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    DIODE 1N951 Search Results

    DIODE 1N951 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 1N951 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SQ210

    Abstract: MV2112 EP1014 MV2209 SQ212 sq201 MV2201 MV2107 1N4815 ha1915
    Text: T A B L E OF C O NTENTS GLASS PACKAGED HERM ETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance Page No. -5 7 7 7 10 6 6 6 6 ABRUPT 1N951 1N9S6 . 1N4786 1N4815A. B . . . 1N5139 1N51485A, B .


    OCR Scan     		1N951 1N4786 1N4815A. 1N5139 1N51485A, 1NB441A 1N5456A, 1N5461A 1N5476A, 1N5461 SQ210 MV2112 EP1014 MV2209 SQ212 sq201 MV2201 MV2107 1N4815 ha1915 PDF

    v2308

    Abstract: V23083 v2303 V2307 sq201 MV2201 EP1014 V2306 V2107 V2209
    Text: TA B L E OF C O N TE N TS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance S LIG H T HYPERABRUPT Page No. ABRUPT H A 1 9 1 5 A - H A 1 9 5 0 A , B, C 1N951 - 1 N 9 5 6 . 1N 4786- 1N 4815A , B . . . 1N 5 1 3 9 - 1 N 5 1 4 8 5 A , B . .


    OCR Scan     		1N951 PC107 SQ181 V2203 V2205 V2209 V2303 V2304 V2305 V2306 v2308 V23083 V2307 sq201 MV2201 EP1014 V2107 PDF

    1N3627

    Abstract: IN951 1N950 1N951 1N952 1N953 1N954 1N955 1N956 V100G
    Text: TE L •DYNE COMPONENTS EâE D f i T1 7b a e T -o 7 - J QQQbL.47 1 GENERAL P U R P O SE 1N950-956 S IL IC O N E P IT A X IA L V A R A C T R O N V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S V20G-100G GEOMETRY 415 • ALL EPITAXIAL CONSTRUCTION (P + N N +


    OCR Scan     		fiT17bà 1N950-956 V20G-100G V20G-100G 1N3627 IN951 1N950 1N951 1N952 1N953 1N954 1N955 1N956 V100G PDF

    diode 1N951

    Abstract: teledyne crystalonics 1N3628
    Text: VARACTOR SELECTO R GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current <10nA low Cost Comments <1.0M* R e p lace s M V 8 3 0 -M V 8 4 0 D O -7 G la s s CV830C V 840 X CV1006-16CV1106-16 X X CV1620CV1650


    OCR Scan     		100pf CV830-CV840 MV830-MV84G CV1006-16-CV1106-16 FV1006-16, FV1106-16 CV1620-CV1650 MV1620-MV1650 CV1652-CV1666 MV1652-MV1666 diode 1N951 teledyne crystalonics 1N3628 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N950 I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . thru 1N956B VOLTAGE VARIABLE CAPACITORS General Purpose Applications ELECTRICAL CHARACTERISTICS i CHARACTERISTICS - 1 at Ta = 25 °C unless otherwise specified TEST CONDITIONS Min. Typ. Max.


    OCR Scan     		1N950 1N956B 10Vdc TD0D37fl 0000SSE PDF

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


    OCR Scan     		A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17 PDF

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


    OCR Scan     		A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82 PDF

    2u20 diode

    Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
    Text: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors


    OCR Scan     		1-800-232-CODI 1N6003B 1N6004B 1N6005B 1N6006B 1N6007B 1N6008B 1N6009B 1N6010B 1N6011B 2u20 diode 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218 PDF

    1N3182

    Abstract: 1N3946 1N4598 T-Cl-19 1N3555 1N4788A 1N4794 1N5470A 1N3552 1N951
    Text: 17 7 5 4 7 0 C O D I SEMICONDUCTOR INC TD 9 0 D 00581 D D eT J 1 7 7 5 4 7 0 QODDSfll 3 |~~ “TX li Ü CODI Semiconductor,3 Inc. iE°EC"lGISTERED VO LTAG E V A R IA B L E JEDEC REGISTERED VOLTAGE VARIABLE CAPACITOR c a p a c it o r s SPECIFICATION LIST TYPE


    OCR Scan     		DETJ1775470 1N950 1N951 1N952 1N953 1N954 1N955 1N956 1N3182 1N35S1 1N3946 1N4598 T-Cl-19 1N3555 1N4788A 1N4794 1N5470A 1N3552 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF