N8 N8 Diode
Text: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0
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YG225C8
13Min
SC-67
YG225C8
YG225N8
YG225D8
DIODE 10a 800v
YG225D8
power Diode 800V 10A
YG225N8
N8 Diode
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Untitled
Abstract: No abstract text available
Text: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0
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YG225C8
13Min
SC-67
YG225N8
YG225D8
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S10VT80
Abstract: high Forward Voltage Diode
Text: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S10VT80 Case : 2F: SVT Case Unit : mm 800V 10A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION
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S10VT80
S10VTx
S10VT80
high Forward Voltage Diode
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DIODE 10a 800v
Abstract: S10VTA80
Text: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S10VTA80 CaseCase : 2F: SVTA Unit : mm 800V 10A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ● High IFSM ● Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION
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S10VTA80
DIODE 10a 800v
S10VTA80
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Untitled
Abstract: No abstract text available
Text: APT10SCD120BCT 1200V 10A Zero Recovery Silicon Carbide Schottky Diode BCT T O PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times (trr) • Higher Reliability Systems
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APT10SCD120BCT
O-247
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Untitled
Abstract: No abstract text available
Text: APT10SCD120B 1200V, 10A Zero Recovery and Ultra Low Leakage SiC Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems
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APT10SCD120B
O-247
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Untitled
Abstract: No abstract text available
Text: APT10SCE170B 1700V 10A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems • Popular TO-247 Package
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APT10SCE170B
O-247
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Untitled
Abstract: No abstract text available
Text: Bulletin I2166 rev. B 09/05 SAFEIR Series 8EWS.SPbF SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Lead-Free "PbF" suffix IFSM = 200A < 1V @ 10A VRRM = 800V, 1200V Description/ Features The 8EWS.SPbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with
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I2166
08-Mar-07
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8EWS12S
Abstract: AN-994 8ews08spbf
Text: Bulletin I2166 rev. B 09/05 SAFEIR Series 8EWS.SPbF SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Lead-Free "PbF" suffix IFSM = 200A < 1V @ 10A VRRM = 800V, 1200V Description/ Features The 8EWS.SPbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with
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I2166
12-Mar-07
8EWS12S
AN-994
8ews08spbf
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A three-phase diode bridge rectifier datasheet
Abstract: 8EWS12S AN-994 8ews08spbf SINGLE-PHASE SILICON BRIDGE RECTIFIER 8A
Text: Bulletin I2166 rev. B 09/05 SAFEIR Series 8EWS.SPbF SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Lead-Free "PbF" suffix IFSM = 200A < 1V @ 10A VRRM = 800V, 1200V Description/ Features The 8EWS.SPbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with
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I2166
A three-phase diode bridge rectifier datasheet
8EWS12S
AN-994
8ews08spbf
SINGLE-PHASE SILICON BRIDGE RECTIFIER 8A
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA IXFA IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P VDSS ID25 TO-220AB (IXFP) TO-3P (IXFQ) RDS(on) trr G G D S S G D (TAB) DS = 800V = 10A Ω ≤ 1.1Ω
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IXFA10N80P
IXFP10N80P
IXFQ10N80P
IXFH10N80P
O-220AB
O-263
250ns
O-247
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Untitled
Abstract: No abstract text available
Text: 3 Phase Bridge Diode Diode Module O U T L IN E D IM E N S IO N S S10VTD/S10VTAD 800V 10A U n it • m m i&fiUAiOo <*[& *>]- Kîîëfdlmaxx*1.6 ?+o f S10VTA type has solid w ire lead terminals. ( l l MAXX fJl,6) • RATING S A b so lu te Maximum R a tin g s
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S10VTD/S10VTAD
S10VTA
S10VT60,
S10VT80,
S10VTA80
S10VTA60
S10VT80
SI0VT60
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10ETS
Abstract: 10ETS08 10ETS12 10ETS16
Text: Bulletin I2120 rev. A 07/97 SAFEIR Series 10ETS. INPUT RECTIFIER DIODE VF < 1.1V @ 10A Description/Features IFSM = 200A The 10ETS. rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation
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I2120
10ETS.
O-220AC
10ETS
10ETS08
10ETS12
10ETS16
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10ETS
Abstract: 10ETS08 10ETS12 10ETS16
Text: Bulletin I2120 rev. A 07/97 SAFEIR Series 10ETS. INPUT RECTIFIER DIODE VF < 1.1V @ 10A Description/Features IFSM = 200A The 10ETS. rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation
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I2120
10ETS.
12-Mar-07
10ETS
10ETS08
10ETS12
10ETS16
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Untitled
Abstract: No abstract text available
Text: SCS210KG Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) (3) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible
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SCS210KG
O-220AC
R1102B
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I2102
Abstract: smd code diode 20a 20ETS 20ETS08S 20ETS12S 20ETS16S AN-994 SMD-220 SMD Marking Code Nt
Text: Bulletin I2102 rev.B 07/97 SAFEIR Series 20ETS.S INPUT RECTIFIER DIODE VF Description/Features < 1V @ 10A IFSM = 300A The 20ETS.S rectifier SAFE IR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation
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I2102
20ETS.
SMD-220
smd code diode 20a
20ETS
20ETS08S
20ETS12S
20ETS16S
AN-994
SMD Marking Code Nt
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Untitled
Abstract: No abstract text available
Text: SCS210KG Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) (3) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible
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SCS210KG
O-220AC
R1102B
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g10 smd transistor
Abstract: SMD marking DK ON smd MARKING dk S 1854 smd diode marking code ax 8150 marking g10 smd code diode 20a SMD MARKING CODE 39 20ETS08S
Text: 20ETS.S SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.S rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used
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20ETS.
Alu-163
CH-8152
g10 smd transistor
SMD marking DK ON
smd MARKING dk
S 1854
smd diode marking code ax
8150
marking g10
smd code diode 20a
SMD MARKING CODE 39
20ETS08S
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I2102
Abstract: 20ETS 20ETS08 20ETS12 20ETS16 SMD-220
Text: Previous Datasheet Index Next Data Sheet Bulletin I2102 20ETS. SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS. rectifier series has been optimized for very low forward voltage drop, with moderate
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I2102
20ETS.
CH-8152
I2102
20ETS
20ETS08
20ETS12
20ETS16
SMD-220
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25ETS08S
Abstract: 25ETS12S SMD-220 00 Marking
Text: Bulletin I2158 05/00 SAFEIR Series 25ETS.S INPUT RECTIFIER DIODE Description/Features VF < 1V @ 10A IFSM = 300A VRRM 800 - 1200V The 25ETS. rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation
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I2158
25ETS.
25ETS08S
25ETS12S
SMD-220
00 Marking
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SCS210K
Abstract: SCS210KG
Text: SCS210KG Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) (3) Inner circuit Features 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible
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SCS210KG
O-220AC
R1102B
SCS210K
SCS210KG
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smd diode 708
Abstract: 322 smd code g10 smd transistor smd code diode 20a 20ETS 20ETS08S 20ETS12S 20ETS16S AN-994 SMD-220
Text: Previous Datasheet Index Next Data Sheet 20ETS.S SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.S rectifier series has been optimized for very low forward voltage drop, with moderate
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20ETS.
CH-8152
smd diode 708
322 smd code
g10 smd transistor
smd code diode 20a
20ETS
20ETS08S
20ETS12S
20ETS16S
AN-994
SMD-220
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