Untitled
Abstract: No abstract text available
Text: 5SDA 10D2303 5SDA 10D2303 Old part no. DA 807-970-23 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics high operational reliability suitable for parallel operation Key Parameters = 2 300 V RRM = 1 140
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10D2303
1768/138a,
D/002/97c
Sep-11
Sep-11
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Untitled
Abstract: No abstract text available
Text: 5SDA 10D2303 5SDA 10D2303 Old part no. DA 807-970-23 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics high operational reliability suitable for parallel operation Key Parameters = 2 300 V RRM = 1 140
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10D2303
1768/138a,
D/002/97d
Nov-11
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10D1703
Abstract: 10D2303 10D2003
Text: Key Parameters VRRM = 2300 IFAVM = 1140 IFSM = 13.5 VF0 = 0.83 rF = 0.30 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 10D2303 Doc. No. 5SYA 1120 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation
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10D2303
Apr-98
10D2003
10D1703
CH-5600
10D2303
10D2003
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vrrm 400v if 20A ultra fast recovery diode
Abstract: 10D2A U20GL2C48A 20GL2C
Text: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 400V Average Output Rectified Current : IO = 20A
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U20GL2C48A
vrrm 400v if 20A ultra fast recovery diode
10D2A
U20GL2C48A
20GL2C
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20JL2C
Abstract: 600v 2A ultra fast recovery diode U20JL2C48A 10D2A
Text: U20JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage Unit: mm : VRRM = 600V Average Output Rectified Current : IO = 20A
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U20JL2C48A
20JL2C
600v 2A ultra fast recovery diode
U20JL2C48A
10D2A
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PDF
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TOSHIBA RECTIFIER
Abstract: No abstract text available
Text: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION : VRRM = 400V Average Output Rectified Current : IO = 20A Ultra Fast Reverse−Recovery Time
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U20GL2C48A
12-10D2A
25HIBA
TOSHIBA RECTIFIER
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Untitled
Abstract: No abstract text available
Text: U20JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Average Output Rectified Current : VRRM = 600V : IO = 20A Ultra Fast Reverse−Recovery Time : trr = 35ns (Max)
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U20JL2C48A
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PDF
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Untitled
Abstract: No abstract text available
Text: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 400V l Average Output Rectified Current : IO = 20A
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U20GL2C48A
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PDF
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20JL2C
Abstract: U20JL2C48A TOSHIBA DIODE DATABOOK 10D2A toshiba lead free mark
Text: U20JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Average Output Rectified Current : VRRM = 600V : IO = 20A Ultra Fast Reverse−Recovery Time : trr = 35ns (Max)
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U20JL2C48A
20JL2C
U20JL2C48A
TOSHIBA DIODE DATABOOK
10D2A
toshiba lead free mark
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PDF
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Untitled
Abstract: No abstract text available
Text: U20JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION z z z z Unit: mm Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 20A
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U20JL2C48A
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PDF
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20jl2c
Abstract: No abstract text available
Text: U20JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION z z z z Unit: mm Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 20A
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U20JL2C48A
20jl2c
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motorola diode cross reference
Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3
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OCR Scan
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1N5817
1N5818
1M5819
MBR150
MBR160
MBR190
MBR1100
11DQ03
11DQ04
motorola diode cross reference
replacement UF5402
IR 30D1
diode IR 30D1
10DF2 "cross reference"
1n4007 "direct replacement"
diode RU4A
IR 10D4
1n5818 "direct replacement"
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PDF
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Untitled
Abstract: No abstract text available
Text: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A Unit: mm Average Output Rectified Current : VRRM = 400V : IO = 20A Ultra Fast Reverse−Recovery Time : trr = 35ns (Max) Repetitive Peak Reverse Voltage 3±0.2 SWITCHING MODE POWER SUPPLY APPLICATION
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U20GL2C48A
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PDF
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Untitled
Abstract: No abstract text available
Text: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A Unit: mm Repetitive Peak Reverse Voltage : VRRM = 400V Average Output Rectified Current : IO = 20A Ultra Fast Reverse−Recovery Time : trr = 35ns (Max) 3±0.2 SWITCHING MODE POWER SUPPLY APPLICATION
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U20GL2C48A
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10D4 DIODE
Abstract: 10d4
Text: SILICON RECTIFIER DIODE IODI— IODIO i a /i oo ~ i o o o v FEATURES • Miniature Size 0 Low Forward Voltage Drop • Low Reverse Leakage Current • High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS >vs TYPE Voltage Rating
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OCR Scan
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10D10
bbl5123
DDD2314
10D4 DIODE
10d4
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PDF
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10D10 diode
Abstract: 10D10 10d2 diode 10D4 T3B diode 10D6 diode 10dl 10D2 10D8 10D4 DIODE
Text: SILICON RECTIFIER DIODE IODI— IODIO ia /ioo ~ iooov FEATUR ES • Miniature Size 0 Low Forward Voltage Drop ° Low Reverse Leakage Current • High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S >\T¥PE Voltage Rating
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OCR Scan
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10D10
bbl51EB
000E314
10D10 diode
10d2 diode
10D4
T3B diode
10D6
diode 10dl
10D2
10D8
10D4 DIODE
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PDF
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F10P100
Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Text: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04
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OCR Scan
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11EQS03L
11EQS02L
11EQ03
11EQ04
11EQ05
11EQ06
11EQ09
11EQ10
11EQS03
11EQS04
F10P100
10EF1
12MF30
diode f40c
60KQ10B
30MF40
F10KF20B
12MF40
C16P04Q
C25P40F
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PDF
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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PDF
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sx3704
Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are
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OCR Scan
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ircD376
BD234
VT854,
VT855â
VT854*
iTT44,
BZX79-C24,
BZX83-C24,
BZX88-C24
sx3704
BRC157
BRC-116
Germanium Diode aa143
1n4148 ITT
TRANSISTOR BC147
BC107/spice model bf199
BY238
SN76226DN
tungsram
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PDF
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NEC car radio 4.5-Mhz
Abstract: LCO17 SP MZ8 transistor dk 50 NEC PD6121 diodo 72 DIODO LED Hoshiden LED display for radio pd7225
Text: P R E L IM IN A R Y D A TA S H E E T M O S IN T E G R A T E D C IR C U IT uPD17012GF-011 PLL Frequency Synthesizer and Controller for Car Audio FM, MW, and LW Tuners The/iPD17012GF-011 isa CMOS LSI that was developed for FM, M W ,and LW tu n ers em ploying the world
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OCR Scan
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PD17012GF-011
NEC car radio 4.5-Mhz
LCO17
SP MZ8
transistor dk 50
NEC PD6121
diodo 72
DIODO LED
Hoshiden
LED display for radio
pd7225
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PDF
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: Final E le c tric a l S p e c ific a tio n s L in tlA B . LTC1265/LTC1265-3.3/LTC1265-5 TECHNOLOGY 1.2A, High E fficiency S te p d o w n D C /D C C o n v e rte r N o v e m b er 1994 KfflURCS D€SCMCTIOn • H ig h Effic ie n c y: U p to 9 5 % The LTC 1265 is a m onolithic step-dow n current m ode
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OCR Scan
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LTC1265/LTC1265-3
3/LTC1265-5
100jiF
593D226X0025D2W
930107X0016E2W
UC12iSf14
5C163
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PDF
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TRANSISTOR S2A
Abstract: 10D2A
Text: Transistor Outline Package Surface-Mount Type TO-220SM Package Outline Dimensions Outline Dimensions Unit: mm 1.32 2.54 ±0.25 1 2 0.6 10.6 max 3 0.5 2 1 (Bottom view) 0.1 2.6 2.54 ±0.25 4.7 max 0.76 3.0 ±0.2 1.5 9.1 10.3 max 3 Land Pattern Example Unit: mm
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O-220SM
220SM
10D2A
10S2A
10S2B
10S2C
TRANSISTOR S2A
10D2A
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PDF
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TRANSISTOR S2A
Abstract: IGBT cross TE24L 10D2A
Text: Transistor Outline Package Surface Mount Type Embossed TE24L Tape for the TO-220SM Package Tape Dimensions Unit: mm 12.0 ±0.1 φ1.5 +0.1 –0.0 Y 4.0 ±0.1 1.75 ±0.1 2.0 ±0.1 0.4 ±0.05 13.9 φ2.0 ±0.1 24.0 ±0.3 11.5 ±0.1 Y X’ X Y’ Y’ 5.2 ±0.1
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TE24L
O-220SM
220SM
10D2A
10S2A
10S2B
10S2C
TRANSISTOR S2A
IGBT cross
10D2A
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PDF
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