DIODE 1SS133
Abstract: 1SS133
Text: 1SS133 SMALL SIGNAL DIODE VOLTAGE: 90V CURRENT: 130mA FEATURE DO-34 Silicon Single Junction Diode Fast switching Diode MECHANICAL DATA Case: DO-34 Glass case Polarity: color band denotes cathode Mounting position: any Weight: approx . 0.12g Dimensions in inches and millimeters
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1SS133
130mA
DO-34
DO-34
100uA
100mA
to100KHZ
1-Jun-03
DIODE 1SS133
1SS133
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diode 1n4148
Abstract: 1N4148 75v 150mA diode DIODE 1N4148 characteristics thermal diode 1n4148
Text: 1N4148 SMALL SIGNAL DIODE VOLTAGE: 100V CURRENT: 150mA FEATURE DO-35 Silicon Single Junction Diode Fast switching Diode MECHANICAL DATA Case: DO-35 Glass case Polarity: color band denotes cathode Mounting position: any Weight: approx . 0.13g Dimensions in inches and millimeters
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1N4148
150mA
DO-35
DO-35
100uA
to100KHZ
1-Jul-03
diode 1n4148
1N4148 75v 150mA diode
DIODE 1N4148 characteristics
thermal diode 1n4148
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HP8640B
Abstract: HP83595A HSMP-3880 HP11612A HP436A HSMP-3820 HSMP-3830 HSMP-3890 HP8565
Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mounted PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is generally treated as a current controlled
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5091-4932E
5966-0780E
HP8640B
HP83595A
HSMP-3880
HP11612A
HP436A
HSMP-3820
HSMP-3830
HSMP-3890
HP8565
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hp11612a
Abstract: HP8640B HP8565A HP436A HP83595A HSMP-3820 Microwave PIN diode HSMP-3830 HSMP-3880 HSMP-3890
Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mounted PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is generally treated as a current controlled
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6J66
Abstract: FP25R12W2T4 mpf271 application ntc-thermistor
Text: Technische Information / technical information FP25R12W2T4_B11 IGBT-Module IGBT-modules EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode
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FP25R12W2T4
6J66
mpf271
application ntc-thermistor
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he HI 1J series consists o f a gallium arsenide infrared emitting diode coupled with a light activated silicon bilateral switch, which functions
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H11J1-H11J5
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diode 1,5k
Abstract: diode 1fp
Text: _ PRELIMINARY DATA SHEET_ NEC / / LASER DIODE NDL7514P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7514P Series are 1310nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode
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NDL7514P
1310nm
400mA
NDL7514P1
400mA
1Fp-400mA,
10t/s
diode 1,5k
diode 1fp
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SMD zener 562
Abstract: S102T current regulative diode T 5 Z 27-2.e S501T S-501T S-123T s-562t 562T CRD Diode crd e102
Text: CURRENT REGULATIVE DIODE CRD CRD is a diode which supplies constant current to an electric circuit, even when power supply voltage fluctuations or load impedance fluctuations occur. CRD is used for current stabilization and current limiting. Part number z1 1J 2
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E-102
E-152
E-202
E-272
240kfi
120kfi
E-352
E-452
E-562
SMD zener 562
S102T current regulative diode
T 5 Z 27-2.e
S501T
S-501T
S-123T
s-562t
562T
CRD Diode
crd e102
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340 opto isolator
Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP S7E T> Optoisolator Specifications_ 74bbflSl 0004500 44fi I< 3T Y /* H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he H l 1J series consists o f a gallium arsenide infrared emitting diode
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74bbflSl
H11J1-H11J5
74bbfl51
0DQ4S11
340 opto isolator
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Pulsed Laser 1550nm
Abstract: No abstract text available
Text: , N E C / / _PRELIMINARY DATA SHEET_ LASER DIODE NDL7553P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7553P Series are 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode
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NDL7553P
1550nm
145mW
1000mA
NDL7553P1
10//s,
1000mA
Pulsed Laser 1550nm
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET PHOTO DIODE NDL8800P 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS ^120 fjm InGaAs PIN PHOTO DIODE MINI-DIL PIGTAILED MODULE DESCRIPTION NDL8800P is an InGaAs PIN photo diode module with single mode fiber. NDL8800P is packaged in ceramic mini
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NDL8800P
NDL8800P
SM-9/125)
SM-9/125
100uA
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET PHOTO DIODE NDL8800P 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS ¿120 fjm InGaAs PIN PHOTO DIODE MINI-DIL PIGTAILED MODULE DESCRIPTION NDL8800P is an InGaAs PIN photo diode module with single mode fiber. NDL8800P is packaged in ceramic mini
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NDL8800P
NDL8800P
SM-9/125)
SM-9/125
NPL8800P
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MI32T
Abstract: No abstract text available
Text: CRO INFRARED EMITTING DIODE 02.94 “ 0.116 DESCRIPTION r 5 .L M I32T is GaAlAs infrared emiitting diode m olded in 3mm MI32T diam eter > Th 1.02 J V S ') (0.04) 0.75(0.03)_j max. 1J u clear transparent lens. 0.5 (0.02)~~ •2.5(0.1) ABSOLUTE MAXIMUM RATINGS
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MI32T
MI32T
100mA
160mW
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET |\| = C LASER DIODE NDL5728P, NDL5728P1 ELECTRON DEVICE 1 550 nm InGaAsP DC-PBH LASER DIODE COAXIAL MODULE W IT H SINGLEMODE FIBER DESCRIPTION NDL5728P and NDL5728P1 are 1 550 nm laser diode coaxial modules w ith singlemode fiber. It incorporates InGaAs m onitor
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NDL5728P,
NDL5728P1
NDL5728P
NDL5728P1
informL5735PA
NDL5736PA
14PIN
L5707P
NDL5738P
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1J2H
Abstract: No abstract text available
Text: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e H l 1J series consists o f a gallium a rse n id e in fra re d em itting diode co upled with a light activated silicon bilateral switch, w hich functions
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H11J1-H11J5
1J2H
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NEC LASER DIODE butterfly package
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET m LASER DIODE MODULE e ELECTRON DEVICE IMDL7660P 1 310 nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP M Q W -D FB LASER DIODE MODULE DESCRIPTION NDL7660P is a 1 310 nm 0 F 6 {Distributed Feed-Back laser diode, that has a newly developed Multi-Quantum Well MOW)
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IMDL7660P
NDL7660P
NEC LASER DIODE butterfly package
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BB405B
Abstract: No abstract text available
Text: b*ìE D N AMER PHILIPS/DISCRETE • bb53^31 OQEbMll Ö74 I IAPX '' BB405B A UHF VARIABLE CAPACITANCE DIODE The BB405B is a silicon variable capacitance diode in a hermetically sealed glass envelope and intended fo r application in UHF tuners. This miniature diode can be mounted on a 2 E 5,08 mm pitch.
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bb53T31
BB405B
BB405B
002bm3
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P RECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M U NICATIO NS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5653P is a 1 550 nm phase-shifted D F6 Distributed Feed-Back laser diode B u tte rfly package module w ith optical isola
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NDL5653P
NDL5653P
NDL5600D
NDL5650D
NDL5600D1
NDL5650D1
NDL5604P
NDL5603P
NDL5654P
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5603P ELECTRON DEVICE 1 310 nm OPTICAL FIBER CO M M U N IC A TIO N S InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5603P is a 1 310 nm phase*5hifted D FB D istributed Feed-Back laser diode Butterfly package m odule w ith optical isola
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NDL5603P
NDL5603P
JT-40K
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LC7566
Abstract: No abstract text available
Text: DATA SHEET NEC LASER DIODE MODULE N D L5654P RECTRON DEVICE 1 550 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5654P is a 1 550 nm phase-shifted DFB Distributed Feed-Back laser diode DIP module w ith singlemode fiber. It incorpo
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L5654P
NDL5654P
NDL5654P
LC7566
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diode DB 3 C
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P ELECTRON DEVICE 1 550 nm O PTICA L FIB ER COM M UN ICATION S InG aA sP PH A SE-SH IFTED D FB-D C-PBH LA SER DIODE M ODULE DESCRIPTION NDL5653P ¡s a 1550 nm phase-shifted DFB Distributed Feed-Back laser diode Butterfly package module with optical isola
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NDL5653P
L5653P
diode DB 3 C
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ERG75
Abstract: H150 T810 T930 EB4P
Text: ERG75 45A JS S S a fc ^ - f * - K : O u tlin e D r a w in g s FAST RECOVERY DIODE M f t - R • F e a tu re s : t — Pl aner chip • V 7 Y i)1j '<1)— Soft recovery type • Stud mounted : Applications • Switching power supplies Free-wheel diode •
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ERG75
ERG75
50HzjBÂ
iLfti80\
eBTB30Â
egTS30S3^
I95t/R89)
H150
T810
T930
EB4P
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d2f20
Abstract: No abstract text available
Text: mm R ectifier Diode Single Diode • O U T L IN E D IM E N S IO N S Case : 2 F Type D2FD Unit • Cathode mark 600V 1.4A I :=■ OCSI LlCVÌ coco ' \ Type No. Class 5 " cvj a % I 2.5 ^ 6.1 Date code y ;u 1j > ?> \°" j K D# # / > Standard soldering pad C0.8
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D2F20
D2F60
d2f20
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