Untitled
Abstract: No abstract text available
Text: DSA 300 I 200 NA tentative V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 300 A 0.88 V Part number DSA 300 I 200 NA 2 1 3 4 Backside: Isolated Features / Advantages: Applications: Package:
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OT-227B
DSA300I200NA
DSA300I45NA
DSA300I100NA
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DIODE MARKING 534
Abstract: DSA 010
Text: DSA 15 IM 200 UC tentative V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages:
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O-252
30TYP
60747and
DIODE MARKING 534
DSA 010
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IXYS DSA 12
Abstract: No abstract text available
Text: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages:
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O-252
60747and
20110721a
IXYS DSA 12
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Untitled
Abstract: No abstract text available
Text: QR_1420T30 200 Amp/1400 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Diode Module 200 Amp/1400 Volts Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching.
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1420T30
Amp/1400
-400A/
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Untitled
Abstract: No abstract text available
Text: QRS1220T30 200 Amp/1200 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Diode Module 200 Amp/1200 Volts Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching.
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QRS1220T30
Amp/1200
-400A/
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Untitled
Abstract: No abstract text available
Text: QR_1220T30 200 Amp/1200 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Diode Module 200 Amp/1200 Volts Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching.
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1220T30
Amp/1200
-400A/
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Untitled
Abstract: No abstract text available
Text: QR_0620T30 200 Amp/600 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Diode Module 200 Amp/600 Volts Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching.
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0620T30
Amp/600
-400A/
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Untitled
Abstract: No abstract text available
Text: QRS1420T30 200 Amp/1400 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Diode Module 200 Amp/1400 Volts Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching.
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QRS1420T30
Amp/1400
-400A/
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Untitled
Abstract: No abstract text available
Text: QRS0620T30 200 Amp/600 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Diode Module 200 Amp/600 Volts Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching.
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QRS0620T30
Amp/600
-400A/
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Untitled
Abstract: No abstract text available
Text: BAV99 200 mA 70 V High Conductance Ultra-Fast Switching Diode Features Description • • • • The BAV99 is a 350 mW high-speed switching diode array with series-pair diode configuration. It achieves high-current conductivity, up to 200 mA, in a very small
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BAV99
BAV99
OT-23
BAV70
BAW56.
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Module, Diode 200A, 600V Single,
Abstract: CS241020 D-18
Text: CS241020 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Single Diode Module 200 Amperes/1000 Volts Description: Powerex Fast Recovery Single Diode Modules are designed for use in applications requiring fast
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CS241020
Amperes/1000
-400A/s,
Module, Diode 200A, 600V Single,
CS241020
D-18
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DPG15I200
Abstract: DPG15I200PA
Text: DPG 15 I 200 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 35 ns Part number DPG 15 I 200 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG15I200
DPG15I200PA
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DPG15I200
Abstract: dpg15i200pa DPG 15 I 200 PA
Text: DPG 15 I 200 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 35 ns Part number DPG 15 I 200 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG15I200
dpg15i200pa
DPG 15 I 200 PA
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OF IGBT BSM 200 GAL 120 DN2 1200V 290A
Abstract: HB 200GAL igbt module bsm 200 AC DC chopper AC - DC chopper
Text: BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A IC Package Ordering Code HB 200GAL C67070-A2301-A70
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BSM300GA120DN2
200GAL
C67070-A2301-A70
Nov-24-1997
Sep-21-98
OF IGBT BSM 200 GAL 120 DN2 1200V 290A
HB 200GAL
igbt module bsm 200
AC DC chopper
AC - DC chopper
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200GAR
Abstract: BSM200GAR120DN2 BSM300GA120DN2 C67070-A2301-A70
Text: BSM 200 GAR 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAR 120 DN2 1200V 290A IC Package Ordering Code HB 200GAR C67070-A2301-A70
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BSM300GA120DN2
200GAR
C67070-A2301-A70
200GAR
BSM200GAR120DN2
BSM300GA120DN2
C67070-A2301-A70
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121-02A
Abstract: E72873 ixys dsei 12
Text: DSEI 2x 121 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 IFAVM = 2x 123 A VRRM = 200 V trr = 35 ns miniBLOC, SOT-227 B E72873 Type DSEI 2x 121-02A Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5
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OT-227
E72873
21-02A
121-02A
E72873
ixys dsei 12
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Untitled
Abstract: No abstract text available
Text: DSEI 2x 121 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 IFAVM = 2x 123 A VRRM = 200 V = 35 ns trr miniBLOC, SOT-227 B E72873 Type DSEI 2x 121-02A Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5
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OT-227
E72873
21-02A
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IXYS DSEI 2X121
Abstract: 121-02P 12102p 2x123
Text: DSEI 2x121 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 Type AC-1 IK-10 LN -9 VX-18 IFAVM = 2x123 A VRRM = 200 V trr = 35 ns DSEI 2x 121-02P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5
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2x121
IK-10
VX-18
2x123
121-02P
IXYS DSEI 2X121
121-02P
12102p
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D1471
Abstract: M7 zener A3K1
Text: DATA SHEET ZENER DIODE RD6.2Z ZENER DIODE 200 mW ESD PROTECTION 5 V Signal Line MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Type RD6.2Z is planar type zener diode possessing an allowable (Unit: mm) power dissipation of 200 mW. 2.8±0.2 0.4+0.1 −0.05 The purpose is ESD PROTECTION of 5 V Signal Line.
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BYV32E
Abstract: BYV32E-200 BYV32EB
Text: BYV32E-200 Dual rugged ultrafast rectifier diode, 20 A, 200 V Rev. 04 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 TO-220AB plastic package. 1.2 Features and benefits
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BYV32E-200
O-220AB)
BYV32E-200
BYV32E
BYV32EB
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BYV32E
Abstract: BYV32EB BYV32EB-200 BYV32EB200
Text: BYV32EB-200 Dual rugged ultrafast rectifier diode, 20 A, 200 V Rev. 04 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT404 D2PAK surface-mountable plastic package. 1.2 Features and benefits
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BYV32EB-200
OT404
BYV32EB-200
BYV32E
BYV32EB
BYV32EB200
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Untitled
Abstract: No abstract text available
Text: 1N4756A asi SILICON ZENER DIODE DESCRIPTION: The 1N4756A is a Silicon Regulator Diode for General Purpose Voltage Control Applications. MAXIMUM RATINGS 200 mA If 47 Vz 1 .0 P diss V W @ TA = 50 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C CHARACTERISTICS
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1N4756A
1N4756A
75ontrol
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zener diode 1N4756a
Abstract: 1N4756A
Text: 1N4756A asii SILICON ZENER DIODE DESCRIPTION: The 1N4756A is a Silicon Regulator Diode for General Purpose Voltage Control Applications. MAXIMUM RATINGS If 200 mA Vz 47 V Pd i s s 1.0 W @ Ta $ 50 °C Tj -65 0C to +200 0C Ts t g -65 0C to +200 0C m in im u m
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1N4756A
1N4756A
zener diode 1N4756a
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Untitled
Abstract: No abstract text available
Text: IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x161 lFAVM = 2x158 A = 35 ns 1 K2 vRSM VRRM V VRRM = 200 v Type f- 0 I •+-0 V miniBLOC, SOT-227 B K2 K1 200 DSEI 2x161-02A 200 Symbol Test Conditions Maximum Ratings (per diode) 100 158 600 A A A t = 10 ms (50 Hz), sine
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2x161
2x158
OT-227
2x161-02A
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