Untitled
Abstract: No abstract text available
Text: HL-LC002H399W-10B10C8 White Description Features Dimension:22mmx18mm×2.80mm The White source color devices are made with GaN on Single color. sapphire White Light Emitting Diode. Emitting Color:White Easy installation with screws. Package:100pcs/white box.
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HL-LC002H399W-10B10C8
100pcs/white
Feb/20/2012
100um.
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5Z27 DIODE
Abstract: T 5Z27 ZENER 5z27 3-10B1A toshiba zener 5z27 5Z30 zener diode T 5z27
Text: 5Z27,5Z30 TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION 5Z27,5Z30 Unit: mm POWER SURGE SUPPRESSOR - - - designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over−voltage conditions. Excellent Clamp Voltage Characteristics
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5Z27 DIODE
Abstract: 5z30 T 5Z27 ZENER 5z27
Text: 5Z27,5Z30 TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION 5Z27,5Z30 Unit: mm POWER SURGE SUPPRESSOR - - - designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over−voltage conditions. Excellent Clamp Voltage Characteristics
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961001EAA2'
5Z27 DIODE
5z30
T 5Z27
ZENER 5z27
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Untitled
Abstract: No abstract text available
Text: 5Z27,5Z30 TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION 5Z27,5Z30 Unit: mm POWER SURGE SUPPRESSOR - - - designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over−voltage conditions. l Excellent Clamp Voltage Characteristics
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5Z27 DIODE
Abstract: zener diode T 5z27 5z30
Text: 5Z27,5Z30 TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION 5Z27, 5Z30 Unit: mm POWER SURGE SUPPRESSOR - - - designed for use as a reverse power transient suppressor to protect automotive electrical equipment from over−voltage conditions. Excellent Clamp Voltage Characteristics
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3-10B1A
5Z27 DIODE
zener diode T 5z27
5z30
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10B1
Abstract: 10B2 12B1 12B2 16B1 16B2 QS3165233 DIODE 15B2
Text: QS3165233 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS QuickSwitch 32:16 Mux/Demux With 50Ω Damping Resistor QS3165233 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs
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QS3165233
56-pin
QS3165233
32-bit
16-bit
QS316233
QS3162233
MDSL-00245-01
10B1
10B2
12B1
12B2
16B1
16B2
DIODE 15B2
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1Bn-12Bn
Abstract: diagram of diode 1a2 10A1 10A2 11A1 11A2 12A1 QS316212
Text: QS316212, QS3162212 QuickSwitch Products High-Speed CMOS 24-Bit Bus-Exchange Switch Q QUALITY SEMICONDUCTOR, INC. QS316212 QS3162212 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs
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QS316212,
QS3162212
24-Bit
QS316212
56-pin
QS3162212
QS316212
1Bn-12Bn
diagram of diode 1a2
10A1
10A2
11A1
11A2
12A1
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Untitled
Abstract: No abstract text available
Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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IDTQS3VH16212
24-BIT
3VH16212
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DIODE 10B3
Abstract: 12b3 diode 11b3 DIODE 10B3 11B3 diode 6b3 10B1 QS316214 QS3162214 1A12A
Text: QS316214, QS3162214 ADVANCE INFORMATION QuickSwitch Products High-Speed CMOS 12-Bit 3-to-1 Bus-Select Switch Q QUALITY SEMICONDUCTOR, INC. QS316214 QS3162214 ADVANCE INFORMATION FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC
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QS316214,
QS3162214
12-Bit
QS316214
QS3162214
56-pin
QS316214
DIODE 10B3
12b3 diode
11b3 DIODE
10B3
11B3
diode 6b3
10B1
1A12A
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Untitled
Abstract: No abstract text available
Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16212 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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IDTQS3VH16212
24-BIT
3VH16212
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.xa2
Abstract: No abstract text available
Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16212 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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IDTQS3VH16212
24-BIT
3VH16212
.xa2
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Untitled
Abstract: No abstract text available
Text: IDTQS3VH16233 2.5V / 3.3V 32:16 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32:16 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16233 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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IDTQS3VH16233
IDTQS3VH16233
3VH16233
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10A1
Abstract: 10A2 11A1 11A2 12A1 12A2 IDTQS3VH16212 QS3VH16212
Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16212 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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IDTQS3VH16212
24-BIT
3VH16212
10A1
10A2
11A1
11A2
12A1
12A2
IDTQS3VH16212
QS3VH16212
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10A1
Abstract: 10A2 11A1 11A2 12A1 12A2 IDTQS3VH16212 QS3VH16212
Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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IDTQS3VH16212
24-BIT
3VH16212
10A1
10A2
11A1
11A2
12A1
12A2
IDTQS3VH16212
QS3VH16212
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Untitled
Abstract: No abstract text available
Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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IDTQS3VH16212
24-BIT
3VH16212
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10A1
Abstract: 10A2 10B1 11A1 11A2 12A1 12A2 SN74CBTS16213
Text: SN74CBTS16213 24-BIT FET BUS-EXCHANGE SWITCH WITH SCHOTTKY DIODE CLAMPING SCDS051B – MARCH 1998 – REVISED NOVEMBER 1998 DGG OR DL PACKAGE TOP VIEW 5-Ω Switch Connection Between Two Ports TTL-Compatible Input Levels Package Options Include Plastic Thin
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SN74CBTS16213
24-BIT
SCDS051B
300-mil
SN74CBTS16213
10A1
10A2
10B1
11A1
11A2
12A1
12A2
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10A1
Abstract: 10A2 11A1 11A2 12A1 12A2 IDTQS3VH16212 QS3VH16212
Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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IDTQS3VH16212
24-BIT
3VH16212
10A1
10A2
11A1
11A2
12A1
12A2
IDTQS3VH16212
QS3VH16212
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Untitled
Abstract: No abstract text available
Text: IDTQS3VH16233 2.5V / 3.3V 32:16 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32:16 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH IDTQS3VH16233 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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IDTQS3VH16233
3VH16233
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SO56-2
Abstract: 11A2 11B2 Diode 9b2 diode diode 1a2 10A1 10A2 11A1 12A1 12A2
Text: IDTQS316212 HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH DESCRIPTION: FEATURES: − − − − − Enhanced N channel FET with no inherent diode to Vcc Low propagation delay
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IDTQS316212
24-BIT
56-pin
QS316212
12-bit
O56-1)
SO56-2
11A2
11B2 Diode
9b2 diode
diode 1a2
10A1
10A2
11A1
12A1
12A2
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.xa2
Abstract: No abstract text available
Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16212 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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IDTQS3VH16212
24-BIT
3VH16212
.xa2
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10A1
Abstract: 10A2 11A1 11A2 12A1 12A2 IDTQS3VH16212 QS3VH16212
Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 PRELIMINARY FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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IDTQS3VH16212
24-BIT
3VH16212
10A1
10A2
11A1
11A2
12A1
12A2
IDTQS3VH16212
QS3VH16212
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10A1
Abstract: 10B1 11A1 12A1 QS316292 diode 10b1 11B2 Diode
Text: QS316292, QS3162292 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS 12-Bit 2:1 Mux/Demux Switch With Resistor Termination on the Demux Side QS316292 QS3162292 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC
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QS316292,
QS3162292
12-Bit
QS316292
56-pin
QS316292
QS3162292
10A1
10B1
11A1
12A1
diode 10b1
11B2 Diode
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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Untitled
Abstract: No abstract text available
Text: QuickSwitch Products Semiconductor, I nc . High-Speed CMOS 12-ßit 2:1 Mux/Demux Switch With Resistor Termination on the Demux Side FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 5Q. bidirectional switches connect inputs
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56-pin
QS316292
QS3162292
12-Bit2
500i2
minimi12
74bbfl03
0DD3757
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