GH170
Abstract: gh17
Text: SKiiP 192 GH170 - 272 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 4000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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GH170
IGBT11)
Rthjs10)
gh17
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diode number
Abstract: H07V-U terminal of diode
Text: Product catalogue | Functional Electronics | Interface elements | Diode Array | with open diode connections General ordering data Order No. Part designation Version EAN Qty. 8022901001 RSD 10 LP5/10/90 5.08 Diode gate, PCB terminal LP 5.08, Number of signals: 10
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H07V-U)
LP5/10/90
EC001419
diode number
H07V-U
terminal of diode
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A 3150 igbt driver
Abstract: IR E78996 IRF E78996 ECONO2-6PACK IGBT module ir igbt 1200V 40A igbt qualification circuit E78996 IR GB25XF120K
Text: PD - 94569 GB25XF120K IGBT 6PACK MODULE Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient
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GB25XF120K
A 3150 igbt driver
IR E78996
IRF E78996
ECONO2-6PACK IGBT module
ir igbt 1200V 40A
igbt qualification circuit
E78996 IR
GB25XF120K
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Untitled
Abstract: No abstract text available
Text: SMD Zener Diode CZRSC55C2V0-G Thru CZRSC55C36-G Voltage: 2.0 to 36 Volts Power: 0.5 Watts RoHS Device Features 0805 - This diode is also available in other case styles including the 1206 case with the type designation. - Sillcon Planar Power Zener Diode. 0.086 2.20
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CZRSC55C2V0-G
CZRSC55C36-G
QW-BZ023
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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GH170
Abstract: SIN DIODE 150A diode
Text: SKiiP 192 GH170 - 272 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT
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GH170
SIN DIODE
150A diode
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5323EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5323EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.
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NX5323EH
NX5323EH
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skiip 23 ac 128 t 48
Abstract: skiip 23 ac 128 t 47 skiip 25 ac 128 t 47 skiip 23 ac 128 t 2 skiip 23 ac 128 t 3
Text: SKiiP 192 GH 170 - 272 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C
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\marketin\datenbl\skiippac\sensor\d192gh
skiip 23 ac 128 t 48
skiip 23 ac 128 t 47
skiip 25 ac 128 t 47
skiip 23 ac 128 t 2
skiip 23 ac 128 t 3
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2N3904 158 transistor
Abstract: 2n3904 transistor 2N3904, transistor r2m2 thermal diode T23B 2N3904 158 amd Sempron PIN LAYOUT voltage ground
Text: LM95231 LM95231 Precision Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology Literature Number: SNIS139D LM95231 Precision Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm™ Technology General Description
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LM95231
LM95231
SNIS139D
2N3904 158 transistor
2n3904 transistor
2N3904, transistor
r2m2
thermal diode
T23B
2N3904 158
amd Sempron PIN LAYOUT voltage ground
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Untitled
Abstract: No abstract text available
Text: Part: SMBJ220CA Series: SMBJ Series - 600W Surface Mount TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Surface Mount Mount Method Mount Surface Mount Maximum Reverse Leakage Current IR 5.00 PROTECTS AGAINST: Maximum Temperature
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SMBJ220CA
10x1000
10x1000Â
10x160Â
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Untitled
Abstract: No abstract text available
Text: Part: SMBJ220A Series: SMBJ Series - 600W Surface Mount TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Surface Mount Mount Method Mount Surface Mount Maximum Reverse Leakage Current IR 5.00 PROTECTS AGAINST: Maximum Temperature
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SMBJ220A
10x1000
10x1000Â
10x160Â
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WLD3343
Abstract: WTW002 1k trimpot vertical LM4040 WHS302 WHS320 WHY5640
Text: WLD3343 General Purpose Driver for Laser Diodes Pb FEATURES: GENERAL DESCRIPTION: The WLD3343 is an easy-to-use analog circuit for space contstrained, high-power laser diode applications. The WLD3343 maintains precision laser diode current constant current mode
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WLD3343
WLD3343
4-Aug-08
31-Aug-09
WLD3343-00400-A
WTW002
1k trimpot vertical
LM4040
WHS302
WHS320
WHY5640
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national semiconductor lm334
Abstract: LM334 MS-026 SML2108 K2053 fig05
Text: SUMMIT SML2108 MICROELECTRONICS, Inc. Dual Loop Laser Diode Adaptive Power Controller with Look Up Table FEATURES PRELIMINARY DESCRIPTION ! Dual Closed-loop Control of Laser Diode Mean Power and Extinction Ratio The SML2108 is an adaptive power controller for laser
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SML2108
SML2108
10-Bit
national semiconductor lm334
LM334
MS-026
K2053
fig05
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Untitled
Abstract: No abstract text available
Text: LM63 www.ti.com SNAS190E – SEPTEMBER 2002 – REVISED MAY 2013 LM63 ±1°C/±3°C Accurate Remote Diode Digital Temperature Sensor with Integrated Fan Control Check for Samples: LM63 FEATURES DESCRIPTION • The LM63 is a remote diode temperature sensor with
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SNAS190E
2N3904
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Tachometer circuit 2011
Abstract: No abstract text available
Text: LM96063 www.ti.com SNIS149A – NOVEMBER 2011 – REVISED NOVEMBER 2011 LM96063 Remote Diode Digital Temperature Sensor with Integrated Fan Control Check for Samples: LM96063 FEATURES • 1 • 2 • • • • • • • Accurately senses remote diode-connected
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LM96063
SNIS149A
LM96063
MMBT3904
10-bit
11-bit
Tachometer circuit 2011
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Untitled
Abstract: No abstract text available
Text: LM63 www.ti.com SNAS190E – SEPTEMBER 2002 – REVISED MAY 2013 LM63 ±1°C/±3°C Accurate Remote Diode Digital Temperature Sensor with Integrated Fan Control Check for Samples: LM63 FEATURES DESCRIPTION • The LM63 is a remote diode temperature sensor with
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SNAS190E
2N3904,
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Untitled
Abstract: No abstract text available
Text: LM96063 www.ti.com SNIS149A – NOVEMBER 2011 – REVISED NOVEMBER 2011 LM96063 Remote Diode Digital Temperature Sensor with Integrated Fan Control Check for Samples: LM96063 FEATURES • 1 • 2 • • • • • • • Accurately senses remote diode-connected
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LM96063
SNIS149A
LM96063
MMBT3904
10-bit
11-bit
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Untitled
Abstract: No abstract text available
Text: Packaged Silicon PIN Diode Outline Drawings of Available Case Styles PIN DIODE SELECTION GUIDE M/A-COM SEMICONDUCTOR PRODUCTS OPERATION • Burlington, MA 01803 • 617 272-3000 • TWX 710-332-6789 • TELEX 94-9464
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EBF83
Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
Text: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs
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EBF83
7R05998
7R05S99
EBF83
EN50011
Scans-0017839
CD2A
battery operated cdi
2235S
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modulator circuit
Abstract: BY438 Philips diode tFR
Text: N AMER PHILIPS/ DISCR ETE bRE » • bbS3131 D0Eb471 2HT ■ APX BY438 A PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as efficiency diode in transistorized horizontal deflection circuits of television receivers. The
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bbS3131
D0Eb471
BY438
OD-64.
BY438.
modulator circuit
BY438
Philips diode tFR
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TVS Diode
Abstract: diode array S020L SO 273 tvs diode 225
Text: SECTION 2 Transient Voltage Suppressor Arrays Page Quick Reference Guide 8 Pin DIP TVS Diode Array - 4 and 6 Line DA Series: DA Series: 16 Pin DIP TVS Diode Array - 8 and 12 Line 16 Pin Hermetic DIP TVS Diode Array -1 5 Line DLZ Series: EMC Series: 16 Pin S0-16L TVS/Low Pass L/C Filter Array
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S0-16L
PLC01-6:
PLC03-6:
OT-143
OT-23
PSM712
S52B2
B02-431-81Q1
BQ2-431-228S
TVS Diode
diode array
S020L
SO 273
tvs diode 225
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification UHF variable capacitance diode DESCRIPTION BB134 QUICK REFERENCE DATA The BB134 is a silicon, double-implanted variable capacitance diode in planar technology, intended for use in UHF tuners. It has a high linearity and is
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BB134
BB134
OD323.
BB135,
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