Untitled
Abstract: No abstract text available
Text: VS-VSK.230.PbF Series www.vishay.com Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 230 A FEATURES • • • • • • • • • • MAGN-A-PAK High voltage Electrically isolated base plate 3500 VRMS isolating voltage Industrial standard package
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E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-VSK.230.PbF Series www.vishay.com Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 230 A FEATURES • • • • • • • • • • MAGN-A-PAK High voltage Electrically isolated base plate 3500 VRMS isolating voltage Industrial standard package
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PDF
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E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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ID100
Abstract: MSAFX24N50A
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX24N50A Features • • • • • • • 500 Volts 24 Amps 230 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX24N50A
Voltag250
ID100
MSAFX24N50A
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Untitled
Abstract: No abstract text available
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX24N50A Features • • • • • • • 500 Volts 24 Amps 230 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX24N50A
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ID100
Abstract: MSAFX24N50A Diode Ds 135. 12A
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX24N50A Features • • • • • • • 500 Volts 24 Amps 230 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX24N50A
ID100
MSAFX24N50A
Diode Ds 135. 12A
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RUTTONSHA all diodes
Abstract: RUTTONSHA 16 F M 120 VGT350
Text: Ruttonsha International Rectifier Ltd. POWER MODULES RUTTONSHA IRK.170, .230, .250 SERIES High Voltage Thyristor/Diode and Thyristor/Thyristor FEATURES L L L L L L L Electrically isolated base plate. 3000 V RMS isolating voltage. Industrial standard package.
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10ohms;
20ohms
RUTTONSHA all diodes
RUTTONSHA 16 F M 120
VGT350
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PIN photodiode 850nm
Abstract: MID-54419 IR 850nm
Text: T-1 3/4 PACKAGE PIN PHOTODIODE Description MID-54419 Package Dimensions The MID-54419 is a photo diode mounted in water clear Unit: mm inches end look plastic package and suitable for the variety ψ5.05 (.200 wavelength. 5.47 (.215) 7.62 (.300) 5.90 (.230)
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MID-54419
MID-54419
40MIN.
50TYP.
00MIN.
PIN photodiode 850nm
IR 850nm
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Untitled
Abstract: No abstract text available
Text: UM10476 SSL21101T LED driver demo board Rev. 1 — 17 August 2012 User manual Document information Info Content Keywords LED driver, SMPS SSL21101T, flyback, demo board, SSL21101T 8 W, flyback LTHD230 reference design board 12NC: 9352 953 92598; SSL21101DB01 ,
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UM10476
SSL21101T
SSL21101T,
LTHD230
SSL21101DB01)
LR120
SSL21101DB02)
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diode 624
Abstract: PXZ35 9416A 8566530000 PXS35
Text: PLUGSERIES marking field Accessories retaining clip 87 PXZ35 95 (PXS35) cross-connection channel 11 / 21 cross-connection channel A1 / A2 92 Screw clamp Tension clamp Component housing for mounting rail TS 35 Screw clamp version Tension clamp version 22
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PXZ35)
PXS35)
PXS35
PXZ35
nF/200
diode 624
9416A
8566530000
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aeg vde 0435
Abstract: oki relay aeg thyristors aeg diode Si 61 L 240V AC/48v output rectifiers circuit diagrams
Text: CONTA-ELECTRONICS ELECTRONICS CONTA-ELECTRONICS CONTA-ELECTRONICS Program Overview 3 4 5 6 10 14 16 22 23 25 27 30 32 34 35 38 39 40 44 46 48 50 52 54 56 58 66 67 68 70 76 90 91 92 94 95 96 98 100 102 104 106 110 112 113 Fuse, Component, Diode and Indicator Modules
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CMS-UI60-UI
D-33161HÃ
aeg vde 0435
oki relay
aeg thyristors
aeg diode Si 61 L
240V AC/48v output rectifiers circuit diagrams
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ID100
Abstract: MSAEZ33N20A MSAFZ33N20A
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEZ33N20A MSAFZ33N20A Features • • • • • • • 200 Volts 33 Amps 70 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure
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MSAEZ33N20A
MSAFZ33N20A
ID100
MSAEZ33N20A
MSAFZ33N20A
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Untitled
Abstract: No abstract text available
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEZ33N20A MSAFZ33N20A Features • • • • • • • 200 Volts 33 Amps 70 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure
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MSAEZ33N20A
MSAFZ33N20A
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DIODE T5
Abstract: H8N80 Z3 DIODE LM2575T diode T-77 H3 diode LM2575HVT-12 LM2575HVT-ADJ LM2575N-ADJ LM2575T-12
Text: N a t i o n a l Semiconductor Voltage References, Temperature Sensors, Converters and Switching Circuits Voltage References Mfr.Õs Type Metal Can SOIC TO-92 LM113H LM136AH-2.5 LM136H-2.5 LM236AH-5.0 LM236H-2.5 Ñ Ñ Ñ LM313H Ñ Ñ Ñ Ñ Ñ Ñ Ñ Ñ Ñ Ñ
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LM113H
LM136AH-2
LM136H-2
LM236AH-5
LM236H-2
LM285BXZ-2
LM285B,
LM3524DM
LMC7660IN
LF398H
DIODE T5
H8N80
Z3 DIODE
LM2575T
diode T-77
H3 diode
LM2575HVT-12
LM2575HVT-ADJ
LM2575N-ADJ
LM2575T-12
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1N4007 diode PIV rating
Abstract: 0.5w led driver circuit SBC1-102-211 SBC1-102 211 LNK302P LinkSwitch-TN LNK302 DER-92 SBC1-102 EN55022B
Text: Design Example Report Title 0.5W Non-Isolated Buck-Boost Converter using the LNK302P Specification Input: 85-265 VAC Output: 0.5W, 40mA Constant current Application LED Driver Author Power Integrations Applications Department Document Number DER-92 Date August 11, 2005
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LNK302P
DER-92
EN55022
for-689
1N4007 diode PIV rating
0.5w led driver circuit
SBC1-102-211
SBC1-102 211
LNK302P
LinkSwitch-TN
LNK302
DER-92
SBC1-102
EN55022B
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Diode FAJ 45
Abstract: Diode FAJ package
Text: 1 * GaAs INFRARED EMITTING DIODE IFTIELECTlllltS CQX14, CQX16 The CQX14/16 are 940nm LHDs in narrow angle, TQ-46 packages. SÊAHNÛ ST1332 N Good optica! to mechanical alignment SYMBOL INCHES MiN ' MAX. A 0b «>0 «•0, e * h i k L « .01« 209 255 .021 .230
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CQX14,
CQX16
CQX14/16
940nm
TQ-46
ST1332
70mWA
Diode FAJ 45
Diode FAJ package
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Untitled
Abstract: No abstract text available
Text: S^E 405 5 4 5 2 GG13373 SOM » International S R ectifier I INR SERIES IRK.170, .230, .250 SCR I SCR and SCR / DIODE NEW MAGN-A-pak Power Modules INTERNATIONAL R E CT IF IE R Features • High voltage. ■ Electrically isolated base plate ■ 3 000 V RMS isolating voltage
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GG13373
34-Thermal
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irkv 300
Abstract: d337 diode current source inverter D345 irkt 350 IRKH 180 base triggering circuit of 3 phase inverters
Text: S IE 4Ô5SMS2 D 0Ü13373 International S Rectifier I INR SERIES IRK.170, .230, .250 SCR / SCR and SCR / DIODE INTERNATIONAL 504 NEW MAGN-A-pak Power Modules R EC TIFIER Features • ■ ■ ■ ■ ■ ■ ■ ■ High v o lta g e . E le c tric a lly is o la te d ba se p la te
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5S452
0D133Ã
10ohm:
20ahms;
34-Thermal
irkv 300
d337 diode
current source inverter
D345
irkt 350
IRKH 180
base triggering circuit of 3 phase inverters
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D345
Abstract: No abstract text available
Text: International H Rectifier s e r ie s 1RK.170, .230, .250 SCR / SCR and SCR / DIODE NEW MAGN-A-pak Power Modules 170A 230A 250A Features • High v o lta g e . ■ E le c tric a lly is o la te d b a se p la te ■ 3 000 V RMS is o la tin g v o lta g e ■ In d u s tria l s ta n d a rd p a cka g e
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diode a7
Abstract: A7 DIODE ME3012A7 TJ3 diode bridge me3006a7 ME3012 powerex ME30
Text: POWEREX INC 15E D • TETHbBl 00033^1 G ■ fCMEREX M E30 Powerex, Inc., M ills Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003LeMans, France (43) 72.75.15 7 A7 Three-Phase Diode Bridge Module 75 Amperes/600-1600 Volts
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BP107,
72003LeMans,
Amperes/600-1600
i4b21
0G33c
BP107
diode a7
A7 DIODE
ME3012A7
TJ3 diode bridge
me3006a7
ME3012
powerex ME30
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Untitled
Abstract: No abstract text available
Text: Micnosemi H m m Santa Ana, CA m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Pow ered b y Technology MSAEZ33N20A MSAFZ33N20A Features 200 Volts Ultrafast rectifier in parallel with the body diode (M SAE type only)
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MSAEZ33N20A
MSAFZ33N20A
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Untitled
Abstract: No abstract text available
Text: Microsemi m m m Santa Ana, CA m 2830 S. F a irvie w St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology MSAEZ33N20A MSAFZ33N20A Features 200 Volts 33 Amps Ultrafast rectifier in parallel with the body diode (M SAE type only)
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MSAEZ33N20A
MSAFZ33N20A
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KE524503
Abstract: ke92 ke721k03 KEF24503HB KE721K03HB KED245A1 KE524510HB KE72 ked2 kee2
Text: P O U E R E X INC BSE J> • 72^51 DGG37MT b « P R X T-33-3r mmtnex_ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14
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DGG37MT
T-33-3r
BP107,
KE524503
ke92
ke721k03
KEF24503HB
KE721K03HB
KED245A1
KE524510HB
KE72
ked2
kee2
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powerex gate turn-off gto
Abstract: BP107 FGR3000AV-90 marking fgw
Text: mumme 7 S T4 bP l OOObQbfi 4Ü1 * P R X bME D FGR3000AV POWEREX INC Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France(43) 72.75.15 Reverse Conducting Gate-Turn-Off Thyristors
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7STHfci21
FGR3000AV
BP107,
powerex gate turn-off gto
BP107
FGR3000AV-90
marking fgw
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BP107
Abstract: FGR3000AH-40 FGR3000AH-50 powerex gate turn-off gto
Text: b4E D mumnex TETMbEl GODbObS 7T2 « P R X FGR3000AH POUIEREX INC Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, Fnnce(43) 72.75.15 Reverse Conducting Gate-Turn-Off Thyristors
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FGR3000AH
BP107,
L-40A,
BP107
FGR3000AH-40
FGR3000AH-50
powerex gate turn-off gto
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