STTA206S
Abstract: SMC 4A 400v diode 400v 2A ultrafast DIODE 2A 400V TRANSISTOR 45 P3
Text: STTA206S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY
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STTA206S
STTA206S
SMC 4A 400v
diode 400v 2A ultrafast
DIODE 2A 400V
TRANSISTOR 45 P3
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DI 380 Transistor
Abstract: SOD15 transistor marking p3 STTA206S diode 400v 2A ultrafast marking t51 transistor p2 marking
Text: STTA206S TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTER DIODE
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STTA206S
DI 380 Transistor
SOD15
transistor marking p3
STTA206S
diode 400v 2A ultrafast
marking t51
transistor p2 marking
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mosfet 600v
Abstract: STTA206S DU MARKING
Text: STTA206S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS c u d SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY
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STTA206S
mosfet 600v
STTA206S
DU MARKING
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STTA206S
Abstract: diode 400v 2A ultrafast
Text: STTA206S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATION: FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN
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STTA206S
STTA206S
diode 400v 2A ultrafast
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GP20DL
Abstract: DO-204AC
Text: ZOWIE Low VF Rectifier Diode GP20DL THRU GP20ML Low VF Rectifier Diode VF < 0.90V @IF = 2A FEATURES IFSM = 100Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop
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GP20DL
GP20ML
100Amp
DO-204AC
DO-204AC
MIL-STD-750,
300uS
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DO-204AC
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode GP20DLH THRU GP20MLH Low VF Rectifier Diode VF < 0.90V @IF = 2A FEATURES IFSM = 100Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop
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GP20DLH
GP20MLH
100Amp
DO-204AC
DO-204AC
MIL-STD-750,
300uS
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DIODE T53
Abstract: transistor marking p3 SOD15 IGBT trr igbt high frequency 1200V STTA212S DI 380 Transistor TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE DIODE marking ED diode tURBOSWITCH
Text: STTA212S TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTER DIODE
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STTA212S
DIODE T53
transistor marking p3
SOD15
IGBT trr
igbt high frequency 1200V
STTA212S
DI 380 Transistor
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
DIODE marking ED
diode tURBOSWITCH
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20KDA60
Abstract: No abstract text available
Text: ｓ DIODE 20KDA60 Type : OUTLINE DRAWING 2A 600V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.38g Rating
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20KDA60
15x15mm
17C/W)
20KDA60
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STTB206S
Abstract: marking t61
Text: STTB206S TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 45ns VF (max) 1.3V A K FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION
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STTB206S
STTB206S
marking t61
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R0813
Abstract: CSD02060G csd02060 q 406 813 CSD02060A D02060
Text: CSD02060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF AVG = 2A Qc Features • • • • • • • = 7nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior
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CSD02060
600-Volt
O-263-2
O-220-2
00W-400W
R0813
CSD02060G
q 406 813
CSD02060A
D02060
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Untitled
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode GP20DLH THRU GP20MLH Low VF Rectifier Diode VF < 0.90V @IF = 2A FEATURES IFSM = 100Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop o 2.0 Ampere operation at TA=55 C with no thermal runaway
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GP20DLH
GP20MLH
100Amp
DO-204AC
DO-204AC
MIL-STD-750,
300uS
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GP20DL
Abstract: GP20GL GP20JL GP20KL GP20ML
Text: ZOWIE Low VF Rectifier Diode GP20DL THRU GP20ML Low VF Rectifier Diode VF < 0.90V @IF = 2A FEATURES IFSM = 100Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop o 2.0 Ampere operation at TA=55 C with no thermal runaway
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GP20DL
GP20ML
100Amp
DO-204AC
DO-204AC
MIL-STD-750,
300uS
GP20GL
GP20JL
GP20KL
GP20ML
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STTA206S
Abstract: diode 400v 2A ultrafast SMC 4A 400v
Text: STTA206S TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTERDIODE ULTRA-FAST AND SOFT RECOVERY
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STTA206S
STTA206S
diode 400v 2A ultrafast
SMC 4A 400v
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DG1V60
Abstract: DIODE SMD 10A 78 DIODE SMD smd diode code ja
Text: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE DG1V60 Unit : mm Weight : 0.011g（typ.） Package：G1F 600V 2A 特長 ロット記号（例） Date code 品名略号 Type No. • 小型 SMD • 耐湿性に優れ高信頼
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DG1V60
1mst10ms
DG1V60
DIODE SMD 10A
78 DIODE SMD
smd diode code ja
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STTA212S
Abstract: No abstract text available
Text: STTA212S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION ANDRECTIFICATION ULTRA-FAST AND SOFT RECOVERY
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STTA212S
STTA212S
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STTA212S
Abstract: No abstract text available
Text: STTA212S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION ANDRECTIFICATION ULTRA-FAST AND SOFT RECOVERY
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STTA212S
STTA212S
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DIODE T53
Abstract: STTA212S SWITCHING DIODE 600V 2A
Text: STTA212S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION AND RECTIFICATION
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STTA212S
DIODE T53
STTA212S
SWITCHING DIODE 600V 2A
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AN-994
Abstract: IRF530S IRG4BC10SD-L IRG4BC10SD-S IRL3103L
Text: PD - 95780 IRG4BC10SD-SPbF IRG4BC10SD-LPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4BC10SD-SPbF
IRG4BC10SD-LPbF
O-262
AN-994.
AN-994
IRF530S
IRG4BC10SD-L
IRG4BC10SD-S
IRL3103L
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Transistor Mosfet N-CH 400V 40A
Abstract: AN-994 IRG4BC10SD-L IRG4BC10SD-S
Text: PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4BC10SD-S
IRG4BC10SD-L
O-262
AN-994.
Transistor Mosfet N-CH 400V 40A
AN-994
IRG4BC10SD-L
IRG4BC10SD-S
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diode mur
Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
Text: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.
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GE1001,
GE1002,
GE1003,
GE1004
GE1101,
GE1102,
GE1103,
GE1104
GE1301,
GE1302,
diode mur
600V 25A Ultrafast Diode
MUR850 diode
diode 400V 4A
igbt 1000v 80a
diode 400v 2A ultrafast
igbt 200v 30a
600v 30a IGBT
30A, 600v DIODE
igbt 200V 4A
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Untitled
Abstract: No abstract text available
Text: STTA206S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2A V rrm 600V trr (typ) V f (max) 20ns 1.5V FEATURES AND BENEFITS • SPECIFIC TO "FREEWHEEL MODE' OPERATION: FREEWHEEL OR BOOSTER DIODE ■ ULTRA-FAST AND SOFT RECOVERY
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STTA206S
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diode sg 42
Abstract: ed1b
Text: rz7 SGS-THOMSON ^ 7 # MûœËŒOT «® STTA206 S TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2A V rrm 600V (typ) 20ns (max) 1.5V tr r Vf PRELIMINARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTER DIODE
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STTA206
diode sg 42
ed1b
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transistor marking 2A H
Abstract: STTA212S
Text: STTA212S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If av 2A V rrm 1200V (typ) 65ns (max) 1.5V trr Vf FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPEFIATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION AND RECTIFICATION
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STTA212S
transistor marking 2A H
STTA212S
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PDF
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Untitled
Abstract: No abstract text available
Text: rz7 SGS-THOMSON ^7# MûœËŒOT «® STTB206S TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2A V rrm 600V trr (typ) 45ns Vf (max) PRELIMINARY DATASHEET 1.3V FEATURES AND BENEFITS • SPECIFIC TO ThE FOLLOWING OPEFtATIONS:
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STTB206S
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