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    DIODE 10J Search Results

    DIODE 10J Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 10J Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    17033

    Abstract: VISHAY sot23 device Marking DC 17417
    Text: BAW56 VISHAY Vishay Semiconductors Dual Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a


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    BAW56 BAL99, BAV99, BAV70. OT-23 30k/box 30k/box D-74025 10-Jul-03 17033 VISHAY sot23 device Marking DC 17417 PDF

    VISHAY diode MARKING

    Abstract: No abstract text available
    Text: BAV70 VISHAY Vishay Semiconductors Dual Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation BAV99, a dual common anode


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    BAV70 BAV99, BAW56, BAL99. OT-23 E8/10 D-74025 10-Jul-03 VISHAY diode MARKING PDF

    MARKING V18 SOD123

    Abstract: V18 marking MARKING V20 SOD123 marking code V6 95 DIODE
    Text: DZ23 Series VISHAY Vishay Semiconductors Dual Common-Cathode Zener Diodes Features • This diode is also available in other case styles and configurations including: the dual diode common cathode configuration with type designation AZ23, the single diode SOT-23 case with the type


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    OT-23 BZX84C, OD-123 BZT52C. D-74025 10-Jul-03 MARKING V18 SOD123 V18 marking MARKING V20 SOD123 marking code V6 95 DIODE PDF

    FCH20U10

    Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
    Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode


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    OD-123 O-220F-2pin O-251 O-252) O-220-2pin O-220 O-220F O-262 FCH20U10 niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045 PDF

    schottky barrier diode b22

    Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
    Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode


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    OD-123 O-220F-2pin O-251 O-252) O-220-2pin O-220 O-220F O-262 schottky barrier diode b22 FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08 PDF

    10JDA40

    Abstract: No abstract text available
    Text: 拡散型シリコンダイオード 1A 400V Tjw150℃ Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 10JDA40 外 形 図 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用


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    Tjw150 10JDA40 10JDA40 PDF

    Untitled

    Abstract: No abstract text available
    Text: 拡散型シリコンダイオード 1A 200V Tjw150℃ Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 10JDA20 外 形 図 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用


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    Tjw150 10JDA20 PDF

    10jda10

    Abstract: No abstract text available
    Text: 拡散型シリコンダイオード 1A 100V Tjw150℃ Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 10JDA10 外 形 図 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用


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    Tjw150 10JDA10 10jda10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1A 600V Tjw150℃ 拡散型シリコンダイオード Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 10JDA60 外 形 図 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用


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    Tjw150 10JDA60 PDF

    SC-89

    Abstract: diode marking N9 DAN222 n923 diode N9
    Text: WEITRON WAN222 Surface Mount Switching Diode SWITCHING DIODE 100m AMPERRES 80 VOLTS Features: *Extremely High Switching Speedff *Low Reverse Leakage Current *Small Outline Surface Mount SC-89 Package *High Reliability SC-89 SOT-523F Applications: Ultra High Speed Switching


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    WAN222 SC-89 SC-89 OT-523F) 50BSC 10-Jul-09 DAN222 diode marking N9 DAN222 n923 diode N9 PDF

    hp 4515

    Abstract: Zener diode ZP 56
    Text: Central CMDZ1L8 THRU CMDZ47L SUPERmini LOW LEVEL ZENER DIODE 250mW, 1.8 VOLTS THRU 47 VOLTS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDZ1L8 Series Silicon Low Level Zener Diode is a high quality voltage regulator, manufactured in a


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    CMDZ47L 250mW, OD-323 CMDZ16L CMDZ18L CMDZ20L CMDZ22L CMDZ24L CMDZ27L CMDZ30L hp 4515 Zener diode ZP 56 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NDL7408P Series 1 310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER DESCRIPTION NDL7408P Series is a 1 310 nm laser diode coaxial module with single mode fiber. It has a strained Multiple Quantum Well st-MQW structure and a built-in InGaAs monitor photo diode.


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    NDL7408P NDL7408PK NDL7408PL L427525 PDF

    ingaasp

    Abstract: Pulsed Laser 1550nm
    Text: DATA SHEET LASER DIODE NDL7564P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7564P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode liber.


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    NDL7564P 1550nm 1550nm NDL7564P NDL7564P1 b42752S b427525 ingaasp Pulsed Laser 1550nm PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NDL7563P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7563P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode fiber.


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    NDL7563P 1550nm 1550nm NDL7563P NDL7563P1 10-J-H 10/iS PDF

    699h

    Abstract: No abstract text available
    Text: O rd e rin g n u m b e r: EN 699H , SAHYO SVC321SPA N 0 .6 9 9 H Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features • The SVC321SPA is a varactor diode with a good linearity and high capacitance ratio that is capable of


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    SVC321SPA SVC321SPA 10juA V153-0 699h PDF

    Untitled

    Abstract: No abstract text available
    Text: MON35W42 STANDARD MICROSYSTEMS CORPORATION Hardware Monitoring IC with Thermal Diode Interface FEATURES • Monitoring Items - • • 3 Thermal Inputs From Remote Thermistors or 2N3904 NPN-type Transistors or Pentium II Deschutes Thermal Diode Output


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    MON35W42 2N3904 PDF

    Untitled

    Abstract: No abstract text available
    Text: KEC KDV147 SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. FEATURES • Low rs : rs=0.3£! Typ. . • Small Package. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC


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    T0-92M 50MHz PDF

    ccd marking zener diode

    Abstract: MARKING CCK CMHZ4678 marking ccx
    Text: Central CMHZ4678 THRU CMHZ4717 Semiconductor Corp. LOW LEVEL ZENER DIODE 1.8 VOLTS THRU 43 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4678 Series Silicon Low Level Zener Diode is a high quality voltage regulator designed for applications


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    CMHZ4678 CMHZ4717 500mW, 100mA 10jiA OD-123 OD-123 31-October ccd marking zener diode MARKING CCK marking ccx PDF

    Untitled

    Abstract: No abstract text available
    Text: Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 3N172/3N173 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • High Input Impedance • Diode Protected Gate Drain-Source or Drain-Gate Voltage 3N172 . 40V


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    3N172/3N173 3N172 3N172 3N173 -10mA 200ns PDF

    MTD2007F

    Abstract: MTD2007 1307 TRANSISTOR equivalent HSOP28 5800pF
    Text: MTD2007F SPECIFICATION Absolute maximum rating Ta=25deg Symbol VCC Vpha,I0,Il Vref VCEO(SUS) VR IC IF Tstg Tj Parameter Logic supply Logic input Reference Input Voltage Diode voltage Output current Diode current Storage temperature Junction temperature Ratings


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    MTD2007F 25deg) 40kohm Vref/10 MTD2007F HSOP28 J0036N MTD20 MTD2007 1307 TRANSISTOR equivalent 5800pF PDF

    1N4148WS

    Abstract: SOD523 1N4148 jinan 1N4148 1N4148W 1N4148WT LL4148 MCL4148 N051 semiconductor N051
    Text: 1N4148 SMALL SIGNAL SWITCHING DIODE S E M I C O N D U C T O R DO-35 FEATURES Silicon epitaxial p la n a rd io d e Fast sw itching diode 500m W pow er dissipation This diode is also available in oth e r case styles including: the M iniM elf case w ith the type designation LL4148, the M icroM elf case with the


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    1N4148 500mW LL4148, MCL4148, OD-123 1N4148W, OD-323 1N4148WS, OD-523 1N4148WT. 1N4148WS SOD523 1N4148 jinan 1N4148W 1N4148WT LL4148 MCL4148 N051 semiconductor N051 PDF

    diode V149

    Abstract: v149 KDV149 v149 diode
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KDV149 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AM RADIO BAND TUNING APPLICATION. FEATURES • • • • High Capacitance Ratio : Civ/C8v=19.5 Typ. . High Q : Q=200(Min.). Small Package.


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    T0-92M 10juA diode V149 v149 KDV149 v149 diode PDF

    KDV152M

    Abstract: KDV152S TOOC
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KDV152M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO for CB, C/P PLL APPLICATION. FEATURES • Low Series Resistance : rs=0.3 Typ. . • Small Package. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC


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    KDV152M/S KDV152M O-92M KDV152S 10juA 100MHz KDV152M KDV152S TOOC PDF

    KDV804M

    Abstract: KDV804S kec marking SOT
    Text: SEMICONDUCTOR TECHNICAL DATA KDV804M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO. FEATURES • Low Series Resistance : rs=0.3 TYP. . • Small Package : SOT-23.


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    kdv804m/s OT-23. KDV804M 100MHz 50MHz KDV804M KDV804S kec marking SOT PDF