Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0605A SVC710 Varactor Diode http://onsemi.com Single Varactor Diode for VCO 15V, 20nA, CR=4.8, rs=1.6Ω, MCPH3 Features • • • High capacitance ratio Low voltage drive Small-sized package : MCPH Specifications Absolute Maximum Ratings at Ta=25°C
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ENA0605A
SVC710
019A-ere
A0605-6/6
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dab radio circuit
Abstract: construction of varactor diode dab radio varactor diode capacitance measurement Dual Varactor Diode with Common Cathode FSD271TA varactor diode pcb design varactor diode notes varactor diode q factor measurement top marking c2 sot23
Text: ZDC834A SILICON DUAL VARIABLE CAPACITANCE DIODE SUMMARY VBR=25V; IR=20nA; Cd=47pF Nom DESCRIPTION The ZDC834A is a new hyperabrupt SOT23 packaged dual common cathode varactor diode , offering users both compact circuit design and impressive performance comprising tightly controlled CV characteristics, a capacitance
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ZDC834A
ZDC834A
FEATUR631)
dab radio circuit
construction of varactor diode
dab radio
varactor diode capacitance measurement
Dual Varactor Diode with Common Cathode
FSD271TA
varactor diode pcb design
varactor diode notes
varactor diode q factor measurement
top marking c2 sot23
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Dual Varactor Diode with Common Cathode
Abstract: construction of varactor diode dab radio circuit FSD270 FSD270TA dab radio Zetex AN9
Text: FSD270 SILICON DUAL VARIABLE CAPACITANCE DIODE SUMMARY VBR=25V; IR=20nA; Cd=33pF Nom DESCRIPTION The FSD270 is a new hyperabrupt SOT23 packaged dual common cathode varactor diode , offering users both compact circuit design and impressive performance comprising tightly controlled CV characteristics, a capacitance of typically 33 pf @
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FSD270
FSD270
Dual Varactor Diode with Common Cathode
construction of varactor diode
dab radio circuit
FSD270TA
dab radio
Zetex AN9
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KDV365F
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV365F TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES CATHODE MARK Good C-V Linearity. Low Series Resistance. C 1 D 2 Small Package : TFSC. B A MAXIMUM RATING Ta=25 CHARACTERISTIC RATING
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KDV365F
100MHz
200pF,
KDV365F
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Untitled
Abstract: No abstract text available
Text: 05165 ET720 Only One Name Means ProTek’Tion ultra low capacitance steering diode array Description The ET720 is a low capacitance and low leakage steering diode array capable of protecting up to 14 high speed data lines. Its ultra low capacitance allows maintenance of signal integrity for high-speed data lines while protecting the
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ET720
ET720
SO-16
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et720
Abstract: No abstract text available
Text: 05165 ET720 Only One Name Means ProTek’Tion ultra low capacitance steering diode array Description The ET720 is a low capacitance and low leakage steering diode array capable of protecting up to 14 high speed data lines. Its ultra low capacitance allows maintenance of signal integrity for high-speed data lines while protecting the
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ET720
ET720
SO-16
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SO16 weight
Abstract: ET720
Text: 05165 ET720 . . . engineered solutions for the transient environment ULTRA LOW CAPACITANCE STEERING DIODE ARRAY APPLICATIONS ✔ Ethernet - 10/100/1000 Base T ✔ Cellular Phones ✔ Handheld Electronics ✔ FireWire ✔ USB Interface IEC COMPATIBILITY EN61000-4
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ET720
EN61000-4)
5/50ns
SO-16
81-1-A
SO16 weight
ET720
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SO16 weight
Abstract: ET720
Text: 05165 ET720 . . . engineered solutions for the transient environment ULTRA LOW CAPACITANCE STEERING DIODE ARRAY APPLICATIONS ✔ Ethernet - 10/100/1000 Base T ✔ Cellular Phones ✔ Handheld Electronics ✔ FireWire ✔ USB Interface IEC COMPATIBILITY EN61000-4
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ET720
EN61000-4)
5/50ns
SO-16
SO16 weight
ET720
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Infineon technology roadmap
Abstract: ESD5V3S1U-02LS Mini DisplayPort connector ESD5V3S1B-02LRH ESD5V3S1U-02LRH ESD5V3U1U-02LS ESD8V0L1B-02LRH ESD8V0L2B-03L ESD8V0R1B-02LRH ESD8V0R1B-02LS
Text: Since the introduction of the world’s smallest TVS diode Typical applications protected by INFINEON TVS dio- back in 2007, INFINEON has greatly enlarged its portfolio des include see also Table 1 : of small and thin TVS diodes. Today INFINEON continues
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Hitachi DSA001653
Abstract: No abstract text available
Text: HSR101 Silicon Schottky Barrier Diode for Various detector, High speed switching ADE-208-080D Z Rev. 4 Sept. 1, 1998 Features • Low forward voltage, High efficiency. • Low reverse current . • Small Resin Package (SRP) is suitable for surface mount design.
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HSR101
ADE-208-080D
Hitachi DSA001653
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Untitled
Abstract: No abstract text available
Text: HVD362 Variable Capacitance Diode for VCO REJ03G0056-0200 Rev.2.00 Jan 24, 2006 Features • High capacitance ratio. n = 3.0 min • Good C-V linearity. • Super small Flat Lead Package (SFP) is suitable for surface mount design. Ordering Information Type No.
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HVD362
REJ03G0056-0200
HVD362
PUSF002ZB-A
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Untitled
Abstract: No abstract text available
Text: HVD362 Variable Capacitance Diode for VCO REJ03G0056-0200 Rev.2.00 Jan 24, 2006 Features • High capacitance ratio. n = 3.0 min • Good C-V linearity. • Super small Flat Lead Package (SFP) is suitable for surface mount design. Ordering Information Type No.
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HVD362
REJ03G0056-0200
PUSF002ZB-A
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Hitachi DSA002789
Abstract: No abstract text available
Text: HVC365 Variable Capacitance Diode for VCXO ADE-208-428A Z Rev. 1 Features • High capacitance ratio and good C-V linearity. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HVC365
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HVC365
ADE-208-428A
HVC365
100MHz
200pF,
SC-79
Hitachi DSA002789
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Hitachi DSA001652
Abstract: No abstract text available
Text: HVU362 Variable Capacitance Diode for VCXO ADE-208-348A Z Rev. 1 Features • High capacitance ratio. (n = 3.0min) • Good C-V linearity. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. Laser Mark
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HVU362
ADE-208-348A
100MHz
Hitachi DSA001652
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germanium
Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014
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I815/KTN
10I5/KTP
1923/KTN
380TM/KTN
germanium
kia 7208
KIA 7313
germanium transistor
speaker protector
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Untitled
Abstract: No abstract text available
Text: TLP591B GaAÄ As IRED a PHOTO-DIODE ARRAY TENTATIVE DA T A TELECOMMUNICATION PROGRAMMABLE CONTROLLERS MOS GATE DRIVER MOS FET GATE DRIVER The T O S H I B A TLP591B consists of an a l u m i n u m galium ar s e n i d e infrared emitting diode o p t i c a l l y coupled to
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TLP591B
TLP591B
1000pF
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Untitled
Abstract: No abstract text available
Text: Micropower Voltage Reference Diode « llrtrfir v u IW IV CORPORATION \J CLM185-2.5/CLM285-2.5/CLM385-2.5 FEATURES ORDERING INFORMATION • Operating C urrent. 20mA - 20mA • Dynamic Impedance. 1fi
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CLM185-2
5/CLM285-2
5/CLM385-2
CLM185T2
CLM285T2
CLM285Y2
CLM385T2
CLM385N2
CLM385Y2
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Untitled
Abstract: No abstract text available
Text: HSR101-Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Features Outline • Low forward voltage, High efficiency. • Low reverse current. • Sm all Resin package SRP is suitable for surface mount design.
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HSR101
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H0A1876
Abstract: No abstract text available
Text: H0A1876 Transmissive Sensor DESCRIPTION The HOA1876 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1876-001, -002 or photodarlington (HOA1876-003) encased in a white thermoplastic housing. Detector switching takes place whenever an
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H0A1876
HOA1876
HOA1876-001,
HOA1876-003)
SE1450,
SD1440,
SD1410.
H0A1876
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Untitled
Abstract: No abstract text available
Text: HVU362 Variable Capacitance Diode for VCXO HITACHI Features • High capacitance ratio, n = 3.0min • Good C-V linearity. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HVU362
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HVU362
ADE-208-348A
100MHz
200pF,
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CLM185T2
Abstract: CLM285T2 CLM285Y2 CLM385N2 CLM385T2 CLM385Y2 120PV
Text: Micropower Voltage Reference Diode C Q IO Q IC CO RPO RATIO N v CLM185-2.5 / CLM285-2.5/ CLM385-2.5 FEATURES ORDERING INFORMATION • Operating C u rre n t. 20 |M - 20mA • Dynamic Im p ed an ce . 1Q
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CLM185-2
CLM285-2
CLM385-2
CLM185
20yiA
CLM185T2
CLM285T2
CLM285d.
4432E
CLM285Y2
CLM385N2
CLM385T2
CLM385Y2
120PV
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Untitled
Abstract: No abstract text available
Text: HVU362-Variable Capacitance Diode for VCXO Features Outline • High capacitance ratio. n=3.0min • Good C-V linearity. • Ultra small Resin Package (URP) is suitable for surface mount design. Cathode mark 1 Mark ^ - J Ordering Information Type No.
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HVU362-----------Variable
HVU362
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Untitled
Abstract: No abstract text available
Text: HVU359 Variable Capacitance Diode for VCXO HITACHI Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Resin Package URP is suitable for surface mount design. Ordering Information Type No. Laser Mark
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HVU359
ADE-208-023C
100MHz
200pF,
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Mark V6
Abstract: mark h2 diode
Text: HVU365-Variable Capacitance Diode for VCXO Features Outline • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Resin ¿Package URP is suitable for surface mount design. Cathode mark Mark — H2 Ordering Information
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HVU365-----------Variable
HVU365
100MHz
Mark V6
mark h2 diode
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