3.2 v zener diode
Abstract: 105um DIODE ZENER X
Text: WT-Z106P-4-12 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-12 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z106P-4-12
150mm)
05-Dec-06
3.2 v zener diode
105um
DIODE ZENER X
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keyboard and touchpad schematic
Abstract: No abstract text available
Text: TVS Diode Transient Voltage Suppressor Diodes ESD206-B1-02V Ultra Low Clamping Bi-directional ESD / Surge Protection Diode ESD206-B1-02V Data Sheet Revision 1.0, 2013-04-12 Final Power Management & Multimarket Edition 2013-04-12 Published by Infineon Technologies AG
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ESD206-B1-02V
SC79-FP
SC79-TP
AN210:
keyboard and touchpad schematic
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Untitled
Abstract: No abstract text available
Text: HVGT HV37-12 12kV 300mA HIGH VOLTAGE DIODE Outline Drawings : mm HV37-12 is high reliability resin molded type high voltage DO-415 diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. Features
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HV37-12
300mA
HV37-12
DO-415
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Untitled
Abstract: No abstract text available
Text: HVCA HV37-12 12kV 300mA HIGH VOLTAGE DIODE Outline Drawings : mm HV37-12 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 4.2 o 0.8 Features
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HV37-12
300mA
HV37-12
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hvca CL03-12
Abstract: No abstract text available
Text: HVCA CL03-12 12kV 250mA HIGH VOLTAGE DIODE Outline Drawings : mm CL03-12 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 7.0 o 1.2 Features
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CL03-12
250mA
CL03-12
hvca CL03-12
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PESD5V0S1BSF
Abstract: No abstract text available
Text: PESD5V0S1BSF Ultra low profile bidirectional low capacitance ESD protection diode Rev. 1 — 12 November 2010 Preliminary data sheet 1. Product profile 1.1 General description Low capacitance bidirectional ElectroStatic Discharge ESD protection diode in a
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OD962
PESD5V0S1BSF
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aurix
Abstract: XPOSYS 726-ESD3V3U1U02LRHE6 teaklite
Text: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U1U Series Uni-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD3V3U1U-02LS ESD3V3U1U-02LRH Data Sheet Revision 1.0, 2011-04-12 Final Industrial and Multi-Market Edition 2011-04-12 Published by
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ESD3V3U1U-02LS
ESD3V3U1U-02LRH
AN210:
AN140:
726-ESD3V3U1U02LRHE6
ESD3V3U1U-02LRH
E6327
aurix
XPOSYS
teaklite
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skiip 613 gb
Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Text: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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nxp marking code
Abstract: BIDIRECTIONAL DIODE marking nxp package
Text: PESD5V0S1BLD Low capacitance bidirectional ESD protection diode Rev. 1 — 12 October 2010 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients.
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OD882D
AEC-Q101
61000-4itions
nxp marking code
BIDIRECTIONAL DIODE
marking nxp package
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Untitled
Abstract: No abstract text available
Text: iC-WJ, iC-WJZ LASER DIODE DRIVER Rev B2, Page 1/12 FEATURES APPLICATIONS ♦ Laser diode driver for continuous and pulsed operation CW to 300 kHz up to 250 mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor
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WJ 176
Abstract: G003 G008 G010 90 NF block diagram 74HCXX IC
Text: iC-WJ, iC-WJZ LASER DIODE DRIVER Rev C1, Page 1/12 FEATURES APPLICATIONS ♦ Laser diode driver for continuous and pulsed operation CW to 300 kHz up to 250 mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor
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HIGH VOLTAGE DIODE 12kv
Abstract: flyback transformer FBT 18 crt flyback transformer high voltage CRT transformer 1-2kv flyback transformer FBT 90 12KV fbt 110 12KV 2ma high voltage diode 100 kv
Text: ESJA09-12 12kV/5mA Outline Drawings : mm HIGH VOLTAGE DIODE ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 2.5 Features 10 27 min.
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ESJA09-12
12kV/5mA)
ESJA09
HIGH VOLTAGE DIODE 12kv
flyback transformer FBT 18
crt flyback transformer
high voltage CRT transformer
1-2kv
flyback transformer FBT 90
12KV
fbt 110
12KV 2ma
high voltage diode 100 kv
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ESJA08
Abstract: No abstract text available
Text: HVCA ESJA08-12 12kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. ESJA08-12 Cathode Mark Lot No. o 2.5 o 0.5
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ESJA08-12
ESJA08-
ESJA08
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Untitled
Abstract: No abstract text available
Text: HVGT ESJA08-12 12kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. ESJA08-12 Cathode Mark Lot No. o 2.5 o 0.5
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ESJA08-12
DO-206
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chopper transformer
Abstract: transistor BC 109 Data SKIIP DRIVER GD
Text: SKiiP 362 GDL 060 - 453 WT 12 Absolute Maximum Ratings Symbol Conditions 1) IGBT & Inverse Diode VCES VCC 10) Operating DC link voltage IC Theatsink = 25 °C ICM Theatsink = 25 °C, tp < 1 ms 3) Tj IGBT & Diode 4) Visol AC, 1 min. IF Theatsink = 25 °C IFM
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452 diode
Abstract: No abstract text available
Text: SKiiP 262 GDL 060 - 452 WT 12 Absolute Maximum Ratings Symbol Conditions 1) IGBT & Inverse Diode VCES VCC 10) Operating DC link voltage IC Theatsink = 25 °C ICM Theatsink = 25 °C, tp < 1 ms 3) Tj IGBT & Diode 4) Visol AC, 1 min. IF Theatsink = 25 °C IFM
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262GD060
452 diode
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Marking AE
Abstract: No abstract text available
Text: VESD12A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-protection device • Reverse working range = 12 V e3 • ESD-immunity acc. IEC 61000-4-2 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package
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VESD12A1C-02Z
OD923
OD923
2002/95/EC
2002/96/EC
VESD12A1C-02Z
VESD12A1C-02Z-GS08
08-Apr-05
Marking AE
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Untitled
Abstract: No abstract text available
Text: VESD12A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-protection device • Reverse working range = 12 V • ESD-immunity acc. IEC 61000-4-2 e3 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package
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VESD12A1C-02Z
OD923
OD923
2002/95/EC
2002/96/EC
VESD12A1C-02Z-GS08
18-Jul-08
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marking AE
Abstract: No abstract text available
Text: VESD12A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-Protection device • Reverse working range = 12 V e3 • ESD-Immunity acc. IEC 61000-4-2 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package
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VESD12A1C-02Z
OD923
OD923
2002/95/EC
2002/96/EC
VESD12A1C-02Z-GS08ed
08-Apr-05
marking AE
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B6U 145 n
Abstract: B6U 145 B6U145N B6U 220
Text: Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 145 N 12.18 ISOPACK N B6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung VRRM
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45l/s)
90l/s)
B6U 145 n
B6U 145
B6U145N
B6U 220
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KM-17
Abstract: heatsink KM 60 B6U 145
Text: Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 145 N 12.18 ISOPACK N B6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung VRRM
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45l/s)
90l/s)
KM-17
heatsink KM 60
B6U 145
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B6U 205
Abstract: b6 diode B6U205 S208A
Text: Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 205 N 12.18 ISOPACK N B6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung VRRM
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diode torque values
Abstract: S104A
Text: Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 85 N 12.18 ISOPACK N B6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung VRRM
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Abstract: No abstract text available
Text: Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 215 N 12.18 ISOPACK N B6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung VRRM
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