NXP date code marking
Abstract: No abstract text available
Text: 006 D-2 BAP50LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits Low diode capacitance Low diode forward resistance
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BAP50LX
OD882D
sym006
BAP50LX
DFN1006D-2
NXP date code marking
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thyristor control arc welding rectifier circuit
Abstract: 400 amp SCR used for welding rectifier welding transformer SCR ABB thyristor modules PN5-10DA 400 amp thyristor used for welding rectifier MDS100 three phase triac control arc welder inverter 3KW INDUCTION HEATING POWER SUPPLY
Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing solid state relays, thyristor modules, diode modules, thyristor diode modules, fast recovery diode, single phase & three phase bridge rectifier and press fit diodes etc. along with about 150
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ISO9001
DXC-614Heatsink
thyristor control arc welding rectifier circuit
400 amp SCR used for welding rectifier
welding transformer SCR
ABB thyristor modules
PN5-10DA
400 amp thyristor used for welding rectifier
MDS100
three phase triac control
arc welder inverter
3KW INDUCTION HEATING POWER SUPPLY
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Untitled
Abstract: No abstract text available
Text: DS501ST DS501ST Rectifier Diode Replaces October 2000, version DS5344-2.0 DS5344-3.0 October 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 600V ■ High Surge Capability IF AV 940A IFSM 11000A APPLICATIONS ■ Rectification ■ Freewheel Diode
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DS501ST
DS5344-2
DS5344-3
1000A
DS501ST06
DS501ST05
DS501ST04
DS501ST03
DS501ST02
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DS501ST
Abstract: DS501ST01 DS501ST02 DS501ST03 DS501ST04 DS501ST05 DS501ST06
Text: DS501ST DS501ST Rectifier Diode Replaces October 2000, version DS5344-2.0 DS5344-3.0 October 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 600V ■ High Surge Capability IF AV 940A IFSM 11000A APPLICATIONS ■ Rectification ■ Freewheel Diode
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DS501ST
DS5344-2
DS5344-3
1000A
DS501ST06
DS501ST05
DS501ST04
DS501ST03
DS501ST02
DS501ST
DS501ST01
DS501ST02
DS501ST03
DS501ST04
DS501ST05
DS501ST06
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DS501ST
Abstract: DS501ST01 DS501ST02 DS501ST03 DS501ST04 DS501ST05 DS501ST06
Text: DS501ST DS501ST Rectifier Diode Replaces October 2000, version DS5344-2.0 DS5344-3.0 October 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 600V ■ High Surge Capability IF AV 940A IFSM 11000A APPLICATIONS ■ Rectification ■ Freewheel Diode
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DS501ST
DS5344-2
DS5344-3
1000A
DS501ST06
DS501ST05
DS501ST04
DS501ST03
DS501ST02
DS501ST
DS501ST01
DS501ST02
DS501ST03
DS501ST04
DS501ST05
DS501ST06
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AN4839
Abstract: DS501ST DS501ST01 DS501ST02 DS501ST03 DS501ST04 DS501ST05 DS501ST06 A596A XT-2350
Text: DS501ST DS501ST Rectifier Diode Replaces October 2000, version DS5344-2.0 DS5344-3.0 October 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 600V ■ High Surge Capability IF AV 940A IFSM 11000A APPLICATIONS ■ Rectification ■ Freewheel Diode
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DS501ST
DS5344-2
DS5344-3
1000A
DS501ST06
DS501ST05
DS501ST04
DS501ST03
DS501ST02
AN4839
DS501ST
DS501ST01
DS501ST02
DS501ST03
DS501ST04
DS501ST05
DS501ST06
A596A
XT-2350
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
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Untitled
Abstract: No abstract text available
Text: 006 D-2 BAP65LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits High voltage, current controlled
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BAP65LX
OD882D
sym006
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diode NXP marking code N1
Abstract: SOD882D
Text: 006 D-2 BB173LX DF N1 VHF variable capacitance diode Rev. 1 — 25 March 2013 Product data sheet 1. Product profile 1.1 General description The BB173LX is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD882D DFN1006D-2 ultra small leadless SMD plastic package.
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BB173LX
BB173LX
OD882D
DFN1006D-2)
sym008
diode NXP marking code N1
SOD882D
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diode NXP marking code N1
Abstract: No abstract text available
Text: 006 D-2 BB174LX DF N1 VHF variable capacitance diode Rev. 1 — 26 March 2013 Product data sheet 1. Product profile 1.1 General description The BB174LX is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD882D DFN1006D-2 ultra small leadless SMD plastic package.
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BB174LX
BB174LX
OD882D
DFN1006D-2)
sym008
diode NXP marking code N1
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Untitled
Abstract: No abstract text available
Text: Bulletin I27302 01/07 GB50XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 48A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft
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I27302
GB50XF60K
80merchantability,
12-Mar-07
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marking nxp package
Abstract: NXP SMD diode MARKING CODE
Text: 006 D-2 BAP51LX DF N1 Silicon PIN diode Rev. 2 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits High speed switching for RF signals
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BAP51LX
OD882D
sym006
BAP51LX
OD882
marking nxp package
NXP SMD diode MARKING CODE
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Untitled
Abstract: No abstract text available
Text: 006 D-2 BAP55LX DF N1 Silicon PIN diode Rev. 4 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits High speed switching for RF signals
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BAP55LX
OD882D
sym006
BAP55LX
OD882
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DFN1006D-2
Abstract: diode marking code cz
Text: 006 D-2 PESD5V0F1BLD DF N1 Femtofarad bidirectional ESD protection diode Rev. 1 — 23 July 2012 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device
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DFN1006D-2
OD882D)
DFN1006D-2
diode marking code cz
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NXP date code marking
Abstract: marking nxp package SOD882D a/BAP1321LX
Text: 006 D-2 BAP1321LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits High voltage, current controlled
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BAP1321LX
OD882D
sym006
NXP date code marking
marking nxp package
SOD882D
a/BAP1321LX
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Untitled
Abstract: No abstract text available
Text: 006 D-2 BAP142LX DF N1 Silicon PIN diode Rev. 2 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits High voltage, current controlled RF resistor
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BAP142LX
OD882D
sym006
BAP142LX
DFN100.
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NXP date code marking
Abstract: marking nxp package nxp marking code
Text: 006 D-2 BAP63LX DF N1 Silicon PIN diode Rev. 2 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits High speed switching for RF signals
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BAP63LX
OD882D
sym006
BAP63LX
OD882
NXP date code marking
marking nxp package
nxp marking code
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Untitled
Abstract: No abstract text available
Text: 006 D-2 PESD5V0F1BRLD DF N1 Femtofarad bidirectional ESD protection diode Rev. 1 — 30 January 2014 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device
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DFN1006D-2
OD882D)
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Untitled
Abstract: No abstract text available
Text: 006 D-2 PESD5V0F1BLD DF N1 Femtofarad bidirectional ESD protection diode Rev. 1 — 23 July 2012 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device
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DFN1006D-2
OD882D)
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IGBT K 40 T 1202
Abstract: 40 t 1202 igbt BUP306D
Text: SIEMENS BUP306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 306D VCE h 1200V 23A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code
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OCR Scan
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PDF
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O-218AB
BUP306D
Q67040-A4222-A2
SII003
IGBT K 40 T 1202
40 t 1202 igbt
BUP306D
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DIODE T50
Abstract: MMBD7000 mmbd1201 MA670
Text: MMBD7000 & Discrete POW ER & Signal Technologies National Semiconductor’ MMBD7000 High Conductance Ultra Fast Diode Sourced from P roce ss 1P. Se e MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol ta^scum essotnemisenoted Parameter Units
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OCR Scan
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PDF
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MMBD7000
MMBD1201-1205
L5D1130
004G5A1
0040Sfl2
DIODE T50
MMBD7000
mmbd1201
MA670
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