philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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nec d 1590
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE _ NDL7564P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7564P Series are 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode
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OCR Scan
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NDL7564P
1550nm
400mA
NDL7564P1
400mA,
400mA
nec d 1590
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NDL7563P1
Abstract: Pulsed Laser 1550nm
Text: NEC / / _ PRELIMINARY DATA SHEET_ LASER DIODE NDL7563P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7563P Series are 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode
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OCR Scan
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NDL7563P
1550nm
400mA
NDL7563P1
400mA
400mA,
10t/s
Pulsed Laser 1550nm
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diode 1,5k
Abstract: diode 1fp
Text: _ PRELIMINARY DATA SHEET_ NEC / / LASER DIODE NDL7514P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7514P Series are 1310nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode
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OCR Scan
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NDL7514P
1310nm
400mA
NDL7514P1
400mA
1Fp-400mA,
10t/s
diode 1,5k
diode 1fp
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PW10A
Abstract: No abstract text available
Text: NEC / ' PRELIMINARY DATA SHEET_ LASER DIODE NDL7513P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7513P Series are 1310nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diodes
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OCR Scan
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NDL7513P
1310nm
110mW
400mA
NDL7513P1
P10470EJ1V0DS00
400mA
PW10A
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1310nm otdr
Abstract: No abstract text available
Text: PRELIMINARY NEC / _ / DATA SHEET LASER DIODE MODULE NDL7513P.NDL7513P1 InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION ABSOLUTE MAXIMUM RATINGS Tc=25*C mA V *C 'C *C Ir P 600 Pulsed Forward Current*l Vr 2.0 Reverse Voltage
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OCR Scan
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NDL7513P
NDL7513P1
1310nm
400mA,
400mA.
400mAiPW
1310nm otdr
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thermistor 40k
Abstract: NEC LASER DIODE PIN DIP thermo electrical cooler module NDL5762P
Text: N E C ELECTRONICS INC bEE D • b4B?S25 0037^05 3Sb « N E C E DATA SHEET NEC LASER DIODE MODULE NDL5762P ELECTRON DEVICE 1 310 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DC-PBH PULSED LASER DIODE MODULE DESCRIPTION NDL5762P is a 1310 nm pulsed laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is
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OCR Scan
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b4S7S25
NDL5762P
NDL5762P
400mA,
JT-40K
T-40K
thermistor 40k
NEC LASER DIODE PIN DIP
thermo electrical cooler module
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A2601
Abstract: 7564P
Text: PRELIMINARY DATA S H E E T NEC / LASER DIODE MODULE / 7564P.NDL7564P1 NDL InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION ABSOLUTE MAXIMUM RATINGS Tc=25*C IF P 600 Pulsed Forward Current*1 Vr Reverse Voltage 2.0 Tc -20 to +60
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OCR Scan
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7564P
NDL7564P1
1550nm
400mA,
400mA
400niA
A2601
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PDF
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400DIA
Abstract: No abstract text available
Text: PRELIMINARY N E C / - ' DATA SHEET LASER DIODE MODULE NDL 7 5 1 4 P. NDL7 5 1 4 P1 InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION ABSOLUTE MAXIMUM RATINGS Tc=25*C I FP 600 Pulsed Forward Current11 V* 2.0 Reverse Voltage
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OCR Scan
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1310nm
Current11
400mA
400mA,
400diA.
400iiiA,
400tnA.
400mA.
400DIA
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PDF
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2050I
Abstract: 1fp3
Text: Single Diode M1FP3 Schottky Barrier Diode mtmm o u t l i n e ft y - K v - ? 30V 1.29A Cathode m ark _ [P 6 N Feature • /JvgySMD Small SMD Ultra-Low V f= 0.4 V • Î b ÎS V f=0.4V IV I x D .y h ïa ^ - (« T ype No. Dale code Main Use • DCth^ORffl
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OCR Scan
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It50Hz
2050I
1fp3
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode single Diode mwm o u t lin e Package : M1F M1FP3 » y -K -r-» 30V 1.29A Feature C a th o d e n w ir k |P 6 N • /J ^ S M D • Small SMD • Ì81S V f =0.4V • Ultra-Low V f=0.4V I — w — ^P yM dfr W T ype No. Main Use Date code
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OCR Scan
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50IIz
J532-1)
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PDF
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GaAs 850 nm Infrared Emitting Diode
Abstract: LN52
Text: Panasonic Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems • Features • • • • High-power output, high-efficiency : PQ = 6 mW typ. Wide directivity, matched for external optical systems : 0 = 100 deg.
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OCR Scan
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100mA
GaAs 850 nm Infrared Emitting Diode
LN52
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PDF
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BUK657
Abstract: BUK657-500A BUK657-500B BUK657-500C T0220AB
Text: N AMER PHILIPS/DISCRETE 5SE D ^53^31 QD20710 T PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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OCR Scan
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fab53131
D2D71D
BUK657-500A
BUK657-500B
BUK657-500C
BUK657
-500A
-500B
-500C
ID/100
BUK657-500C
T0220AB
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PDF
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diode 1fp
Abstract: TLP3520A
Text: GaAs IRED TLP3520A Q. PHOTO-TRIAC TRIAC DRIVFR Unit in mm PROGRAMMABLE CONTROLLERS AC-OIJTPIIT MODULE SOLID STATE RELAY The TOSHIBA TLP3520A consists of a photo-triac optically coupled to n gallium arsenide infrared emitting diode in a H> lead plastic DTP package.
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OCR Scan
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TLP3520A
TLP3520A
2500Vrnis
P3520A
diode 1fp
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PDF
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LNJ418Q8YRU
Abstract: No abstract text available
Text: Approved Designed Checked / - v / A P P L I DEVELOPMENT SPECIFICATION TEMPORARY P/N : Amber Light Emitting Diode Indicators C A T I ON M A T E R I A L GaAsP O V Attached T L I L N J4 1 8 Q 8 Y R U N E A B S O L U T E Topr *1 1FP Tstg M A X I M U M 60 60 20
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OCR Scan
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LNJ418Q8YRU
KB-H-022-0
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PDF
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transistor 1fp
Abstract: 52ga 414n 53m diode
Text: HÌLS1S1M/S2M/53M MINI MOLD TYPE PHOTO COUPLER • OUTLINE typ. ■ GENERAL DESCRIPTION The NJL5151M series are small package dual-in-line photo couplers, which consist of high power infrared emitting diode and high sensitve Si photo transistor. IL standards (File N o.E8256I)
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OCR Scan
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LS1S1M/S2M/53M
NJL5151M
E8256I)
52M/53M
NJL5151M/52M/53M
transistor 1fp
52ga
414n
53m diode
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PDF
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TLP3
Abstract: No abstract text available
Text: GaAs IRED a PHOTO-TRANSISTOR TLP330 TLP330 PROGRAM MABLE CONTROLLERS A C /D C -IN P U T MODULE TELECOM M UNICATION The TOSHIBA TLP330 consists of a photo-transistor optically coupled to two gallium arsenide infrared em itting diode connected inverse parallel in a six lead plastic DIP package. This is suitable for
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OCR Scan
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TLP330
TLP330)
TLP330
150mA.
150mA
5000Vrms
UL1577,
E67349
l00//a
TLP3
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PDF
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Untitled
Abstract: No abstract text available
Text: GaAs IRED & PHOTO-TRIAC TRIA C TLP3520 D R IV E R PROGRAMMABLE CONTROLLERS AC-OUTP UT MODULE S O L I D S T A T E R E LA Y The TOSHIBA TLP3520 consists of a photo-triac optically coupled to a gallium arsenide infrared emitting diode in a 16 lead plastic DIP package.
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OCR Scan
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TLP3520
TLP3520
2500Vrms
E67349
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PDF
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Untitled
Abstract: No abstract text available
Text: Checked Approved Designed DEVELOPMENT SPECIFICATION TEMPORARY P / N : LN.Í 8 1 1 K 8 S R A Soft Orange Light Emitting Diode Y APPLICATION Indicatiors M A T E R I A L GaAsP O A M R U T L B S O L A X I A T I I U M N NE T E UM G S CONDITION *1 I Voltage 60 60
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OCR Scan
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G09-lim
KB-H-022-01Ã
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PDF
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133ln3
Abstract: LN38GCPX
Text: s & ÉP « Approved Checked fS*\ ® ÉP ft Checked Designed W ft\/T Y P E ^^/A P P L IC A T IO N /S T R U CTURE ^ / o u t l in e D # GaP Pft i a i « 1 3 - 1 PRODUCT STANDARDS LN 3 8GCPX 'i ^ — K (G aP /G reen Light Em itting Diode(GaP) M IS Æ /In d icato rs
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OCR Scan
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14/Optical
133ln3
LN38GCPX
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PDF
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Untitled
Abstract: No abstract text available
Text: Approved Checked Designed DEVELOPMENT SPECIFICATION TEMPORARY P / N : LN J 3 1 1 G8 P R A Y Green Light Emitting Diode A P P L I C A T I ON M A T E R I AL GaP O Attached U T L I N E Indicatiors A B S O L U T E M A X I M U M R A T I N G S *1 I FP CONDITION
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OCR Scan
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KB-H-022-018B
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PDF
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