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    DIODE 1N4001 RESISTANCE Search Results

    DIODE 1N4001 RESISTANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 1N4001 RESISTANCE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 thru 1N4007 Pb Free Plating Product Pb 1N4001 thru 1N4007 1.0 Ampere DO-41 Package Silicon Diode DO-41 Features Unit: inch mm • Low forward voltage drop • High current capability • High surge current capability .034(.86) 1.0(25.4)MIN. .028(.71)


    Original     		1N4001 1N4007 DO-41 DO-41 MIL-STD-202 PDF

    diode 1N4001 specifications

    Abstract: No abstract text available
    Text: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic


    Original     		1N4001 1N4007 DO-41, MIL-STD-202, DO-41 diode 1N4001 specifications PDF

    SURFACE MOUNT SILICON RECTIFIER

    Abstract: DO-214AC, SMA 1N4007
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) SURFACE MOUNT SILICON RECTIFIER DO-214AC, SMA 1N4007 PDF

    diode 1N4001 specifications

    Abstract: CHARACTERISTICS DIODE 1N4007 free diode 1n4001 specifications of 1n4007 diode 1N4001-1N4007 datasheet 1N4001/1n4007 diode datasheet DIODE 1N4001 1N4001 DIODE SPECIFICATIONS DIODE 1N4001 WORKING 1N400X
    Text: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per


    Original     		1N4001 1N4007 DO-41, MIL-STD-202, DO-41 diode 1N4001 specifications CHARACTERISTICS DIODE 1N4007 free diode 1n4001 specifications of 1n4007 diode 1N4001-1N4007 datasheet 1N4001/1n4007 diode datasheet DIODE 1N4001 1N4001 DIODE SPECIFICATIONS DIODE 1N4001 WORKING 1N400X PDF

    1N4007 sma

    Abstract: 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA 1N4001 1N4007 NRD4003
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) 013mm) 50mVp-p 1N4007 sma 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA NRD4003 PDF

    surface mount diode w1

    Abstract: 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) RS-481-A surface mount diode w1 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount PDF

    1N4007 sma

    Abstract: DIODE 4004 4004 diode 1N4001 SMA SURFACE MOUNT SILICON RECTIFIER surface mount 1n4007 1N4007 DO-214AC 1N4001 1N4007 NRD4007
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) 1N4007 sma DIODE 4004 4004 diode 1N4001 SMA SURFACE MOUNT SILICON RECTIFIER surface mount 1n4007 1N4007 DO-214AC NRD4007 PDF

    surface mount 1n4007

    Abstract: No abstract text available
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) RS-481-A surface mount 1n4007 PDF

    diode 4007 details

    Abstract: 1N4007 SURFACE MOUNT Diode ttr
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) 013mm) 50mVp-p diode 4007 details 1N4007 SURFACE MOUNT Diode ttr PDF

    1n4001 trr

    Abstract: No abstract text available
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) 1n4001 trr PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per


    Original     		1N4001 1N4007 DO-41, MIL-STD-202, DO-41 PDF

    1N400x

    Abstract: No abstract text available
    Text: 1N4001 – 1N4007 1.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data       


    Original     		1N4001 1N4007 DO-41, MIL-STD-202, DO-41 1N400x PDF

    CHARACTERISTICS DIODE 1N4007

    Abstract: DIODE 1N4004 DIODE 1N4001 DIODE 1N4007 equivalent components of diode 1n4001 DIODE 1N4002 DIODE 1n4005 1N4007 DIODE data sheet 1N4007 diode 1n4007 diode datasheet
    Text: 1N4001 thru 1N4007 1.0A Standard Diode Features: • • • • • Diffused Junction Low Forward Voltage Drop High Current Capability High Surge Current Capability RoHS Compliant Mechanical Data: • • • • • • Case: DO−41, Molded Plastic Terminals: Plated Leads Solderable per MIL−STD−202, Method 208


    Original     		1N4001 1N4007 DO-41, MIL-STD-202, 1N4001 CHARACTERISTICS DIODE 1N4007 DIODE 1N4004 DIODE 1N4001 DIODE 1N4007 equivalent components of diode 1n4001 DIODE 1N4002 DIODE 1n4005 1N4007 DIODE data sheet 1N4007 diode 1n4007 diode datasheet PDF

    CHARACTERISTICS DIODE 1N4007

    Abstract: 1N4007 BL diode LT 1n4007 1N4004 LITEON 1N4007 liteon 1n4004 bl DIODE 1N4001 characteristics l4007 "Power Diode" 1N4007 DIODE 1N4001 WORKING
    Text: 1N4001/L–1N4007/L Vishay Lite–On Power Semiconductor 1.0A Rectifier Features D Diffused junction D High current capability and low forward A – 405 voltage drop D Surge overload rating to 30A peak D Low reverse leakage current D Plastic material – UL Recognition flammability


    Original     		1N4001/L 1N4007/L 1N4001/L 1N4002/L 1N4003/L 1N4004/L 1N4005/L 1N4006/L D-74025 CHARACTERISTICS DIODE 1N4007 1N4007 BL diode LT 1n4007 1N4004 LITEON 1N4007 liteon 1n4004 bl DIODE 1N4001 characteristics l4007 "Power Diode" 1N4007 DIODE 1N4001 WORKING PDF

    diode 1N4001 specifications

    Abstract: CHARACTERISTICS DIODE 1N4007 DIODE 1N4001 characteristics silicon diode 1N4001 specifications OF 1N4001 DIODE Diode Marking 1N4004 surge current DIODE 1N4007 CHARACTERISTICS DIODE 1N4006 1N4007 10A features of DIODE 1N4001
    Text: Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2


    Original     		1N4001 1N4007 1000hrs. MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 diode 1N4001 specifications CHARACTERISTICS DIODE 1N4007 DIODE 1N4001 characteristics silicon diode 1N4001 specifications OF 1N4001 DIODE Diode Marking 1N4004 surge current DIODE 1N4007 CHARACTERISTICS DIODE 1N4006 1N4007 10A features of DIODE 1N4001 PDF

    silicon diode 1N4001 specifications

    Abstract: 1N4001 rectifier diode 1N4001 specifications
    Text: Silicon Rectifier Formosa MS 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2


    Original     		1N4001 1N4007 MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1051 silicon diode 1N4001 specifications 1N4001 rectifier diode 1N4001 specifications PDF

    diode cross reference 1N4007

    Abstract: diode cross reference 1N4002
    Text: Formosa MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 List List. 1 Package outline. 2


    Original     		1N4001 1N4007 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. diode cross reference 1N4007 diode cross reference 1N4002 PDF

    CHARACTERISTICS DIODE 1N4007

    Abstract: diode 1N4001 specifications 1N4007 RECTIFIER DIODE DIODE 1N4001 specifications of 1n4007 diode data sheet 1N4007 diode diode 1N4007 specifications diode cross reference 1N4002 1n4007 diode datasheet DIODE 1N4004
    Text: Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2


    Original     		1N4001 1N4007 MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. CHARACTERISTICS DIODE 1N4007 diode 1N4001 specifications 1N4007 RECTIFIER DIODE DIODE 1N4001 specifications of 1n4007 diode data sheet 1N4007 diode diode 1N4007 specifications diode cross reference 1N4002 1n4007 diode datasheet DIODE 1N4004 PDF

    CHARACTERISTICS DIODE 1N4002

    Abstract: DIODE 1N4001 DIODE 1N4001 VALUE OF MAX CURRENT DIODE 1N4001 characteristics diode 1N4001 specifications PL317F3 pin diagram ic lm317 1N4001 1N4002 2N3822
    Text: CYStech Electronics Corp. Spec. No. : C513F3 Issued Date : 2003.05.24 Revised Date : . . Page No. : 1/9 Three Terminal Adjustable Output Positive Voltage Regulators PL317F3 The PL317F3 is an adjustable 3–terminal positive voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of 1.2 V to 37 V.


    Original     		C513F3 PL317F3 PL317F3 UL94V-0 CHARACTERISTICS DIODE 1N4002 DIODE 1N4001 DIODE 1N4001 VALUE OF MAX CURRENT DIODE 1N4001 characteristics diode 1N4001 specifications pin diagram ic lm317 1N4001 1N4002 2N3822 PDF

    diode rectifier 1n4001

    Abstract: NIC Components 1N4007 CHARACTERISTICS DIODE 1N4007 rating NRD4007
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250°C/10 SECONDS


    OCR Scan     		1N4001 1N4007 EIA-RS-481) NRD4001 NRD4007) diode rectifier 1n4001 NIC Components 1N4007 CHARACTERISTICS DIODE 1N4007 rating NRD4007 PDF

    1N4007 operating frequency

    Abstract: CHARACTERISTICS DIODE 1N4007 LN4007 diode ln4007 1N4007 RECTIFIER DIODE LN4004 diode DIODE 1N4001 surge current DIODE 1N4007 DIODE 1N4001 characteristics LN4004
    Text: SILICON RECTIFIER DIODE ÎA/IOO— 1000V 1N4001~1N4007 FEATURES • Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability « 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S \ Voltage Rating type


    OCR Scan     		1N4001 1N4007 7to27 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 operating frequency CHARACTERISTICS DIODE 1N4007 LN4007 diode ln4007 1N4007 RECTIFIER DIODE LN4004 diode DIODE 1N4001 surge current DIODE 1N4007 DIODE 1N4001 characteristics LN4004 PDF

    1N4007 operating frequency

    Abstract: IC 1N4007 DIODE 1N4001 RESISTANCE 1M4002 1N4001 SILICON diode 1N4007 diode frequency DIODE 1N4001 characteristics 1N4001 current rating diode 1N4001 CHARACTERISTICS DIODE 1N4007 rating
    Text: SILICON RECTIFIER DIODE ia 1N4001— 1N4007 / i o o ~ io o o v FEATURES ° Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0 High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S "\^TYPE Voltage Rating


    OCR Scan     		1N4001-- 1N4007 1N4001 1M4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4001~ 1N4007 operating frequency IC 1N4007 DIODE 1N4001 RESISTANCE 1N4001 SILICON diode 1N4007 diode frequency DIODE 1N4001 characteristics current rating diode 1N4001 CHARACTERISTICS DIODE 1N4007 rating PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON RECTIFIER DIODE 1N4001— 1N4007 ia / ioo~ iooov FEATURES 2 .7 Ç 1 0 6 W 2.3C091 • Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.9 .035)nTA 0.7(.027) ° High Surge Capability 27(1.06) MIN o 52mm Inside Tape Spacing Package Available


    OCR Scan     		1N4001â 1N4007 3C091) 2C205) 1N4002 1N4003 1N4004 1N4005 1N4006 PDF

    n4004 diode

    Abstract: n4005 N4002 diode N4003GL diode n4002 N4004 N4003 diode 1N4001 specifications DIODE 1N4001 WORKING n4005 diode
    Text: 1N4001 G/L—1N4007G/L Vishay Lite-On Power Semiconductor 1.0A Glass Passivated Rectifier Features • Glass passivated die construction • Diffused junction • High current capability and low forward voltage drop • Surge overload rating to 30A peak •


    OCR Scan     		1N4001 1N4007G/L DO-41 N4002 N4003 N4004 N4005 N4006 N4007G n4004 diode N4002 diode N4003GL diode n4002 diode 1N4001 specifications DIODE 1N4001 WORKING n4005 diode PDF