diode case R-1
Abstract: 02 diode R-1 02 diode case R-1 DO-41-MINI
Text: ZOWIE Low VF Rectifier Diode G110DL THRU G110ML Low VF Rectifier Diode 200V~1000V / 1.0A VF < 0.90V @IF = 1A FEATURES IFSM = 30Amp * * * * * Lead free product, compliance to RoHS GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction
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G110DL
G110ML
30Amp
300uS
diode case R-1
02 diode R-1
02 diode case R-1
DO-41-MINI
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2510W
Abstract: RS1M diode
Text: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10
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DO-214AC
ABS10
LL4148
MB10S
SM4007
MB10M
DB101-DB107;
DB151-DB157
DB101S-DB107S;
2510W
RS1M diode
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Untitled
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode G110DL THRU G110ML Low VF Rectifier Diode 200V~1000V / 1.0A VF < 0.90V @IF = 1A FEATURES IFSM = 30Amp * * * * * Compliance to RoHS product GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction Low forward voltage drop
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G110DL
G110ML
30Amp
300uS
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diode 1000V 10a
Abstract: 02 diode case R-1 diode case R-1 200V-1000V
Text: ZOWIE Low VF Rectifier Diode G110DLH THRU G110MLH Low VF Rectifier Diode 200V~1000V / 1.0A VF < 0.90V @IF = 1A FEATURES IFSM = 30Amp * * * * * * Halogen-free type Lead free product, compliance to RoHS GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction
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G110DLH
G110MLH
30Amp
300uS
diode 1000V 10a
02 diode case R-1
diode case R-1
200V-1000V
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Untitled
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode GP10DLH THRU GP10MLH Low VF Rectifier Diode VF < 0.90V @IF = 1A FEATURES IFSM = 50Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop
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GP10DLH
GP10MLH
50Amp
DO-204AL
DO-204AL
300uS
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GP10DL
Abstract: DO-204AL
Text: ZOWIE Low VF Rectifier Diode GP10DL THRU GP10ML Low VF Rectifier Diode VF < 0.90V @IF = 1A FEATURES IFSM = 50Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop
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GP10DL
GP10ML
50Amp
DO-204AL
DO-204AL
MIL-STD-750,
300uS
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DO-204AL
Abstract: diode 10dl
Text: ZOWIE Low VF Rectifier Diode GP10DLH THRU GP10MLH Low VF Rectifier Diode VF < 0.90V @IF = 1A FEATURES IFSM = 50Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop
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GP10DLH
GP10MLH
50Amp
DO-204AL
DO-204AL
300uS
diode 10dl
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DSA10
Abstract: DSA10G DSA10J DSA10L DIODE 1.0A 1000V
Text: Ordering number:EN711D DSA10 Diffused Junction Type Silicon Diode 1.0A Power Rectifier Features Package Dimensions • Plastic molded type. · Peak Reverse Voltage : VRM=600 to 1000V · Average Rectified Current : IO=1A. unit:mm 1005 [DSA10] C:Cathode A:Anode
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EN711D
DSA10
DSA10]
DSA10G
DSA10J
DSA10L
DSA10
DSA10G
DSA10J
DSA10L
DIODE 1.0A 1000V
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Untitled
Abstract: No abstract text available
Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 1.0A GF10DLH THRU GF10MLH VF < 0.91V @IF = 1A FEATURES Halogen-free type Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction High surge current capability
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GF10DLH
GF10MLH
50Amp
DO-214AC
DO-214AC
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24 DO-214AC
Abstract: MARKING code 14 DO-214AC gf10ml
Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 1.0A GF10DLH THRU GF10MLH VF < 0.91V @IF = 1A FEATURES Halogen-free type Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction High surge current capability
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GF10DLH
GF10MLH
50Amp
DO-214AC
DO-214
24 DO-214AC
MARKING code 14 DO-214AC
gf10ml
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GF10DL
Abstract: GF10GL GF10JL GF10KL GF10ML
Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 1.0A GF10DL THRU GF10ML VF < 0.91V @IF = 1A FEATURES Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction High surge current capability Ideal for surface mount automotive applications
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GF10DL
GF10ML
50Amp
DO-214AC
DO-214AC
GF10GL
GF10JL
GF10KL
GF10ML
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GP10DL
Abstract: GP10GL GP10JL GP10KL GP10ML
Text: ZOWIE Low VF Rectifier Diode GP10DL THRU GP10ML Low VF Rectifier Diode VF < 0.90V @IF = 1A FEATURES IFSM = 50Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop o 1.0 Ampere operation at TA=75 C with no thermal runaway
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GP10DL
GP10ML
50Amp
DO-204AL
DO-204AL
MIL-STD-750,
300uS
GP10GL
GP10JL
GP10KL
GP10ML
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gf10ml
Abstract: No abstract text available
Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 1.0A GF10DL THRU GF10ML VF < 0.91V @IF = 1A FEATURES Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction High surge current capability Ideal for surface mount automotive applications
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GF10DL
GF10ML
50Amp
DO-214AC
DO-214AC
gf10ml
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Untitled
Abstract: No abstract text available
Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 1.0A GF10DL THRU GF10ML VF < 0.91V @IF = 1A FEATURES Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction High surge current capability Ideal for surface mount automotive applications
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GF10DL
GF10ML
50Amp
DO-214AC
DO-214AC
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10205 transistor
Abstract: all transistor E80276 QM50TB-2H
Text: MITSUBISHI TRANSISTOR MODULES QM50TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-2H • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75
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QM50TB-2H
E80276
E80271
10205 transistor
all transistor
E80276
QM50TB-2H
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QM50DY-2H
Abstract: E80276
Text: MITSUBISHI TRANSISTOR MODULES QM50DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-2H • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75
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QM50DY-2H
E80276
E80271
QM50DY-2H
E80276
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E80276
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50E2Y/E3Y-2H • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75
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QM50E2Y/E3Y-2H
E80276
E80271
E80276
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QM50TB-2HB
Abstract: E80276 all transistor
Text: MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-2HB • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750
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QM50TB-2HB
E80276
E80271
100mA
QM50TB-2HB
E80276
all transistor
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QM50DY-2HB
Abstract: TRANSISTOR TC 100 E80276 transistor VCE 1000V
Text: MITSUBISHI TRANSISTOR MODULES QM50DY-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-2HB • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750
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QM50DY-2HB
E80276
E80271
100mA
QM50DY-2HB
TRANSISTOR TC 100
E80276
transistor VCE 1000V
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A14A
Abstract: A14F
Text: A14A, A14C, A14E A14F, A14P 1A, 50V - 1000V Diodes Decem ber 1993 Features Package • High-Temperature M etallurglcally Bonded, No Com pression Contacts as Found In Diode-Constructed Rectifiers JEDEC STYLE 0 0 -2 0 4 TOP VIEW • Glass-Passivated Junction
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OCR Scan
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MIL-STD-19500
A14A
A14F
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IXYS IXBOD
Abstract: lt 747 bod ixys
Text: D IX Y S Breakover Diodes Applications • Transient voltage protection • High-voltage switches • Crowbar • Lasers • Pulse generators o- 1998 IXYS All rights reserved H -1 mmm IXBOD 1 -06.10 1A. X U Single Breakover Diode =600 - 1000V ^AVM ”
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035x2m
IXYS IXBOD
lt 747
bod ixys
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DSA10
Abstract: DSA10G DSA10J DSA10L
Text: Ordering number :EN711D N 0 .7 I ID DSA10 / Diffused Junction Type Silicon Diode 1.0A Power Rectifier F e a tu re s • P lastic molded type •P eak reverse voltage V r m —“ 600 to —1000V • Average rectified cu rren t Iq = 1A A b so lu te M ax im u m R a tin g s
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PDF
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DSA10
DSA10G
DSA10J
DSA10L
H-29--j
DSA10
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IC 7805
Abstract: 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912
Text: I WAY-TECH 33E D E N T E R P R I S E CO 'T'-dB»-’h Tb31flHE O O O O O O l *\ —nfemmm sBM&m > SILICON REGULAR RECTIFIERS FAST RECOVERY RECTIFIERS 1N4001 - 1N4007 1A, 50V-1000V 1N5391 - 1N5399 (1.5A, 50V-1000V) 1N5400 - 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V)
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1N4001
1N4007
0V-1000V)
1N5391
1N5399
1N5400
1N5408
S6A05
IC 7805
7812 voltage regulator 5A
REGULATOR IC 7805
REGULATOR IC 7824
1n1001
6a smd transistor
REGULATOR IC 7905
7824 5A
REGULATOR IC 7812
7812 7912
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM50HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50HY-2H Ic Collector current. 50A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized
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QM50HY-2H
E80276
E80271
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