Hitachi DSA0087
Abstract: HL6722G
Text: HL6722G AlGaInP Laser Diode ADE-208-220C Z 4th Edition Dec. 2000 Description The HL6722G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for bercode scanner, and various other types of optical equipment.
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HL6722G
ADE-208-220C
HL6722G
HL6722G:
Hitachi DSA0087
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HL6722G
Abstract: ITH20 Hitachi DSA0047
Text: HL6722G AlGaInP Laser Diode ADE-208-220C Z 4th Edition Dec. 2000 Description The HL6722G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for bercode scanner, and various other types of optical equipment.
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HL6722G
ADE-208-220C
HL6722G
HL6722G:
ITH20
Hitachi DSA0047
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BU506D
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification BU506D Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・High voltage ・Fast switching speed ・With integrated efficiency diode APPLICATIONS ・Horizontal deflection circuits of colour TV receivers.
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BU506D
O-220C
BU506D
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BUL381D
Abstract: TP30S
Text: Product Specification www.jmnic.com BUL381D Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage capability ・Very high switching speed ・Integrated antiparallel collector-emitter diode APPLICATIONS ・Designed for use in lighting
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BUL381D
O-220C
BUL381D
TP30S
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BUL381D
Abstract: 2a DIODE
Text: SavantIC Semiconductor Product Specification BUL381D Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost
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BUL381D
O-220C
BUL381D
2a DIODE
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BUL381D
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification BUL381D Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed ・Integrated antiparallel collector-emitter diode APPLICATIONS ・Designed for use in lighting applications and low cost
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BUL381D
O-220C
BUL381D
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BU406D
Abstract: BU407D BU-406D 400v high speed diode
Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU406D BU407D DESCRIPTION •With TO-220C package ·High voltage ·Fast switching speed ·Low saturation voltage ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection output
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BU406D
BU407D
O-220C
BU406D
BU407D
BU-406D
400v high speed diode
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BUL128D
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification BUL128D Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost
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BUL128D
O-220C
BUL128D
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PK P6KE 200A
Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Text: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop
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EC111
EC2111v1E0804
PK P6KE 200A
SLD30-018
436 6V8A
1.5KA36CA
N10H
kt 201-500
P6KA36CA
P6KA 335
Diode N10Z
P6KA18CA
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BU506D
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BU506D Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ·Fast switching speed ·Built-in damper diode APPLICATIONS ·Horizontal deflection circuits of colour TV receivers. ·Line-operated switch-mode applications.
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BU506D
O-220C
BU506D
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H5N2512CF
Abstract: H5N3007CF Diode BAY 32
Text: H5N2512CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0481-0100 Rev.1.00 Nov.26.2004 Features • • • • Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode Outline TO-220CFM D 1. Gate 2. Drain 3. Source
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H5N2512CF
REJ03G0481-0100
O-220CFM
Unit2607
H5N2512CF
H5N3007CF
Diode BAY 32
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H5N3007CF
Abstract: No abstract text available
Text: H5N3007CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0473-0100 Rev.1.00 Nov.11.2004 Features • • • • Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode Outline TO-220CFM D 1. Gate 2. Drain 3. Source
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H5N3007CF
REJ03G0473-0100
O-220CFM
Unit2607
H5N3007CF
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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LA440
Abstract: LE7602-LA180C LE7602-LAC LA220C 180C 210C LE7602-L LE7602-LA LE7602-LA260C
Text: Technical Data Rev. 1.0, May 2001 LE7602-LAC, LE7602-LAxxxC Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 10 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated laser modulator (ILM)
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LE7602-LAC,
LE7602-LAxxxC
LE7602-LAC
FOD-DS-00073
LA440
LE7602-LA180C
LA220C
180C
210C
LE7602-L
LE7602-LA
LE7602-LA260C
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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MBRB1045
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
mur1650
T4 SOD-123 1N4004
MR2510
1N2069
SES5001
mur420 equivalent
CT PR1504
equivalent for fr302 diode
mur 460 switch
diode A14A surface mount
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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MBRP60035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
FE16B
mbr3045pt transistor
FR102 SOD-123
1N4007 sod-123
BYV43-45
BYV19-45
MUR1660CT equivalent
MUR460 BL
FEP16DT 0032
mur420 equivalent
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PK MUR 460
Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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MBR340
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
PK MUR 460
pk mur460
PK MUR460 1110
gi756 diode
carrier 30bq015
USD1120
0525 Transient Voltage Suppressors
diode A14A surface
SS14 SOD123
MBRD360
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045PT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MR2835S equivalent
A14F diode
1n5404 diode
FE16A
MUR860 equivalent
MUR1620CT
MUR420 diode
usd745c equivalent
MBRD360
PR1502
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equivalent components of diode 1N5399
Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045WT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
equivalent components of diode 1N5399
diode ses5001
6A10 BL diode
equivalent for fr302 diode
equivalent components of diode her104
fe8b diode
FE8D
gi756 diode
A14F diode
MUR420 diode
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smd diode f54
Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040
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10MQ040
10MQ060
10MQ090
15MQ040
10BQ015
10BQ040
10BQ060
10BQ100
30BQ015
30BQ040
smd diode f54
18t0045
smd f54
209DMQ
20F0040
209DMQ150
50W005F
15CT0035
smd diode K10
209CMQ150
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Untitled
Abstract: No abstract text available
Text: Æ 7 SGS-THOMSON *7 £ liMD l^i[L[l@M RD[l 8 BYT 12-200-^400 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING SUITABLE APPLICATIONS: ■ FREE WHEELING DIODE IN CONVERTERS AND MOTOR CONTROL CIRCUITS
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byt12
Abstract: No abstract text available
Text: rz7 SCS-THOMSON B Y T 1 2 -2 0 0 -> 4 0 0 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SW ITCHING LOSSES ■ LOW NOISE TURN-O FF SW ITCHING SUITABLE APPLICATIONS : ■ FREE W HEELING DIODE IN CONVERTERS AND M OTO R CO NTROL CIRCUITS
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handling of beam lead diodes
Abstract: No abstract text available
Text: fZSI HEWLETT k"KM PACKARD Beam Lead PIN Diode Technical Data HPND-4005 Features • High Breakdown Voltage 120 V Typical - G O LD L E A P S - v , /,*, 8 02 81 1 P CATHODE a s s iv a t io n • Low Capacitance 0.017 pF Typical • Low Resistance 4.7 Q Typical
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HPND-4005
HPND-4005
handling of beam lead diodes
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Untitled
Abstract: No abstract text available
Text: 2SJ471 Silicon P Channel D V -L MOS FET High Speed Power Switching HITACHI ADE-208-540 1st. Edition Features • Low on-resistance • 4V gate drive devices. • High speed switching R d s «*. = 25 m il typ. Outline T O -220C F M f G c 1's I OS 500 1. Gate
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2SJ471
ADE-208-540
-220C
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