Untitled
Abstract: No abstract text available
Text: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the
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1N4151W-V
DO-35
1N4151,
LL4151.
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
1N4151W-V
1N4151W-V-GS18
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Untitled
Abstract: No abstract text available
Text: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the
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1N4151W-V
DO-35
1N4151,
LL4151.
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
1N4151W-V
1N4151W-V-GS18
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SOT23 DIODE marking CODE AV
Abstract: No abstract text available
Text: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF
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1N4448W-V
DO-35
1N4448,
LL4448,
OT-23
IMBD4448
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
SOT23 DIODE marking CODE AV
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Untitled
Abstract: No abstract text available
Text: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the
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Original
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PDF
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1N4151W-V
DO-35
1N4151,
LL4151.
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
1N4151W-V
1N4151W-V-GS18
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Untitled
Abstract: No abstract text available
Text: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF
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Original
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PDF
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1N4448W-V
DO-35
1N4448,
LL4448,
OT-23
IMBD4448
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
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Untitled
Abstract: No abstract text available
Text: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF
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Original
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PDF
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1N4448W-V
DO-35
1N4448,
LL4448,
OT-23
IMBD4448
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
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Untitled
Abstract: No abstract text available
Text: BAS16D-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon epitaxial planar diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC
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BAS16D-V
OT-23
BAS16
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
BAS16D-V
BAS16D-V-GS18
BAS16D-V-GS08
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Untitled
Abstract: No abstract text available
Text: BAS16D-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon epitaxial planar diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC
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BAS16D-V
OT-23
BAS16
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
BAS16D-V
BAS16D-V-GS18
BAS16D-V-GS08
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Untitled
Abstract: No abstract text available
Text: BAS16D-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon epitaxial planar diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC
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BAS16D-V
OT-23
BAS16
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
BAS16D-V
BAS16D-V-GS18
BAS16D-V-GS08
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Untitled
Abstract: No abstract text available
Text: 1N4148W-V-G Vishay Semiconductors Small Signal Fast Switching Diode Features • • • • Silicon epitaxial planar diode Fast switching diode AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Mechanical Data
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1N4148W-V-G
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
18/10K
10K/box
08/3K
15K/box
1N4148W-V-G
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Untitled
Abstract: No abstract text available
Text: 1N4150W-V Vishay Semiconductors Small Signal Switching Diode Features • Silicon Epitaxial Planar Diode • For general purpose and switching • This diode is also available in other case styles including the DO-35 case with the type designation 1N4150, and the
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1N4150W-V
DO-35
1N4150,
LL4150.
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
1N4150W-V
1N4150W-V-GS18
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vishay SOD-123 data code
Abstract: A4 marking diode SOD 123 1N4150W-V-GS08
Text: 1N4150W-V Vishay Semiconductors Small Signal Switching Diode Features • Silicon Epitaxial Planar Diode • For general purpose and switching • This diode is also available in other case styles including the DO-35 case with the type designation 1N4150, and the
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Original
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PDF
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1N4150W-V
DO-35
1N4150,
LL4150.
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
1N4150W-V
1N4150W-V-GS18
vishay SOD-123 data code
A4 marking diode SOD 123
1N4150W-V-GS08
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Untitled
Abstract: No abstract text available
Text: 1N4150W-V Vishay Semiconductors Small Signal Switching Diode Features • Silicon Epitaxial Planar Diode • For general purpose and switching • This diode is also available in other case styles including the DO-35 case with the type designation 1N4150, and the
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Original
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PDF
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1N4150W-V
DO-35
1N4150,
LL4150.
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
1N4150W-V
1N4150W-V-GS18
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Untitled
Abstract: No abstract text available
Text: 1N4148W-V-G Vishay Semiconductors Small Signal Fast Switching Diode Features • • • • Silicon epitaxial planar diode Fast switching diode AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Mechanical Data
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1N4148W-V-G
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
18/10K
10K/box
08/3K
15K/box
1N4148W-V-G
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Untitled
Abstract: No abstract text available
Text: Bulletin I27306 01/06 GB15RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 17A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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I27306
GB15RF60K
E78996
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin I27306 01/06 GB15RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 17A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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I27306
GB15RF60K
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Untitled
Abstract: No abstract text available
Text: APT17M120JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode
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APT17M120JCU3
OT-227)
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Untitled
Abstract: No abstract text available
Text: UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 DUAL SCHOTTKY DIODE BRIDGE FEATURES D Monolithic Eight-Diode Array D Exceptional Efficiency D Low Forward Voltage D Fast Recovery Time D High Peak Current D Small Size DESCRIPTION This eight-diode array is designed for
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UC1610
UC3610
SLUS339B
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microswitch 12v bipolar
Abstract: nf710 MRD901 2sa968 emf lm324 inverter sensing circuit speed control of fan motor using LM324 calibration of phototransistor sanyo denki tachometer generator 2N2219A ADM1024ARU
Text: a System Hardware Monitor with Remote Diode Thermal Sensing ADM1024 FEATURES Up to Nine Measurement Channels Inputs Programmable-to-Measure Analog Voltage, Fan Speed or External Temperature External Temperature Measurement with Remote Diode Two Channels
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ADM1024
ADM1024
C00059
24-Lead
RU-24)
microswitch 12v bipolar
nf710
MRD901
2sa968 emf
lm324 inverter sensing circuit
speed control of fan motor using LM324
calibration of phototransistor
sanyo denki tachometer generator
2N2219A
ADM1024ARU
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CMPZ4678
Abstract: CMPZ4679 CMPZ4680 CMPZ4681 CMPZ4682 CMPZ4683 CMPZ4684 CMPZ4685 CMPZ4686 CMPZ4717
Text: Central CMPZ4678 THRU CMPZ4717 SURFACE MOUNT 350mW LOW LEVEL SILICON ZENER DIODE 5% TOLERANCE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ4678 Series silicon zener diode is a high quality voltage regulator designed for applications requiring an
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CMPZ4678
CMPZ4717
350mW
OT-23
100mA
CMPZ4711
CMPZ4712
CMPZ4713
CMPZ4714
CMPZ4678
CMPZ4679
CMPZ4680
CMPZ4681
CMPZ4682
CMPZ4683
CMPZ4684
CMPZ4685
CMPZ4686
CMPZ4717
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Untitled
Abstract: No abstract text available
Text: PD - 97633A IRF6894MPbF IRF6894MTRPbF DirectFET plus MOSFET with Schottky Diode RoHs Compliant Containing No Lead and Bromide Typical values unless otherwise specified Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm)
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7633A
IRF6894MPbF
IRF6894MTRPbF
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Untitled
Abstract: No abstract text available
Text: IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values unless otherwise specified l RoHs Compliant Containing No Lead and Bromide l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) lDual Sided Cooling Compatible
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IRF6898MPbF
IRF6898MTRPbF
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17DQ6B
Abstract: 17DQ6-B 6DQ6-B 17CU5 6DE4 tube 17ay3a 6dq6 17AY3-A 6CU5 Scans-0017311
Text: PRODUCT INFORMATION F I.E C TR O K IC > IN A C T IO N - % 17AY3-A through 17DQ6-B TUBES Page 1 9-65 17AY3-A 17CU5 17DE4 17DQ6-B 17AY3-A Diode. The 17AY3-A is a single heater-cathode type diode designed for use as the damping diode in the horizontal-deflection circuit of television receivers.
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17AY3-A
17DQ6-B
17AY3-A
17CU5
17DE4
17CU5
17DQ6B
17DQ6-B
6DQ6-B
6DE4 tube
17ay3a
6dq6
6CU5
Scans-0017311
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17BF11
Abstract: 17BE3 17BF11-A 17be3 tube 17AX3 6BF11 17bz3 22BW3 General electric diode 17bz3 tube
Text: — PRODUCT INFORMATION — E L E C T R O N IC I N A C T I O N - TUBES 17AX3 through 17BZ3 Page 17AX3 17BE3 17BF11 17BF11-A 17BW3 17BZ3 17AX3 Compactron Diode. The 17AX3 is a compactron, s in g le heater-cathode type diode, intended for se rv ic e a s the damping diode
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17AX3
17BZ3
17AX3
17BE3
17BF11
17BF11-A
17BW3
17BF11
17BE3
17BF11-A
17be3 tube
6BF11
17bz3
22BW3
General electric diode
17bz3 tube
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