MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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c2 zener renesas
Abstract: B2 Zener HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS24 HZS30
Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0184-0300Z Previous: ADE-208-120B Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
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REJ03G0184-0300Z
ADE-208-120B)
c2 zener renesas
B2 Zener
HZS11
HZS12
HZS15
HZS16
HZS18
HZS20
HZS24
HZS30
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diode 120B
Abstract: air cooled heatsink
Text: B2U-MDD26/14 PS260/120B 57Amp Single phase diode rectifier assembly Features: • • • • Isolated module solution DC Busbars Aluminium heatsink mounted Naturally air cooled Characteristics: Symbol Idc Vrms Tamb Tstg Parameter Output DC current rating naturally air cooled
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B2U-MDD26/14
PS260/120B
57Amp
ECL020340
diode 120B
air cooled heatsink
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Hitachi DSA002725
Abstract: No abstract text available
Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply ADE-208-120B Z Rev 2 Nov 1999 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
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ADE-208-120B
Hitachi DSA002725
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zener hitachi
Abstract: zener 5.1 B2 zener mark code A2 hzs6b2 Hitachi DSAUTAZ006 ECG 177 zener diode zener series hzs
Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply ADE-208-120B Z Rev. 2 Nov. 1999 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
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ADE-208-120B
D-85622
zener hitachi
zener 5.1 B2
zener mark code A2
hzs6b2
Hitachi DSAUTAZ006
ECG 177 zener diode
zener series hzs
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Untitled
Abstract: No abstract text available
Text: • R A P T 11G F 120B R D ADVANCED W .\A p o w e r Te c h n o l o g y “ 1200V 22A Fast IGBT& FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT free w heeling ultraFast Recovery Epitaxial Diode FRED offers superior
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20KHz
APT11GF120BRD
O-247
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1SMB3EZ11
Abstract: 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ15 1SMB3EZ200
Text: 1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES l For surface mounted applications in order to optimize board space l Low profile package l Built-in strain relief l l Glass passivated junction
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1SMB3EZ11
1SMB3EZ200
DO-214AA
DO-214AA,
MIL-STD-750,
1SMB3EZ12
1SMB3EZ13
1SMB3EZ14
1SMB3EZ15
1SMB3EZ200
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GV 475 diode
Abstract: 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ200 zener Diode 19B H 48 zener diode
Text: TRANSYS ELECTRONICS LIMITED 1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 W atts FEATURES For surface mounted app cations in order to DO-214AA optimize board space MODIFIED J-BEND Low prof e package Built-in strain re ef
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1SMB3EZ11
1SMB3EZ200
0J/10
DO-214AA,
MIL-STD-750,
GV 475 diode
1SMB3EZ12
1SMB3EZ13
1SMB3EZ14
1SMB3EZ200
zener Diode 19B
H 48 zener diode
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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inverter 3phase 220 volt
Abstract: diode 120B
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule MHPM7A 16A 120B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A15S120DC3) This module integrates a 3-phase input rectifier bridge, 3-phase
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MHPM7A15S120DC3)
inverter 3phase 220 volt
diode 120B
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G30-E3
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er Module M HPM 7B 16A 120B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A15S120DC3) This module integrates a 3-phase input rectifier bridge, 3-phase
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MHPM7A15S120DC3)
G30---------E3
7B16A120B
G30-E3
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Motorola 4-291
Abstract: HPM7A25A120B
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule Integrated Power Stage for 5 hp Motor Drives M HPM 7A 25A 120B This device is not recommended for new designs (This device is replaced by MHPM7A25S120DC3) 25 AMP, 1200 VOLT HYBRID POWER MODULE This module integrates a 3-phase input rectifier bridge, 3-phase
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MHPM7A25S120DC3)
HPM7A25A120B
Motorola 4-291
HPM7A25A120B
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module Integrated Power Stage for 5 hp Motor Drives M HPM 7B 25A 120B This device is not recommended for new designs (This device is replaced by MHPM7A25S120DC3) 25 AMP, 1200 VOLT HYBRID POWER MODULE This module integrates a 3-phase input rectifier bridge, 3-phase
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MHPM7A25S120DC3)
MHPM7B25A120B
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum enti by M HPM 7A16A 120B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule M H P M 7A 1 6 A 1 2 0 B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A15S120DC3)
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7A16A
120B/D
MHPM7A15S120DC3)
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum enti by M HPM 7A25A 120B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module Integrated Power Stage for 5 hp Motor Drives M H PM 7A 25A120B This device is not recommended for new designs (This device is replaced by MHPM7A25S120DC3)
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7A25A
120B/D
MHPM7A25S120DC3)
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BT 1840 PA
Abstract: pms Bridge Rectifier THA 1200 S uaa 1300
Text: MOTOROLA Order this documant by MHPM7B18A120B/D SEMICONDUCTOR TECHNICAL DATA 7 16 120B MHPM B A Hybrid Power Module Motore « Profond Dovfoa Integrated Power Stage for 3.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output
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MHPM7B18A120B/D
MHPM7B16A120B
BT 1840 PA
pms Bridge Rectifier
THA 1200 S
uaa 1300
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Untitled
Abstract: No abstract text available
Text: SKM 120B020 Absolute Maximum Ratings Symbol Conditions ! 3 / 4 0 & Values Units ) #78% .) ; ) = >) , ? (/) #( /% 5 5 4 /) 5 @ 3 = ( ) @9 3 = 9 .) 5 9 5: !< #!% ! 3 / #7/% 4 ( 5 ( ,
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120B020
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120b02
Abstract: SKM120B020
Text: SKM 120B020 Absolute Maximum Ratings Symbol Conditions ! 3 / 4 0 & Values Units ) #78% .) ; ) = >) , ? (/) #( /% 5 5 4 /) 5 @ 3 = ( ) @9 3 = 9 .) 5 9 5: !< #!% ! 3 / #7/% 4 ( 5 ( ,
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120B020
120b02
SKM120B020
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081Q
Abstract: No abstract text available
Text: A APT33GF120B2RD APT33GF120LRD 1200V 52A dvanced row er TECHN O LO G Y APT33G F 120B 2R D Fast IG B T & F R E D The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT free
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APT33GF120B2RD
APT33GF120LRD
APT33G
20KHz
APT33GF120LHD
APT33GF120B2RD/LRD
20Kf2)
O-264
081Q
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HD74LVC16245A
Abstract: Hitachi DSA00309
Text: HD74LVC16245A 16-bit Bus Transceivers with 3-state Outputs ADE-205-120B Z 3rd Edition December 1996 Description The HD74LVC16245A has sixteen two direction buffers, for the fittest at two direction bus lines with three state outputs. A direction control input, DIR. When DIR is high, data flows from the A inputs to the B
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HD74LVC16245A
16-bit
ADE-205-120B
HD74LVC16245A
Hitachi DSA00309
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Hitachi DSA0076
Abstract: HD74LVC16245A
Text: HD74LVC16245A 16-bit Bus Transceivers with 3-state Outputs ADE-205-120B Z 3rd Edition December 1996 Description The HD74LVC16245A has sixteen two direction buffers, for the fittest at two direction bus lines with three state outputs. A direction control input, DIR. When DIR is high, data flows from the A inputs to the B
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HD74LVC16245A
16-bit
ADE-205-120B
HD74LVC16245A
Hitachi DSA0076
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HD74LVC16245A
Abstract: HD74LVC16245ATEL
Text: HD74LVC16245A 16-bit Bus Transceivers with 3-state Outputs REJ03D0365–0400Z Previous ADE-205-120B(Z Rev.4.00 Jul. 29, 2004 Description The HD74LVC16245A has sixteen two direction buffers, for the fittest at two direction bus lines with three state outputs. A direction control input, DIR. When DIR is high, data flows from the A inputs to the B outputs. When DIR
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HD74LVC16245A
16-bit
REJ03D0365
0400Z
ADE-205-120B
HD74LVC16245A
HD74LVC16245ATEL
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Untitled
Abstract: No abstract text available
Text: HD74LVC16245A 16-bit Bus Transceivers with 3-state Outputs REJ03D0365–0400Z Previous ADE-205-120B(Z Rev.4.00 Jul. 29, 2004 Description The HD74LVC16245A has sixteen two direction buffers, for the fittest at two direction bus lines with three state outputs. A direction control input, DIR. When DIR is high, data flows from the A inputs to the B outputs. When DIR
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HD74LVC16245A
16-bit
REJ03D0365â
0400Z
ADE-205-120B
HD74LVC16245A
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