SML10SUZ12SC
Abstract: No abstract text available
Text: SML10SUZ12SC Ultrafast Recovery Diode 1200 Volt, 2 X 10 Amp Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery SML 10SUZ12SC 1 - Anode 1 2 - Com. Cathode 1 3 - Anode 2 diode features a triple charge control action utilising
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SML10SUZ12SC
10SUZ12SC
SML10SUZ12SC
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diode 2458
Abstract: d3pak "ultraFast Recovery Diode" low forward voltage fast diode ultra low forward voltage diode local lifetime diode smps 30w
Text: SML10SUZ12SC MECHANICAL DATA Ultrafast Recovery Diode 1200 Volt, 2 X 10 Amp TECHNOLOGY The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with low emitter efficiency and local lifetime control techniques.
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SML10SUZ12SC
diode 2458
d3pak
"ultraFast Recovery Diode"
low forward voltage fast diode
ultra low forward voltage diode
local lifetime diode
smps 30w
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d749n
Abstract: D1069N D1809N D269N D849N
Text: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]
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D269N
D749N
D1069N
D1809N
D849N
113suant
d749n
D1069N
D1809N
D269N
D849N
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V 2238
Abstract: D1069N D1809N 1756 diode d749n LTR-S D269N D849N
Text: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]
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D269N
D749N
D1069N
D1809N
D849N
V 2238
D1069N
D1809N
1756 diode
d749n
LTR-S
D269N
D849N
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c 3953
Abstract: 6914 D1809N PD 1515 V 2238 D1069N D269N D3301N D749N D849N
Text: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]
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D269N
D749N
D1069N
D1809N
D849N
c 3953
6914
D1809N
PD 1515
V 2238
D1069N
D269N
D3301N
D749N
D849N
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6914
Abstract: 2481 diode 1298 D1069N D1809N D269N D3301N D749N D849N
Text: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]
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D269N
D749N
D1069N
D1809N
D849N
113suant
6914
2481 diode
1298
D1069N
D1809N
D269N
D3301N
D749N
D849N
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BiFET Processes
Abstract: No abstract text available
Text: Low Turn-On Voltage Schottky Diode in InGaP/GaAs HBT/BiFET Processes Cristian Cismaru and Peter J. Zampardi* Skyworks Solutions, Inc., 2427 Hillcrest Drive, Newbury Park, CA 91320 cristian.cismaru@skyworksinc.com, 805.480.4663 *formerly of Skyworks Keywords: Tantalum Nitride, Schottky, HBT, BiFET, GaAs, InGaP.
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KPC357N
Abstract: cosmo 357nt
Text: KPC357NT0W Series 4PIN MINI-FLAT LOW INPUT CURRENT PHOTOCOUPLER cosmo Description Schematic 4 1 The KPC357NT0W is DC-input single channel which contains a light emitting diode optically coupled to a 3 The input-output isolation voltage is rated at 3750 Vrms.
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KPC357NT0W
3750Vrms)
69P04003
KPC357N
cosmo 357nt
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Untitled
Abstract: No abstract text available
Text: KPC357NT0T Series 4PIN MINI-FLAT LOW INPUT CURRENT PHOTOCOUPLER cosmo Description Schematic 4 1 The KPC357NT0T is DC-input single channel which contains a light emitting diode optically coupled to a 3 The input-output Isolation voltage is rated at 3750 Vrms.
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KPC357NT0T
3750Vrms)
69P04002
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Si4622DY
Abstract: No abstract text available
Text: SPICE Device Model Si4622DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFETwith Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4622DY
18-Jul-08
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cosmo 357nt
Abstract: No abstract text available
Text: KPC357NT0Z Series 4PIN MINI-FLAT LOW INPUT CURRENT PHOTOCOUPLER cosmo Schematic Description 4 1 The KPC357NT0Z is DC-input single channel which contains a light emitting diode optically coupled to a 3 2 phototransistor. It is packaged in a 4-pin Mini-Flat package.
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KPC357NT0Z
3750Vrms)
69P04004
cosmo 357nt
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KPC357
Abstract: KPC357NT0B KPC357NT
Text: KPC357NT Series 4PIN MINI-FLAT PHOTOTRANSISTOR PHOTOCOUPLER cosmo Schematic 4 The KPC357 is DC-input single channel which 1 Description contains a light emitting diode optically coupled to a 3 2 phototransistor. It is packaged in a 4-pin Mini-Flat package. The input-output isolation voltage is rated at
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KPC357NT
KPC357
3750vrms)
UL1577,
E169586
600all
69P04001
KPC357NT0B
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Untitled
Abstract: No abstract text available
Text: New Product Si4622DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0160 at VGS = 10 V 0.0186 at VGS = 4.5 V 0.0264 at VGS = 10 V 0.0290 at VGS = 4.5 V
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Si4622DY
2002/95/EC
Si4622DY-T1-E3
Si4622DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si4622DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0160 at VGS = 10 V 0.0186 at VGS = 4.5 V 0.0264 at VGS = 10 V 0.0290 at VGS = 4.5 V
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Si4622DY
2002/95/EC
Si4622DY-T1-E3
Si4622DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si4622DY
Abstract: No abstract text available
Text: New Product Si4622DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0160 at VGS = 10 V 0.0186 at VGS = 4.5 V 0.0264 at VGS = 10 V 0.0290 at VGS = 4.5 V
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Si4622DY
2002/95/EC
18-Jul-08
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si4622
Abstract: SI4622DY
Text: New Product Si4622DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0160 at VGS = 10 V 0.0186 at VGS = 4.5 V 0.0264 at VGS = 10 V 0.0290 at VGS = 4.5 V
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Si4622DY
Si4622DY-T1-E3
18-Jul-08
si4622
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EMC4002
Abstract: No abstract text available
Text: EMC4002 SMBus Fan Driver with Temperature Monitoring PRODUCT FEATURES Description The EMC4002 is a combination fan controller device, temperature sensor, and thermal monitor. It contains two RPM based Fan Control Algorithms that monitor the fan’s speed and automatically adjust the drive to
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EMC4002
EMC4002
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germanium
Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014
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I815/KTN
10I5/KTP
1923/KTN
380TM/KTN
germanium
kia 7208
KIA 7313
germanium transistor
speaker protector
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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hitachi rectifier U05B
Abstract: U05E Diode U05B U05B U05C U05G U05J 1S2455 diode 2458 V180
Text: T TYPE •FEATURES UP TO 800V 4.0A RMS DIODE OUTLINE DRAWING • Optimum to serve as power supply rectifier for general apparatus, especially for large-sized color television sets, video tape recorders and stereo equipments. 1.2 • Employing Hitachi's unique glass encapsulation
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U05Brd
10msec
10msec,
hitachi rectifier U05B
U05E
Diode U05B
U05B
U05C
U05G
U05J
1S2455
diode 2458
V180
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Diode L2N
Abstract: 2MI50F-050 ti2k 1x100
Text: 2MI50F-050 FU JI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET MOS-FET MODULE • Features lOutline Drawings • l ow on-resistance • High current • hsulated to elements and metal base • Separated two-elements • hclude fast recovery diode 2-458 ■ Applications
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2MI50F-050
Diode L2N
2MI50F-050
ti2k
1x100
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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BYX 13 400 R
Abstract: byx 67-1000 esm 107 byx 200 byx 12 800 byx 21 6aio VRRM 800, IFSM 300 esm diodes RM250
Text: Fast recovery Silicon rectifier diode s — trr 5 0 0 ns D io de s de redressement rapides au silic iu m Case Type Boîtier Vrr V m — tr r 5 0 0 ns V f / if (V) (A) T (vjï (°C) ( 0 <A) 'F S M (A) max Tease 100 °C tp 10 ms 25 °C max IR /V ImA) rrm ttrr (11
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