biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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hc4-dc12v
Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
Text: HC Has built-in diode to absorb surge For use in semiconductor circuits HC RELAY WITH DIODE TYPE FOR DC FEATURES 1. The built-in diode absorbs surge voltage arising when the coil goes to the off state (for DC type). Diode characteristics; Reverse breakdown voltage: 1,000V,
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25Y-3N,
25Y-3S
25-3X,
1071-A
25-3S
25-3TA
25-M3
hc4-dc12v
HC4-DC24V
HC2-DC24V
HC2-SS-K
HC3-DC24V
HC3-DC6V-D-F
nichifu
HC4-DC24V-D
HC1-DC12V
HC2-L-DC24V-D-F
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BA792
Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
Text: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:
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BA792
MAM139
OD110)
OD110
SCDS47
117021/1100/01/pp8
BA792
top mark smd Philips
Diode smd code 805
SMD MARKING 541 DIODE
279-27
smd diode marking kda
marking code kda
smd code marking 777
smd diode marking 77
S4 SMD diode mark
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SMD MARKING 541 DIODE
Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Text: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF
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M3D178
BA792
MAM139
OD110)
OD110
SCDS47
113061/1100/01/pp8
SMD MARKING 541 DIODE
smd diode 708
BA792
Diode smd code 805
SOD110
S4 SMD diode mark
MCC SMD DIODE
SMD MARK CODE s4
BP317
diode marking code 777
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UHF/VHF
Abstract: No abstract text available
Text: 5082-2787 SCHOTTKY BARRIER DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-2787 is a Silicon Small Signal Schottky Diode Designed for UHF/VHF Mixers, and Video Detector Applications. Color Band Indicates Cathode. RF Parameters are Sample Tested. MAXIMUM RATINGS
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c 2785
Abstract: No abstract text available
Text: 5082-2785 SCHOTTKY MEDIUM BARRIER DIODE PACKAGE STYLE 860 DESCRIPTION: The ASI 5082-2785 is a Medium Barrier Schottky Diode designed for General Purpose Mixer Applications. FEATURES INCLUDE: • Small size • Low noise fugure MAXIMUM RATINGS: PDISS 125 mW @ TA = 25 °C
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str 6707
Abstract: BP317 Diode smd code 805 SMD 2211 smd schottky diode marking 72 BAT254
Text: DISCRETE SEMICONDUCTORS DATA SHEET L4 dbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic
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M3D177
BAT254
BAT254
OD110
MAM214
OD110)
SCDS48
117021/1100/01/pp8
str 6707
BP317
Diode smd code 805
SMD 2211
smd schottky diode marking 72
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semikron skiip 400 gb
Abstract: semikron skiip 33 1513gb172 semikron skiip 31 semikron skiip SKIIP APPLICATION SKIIP DRIVER skiip gb 120 PX16 SKIIP 33
Text: SKiiP 1513GB172-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1513GB172-3DL
semikron skiip 400 gb
semikron skiip 33
1513gb172
semikron skiip 31
semikron skiip
SKIIP APPLICATION
SKIIP DRIVER
skiip gb 120
PX16
SKIIP 33
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1203GB122-2DW
Abstract: semikron skiip 3
Text: SKiiP 1203GB122-2DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1203GB122-2DW
1203GB122-2DW
semikron skiip 3
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semikron skiip 3
Abstract: semikron skiip 400 gb 1513GB122-3DL PX16
Text: SKiiP 1513GB122-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1513GB122-3DL
semikron skiip 3
semikron skiip 400 gb
1513GB122-3DL
PX16
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semikron skiip 400 gb
Abstract: semikron skiip 31 1803GB172-3DW semikron thermal switch
Text: SKiiP 1803GB172-3DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1803GB172-3DW
semikron skiip 400 gb
semikron skiip 31
1803GB172-3DW
semikron thermal switch
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NX5320EH
Abstract: NX5320EH-AZ PX10160E
Text: LASER DIODE NX5320EH 1 310 nm AlGaInAs MQW-FP LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX5320EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. APPLICATION • 4 G fiber channel
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NX5320EH
NX5320EH
PL10660EJ01V0DS
NX5320EH-AZ
PX10160E
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1013GB122-2DL
Abstract: semikron skiip 1013gb122-2dl semikron skiip 400 gb semikron skiip 20 semikron skiip 3 PX16 MDC 2301
Text: SKiiP 1013GB122-2DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1013GB122-2DL
1013GB122-2DL
semikron skiip 1013gb122-2dl
semikron skiip 400 gb
semikron skiip 20
semikron skiip 3
PX16
MDC 2301
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1803GB122-3DW
Abstract: SK 69 DIODE IC-900A
Text: SKiiP 1803GB122-3DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1803GB122-3DW
1803GB122-3DW
SK 69 DIODE
IC-900A
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semikron skiip 400 gb
Abstract: SemiSel 1803GB173-3DW
Text: SKiiP 1803GB173-3DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1803GB173-3DW
semikron skiip 400 gb
SemiSel
1803GB173-3DW
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semikron skiip 342
Abstract: semikron skiip 400 gb 12960 semikron skiip 12-0-12 transformer used 24v dc supply SKIIP APPLICATION skiip gb 120 1813GB123-3DL PX16 B75 diode
Text: SKiiP 1813GB123-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1813GB123-3DL
semikron skiip 342
semikron skiip 400 gb
12960
semikron skiip
12-0-12 transformer used 24v dc supply
SKIIP APPLICATION
skiip gb 120
1813GB123-3DL
PX16
B75 diode
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semikron skiip 33
Abstract: "Humidity Sensor" Mk 33 632GB120-315CTV
Text: SKiiP 632GB120-315CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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632GB120-315CTV
semikron skiip 33
"Humidity Sensor" Mk 33
632GB120-315CTV
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PX10160E
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5320EH 1 310 nm AlGaInAs MQW-FP LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX5320EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. APPLICATION • 4 G fiber channel
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NX5320EH
NX5320EH
PX10160E
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skiip 24
Abstract: No abstract text available
Text: SKiiP 1013GB122-2DL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms
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1013GB122-2DL
1013GB122-2DL
skiip 24
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Untitled
Abstract: No abstract text available
Text: SKiiP 1013GB172-2DL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms
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1013GB172-2DL
1013GB172-2DL
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HL6312G
Abstract: 1550 laser diode infrared Laser diode 336-1027-785 Laser Diode Mounts 300-0380-780 lens for laser diode lens laser diode Aspheric Lens TO Can Optima Precision
Text: Laser Diode Mounting Kits For Ø5.6mm and Ø9mm Laser Diodes — Complete Mounting System with Collimating Lens If your work involves laser diodes, you’ll appreciate the benefits of Optima’s laser diode mounting systems. Components in the system facilitate mounting a laser diode, collimating or focusing the beam, and aligning the beam
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HL6312G
01JAN01
HL6312G
1550 laser diode
infrared Laser diode
336-1027-785
Laser Diode Mounts
300-0380-780
lens for laser diode
lens laser diode
Aspheric Lens TO Can
Optima Precision
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diode in 400
Abstract: No abstract text available
Text: IW0140A4 ULTRAFAST RECTIFIER DIODE ARRAY Pinning Electric scheme 1 8 2 7 3 6 4 5 1 8 2 7 3 6 4 5 Ultrafast diode array designed for use in systems of protection of telephone lines from overvoltage. The device is available in DIP-8 case MAXIMUM RATINGS for every diode of assembly
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IW0140A4
diode in 400
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triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD
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1S2835
1S2836
1S2837
1S2838
1SS123
1SS220
1SS221
1SS222
1SS223
2SA811A
triac tic 236
SCR U 537
MP25 transistor
transistor su 312
GA1L32
3 pin mini mold transistor
2SJ19
FA114M
2SA1611
Z 103 TRIAC
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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