Untitled
Abstract: No abstract text available
Text: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.
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1N5408
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omni+spectra+20760
Abstract: BAT54C/BTA43
Text: Bulletin PD-20760 04/06 BAT54C SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.
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PD-20760
BAT54C
OT-23
omni+spectra+20760
BAT54C/BTA43
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20763 04/06 BAT54A SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.
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PD-20763
BAT54A
OT-23
PD-21124
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BAT54C
Abstract: PD-20760
Text: Bulletin PD-20760 04/06 BAT54C SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.
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PD-20760
BAT54C
12-Mar-07
BAT54C
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20763 04/06 BAT54A SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.
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PD-20763
BAT54A
08-Mar-07
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BAT54S
Abstract: BAT54S dc
Text: Final PD-20762 04/06 BAT54S SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.
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PD-20762
BAT54S
12-Mar-07
BAT54S
BAT54S dc
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20761 04/06 BAT54 SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.
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PD-20761
BAT54
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20760 04/06 BAT54C SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.
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PD-20760
BAT54C
150ded
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20761 04/06 BAT54 SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.
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PD-20761
BAT54
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20763 04/06 BAT54A SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.
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PD-20763
BAT54A
150merchantability,
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: Final PD-20762 04/06 BAT54S SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.
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PD-20762
BAT54S
BAT54S
OT-23
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ir54c
Abstract: BAT54C
Text: Preliminary Data Sheet PD-20760 12/01 BAT54C SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching
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PD-20760
BAT54C
OT-23
IR54C
ir54c
BAT54C
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IR54S
Abstract: BAT54S
Text: Preliminary Data Sheet PD-20762 12/01 BAT54S SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching
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PD-20762
BAT54S
OT-23
IR54S
IR54S
BAT54S
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diode 2076
Abstract: IR54S
Text: Preliminary Data Sheet PD-20762 12/01 BAT54S SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching
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PD-20762
BAT54S
IR54S
diode 2076
IR54S
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BAT54A
Abstract: No abstract text available
Text: Preliminary Data Sheet PD-20763 12/01 BAT54A SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching
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PD-20763
BAT54A
OT-23
IR54A
BAT54A
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VSMF9700
Abstract: "rain sensor" VSMF9700-GS08 VSMF9700-GS18 VSMF9700X01
Text: VSMF9700X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm FEATURES 94 8553 DESCRIPTION VSMF9700X01 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 package. VSMF9700X01 is dedicated to emitter operation and
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VSMF9700X01
VSMF9700X01
J-STD-020
AEC-Q101
18-Jul-08
VSMF9700
"rain sensor"
VSMF9700-GS08
VSMF9700-GS18
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Alpha Products
Abstract: ao4703 10A Schottky mosfet with schottky body diode
Text: AO4703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4703 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC
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AO4703
AO4703
AO4703L
AO4703L
Alpha Products
10A Schottky
mosfet with schottky body diode
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AO4705
Abstract: AO4705L
Text: AO4705 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4705 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC
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AO4705
AO4705
AO4705L
AO4705L
0E-01
0E-02
0E-03
0E-04
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vsmy3850gs08
Abstract: vsmy3850 VSMY3850-GS08
Text: VSMY3850 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • 94 8553 DESCRIPTION VSMY3850 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant intensity, high
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VSMY3850
J-STD-020
2002/95/EC
2002/96/EC
VSMY3850
11-Mar-11
vsmy3850gs08
VSMY3850-GS08
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Untitled
Abstract: No abstract text available
Text: VSMY3850X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • • 94 8553 DESCRIPTION VSMY3850X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant intensity,
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VSMY3850X01
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
VSMY3850X01
18-Jul-08
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TFR 463
Abstract: apt50m50 APT2*101D40J
Text: 2 3 2 2 3 3 1 1 4 1 SO 4 Anti-Parallel Parallel APT2X100D40J APT2X101D40J 27 2 T- 4 APT2X100D40J APT2X101D40J 400V 100A 400V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT2X100D40J
APT2X101D40J
APT2X100D40J
OT-227
TFR 463
apt50m50
APT2*101D40J
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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s1wb
Abstract: diode 2076 60Tstg 604-3 S1WBA60B S1WB 60 25 S1WB(A)60B 6043 s1wba20 50/SEMIKRON s1wb
Text: デュアルインライン型 Bridge Diode Dual In-Line Package S1WB A □/60B •外観図 OUTLINE Unit : mm Weight : 0.46g （typ.） Package：1W 10.5 ④ 800V 1A ① 品名略号 Type No. ①＋ ③~ ②∼ S1WB 2076 特長 • 小型 DIP パッケージ
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25unless
1mst10msTj
s1wb
diode 2076
60Tstg
604-3
S1WBA60B
S1WB 60 25
S1WB(A)60B
6043
s1wba20
50/SEMIKRON s1wb
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MA47221
Abstract: ma47222 MA47200 MA47220
Text: yflftçQH _ MA47200 Series Stripline PIN Diode Switch Modules Features • BROADBAND 50 OHM DESIGNS THROUGH X BAND ■ CIRCUIT CHARACTERIZED ■ HIGH POWER CAPABILITY ■ VOLTAGE RATINGS TO 1000 VOLTS
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OCR Scan
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MA47200
MA47221
ma47222
MA47220
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