BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
|
Original
|
BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 7.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
|
Original
|
ZXMN2A02X8
ZXMN2A02X8TA
ZXMN2A02X8TC
|
PDF
|
2A02
Abstract: ZXMN2A02X8 ZXMN2A02X8TA ZXMN2A02X8TC diode SM 78A
Text: ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 7.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
|
Original
|
ZXMN2A02X8
ZXMN2A02X8TA
ZXMN2A02X8Tlephone:
2A02
ZXMN2A02X8
ZXMN2A02X8TA
ZXMN2A02X8TC
diode SM 78A
|
PDF
|
diode ed 49
Abstract: DMN3025LSS
Text: Not Recommended for New Design Use DMN3025LSS ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET ID = 7.8A N O T FO R R EC N O EW M M D EN ES D IG ED N SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
|
Original
|
DMN3025LSS
ZXMN2A02X8
diode ed 49
DMN3025LSS
|
PDF
|
2A02
Abstract: ZXMN2A02X8 ZXMN2A02X8TA ZXMN2A02X8TC
Text: ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.02⍀ D=7.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power
|
Original
|
ZXMN2A02X8
ZXMN2A02X8TA
ZXMN2A02X8TC
2A02
ZXMN2A02X8
ZXMN2A02X8TA
ZXMN2A02X8TC
|
PDF
|
diode 2a02
Abstract: No abstract text available
Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
|
Original
|
ZXMN2A02N8
ZXMN2A02N8TA
ZXMN2A02N8TC
diode 2a02
|
PDF
|
2A02
Abstract: ZXMN2A02N8 ZXMN2A02N8TA ZXMN2A02N8TC sm50A
Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
|
Original
|
ZXMN2A02N8
ZXMN2A02N8TA
ZXMN2A02N8TC
2A0200
2A02
ZXMN2A02N8
ZXMN2A02N8TA
ZXMN2A02N8TC
sm50A
|
PDF
|
ZXMN2A02N8TA
Abstract: ZXMN2A02N8TC 2A02 ZXMN2A02N8 115AV
Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
|
Original
|
ZXMN2A02N8
ZXMN2A02N8TA
ZXMN2A02N8TC
2A02ew
ZXMN2A02N8TA
ZXMN2A02N8TC
2A02
ZXMN2A02N8
115AV
|
PDF
|
melf diode marking
Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
Text: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish
|
Original
|
5KE100A-B
5KE100A-T
5KE100CA-B
5KE100CA-T
5KE10A-A
5KE10A-B
5KE10A-T
5KE10CA-B
5KE10CA-T
5KE110A-B
melf diode marking
A180-WLA
RS503s
SBR130S3
Schottky melf
hall sensor 35l
5KE91A-B
PR1005G-A
GBPC3504L
STPR2020CT
|
PDF
|
ZXMN2A02N8TA
Abstract: ZXMN2A02N8TC 2A02 TS16949 ZXMN2A02N8
Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
|
Original
|
ZXMN2A02N8
ZXMN2A02N8TA
ZXMN2A02N8TC
D-81541
ZXMN2A02N8TA
ZXMN2A02N8TC
2A02
TS16949
ZXMN2A02N8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
|
Original
|
ZXMN2A02N8
ZXMN2A02N8TA
ZXMN2A02N8TC
D-81541
|
PDF
|
BUT11APX equivalent
Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
|
Original
|
BT148-600R
BT148-400R
BUT11APX equivalent
BU4508DX equivalent
2SD1876
2Sd1651 equivalent
BYS21-45
smd zener diode color band
2SD1878 data sheet
2SC5296 equivalent
BT151-600R
BUK98150 spice
|
PDF
|
BU4508DX equivalent
Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
|
Original
|
BT148-600R
BT148-400R
BU4508DX equivalent
BUT11APX equivalent
S0806MH
P0201MA TO92
BT136 application note
diode cross reference BYW96E
ct 2A05 diode
BU2508Dx equivalent
ST2001HI equivalent
BU2508DF equivalent
|
PDF
|
BA-20 diode
Abstract: MB2861 MB2861BB 10nbx
Text: Philips Semiconductors Advanced BiCMOS Products Product specification Data 10-bit bus transceiver 3-State MB2861 • Live insertion/extraction permitted • Latch-up protection exceeds 500mA per buffering for wide data/address paths or buses carrying parity
|
Original
|
10-bit
MB2861
500mA
MB2861
64mA/-32m%
500ns
BA-20 diode
MB2861BB
10nbx
|
PDF
|
|
n539
Abstract: 6A10 DIODE diode 2a05 FRI57 diode 6A10 Diode IN5398 N4003 diode k5 10-16 diode 1n5392 N5398
Text: DIODE RECTIFIERS GENERAL PURPOSE /1A • 1.SA • 2A • 3A • 8A MAXIMUN Peak Reverse Voltage PRV Max Avg Rect Current @ Half-Wave Res Load 60Hz L @Ta 1N4001 1N4002 ÌN4003 1N4004 1N4005 1N400Ó 1N4007 50 100 200 400 600 800 1000 10 1.0 1.0 Ì0 1.0 1.0
|
OCR Scan
|
1N4001
1N4002
N4003
1N4004
1N4005
1N400Ó
1N4007
1N5392
1N5393
1N5394
n539
6A10 DIODE
diode 2a05
FRI57
diode 6A10
Diode IN5398
diode k5 10-16
diode 1n5392
N5398
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Signetics Advanced BiCMOS Products Objective specification Quad octal transceivers with direction pins 3-State FEATURES M B4245 QUICK REFERENCE DATA • 32-bit bidirectional bus interface • Multiple Vcc and G N D pins minimize switching noise • 3-State buffers
|
OCR Scan
|
B4245
32-bit
64mA/-32mA
500mA
|
PDF
|
74LVT
Abstract: 74LVT240 74LVT240D 74LVT240DB 74LVT240PW LVT240
Text: N A P C / P H I L I P S SEfllCOND L3E P • bb5 3 T5 M 0064117 Philips Semiconductors Low Voltage Products TfiT « S I C 3 Objective specification 3.3V ABT Octal inverting buffer 3-State FEATURES • • • • • Octal bus interface 3-State buffers Output capability: +64mA/-32mA
|
OCR Scan
|
74LVT240
64mA/-32mA
500mA
74LVT
510MHz
500ns
74LVT240
74LVT240D
74LVT240DB
74LVT240PW
LVT240
|
PDF
|
MB2861
Abstract: MB2861BB
Text: b5E J> NAPC/r^ILIPS SEIHCOND • bbSBTZM OOfibblb 43E « S I C 3 Philips Semiconductors Advanced BiCMOS Products Product specification Data 1Q-bit bus transceiver 3-State MB2861 QUICK REFERENCE DATA DESCRIPTION The MB2861 bus transceiver provides high performance bus interface buffering for wide
|
OCR Scan
|
10-bit
MB2861
MB2861
TheMB2861
64mA/-32mA
500ns
MB2861BB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification 74ABT16240 74ABTH16240 16-bit inverting buffer/driver 3-State FEATURES • Latch-up protection exceeds 500mA perJEDEC Std 17 • 16-bit bus interface • ESD protection exceeds 2000V per MIL STD 883 Method 3015
|
OCR Scan
|
74ABT16240
74ABTH16240
16-bit
500mA
64mA/-32mA
74ABT16240
|
PDF
|
74ABT16245
Abstract: MB2245DL
Text: PHILIPS INTERNATIONAL LSE D • 711Dfi2b Q057fl37 DTD ■ PHIN Philip« Semiconductors Advanced BICMOS Products Preliminary specification Dual octal transceivers with direction pins 3-State QUICK REFERENCE DATA FEATURES • 16-bit bidirectional bus interface
|
OCR Scan
|
711DfiSb
DDS7fl37
ib245
16-bit
A/-32mA
500mA
74ABT16245
500ns
MB2245DL
|
PDF
|
DC DC INPUT 3-6V OUTPUT 6V
Abstract: No abstract text available
Text: Philips Semiconductors Product specification 3.3V 16-bit inverting buffer/driver 3-State 74LVT16240A FEATURES DESCRIPTION • 16-bit bus interface The 74LVT16240A is a high-performance BiCMOS product designed for Vcc operation at 3.3V. • 3-State buffers
|
OCR Scan
|
16-bit
74LVT16240A
64mA/-32mA
500mA
74LVT16240A
74LVT16
10MHz
500ns
DC DC INPUT 3-6V OUTPUT 6V
|
PDF
|
74LVT16240A
Abstract: 74LVT16240ADGG 74LVT16240ADL LVT16240A
Text: Philips Semiconductors Low Voltage Products Preliminary specification 3.3V A B T 16-Bit Inverting buffers/drivers 3-State FEATURES • Live insertion/extraction permitted DESCRIPTION • Power-up 3-State The LVT16240A is a high-performance BiCMOS product designed for V c c operation
|
OCR Scan
|
16-Bit
74LVT16240A
64mA/-32mA
500mA
LVT16240A
74LVT16
210MHz
500ns
74LVT16240A
74LVT16240ADGG
74LVT16240ADL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P hilips Sem iconductors Product specification 16-bit buffer/driver 3-State v ' 74ABT16241A 74ABTH16241A FEATURES DESCRIPTION • 16-bit bus interface The 74ABT16241A is a high-performance BiCMOS device which combines low static and dynamic power dissipation with high speed
|
OCR Scan
|
16-bit
74ABT16241A
74ABTH16241A
64mA/-32mA
74ABTH16241A
500mA
74ABT6-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification 16-bit inverting buffer/driver 3-State 74ABTH16240A FEATURES DESCRIPTION • 16-bit bus interface The 74ABT16240A is a high-performance BiCMOS device which combines low static and dynamic power dissipation with high speed
|
OCR Scan
|
16-bit
74ABTH16240A
64mA/-32mA
74ABTH16240A
500mA
74ABT16240A
74ABT16
500ns
|
PDF
|