Untitled
Abstract: No abstract text available
Text: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.
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1N5408
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TSHG5510
Abstract: No abstract text available
Text: TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • 21061 DESCRIPTION TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and
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TSHG5510
TSHG5510
18-Jul-08
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TSFF5510
Abstract: No abstract text available
Text: TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • 21061 DESCRIPTION TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and
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TSFF5510
TSFF5510
18-Jul-08
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UM9441 UM9442
Abstract: UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
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MPD-101A
UM9441 UM9442
UMM5050
NKT 0039
HUM4020
NTE Semiconductor Technical Guide and Cross Refer
wireless mobile charging through microwaves
MSC 9415
hf power combiner broadband transformers
mpd101
Structure rotary phase shifter
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UM9442
Abstract: UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
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MPD-101A
UM9442
UMM5050
MSC 9415
pin diodes radiation detector
MSC 501 302 diode
PIN DIODE DRIVER CIRCUITS
"Microwave Diode"
UM9441
Microwave PIN diode
hf power combiner broadband transformers
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Untitled
Abstract: No abstract text available
Text: LDX-2106-640 • High Power CW Operation- 125 milliwatts • Highly Visible to the Eye. • Wavelength 640 ±5 nm Standard The LDX-2106-640 laser diode is a high power, multimode, visible red laser diode. These AlGaInP broad-area, gain-guided lasers are produced using MOCVD growth which offers high efficiency, low
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LDX-2106-640
LDX-2106-640
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TSFF5510
Abstract: No abstract text available
Text: TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and high speed, molded in a clear, untinted, plastic package.
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TSFF5510
TSFF5510
2002/95/EC
2002/96/EC
08-Apr-05
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KPA-2106QBC-C
Abstract: No abstract text available
Text: 2.1x0.6mm RIGHT ANGLE SURFACE LED PRELIMINARY SPEC KPA-2106QBC-C Features Description !2.1mmx0.6mm SMT LED, 1.0mm THICKNESS. The Blue source color devices are made with !LOW POWER CONSUMPTION. GaN on Sapphire Light Emitting Diode. BLUE !WIDE VIEWING ANGLE.
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KPA-2106QBC-C
2000PCS
DSAB7855
DEC/18/2002
KPA-2106QBC-C
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Untitled
Abstract: No abstract text available
Text: 2.1x0.6mm RIGHT ANGLE SURFACE LED LAMP KPA-2106YC Description Features z2.1mmX0.6mm RIGHT ANGLE SMT LED, 1.0mm zIDEAL VIEW ING ANGLE. FOR BACKLIGHT AND INDICATOR. zVARIOUS COLORS AND LENS TYPES AVAILABLE. zPACKAGE: zRoHS Yellow Light Emitting Diode. POWER CONSUMPTION.
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KPA-2106YC
2000PCS
DSAA5673
MAR/18/2005
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Untitled
Abstract: No abstract text available
Text: 2.1x0.6mm RIGHT ANGLE SURFACE LED LAMP Part Number: KPA-2106CGCK Features Green Description 2.1mmX0.6mm right angle SMT LED, 1.0mm thickness. The Green source color devices are made with AlGaInP on Low power consumption. GaAs substrate Light Emitting Diode.
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KPA-2106CGCK
2000pcs
si/2010
DSAC0136
SEP/18/2010
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KPA-2106MGC
Abstract: No abstract text available
Text: 2.1x0.6mm RIGHT ANGLE SURFACE LED KPA-2106MGC Description Features ! 2.1mmx0.6mm ! LOW SMT LED, 1.0mm THICKNESS. POWER CONSUMPTION. ! WIDE ! IDEAL MEGA GREEN The Mega Green source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.
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KPA-2106MGC
2000PCS
DSAB0456
DEC/17/2002
KPA-2106MGC
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KPA-2106SEC
Abstract: No abstract text available
Text: 2.1x0.6mm RIGHT ANGLE SURFACE LED LAMP Part Number: KPA-2106SEC Super Bright Orange Features Description z 2.1mmX0.6mm RIGHT ANGLE SMT LED, 1.0mm The Super Bright Orange device is made with InGaAlP THICKNESS. on GaAs substrate light emitting diode chip.
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KPA-2106SEC
2000PCS
DSAA4543
JUL/04/2007
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KPA-2106SEC
Abstract: No abstract text available
Text: 2.1x0.6mm RIGHT ANGLE SURFACE LED LAMP KPA-2106SEC Features z2.1mmX0.6mm Description RIGHT ANGLE SMT LED, 1.0mm THICKNESS. zLOW The Super Bright Orange device is made with DH InGaAlP on GaAs substrate light emitting diode chip. POWER CONSUMPTION. zW IDE
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KPA-2106SEC
2000PCS
DSAA4543
MAR/18/2005
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Untitled
Abstract: No abstract text available
Text: 2.1x0.6mm SMD CHIP LED LAMP KPA-2106SEWK SUPER BRIGHT ORANGE Features Description !2.1mmx0.6mm SMT LED, 1.0mm THICKNESS. The Super Bright Orange source color devices are !LOW POWER CONSUMPTION. made with DH InGaAlP on GaAs substrate Light !WIDE Emitting Diode.
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KPA-2106SEWK
2000PCS
KDA0613
SEP/29/2001
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KPA-2106SURCK
Abstract: No abstract text available
Text: 2.1x0.6mm RIGHT ANGLE SURFACE LED LAMP KPA-2106SURCK Features O2.1mmX0.6mm RIGHT ANGLE SMT LED, 1.0mm THICKNESS. OLOW POWER CONSUMPTION. HYPER RED Description The Hyper Red source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.
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KPA-2106SURCK
2000PCS
DSAA5607
MAR/18/2005
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KPA-2106SYCK
Abstract: No abstract text available
Text: 2.1x0.6mm RIGHT ANGLE SURFACE LED LAMP Part Number: KPA-2106SYCK Super Bright Yellow Features Description z 2.1mmX0.6mm RIGHT ANGLE SMT LED, 1.0mm The Super Bright Yellow device is made with InGaAlP THICKNESS. on GaAs substrate light emitting diode chip.
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KPA-2106SYCK
2000PCS
DSAA5608
JUL/04/2007
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KPA-2106SECK
Abstract: No abstract text available
Text: 2.1x0.6mm RIGHT ANGLE SURFACE LED LAMP Part Number: KPA-2106SECK Super Bright Orange Features Description z 2.1mmX0.6mm RIGHT ANGLE SMT LED, 1.0mm The Super Bright Orange device is made with InGaAlP THICKNESS. on GaAs substrate light emitting diode chip.
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KPA-2106SECK
2000PCS
DSAA4770
JUL/04/2007
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KPA-2106SRW-PRV
Abstract: No abstract text available
Text: 2.1x0.6mm SMD CHIP LED LAMP KPA-2106SRW- PRV SUPER BRIGHT RED Features Description !2.1mmx0.6mm SMT LED, 1.0mm THICKNESS. The Super Bright Red source color devices are !LOW POWER CONSUMPTION. made with Gallium Aluminum Arsenide Red Light !WIDE Emitting Diode.
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2000PCS
KDA0612
SEP/29/2001
KPA-2106SRW-PRV
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KPA-2106CGCK
Abstract: No abstract text available
Text: 2.1x0.6mm RIGHT ANGLE SURFACE LED LAMP Part Number: KPA-2106CGCK Green Features Description z 2.1mmX0.6mm RIGHT ANGLE SMT LED, 1.0mm The Green source color devices are made with InGaAlP on THICKNESS. GaAs substrate Light Emitting Diode. z LOW POWER CONSUMPTION.
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KPA-2106CGCK
2000PCS
DSAC0136
JUL/03/2007
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Untitled
Abstract: No abstract text available
Text: 2.1x0.6mm SMD CHIP LED LAMP KPA-2106QGW GREEN Features Description !2.1mmx0.6mm SMT LED, 1.0mm THICKNESS. The Green source color devices are made with !LOW POWER CONSUMPTION. Gallium Phosphide Green Light Emitting Diode. !WIDE VIEWING ANGLE. !IDEAL FOR BACKLIGHT AND INDICATOR.
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KPA-2106QGW
2000PCS
KDA0611
SEP/29/2001
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KPA-2106SYC
Abstract: No abstract text available
Text: 2.1x0.6mm SMD CHIP LED LAMP KPA-2106SYC SUPER BRIGHT YELLOW Features Description !2.1mmx0.6mm SMT LED, 1.0mm THICKNESS. The Super Bright Yellow source color devices are !LOW made with DH InGaAlP on GaAs substrate Light POWER CONSUMPTION. ! WIDE ! IDEAL Emitting Diode.
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KPA-2106SYC
2000PCS
DSAD0232
JAN/26/2003
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KPA-2106YC
Abstract: No abstract text available
Text: 2.1x0.6mm SMD CHIP LED LAMP KPA-2106YC YELLOW Features Description !2.1mmx0.6mm SMT LED, 1.0mm THICKNESS. The Yellow source color devices are made with !LOW Gallium Arsenide Phosphide on Gallium Phosphide POWER CONSUMPTION. ! WIDE ! IDEAL VIEWING ANGLE. Yellow Light Emitting Diode.
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2000PCS
DSAA5673
JAN/26/2003
KPA-2106YC
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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