protection diode 445
Abstract: LND1083 LND1084 LND1085
Text: • DATA SHEET LND1083/84/85 7.5 A, 5 A, 3 A Low Dropout Positive Adjustable Regulators GENERAL DESCRIPTION FEATURES The LND1083/LND1084/LND1085 series of positive adjustable regulators are designed to provide 7.5A, 5A and 3A with higher efficiency than currently available devices. All internal
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LND1083/84/85
LND1083/LND1084/LND1085
protection diode 445
LND1083
LND1084
LND1085
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Untitled
Abstract: No abstract text available
Text: 2SK2528-01 N-channel MOS-FET FAP-II Series 900V > Features - 3,6Ω 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2528-01
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Untitled
Abstract: No abstract text available
Text: 2SK2526-01 N-channel MOS-FET FAP-II Series 900V > Features - 3,6Ω 5A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2526-01
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Untitled
Abstract: No abstract text available
Text: 2SK2469-01MR N-channel MOS-FET FAP-II Series 300V > Features - 1Ω 5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2469-01MR
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2SK2272-01R
Abstract: No abstract text available
Text: 2SK2272-01R N-channel MOS-FET FAP-IIA Series 900V > Features - 2,8Ω 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2272-01R
2SK2272-01R
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2SK2526-01
Abstract: No abstract text available
Text: 2SK2526-01 N-channel MOS-FET FAP-II Series 900V > Features - 3,6Ω 5A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2526-01
2SK2526-01
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Untitled
Abstract: No abstract text available
Text: 2SK2527-01MR N-channel MOS-FET FAP-II Series 900V > Features - 3,6Ω 5A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2527-01MR
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MOSFET 300V
Abstract: 2SK2469-01MR
Text: 2SK2469-01MR N-channel MOS-FET FAP-II Series 300V > Features - 1Ω 5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2469-01MR
MOSFET 300V
2SK2469-01MR
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MAX724ECK
Abstract: MAX724CCK MAX724 MAX726ECK MAX726 CDR125 MAX726CCK MBR745 UPL1C221MRH6 dc-dc stepdown converter 12 to 5v 3a
Text: 19-0107; Rev 3; 9/95 5A/2A Step-Down, PWM, Switch-Mode DC-DC Regulators The MAX724/MAX726 are monolithic, bipolar, pulsewidth modulation PWM , switch-mode DC-DC regulators optimized for step-down applications. The MAX724 is rated at 5A, and the MAX726 at 2A. Few
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MAX724/MAX726
MAX724
MAX726
O-220
MAX724ECK
MAX724CCK
MAX726ECK
CDR125
MAX726CCK
MBR745
UPL1C221MRH6
dc-dc stepdown converter 12 to 5v 3a
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2SK2526-01
Abstract: No abstract text available
Text: 2SK2526-01 N-channel MOS-FET FAP-II Series 900V > Features - 3,6Ω 5A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2526-01
2SK2526-01
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2SK2528-01
Abstract: No abstract text available
Text: 2SK2528-01 N-channel MOS-FET FAP-II Series 900V > Features - 3,6Ω 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2528-01
900citances
2SK2528-01
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power Diode 800V 5A
Abstract: 2SK2397-01MR
Text: 2SK2397-01MR N-channel MOS-FET FAP-II Series 800V > Features - 2,3Ω 5A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2397-01MR
power Diode 800V 5A
2SK2397-01MR
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2SK2527-01MR
Abstract: No abstract text available
Text: 2SK2527-01MR N-channel MOS-FET FAP-II Series 900V > Features - 3,6Ω 5A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2527-01MR
2SK2527-01MR
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Untitled
Abstract: No abstract text available
Text: 2SK2272-01R N-channel MOS-FET FAP-IIA Series 900V > Features - 2,8Ω 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2272-01R
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2SK2527-01MR
Abstract: No abstract text available
Text: 2SK2527-01MR N-channel MOS-FET FAP-II Series 900V > Features - 3,6Ω 5A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2527-01MR
2SK2527-01MR
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schematic diagram 3,3V dc voltage regulator lm317
Abstract: schematic diagram 48v dc 3A battery charger 48v regulator by lm317 12v battery charger lm317 automatic schematic diagram 12V to 3V dc voltage regulator LM1084IT-12 LM1084 LM1084 ADJ LM1084-ADJ LM1084IS-ADJ
Text: LM1084 5A Low Dropout Positive Regulators General Description Features The LM1084 is a series of low dropout voltage positive regulators with a maximum dropout of 1.5V at 5A of load current. It has the same pin-out as National Semiconductor’s industry standard LM317.
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LM1084
LM1084
LM317.
O-220
O-263
LM1085
LM1086
schematic diagram 3,3V dc voltage regulator lm317
schematic diagram 48v dc 3A battery charger
48v regulator by lm317
12v battery charger lm317 automatic
schematic diagram 12V to 3V dc voltage regulator
LM1084IT-12
LM1084 ADJ
LM1084-ADJ
LM1084IS-ADJ
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LM1084-ADJ
Abstract: LM1084-12 circuit diagram for 48v 10a automatic battery charger lm1085 application note LM1084IT-3 LM1084 ADJ 48v regulator by lm317 battery charger lead 48v 10A circuit lm317 equivalent LM1084IS-ADJ
Text: LM1084 5A Low Dropout Positive Regulators General Description Features The LM1084 is a series of low dropout voltage positive regulators with a maximum dropout of 1.5V at 5A of load current. It has the same pin-out as National Semiconductor’s industry standard LM317.
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LM1084
LM1084
LM317.
O-220
O-263
LM1085
LM1086
LM1084-ADJ
LM1084-12
circuit diagram for 48v 10a automatic battery charger
lm1085 application note
LM1084IT-3
LM1084 ADJ
48v regulator by lm317
battery charger lead 48v 10A circuit
lm317 equivalent
LM1084IS-ADJ
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Untitled
Abstract: No abstract text available
Text: 2SK2397-01MR N-channel MOS-FET FAP-II Series 800V > Features - 2,3Ω 5A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2397-01MR
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17520 transistor
Abstract: ax3217
Text: Power 1C BIC1222 Bellnix' <Summary> BIC1222 is a high efficiency POWER-IC of MCM multi chip module with synchronous rectification system chopper control, N channel MOSFET of main switch and low side MOSFET for synchronous rectification. Maximum output is 5A and the input voltage range is 8V-20V. The functions such
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BIC1222
BIC1222
V-20V.
DC8-20V
V-12V)
BDD20050412-030514
17520 transistor
ax3217
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capacitor electrolyte
Abstract: 17520 transistor
Text: Power 1C BIC1222 Bellnix <Summary> BIC1222 is a high efficiency POWER-IC of MCM multi chip module with synchronous rectification system chopper control, N channel MOSFET of main switch and low side MOSFET for synchronous rectification. Maximum output is 5A and the input voltage range is 8V-20V. The functions such
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BIC1222
BIC1222
V-20V.
BDD20050412-050704
capacitor electrolyte
17520 transistor
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Untitled
Abstract: No abstract text available
Text: blE » SUPERTEX INC • ö7 73SciS 0003253 13b « S T X VP11A Su per te x inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss' SV «» R DS ON (max) *D<ON) (min) TO-39 TO-220 DICE* -60V 2a -5A VP1106N2
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VP11A
O-220
VP1106N2
VP1106N5
VP1106ND
-100V
VP1110N2
VP1110N5
VP1110ND
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buz 90 af
Abstract: No abstract text available
Text: ÖÖD D • 88D fl23SbQS 0014034 1 ■ S I E ß 14834 D T ’' ?>Ct '~ ! 3 BUZ 88 A SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel = 800 V Draln-source voltage KlS » 5A Continuous drain current 1D Drain-source on-resistance ^DS on = 1,5 £2
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fl23SbQS
C67078-A1609-A3
buz 90 af
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Untitled
Abstract: No abstract text available
Text: ÔÛD ö 235 b D s D ooma^M a « s i e g SIEMENS AKTIENGESELLSCHAF BUZ 206 Main ratings N-Channel = 400 V Drain-source voltage I^DS Continuous drain current a 5A h Draln-source on-resistance R,O S o n = 1,5 Q. Description Case FREDFET with fast-recovery reverse diode, N-channel, enhancement mode
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C67078-A1403-A2
fl235bOS
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2526-01 N-channel MOS-FET FAP-II Series 900V > Features - 3,6Q 60W 5A > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2526-01
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