ENN501I
Abstract: SVC201SPA
Text: Ordering number : ENN501I SVC201SPA Diffused Junction Type Silicon Diode SVC201SPA Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions unit : mm 1184 [SVC201SPA] 2.2 3.0 4.0 1.8 0.4 0.5 15.0 The SVC201SPA, 201Y are varactor diodes of
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ENN501I
SVC201SPA
SVC201SPA]
SVC201SPA,
ENN501I
SVC201SPA
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kt 501
Abstract: SVC201SPA SVC201Y "FM receiver"
Text: Ordering number :EN501H SVC201SPA, 201Y Duffused Junctions Type Sillicon Diode Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions • The SVC201SPA, 201Y are varactor diodes of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in FM
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EN501H
SVC201SPA,
SVC201SPA]
SVC201Y]
kt 501
SVC201SPA
SVC201Y
"FM receiver"
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transistor B 1184
Abstract: SVC201SPA SVC201Y "FM receiver" varactor diode fm
Text: Ordering number :EN501H SVC201SPA, 201Y Duffused Junctions Type Silicon Diode Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions • The SVC201SPA, 201Y are varactor diodes of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in FM
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EN501H
SVC201SPA,
SVC201SPA]
SVC201Y]
transistor B 1184
SVC201SPA
SVC201Y
"FM receiver"
varactor diode fm
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PEAK DETECTOR
Abstract: 2N2222A/ZTX Silicon Detector Corporation ISL8116 simple PEAK DETECTOR PEAK DETECTOR application EL8202 germanium diode ZTX 15 2n2222a making
Text: Feedback Gives Peak Detector More Precision Application Note May 8, 2007 AN1309.0 Tamara A. Papalias and Mike Wong The standard method for measuring the peak of a signal involves the use of a diode. If the diode is used alone, the input voltage has to be significantly larger than the turn-on
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AN1309
200mV
700mV
1-888-INTERSIL
PEAK DETECTOR
2N2222A/ZTX
Silicon Detector Corporation
ISL8116
simple PEAK DETECTOR
PEAK DETECTOR application
EL8202
germanium diode
ZTX 15
2n2222a making
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13097 Revision. 2 Product Standards Schottky Barrier Diode DB2J20600L DB2J20600L Silicon epitaxial planar type Unit: mm For high frequency rectification DB2X206 in SMini2 type package 1.25 0.35 0.13 2 • Features 1.7 2.5 Low forward voltage VF
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TT4-EA-13097
DB2J20600L
DB2X206
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13095 Revision. 2 Product Standards Zener Diode DZ5J120D0R DZ5J120D0R Silicon epitaxial planar type Unit: mm For surge absorption circuit DZ5X120D in SMini5 type package 2.0 0.2 5 • Features 4 1.25 2.1 Excellent rising characteristics of zener current Iz
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TT4-EA-13095
DZ5J120D0R
DZ5X120D
UL-94
DZ3X120D
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13098 Revision. 2 Product Standards Schottky Barrier Diode DB2J40600L DB2J40600L Silicon epitaxial planar type Unit: mm For high speed switching circuits 1.25 0.35 • Features 0.13 2 1.7 2.5 Small reverse current IR Short reverse recovery time trr
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TT4-EA-13098
DB2J40600L
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13096 Revision. 2 Product Standards Zener Diode DZ5J100D0R DZ5J100D0R Silicon epitaxial planar type Unit: mm For surge absorption circuit DZ5X100D in SMini5 type package 2.0 0.2 5 • Features 4 1.25 2.1 Excellent rising characteristics of zener current Iz
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TT4-EA-13096
DZ5J100D0R
DZ5X100D
UL-94
DZ3X100D
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13099 Revision. 2 Product Standards Schottky Barrier Diode DB2S40600L DB2S40600L Silicon epitaxial planar type Unit: mm For high speed switching DB2J406 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6 Small reverse current IR Short reverse recovery time trr
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TT4-EA-13099
DB2S40600L
DB2J406
UL-94
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SB02-03C
Abstract: No abstract text available
Text: Ordering number :EN2982A SB02-03C Shottky Barrier Diode 30V, 200mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1148 [SB02-03C] Features · Low forward voltage (VF max=0.55V).
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EN2982A
SB02-03C
200mA
SB02-03C]
SB02-03C
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN2985B SB20-03P Schottky Barrier Diode http://onsemi.com 30V, 2A, Low IR, Single PCP Applications • High frequency rectification switching regulators, converters, choppers Features • • • • Fast reverse recovery time (trr max=20ns)
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EN2985B
SB20-03P
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SB20-03P-TD
Abstract: rectifier sc-62
Text: SB20-03P Ordering number : EN2985B SANYO Semiconductors DATA SHEET SB20-03P Schottky Barrier Diode 30V, 2A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • • Fast reverse recovery time (trr max=20ns)
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EN2985B
SB20-03P
SB20-03P-TD
rectifier sc-62
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Untitled
Abstract: No abstract text available
Text: SB20-03P Ordering number : EN2985B SANYO Semiconductors DATA SHEET SB20-03P Schottky Barrier Diode 30V, 2A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • • Fast reverse recovery time (trr max=20ns)
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SB20-03P
EN2985B
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CD214B
Abstract: phenolic resin
Text: MATERIAL DECLARATION SHEET Material Number CD214B Series Product Line Diode Products Compliance Date 1 Jan 2005 RoHS Compliant Yes No. Construction Element subpart 1 Dice 2 High-melting point Solder 3 Lead frame & clip MSL Homogeneous Material Silicon with metal
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CD214B
phenolic resin
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CD0603
Abstract: No abstract text available
Text: MATERIAL DECLARATION SHEET Material Number CD0603 Series Product Line Diode Products Compliance Date 1 Jan 2005 RoHS Compliant Yes No. 1 2 3 4 5 Construction Element subpart FR-5 BOARD Wafer Al Wire Silver paste Molding Compound Headquarters Riverside CA
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CD0603
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9716 diode
Abstract: 4433 an 17823 8906 17823 A 6077 D1069N D1809N D269N D3301N
Text: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 560 V 3600 V + Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D [°C]
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D269N
D849N
D1069N
D1809N
D3301N
9716 diode
4433
an 17823
8906
17823 A
6077
D1069N
D1809N
D269N
D3301N
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CD1005
Abstract: material declaration sheet Diode PT 520 diode 1436
Text: MATERIAL DECLARATION SHEET Material Number CD1005 Series Product Line Diode Products Compliance Date 1 Jan 2005 RoHS Compliant Yes No. 1 2 3 4 5 Construction Element subpart FR-5 BOARD Wafer Al Wire Silver paste Molding Compound Headquarters Riverside CA
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CD1005
material declaration sheet
Diode PT 520
diode 1436
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN2985 SB20-03P Schottky Barrier Diode 30V, 2A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1163 [SB20-03P] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=20ns).
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EN2985
SB20-03P
SB20-03P]
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727 thyristor
Abstract: M32 diode an 7591 thyristor 4592 D849N 8906 D1069N D1809N D269N D3301N
Text: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 560 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]
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D269N
D749N
D1069N
D1809N
D849N
727 thyristor
M32 diode
an 7591
thyristor 4592
D849N
8906
D1069N
D1809N
D269N
D3301N
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transistor 0882
Abstract: CD214C
Text: MATERIAL DECLARATION SHEET Material Number CD214C Series Product Line Diode Products Compliance Date 1 Jan 2005 RoHS Compliant Yes No. Construction Element subpart MSL Homogeneous Material 1 Dice Silicon with metal 2 High-melting point Solder paste Tin-Lead solder
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CD214C
transistor 0882
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CD214A
Abstract: No abstract text available
Text: MATERIAL DECLARATION SHEET Material Number CD214A Series Product Line Diode Products Compliance Date 1 Jan 2005 RoHS Compliant Yes No. Construction Element subpart MSL Homogeneous Material 1 Dice Silicon with metal 2 High-melting point Solder paste Tin-Lead solder
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CD214A
18-March
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80N120
Abstract: No abstract text available
Text: SIEMENS BUP 602D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode P in i Pin 2 Pin 3 G C E Type VCB h Package Ordering Code BUP 602D
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O-218AB
Q67040-A4229-A2
BUP602D
80N120
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lm 3298
Abstract: LM 3171 lm 1628 NS501 um 3567 LM 1709 1565R 1201 varactor 3745L
Text: O rdering num ber : EN501H SVC201SPA.201Y N0.5OIH Diffused Junction Type Silicon Diode Varactor Diode IOCAP for FM Receiver Electronic Tuning M F e a tu re s The SVC201SPA, 201Y are varactor diodes of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in FM receiver electronic tuning applications.
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EN501H
SVC201SPA
SVC201SPA,
Ns501-4/4
lm 3298
LM 3171
lm 1628
NS501
um 3567
LM 1709
1565R
1201 varactor
3745L
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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